JP2729266B2 - Heat treatment equipment - Google Patents
Heat treatment equipmentInfo
- Publication number
- JP2729266B2 JP2729266B2 JP63278669A JP27866988A JP2729266B2 JP 2729266 B2 JP2729266 B2 JP 2729266B2 JP 63278669 A JP63278669 A JP 63278669A JP 27866988 A JP27866988 A JP 27866988A JP 2729266 B2 JP2729266 B2 JP 2729266B2
- Authority
- JP
- Japan
- Prior art keywords
- processing
- heat treatment
- mode
- treatment apparatus
- manual operation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、熱処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a heat treatment apparatus.
（従来の技術） 近年、半導体デバイスの製造工程における熱拡散工程
や成膜工程で用いられる熱処理装置として、省スペース
化、省エネルギー化、半導体ウエハ等の被処理物の大型
化および自動化への対応が容易特にバッチ処理において
ウエハボートの搬入搬出を反応容器内壁に非接触で実行
が容易であること等の理由から縦型熱処理装置が採用さ
れている。(Prior art) In recent years, as a heat treatment apparatus used in a heat diffusion process and a film forming process in a semiconductor device manufacturing process, space saving, energy saving, and support for larger and larger objects to be processed such as semiconductor wafers have been realized. A vertical heat treatment apparatus is employed because it is easy to carry in and out a wafer boat without contact with the inner wall of a reaction vessel, particularly in batch processing.
この縦型熱処理装置は、石英等からなる円筒状の反応
管およびこの周囲を囲繞する如く設けられたヒータ機
構、均熱管、断熱材等から構成された反応炉本体がほぼ
垂直に配設されており、この反応管内に多数の半導体ウ
エハを所定の間隔で棚積み収容した石英等からなるウエ
ハボートが配設されている。このウエハボートは反応管
下部に挿入された円筒状の保温筒上に搭載されており、
上下動可能とされた搬送機構により、この保温筒と一体
となってウエハボートが反応管内下方からロード・アン
ロードされるように構成されている。In this vertical heat treatment apparatus, a cylindrical reaction tube made of quartz or the like, and a heater mechanism provided so as to surround the periphery thereof, a heat equalizing tube, a reaction furnace main body constituted of a heat insulating material, and the like are arranged substantially vertically. Further, a wafer boat made of quartz or the like in which a large number of semiconductor wafers are stacked and stored at predetermined intervals is provided in the reaction tube. This wafer boat is mounted on a cylindrical heat retaining tube inserted in the lower part of the reaction tube,
The wafer boat is configured to be loaded and unloaded from below in the reaction tube integrally with the heat retaining tube by a vertically movable transfer mechanism.
このような縦型熱処理装置では、予め所定の作業手順
情報例えば成膜プログラム等を装置CPUの記憶機構に記
憶させておき、この記憶した作業手順情報に基づいて所
定の成膜処理を自動的に行うように構成されている（以
下、この自動処理動作をオートモードと呼ぶ）。In such a vertical heat treatment apparatus, predetermined work procedure information such as a film formation program is stored in advance in a storage mechanism of the apparatus CPU, and a predetermined film formation process is automatically performed based on the stored work procedure information. (Hereinafter, this automatic processing operation is referred to as an auto mode).
（発明が解決しようとする課題） ところで、近年の被処理物例えば半導体ウエハ等では
多品種少量生産化が進んでいるため、極少量生産や割込
み生産等のような特殊な生産を行う場合が生じる。この
ような場合に全自動処理を行おうとすると、処理内容に
応じて新規の処理プログラムを作成しなければならず、
作業が繁雑化し、生産効率の低下を招くという問題があ
った。(Problems to be Solved by the Invention) By the way, in recent years, since various kinds of small-quantity production of an object to be processed, such as a semiconductor wafer, are advanced, a special production such as an extremely small-quantity production or an interruption production occurs. . In such a case, if a full automatic process is to be performed, a new processing program must be created in accordance with the content of the process.
There has been a problem that work is complicated and production efficiency is reduced.
また、作業員がマニュアル操作により装置を動作させ
て処理することも考えられるが、一般に成膜作業では、
温度、処理ガス流量、真空度等の処理条件の制御を高精
度で行う必要があることから、作業員が完全なマニュア
ル操作により所定の成膜を行うことは困難であった。In addition, it is conceivable that a worker operates the apparatus by a manual operation to perform the process.
Since it is necessary to control processing conditions such as temperature, processing gas flow rate, and degree of vacuum with high accuracy, it has been difficult for an operator to perform predetermined film formation by completely manual operation.
本発明は、かかる従来の事情に対処してなされたもの
で、マニュアル操作による処理が容易に行うことがで
き、種々の製造工程への対応が容易にでき、生産性の向
上が図れる熱処理装置を提供することを目的とするもの
である。The present invention has been made in view of such conventional circumstances, and a heat treatment apparatus capable of easily performing processing by manual operation, easily coping with various manufacturing processes, and improving productivity. It is intended to provide.
［発明の構成］ （課題を解決するための手段） 本発明の熱処理装置は、被処理物を収容した反応炉本
体と、この反応炉本体内に所定の処理ガスを導入して前
記被処理物に所定の熱処理を施す処理制御系を備えた熱
処理装置において、 各制御弁及びガス流量調整機構の動作状態を表示する
ようことにより前記処理ガスのガス流通系における処理
ガス流通状態を表示するガス流通状態表示機構と、この
ガス流通状態表示機構の表示内容に基づきながら前記処
理制御系を手動操作して前記被処理物を処理するための
手動処理機構とを備えたことを特徴とする。[Constitution of the Invention] (Means for Solving the Problems) A heat treatment apparatus of the present invention includes a reactor main body containing an object to be processed, and a predetermined processing gas introduced into the reactor main body to supply the object to be processed. In a heat treatment apparatus having a processing control system for performing a predetermined heat treatment, a gas flow displaying a processing gas flow state in the gas flow system of the processing gas by displaying an operation state of each control valve and a gas flow rate adjusting mechanism. A state display mechanism and a manual processing mechanism for processing the object by manually operating the processing control system based on the display contents of the gas flow state display mechanism.
請求項２の発明は、請求項１記載の熱処理装置におい
て、 前記手動処理機構を用いた手動操作による処理の情報
を記憶し、当該手動操作による処理と同様な処理を自動
的に行う手段を備えたことを特徴とする。The invention according to claim 2 is the heat treatment apparatus according to claim 1, further comprising: a unit configured to store information on a process performed by a manual operation using the manual processing mechanism and automatically perform a process similar to the process performed by the manual operation. It is characterized by having.
また、請求項３の熱処理装置は、被処理物を収容した
反応炉本体と、この反応炉本体内に所定の処理ガスを導
入して前記被処理物に所定の熱処理を施す処理制御系を
備えた熱処理装置において、 前記処理制御系は、予め記憶部に記憶されたプログラ
ムに従って自動的に処理を行う第１のモードと、手動操
作によって処理を行う第２のモードと、前記第１のモー
ドに必要なプログラムを作成して前記記憶部に記憶させ
る第３のモードとを選択可能に構成され、前記第２のモ
ードにおける手動操作による処理の情報を記憶し、当該
手動操作による処理と同様な処理を自動的に行う手段を
備えたことを特徴とする。Further, the heat treatment apparatus according to claim 3 includes a reaction furnace main body accommodating the object to be processed, and a processing control system for introducing a predetermined processing gas into the reaction furnace main body and performing a predetermined heat treatment on the object to be processed. In the heat treatment apparatus, the processing control system includes a first mode in which processing is automatically performed in accordance with a program stored in a storage unit in advance, a second mode in which processing is performed by a manual operation, and the first mode. A third mode in which a necessary program is created and stored in the storage unit is configured to be selectable, and information on a process by a manual operation in the second mode is stored, and a process similar to the process by the manual operation is stored. Is automatically provided.
（作用） 本発明は、処理中例えば成膜処理中における処理ガス
流通状態を実際の装置配管と同様な形式で表示し、この
表示された情報に基づきながら手動処理機構により処理
制御系を手動操作しながら被処理物を処理するように構
成したので、マニュアル操作による成膜処理を容易に行
え、種々の製造プロセスに容易に対応でき、生産性の向
上を図ることが可能となる。(Operation) In the present invention, the processing gas flow state during the processing, for example, during the film forming processing is displayed in the same format as the actual apparatus piping, and the processing control system is manually operated by the manual processing mechanism based on the displayed information. Since the processing is performed on the object to be processed, the film forming process can be easily performed by a manual operation, and it can easily cope with various manufacturing processes, and the productivity can be improved.
（実施例） 以下、本発明を２連式縦型熱処理装置に適用した一実
施例について図を参照して説明する。(Embodiment) An embodiment in which the present invention is applied to a double vertical heat treatment apparatus will be described below with reference to the drawings.
反応炉本体は、石英等からなる円筒状の第１の反応管
1aを収容した第１の反応炉本体2aと、同様に第２の反応
管1bを収容した第２の反応炉本体2bとの並設した２連式
構造となっている。The reactor main body is a cylindrical first reaction tube made of quartz or the like.
The first reaction furnace main body 2a containing the first reaction furnace 1a and the second reaction furnace main body 2b also containing the second reaction tube 1b are arranged in a two-part structure.
各反応管1a、1bには、処理ガス例えばSiH2Cl2、HCl、
B2H6、PH3等を処理内容に合わせて各反応管1a、1b内に
所定量供給するためのガスコントローラ３と、成膜処理
時に各反応管1a、1b内を所定の真空度に保持するための
排気系コントロール４が設けられている。Each reaction tube 1a, 1b has a processing gas such as SiH 2 Cl 2 , HCl,
A gas controller 3 for supplying a predetermined amount of B 2 H 6 , PH 3 and the like into each of the reaction tubes 1a and 1b in accordance with the processing content, and a predetermined degree of vacuum in each of the reaction tubes 1a and 1b during the film forming process. An exhaust system control 4 for holding is provided.
また、各反応管1a、1bの外周には、温度コントローラ
5a、5bにより夫々制御されるヒータ機構6a、6bが周設さ
れており、これら温度コントローラ5a、5bおよびヒータ
機構6a、6bにより各反応管1a、1b内に収容された被処理
物例えば半導体ウエハ群7a、7bを所定の処理温度まで加
熱する。A temperature controller is provided on the outer periphery of each reaction tube 1a, 1b.
Heater mechanisms 6a and 6b, which are controlled by 5a and 5b, respectively, are provided around the workpieces, and the temperature controllers 5a and 5b and the heater mechanisms 6a and 6b are used to process objects accommodated in the respective reaction tubes 1a and 1b, such as semiconductor wafers. The groups 7a and 7b are heated to a predetermined processing temperature.
このような熱処理装置における処理例えばSiエピタキ
シャル成膜処理位では、まず各反応管1a、1b内を所定の
真空度とした後、ガスコントローラ３により所定の処理
ガスを反応管1a、1b内に導入する。このとき排気系コン
トローラ４により反応管1a、1b内は所定の真空度例えば
１〜10Torrとなるように排気制御される。そして温度コ
ントローラ5a、5bにより半導体ウエハ群7a、7bが所定の
処理温度例えば850〜1050℃となるようにヒータ機構6
a、6bを制御しながら処理を行う。In such a heat treatment apparatus, for example, in the Si epitaxial film forming process, the inside of each of the reaction tubes 1a and 1b is first set to a predetermined degree of vacuum, and then a predetermined processing gas is introduced into the reaction tubes 1a and 1b by the gas controller 3. . At this time, the evacuation system controller 4 controls the evacuation of the inside of the reaction tubes 1a and 1b to a predetermined degree of vacuum, for example, 1 to 10 Torr. Then, the heater mechanisms 6 are controlled by the temperature controllers 5a and 5b so that the semiconductor wafer groups 7a and 7b have a predetermined processing temperature, for example, 850 to 1050 ° C.
Processing is performed while controlling a and 6b.
上記各コントローラ３、４、5a、5bは、夫々第２図に
示すように装置CPU9により制御されており、必要に応じ
て３つの操作モード即ちマニュアル操作モード10、オー
トモード11、プログラムモード12を任意に選択できるよ
うに構成されている。Each of the controllers 3, 4, 5a, and 5b is controlled by the device CPU 9 as shown in FIG. 2, and has three operation modes, a manual operation mode 10, an auto mode 11, and a program mode 12, as necessary. It is configured to be arbitrarily selectable.
ここでオートモード11は、予め装置CPU9に記憶された
成膜プログラムに従って各コントローラ３、４、5a、5b
を制御しながら自動的に処理を行ういわゆる全自動モー
ドで、通常の製造プロセスで使用されるモードである。Here, the auto mode 11 corresponds to each of the controllers 3, 4, 5a, and 5b according to a film forming program stored in the apparatus CPU 9 in advance.
This is a so-called fully automatic mode in which processing is performed automatically while controlling the operation, and is a mode used in a normal manufacturing process.
一方、マニュアル操作モード10は、各コントローラ
３、４、5a、5bを作業員が人為的に操作するモードであ
り、作業員が必要に応じて例えば少ロット生産等の場合
にその都度各コントローラ３、４、5a、5b、９を任意に
操作して処理する場合の操作モードである。On the other hand, the manual operation mode 10 is a mode in which an operator artificially operates each of the controllers 3, 4, 5a and 5b. This is an operation mode in the case where processing is performed by arbitrarily operating 4, 5, 5a, 5b, and 9.
また、プログラムモード12は、上記オートモード11の
動作に必要な成膜プログラムを作成して、装置CPU9の記
憶部に記憶させるモードで、このプログラムモード12で
プログラム入力部13から所定の成膜プログラムを作成
し、該成膜プログラムを装置CPU9に予め記憶させておく
ことで、オートモード11で上記作成した成膜プログラム
の処理を自動的に行うことができる。The program mode 12 is a mode in which a film forming program necessary for the operation of the auto mode 11 is created and stored in the storage unit of the device CPU 9. By storing the film formation program in the apparatus CPU 9 in advance, the processing of the film formation program created above can be automatically performed in the auto mode 11.
ところで、マニュアル操作モード10により成膜作業を
行う場合には、第３図に示すような装置の処理ガス流通
系の状態を表示する処理ガス流通系表示機構21の表示情
報に基づいて作業員が各コントローラ３、４、5a、5b操
作する。By the way, in the case of performing the film forming operation in the manual operation mode 10, the worker is required to display the state of the processing gas circulation system of the apparatus as shown in FIG. Operate each controller 3, 4, 5a, 5b.
この処理ガス流通系表示機構21に表示される表示内容
は、処理ガス源例えばパージガス源22、原料ガス源23
a、23bから各反応反応管1a、1bへのガス供給配管系24〜
26、このガス供給配管系24〜26に設けられ処理ガスの流
量を制御する複数のガス流量調整機構27〜31と制御弁32
〜38、そして各反応管1a、1bから真空排気系39間に設け
られトラップ機構40〜42や各種制御弁43〜45を備えた排
気配管系46等、実際の配置配管とほぼ同様の形式で表示
されている。The display contents displayed on the processing gas flow display mechanism 21 include a processing gas source such as a purge gas source 22 and a source gas source 23.
a, 23b to gas supply piping system 24 to each reaction tube 1a, 1b
26, a plurality of gas flow adjusting mechanisms 27 to 31 provided in the gas supply piping systems 24 to 26 for controlling the flow rate of the processing gas, and a control valve 32
To 38, and an exhaust piping system 46 provided between each of the reaction tubes 1a and 1b and the vacuum exhaust system 39 and provided with a trap mechanism 40 to 42 and various control valves 43 to 45, in substantially the same form as the actual arrangement piping. Is displayed.
このような処理ガス流通系表示機構21に基づくマニュ
アル操作は、ガスコトローラ３や温度コントローラ5a、
5bにより各ガス８流量調整機構27〜31、制御弁32〜38、
43〜45等を制御しながら行うが、このときの各制御弁32
〜38、43〜45やガス流量調整機構27〜31の動作状態は、
処理ガス流通系表示機構21にリアルに表示されるので、
作業員はこの表示された情報により正確な作業状態を知
ることができ、成膜処理作業時に必要な温度、処理ガス
流量、真空度等の処理条件の高精度な制御を容易に行う
ことができる。従って、マニュアル操作により、オート
モード時の自動処理と同様な成膜処理を行うことが可能
となる。The manual operation based on the processing gas flow display mechanism 21 is performed by the gas controller 3, the temperature controller 5a,
5b, each gas 8 flow rate adjusting mechanism 27-31, control valve 32-38,
While controlling 43 to 45 etc., each control valve 32 at this time
-38, 43-45 and gas flow adjusting mechanisms 27-31
Since it is displayed realistically on the processing gas distribution system display mechanism 21,
The operator can know the accurate working state from the displayed information, and can easily perform high-precision control of processing conditions such as a temperature, a processing gas flow rate, and a degree of vacuum required during the film forming processing operation. . Therefore, it is possible to perform a film forming process similar to the automatic process in the auto mode by a manual operation.
また、上述実施例において、マニュアル操作時におけ
る成膜処理動作の情報を装置CPU9の記憶部に記憶してお
けば、次処理からは上記マニュアル操作ときの成膜作業
を自動的に行うことができる。Further, in the above-described embodiment, if the information of the film forming process operation at the time of the manual operation is stored in the storage unit of the apparatus CPU 9, the film forming operation at the time of the manual operation can be automatically performed from the next process. .
尚、処理ガス流通系表示機構21に表示される表示情報
は、実際の装置のガス流通配管系に近いものであればあ
る程、より正確なマニュアル操作が可能となることは無
論である。It goes without saying that the closer the display information displayed on the processing gas distribution system display mechanism 21 is to the gas distribution piping system of the actual apparatus, the more accurate a manual operation becomes possible.
また、上述実施例では、本発明を縦型熱処理装置に適
用した実施例について説明したが、本発明は横型熱処理
装置等の他の熱処理装置にも適用可能である。Further, in the above-described embodiment, the embodiment in which the present invention is applied to the vertical heat treatment apparatus has been described. However, the present invention can be applied to other heat treatment apparatuses such as a horizontal heat treatment apparatus.
［発明の効果］ 以上説明したように、本発明の熱処理装置によれば、
マニュアル操作による成膜処理が容易に行うことが可能
となるので、種々の製造プロセスに容易に対応すること
ができ、生産性の向上が図れる。[Effect of the Invention] As described above, according to the heat treatment apparatus of the present invention,
Since the film formation process by manual operation can be easily performed, various manufacturing processes can be easily supported, and productivity can be improved.
第１図は本発明による一実施例の縦型熱処理装置の制御
系の構成を示す図、第２図は実施例の各操作モードと各
制御系の関係を示す図、第３図は実施例の処理ガス流通
系表示機構に表示される表示情報の一例を示す図であ
る。 1a、1b……反応管、2a、2b……反応炉本体、３……ガス
コントローラ、４……排気系コントローラ、5a、5b……
温度コントローラ、7a、7b……半導体ウエハ群、９……
装置CPU、10……マニュアル操作モード、11……オート
モード、12……プログラムモード、21……処理ガス流通
系表示機構の表示内容、22……パージガス源、23a、23b
……原料ガス源、24〜26……処理ガス供給配管系、27〜
31……処理ガス流量調整機構、39……真空排気系、32〜
38、43〜45……ガス制御弁、46……排気配管系。FIG. 1 is a diagram showing the configuration of a control system of a vertical heat treatment apparatus according to one embodiment of the present invention, FIG. 2 is a diagram showing the relationship between each operation mode and each control system of the embodiment, and FIG. It is a figure which shows an example of the display information displayed on the process gas distribution system display mechanism of this. 1a, 1b ... reaction tube, 2a, 2b ... reactor body, 3 ... gas controller, 4 ... exhaust system controller, 5a, 5b ...
Temperature controller, 7a, 7b ... Semiconductor wafer group, 9 ...
Device CPU, 10: Manual operation mode, 11: Auto mode, 12: Program mode, 21: Display contents of processing gas flow display mechanism, 22: Purge gas source, 23a, 23b
…… Source gas source, 24-26 …… Processing gas supply piping system, 27-
31 ………………………………………………………………………….
38, 43-45: gas control valve, 46: exhaust piping system.
Claims (3)
応炉本体内に所定の処理ガスを導入して前記被処理物に
所定の熱処理を施す処理制御系を備えた熱処理装置にお
いて、 各制御弁及びガス流量調整機構の動作状態を表示するよ
うことにより前記処理ガスのガス流通系における処理ガ
ス流通状態を表示するガス流通状態表示機構と、このガ
ス流通状態表示機構の表示内容に基づきながら前記処理
制御系を手動操作して前記被処理物を処理するための手
動処理機構とを備えたことを特徴とする熱処理装置。1. A heat treatment apparatus comprising: a reaction furnace main body accommodating an object to be processed; and a processing control system for introducing a predetermined processing gas into the reaction furnace main body and performing a predetermined heat treatment on the object to be processed. A gas flow state display mechanism that displays the processing gas flow state in the gas flow system of the processing gas by displaying the operation state of each control valve and the gas flow rate adjustment mechanism, and a display state of the gas flow state display mechanism. And a manual processing mechanism for manually operating the processing control system to process the workpiece.
記憶し、当該手動操作による処理と同様な処理を自動的
に行う手段を備えたことを特徴とする熱処理装置。2. The heat treatment apparatus according to claim 1, further comprising means for storing information on a process by a manual operation using the manual processing mechanism and automatically performing a process similar to the process by the manual operation. A heat treatment apparatus characterized by the above-mentioned.
応炉本体内に所定の処理ガスを導入して前記被処理物に
所定の熱処理を施す処理制御系を備えた熱処理装置にお
いて、 前記処理制御系は、予め記憶部に記憶されたプログラム
に従って自動的に処理を行う第１のモードと、手動操作
によって処理を行う第２のモードと、前記第１のモード
に必要なプログラムを作成して前記記憶部に記憶させる
第３のモードとを選択可能に構成され、前記第２のモー
ドにおける手動操作による処理の情報を記憶し、当該手
動操作による処理と同様な処理を自動的に行う手段を備
えたことを特徴とする熱処理装置。3. A heat treatment apparatus comprising: a reaction furnace main body containing an object to be processed; and a processing control system for introducing a predetermined processing gas into the reaction furnace main body and performing a predetermined heat treatment on the object to be processed. The processing control system creates a first mode for automatically performing processing according to a program stored in a storage unit in advance, a second mode for performing processing by manual operation, and a program required for the first mode. And a third mode to be stored in the storage unit is configured to be selectable, stores information on a process by a manual operation in the second mode, and automatically performs a process similar to the process by the manual operation. A heat treatment apparatus comprising means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63278669A JP2729266B2 (en) | 1988-11-04 | 1988-11-04 | Heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63278669A JP2729266B2 (en) | 1988-11-04 | 1988-11-04 | Heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02125421A JPH02125421A (en) | 1990-05-14 |
| JP2729266B2 true JP2729266B2 (en) | 1998-03-18 |
Family
ID=17600511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63278669A Expired - Lifetime JP2729266B2 (en) | 1988-11-04 | 1988-11-04 | Heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2729266B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3391423B2 (en) * | 1994-09-30 | 2003-03-31 | 本田技研工業株式会社 | Attachment structure of the tip of the pipe for leaking compressed fuel gas from automobiles |
| JPH1036189A (en) * | 1996-07-19 | 1998-02-10 | Sony Corp | Vapor growth apparatus |
| US7001640B2 (en) | 2000-05-31 | 2006-02-21 | Canon Kabushiki Kaisha | Apparatus and method for forming deposited film |
| JP4794031B2 (en) * | 2000-07-12 | 2011-10-12 | 株式会社日立国際電気 | Semiconductor manufacturing apparatus, display method of semiconductor manufacturing apparatus, and manufacturing method of semiconductor device |
| JP2002350925A (en) * | 2001-05-30 | 2002-12-04 | Fuji Photo Film Co Ltd | Diaphragm switching device for camera |
| JP2005216911A (en) * | 2004-01-27 | 2005-08-11 | Komatsu Electronic Metals Co Ltd | Exhaust gas treatment system of epitaxial growth device |
| DK3206509T3 (en) | 2014-10-13 | 2020-06-15 | The State Of Isreal Ministry Of Agriculture & Rural Development Agricultural Res Organization Aro | PROCEDURE AND SYSTEM FOR TREATING A PRODUCT |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5176976A (en) * | 1974-12-27 | 1976-07-03 | Tokyo Shibaura Electric Co | KISOHANNO SOCHI |
| JPS6312155U (en) * | 1986-07-10 | 1988-01-26 | ||
| JPS63168703A (en) * | 1987-01-07 | 1988-07-12 | Yokogawa Electric Corp | Semiconductor diffusion furnace controller |
| JPS63244621A (en) * | 1987-03-30 | 1988-10-12 | Mitsubishi Electric Corp | Diffusion furnace control system |
-
1988
- 1988-11-04 JP JP63278669A patent/JP2729266B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02125421A (en) | 1990-05-14 |
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