JP4880408B2 - Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, main controller, and program - Google Patents

Description

  The present invention relates to a substrate processing apparatus. For example, in a method of manufacturing a semiconductor integrated circuit device (hereinafter referred to as an IC), an insulating film, a metal film, and a semiconductor film are formed on a semiconductor wafer (hereinafter referred to as a wafer) in which an IC is formed. The present invention relates to a device that is effective when used in a CVD device, an oxide film forming device, a diffusion device, an annealing device, or the like.

  In general, a batch-type vertical hot wall heat treatment apparatus (furnace, hereinafter referred to as a heat treatment apparatus) is used to perform heat treatment such as annealing, oxide film formation, diffusion and film formation on a wafer in an IC manufacturing method. Widely used.

  As a conventional heat treatment apparatus of this type, two boats for carrying a plurality of wafers into and out of a processing chamber are provided, and one boat (first boat) holding a wafer group is being processed in the processing chamber. In addition, there is one in which productivity is improved by transferring a new wafer to the other boat (second boat) by a wafer transfer device. For example, see Patent Document 1.

JP 2001-338889 A

However, in a heat treatment apparatus having two boats, if a wafer is transferred to the second boat immediately after the first boat is loaded into the processing chamber (boat loading), the wafer is transferred to the second boat. Since the atmosphere generated by the loading operation is sucked into the processing chamber, an oxide film (hereinafter referred to as a natural oxide film) that is not intended for control is formed on the surface of the wafer by oxygen or moisture in the atmosphere. There is a point.
This natural oxide film affects the variation in the film thickness processed on the wafer and increases the contact resistance. Therefore, the high integration, quality (accuracy, life, etc.) and performance (performance, etc.) of ICs manufactured by the wafer ( Adversely affects computing speed and reliability).

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing capable of preventing air from entering a processing chamber when a wafer is transferred to another boat immediately after a boat is loaded into the processing chamber (boat loading). To provide an apparatus.

Typical means for solving the above-described problems are as follows.
(1) Two or more boats for carrying a plurality of substrates into and out of the processing chamber are provided, and while one boat holding the plurality of substrates and the processing chamber are sealed, other boats In a substrate processing apparatus for transferring a new substrate by a substrate transfer apparatus,
After the one boat is carried into the processing chamber, when the space formed between the sealing members that are laid on the lid that supports the boat and seals the processing chamber reaches a predetermined pressure, the other boat 2. A substrate processing apparatus, wherein an operation of transferring the plurality of substrates by the substrate transfer device is started.
(2) Two or more boats for carrying a plurality of substrates into and out of the processing chamber are provided, and one boat holding the plurality of substrates and the processing chamber are sealed while another boat is A substrate processing method for processing a substrate using a substrate processing apparatus for transferring a new substrate by a substrate transfer apparatus,
After the one boat is carried into the processing chamber, when the space formed between the sealing members that are laid on the lid that supports the boat and seals the processing chamber reaches a predetermined pressure, the other boat And starting the operation of transferring the plurality of substrates by the substrate transfer device.
(3) Two or more boats that carry a plurality of substrates into and out of the processing chamber are provided, and one boat holding the plurality of substrates and the processing chamber are sealed while another boat is A method of manufacturing a semiconductor device including a substrate processing step of processing a substrate using a substrate processing apparatus that transfers a new substrate by a substrate transfer apparatus,
In the substrate processing step, after the one boat is carried into the processing chamber, a space formed between seal members that are laid on a lid that supports the boat and seals the processing chamber reaches a predetermined pressure. Then, a semiconductor device manufacturing method, wherein an operation of transferring the plurality of substrates to the other boat by the substrate transfer device is started.

  According to the present invention, for example, since a seal between the second boat carried into the processing chamber and the processing chamber can be secured during the standby of the first boat, the entry of air into the processing chamber is prevented. can do.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  In the present embodiment, the substrate processing apparatus according to the present invention is configured as a batch type vertical hot wall diffusion CVD apparatus (hereinafter referred to as a CVD apparatus) shown in FIG. It is used to perform annealing treatment, oxide film formation treatment, diffusion treatment, film formation treatment, and the like.

As shown in FIG. 1, a CVD apparatus 1 according to this embodiment includes a housing 2 formed in a rectangular parallelepiped box shape in plan view.
A clean unit 3 is installed in the rear part of the left side wall of the housing 2 (the left and right front and rear are based on FIG. 1). The clean unit 3 supplies clean air to the inside of the housing 2. Yes.
A heat treatment stage 4 is set at substantially the center of the rear portion inside the housing 2, and a standby stage (hereinafter referred to as a standby stage) in which an empty boat 50 is temporarily placed in front of and behind the left side of the heat treatment stage 4. ) 5 and a stage (hereinafter referred to as a cooling stage) 6 for temporarily placing and cooling the processed boat 50 is set.
A wafer loading stage 7 is set in the approximate center of the front part inside the housing 2, and a pod stage 8 is set in front of it. A notch aligner 9 is installed on the left side of the wafer loading stage 7.
Hereinafter, the configuration of each stage will be described.

On the pod stage 8, FOUPs (front opning unified pods, hereinafter referred to as pods) 10 as carriers (storage containers) for carrying the wafers W are placed one by one.
The pod 10 is formed in a substantially cubic box shape with one surface opened, and a door 10a is detachably attached to the opening.
When the pod 10 is used as a carrier for the wafer W, the wafer W is transported in a sealed state. Therefore, even if particles or the like exist in the surrounding atmosphere, the cleanliness of the wafer W is Can be maintained.
Therefore, since it is not necessary to set the cleanliness in the clean room where the CVD apparatus is installed, the cost required for the clean room can be reduced.
Therefore, in the CVD apparatus according to the present embodiment, pod 10 is used as a carrier for wafer W.
The pod stage 8 is provided with a door opening / closing device (not shown) for opening and closing the door 10a of the pod 10.

As shown in FIGS. 1 to 4, a wafer transfer device 11 configured by a SCARA robot is installed on the wafer loading stage 7. The wafer transfer device 11 converts the wafer W into a pod stage 8. It is configured to transfer between the standby stage 5 and transfer between the pod 10 and a boat 50 described later.
As shown in FIGS. 1 to 4, the wafer transfer device 11 is moved up and down by a wafer transfer device elevator 12 constituted by a feed screw mechanism.

As shown in FIG. 1, the clean unit 3 that supplies clean air 13 into the housing 2 is configured to blow the clean air 13 toward the standby stage 5 and the cooling stage 6.
On the other hand, as shown in FIG. 1, an exhaust fan 14 is installed at the rear right corner inside the housing 2, and the exhaust fan 14 was blown out from the outlet of the clean unit 3. Clean air 13 is sucked and discharged outside the housing 2.

As shown in FIG. 1, a boat transfer device 15 is installed between the standby stage 5 and the cooling stage 6 to transfer the boat 50 between the heat treatment stage 4, the standby stage 5, and the cooling stage 6. ing.
The boat transfer device 15 is configured by a SCARA robot, and includes a pair of first arm 16 and second arm 17 that reciprocally rotate about 90 degrees in a horizontal plane.
Both the first arm 16 and the second arm 17 are formed in an arc shape, and support the entire boat 50 vertically.

As shown in FIG. 1, the standby stage 5 is provided with a standby base 18 that supports the boat vertically, and the first arm 16 has a seal cap 40 that is described later on the boat and the thermal treatment stage 4. It is comprised so that it may transfer between.
A cooling table 19 is installed on the cooling stage 6, and the second arm 17 is configured to transfer the boat between the cooling table 19 and the seal cap 40 of the heat treatment stage 4.

As shown in FIGS. 5 and 6, a processing furnace 21 is installed above the heat treatment stage 4 via a heater base 20 as a support plate.
The processing furnace 21 has a heater 22 as a heating mechanism. The heater 22 has a cylindrical shape and is vertically installed by being supported by a heater base 20 as a support plate.

A process tube 23 as a reaction tube is disposed concentrically with the heater 22 inside the heater 22. The process tube 23 includes an outer tube 24 as an external reaction tube and an inner tube 25 as an internal reaction tube provided on the inner side.
The outer tube 24 is made of a heat-resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), and has an inner diameter larger than the outer diameter of the inner tube 25 and is formed in a cylindrical shape with the upper end closed and the lower end opened. And provided concentrically with the inner tube 25.
The inner tube 25 is made of a heat-resistant material such as quartz or silicon carbide, and is formed in a cylindrical shape having upper and lower ends opened. A processing chamber 26 is formed in the cylindrical hollow portion of the inner tube 25, and is configured so that wafers W as substrates can be accommodated in a state of being aligned in multiple stages in a horizontal posture and in a vertical direction by a boat 50 described later.

A manifold 27 is disposed below the outer tube 24 concentrically with the outer tube 24. The manifold 27 is made of, for example, stainless steel, and is formed in a cylindrical shape having upper and lower ends opened.
The manifold 27 is engaged with the inner tube 25 and the outer tube 24 and is provided so as to support them. Since the manifold 27 is supported by the heater base 20, the process tube 23 is installed vertically.
A reaction vessel is formed by the process tube 23 and the manifold 27.
An O-ring 28 (see FIG. 6) as a seal member is provided between the manifold 27 and the outer tube 24.

The manifold 27 is provided with an exhaust pipe 30 as a line for exhausting the atmosphere in the processing chamber 26. The exhaust pipe 30 is disposed at the lower end portion of the cylindrical space 29 formed by the gap between the inner tube 25 and the outer tube 24, and communicates with the cylindrical space 29.
A vacuum exhaust device 33 such as a vacuum pump is provided on the downstream side of the exhaust pipe 30 opposite to the connection side with the manifold 27 via a pressure sensor 31 as a pressure detector and a pressure adjusting device (variable conductance valve) 32. It is connected so that the pressure in the processing chamber 26 can be evacuated to a predetermined pressure (degree of vacuum).
A pressure control unit 34 is electrically connected to the pressure adjusting device 32 and the pressure sensor 31 by an electric wiring B.
Based on the pressure detected by the pressure sensor 31, the pressure control unit 34 is configured to control at a desired timing so that the pressure in the processing chamber 26 becomes a desired pressure by the pressure adjusting device 32.

A temperature sensor 35 as a temperature detector is installed in the process tube 23.
A temperature control unit 36 is electrically connected to the heater 22 and the temperature sensor 35 by electric wiring D, respectively.
The temperature control unit 36 adjusts the power supply to the heater 22 based on the temperature information detected by the temperature sensor 35, thereby controlling the temperature in the processing chamber 26 at a desired timing so as to obtain a desired temperature distribution. It is configured.

On the opposite side of the heat treatment stage 4 from the clean unit 3, a boat elevator 38 controlled by a drive control unit 37 is installed. The drive control unit 37 of the boat elevator 38 is electrically connected by the electric wiring A, and is configured to control at a desired timing so that the boat elevator 38 performs a desired operation.
A seal cap 40 is installed horizontally on the elevating arm 39 of the boat elevator 38 as a furnace port lid that hermetically closes the lower end opening of the manifold 27.

The seal cap 40 supports the boat 50 and is brought into contact with the lower end of the manifold 27 from the lower side in the vertical direction. The seal cap 40 is made of a metal such as stainless steel and is formed in a disk shape.
On the upper surface of the seal cap 40, a pair of O-rings 41 as a seal member that comes into contact with the lower end of the manifold 27 are laid in an inner and outer double (see FIG. 6).

As shown in FIG. 6, an annular groove 42 is buried in the lower surface portion of the manifold 27 opposed to the portion surrounded by the inner and outer O-rings 41, 41. Are connected so that one end of an exhaust line 43 for evacuating the space surrounded by the inner and outer O-rings 41, 41 communicates with the annular groove 42.
As shown in FIG. 1, a vacuum exhaust device 46 such as a vacuum pump is connected to the other end of the exhaust line 43 via a pressure sensor 44 as a pressure detector and a pressure adjusting device (variable conductance valve) 45. It is configured so that the pressure in the annular groove 42 can be evacuated to a predetermined pressure (degree of vacuum).
A pressure control unit 46 </ b> A is electrically connected to the pressure adjusting device 45 and the pressure sensor 44 by an electrical wiring E.
Based on the pressure detected by the pressure sensor 44, the pressure control unit 46A is configured to control the pressure in the annular groove 42 at a desired timing by using the pressure adjusting device 45.

A nozzle 47 as a gas introduction part is connected to the seal cap 40 so as to communicate with the inside of the processing chamber 26, and a gas supply pipe 48 is connected to the nozzle 47. A processing gas supply source and an inert gas supply source (not shown) are connected to the upstream end of the gas supply pipe 48 via an MFC (mass flow controller) 49 as a gas flow rate controller. A gas flow rate controller 49A is electrically connected to the MFC 49 by an electric wiring C.
The gas flow rate control unit 49A is configured to control the MFC 49 at a desired timing so that the flow rate of the supplied gas becomes a desired amount.

The pressure control unit 34, temperature control unit 36, drive control unit 37, pressure control unit 46A, and gas flow rate control unit 49A also constitute an operation unit and an input / output unit, and a main control unit 61A that controls the entire CVD apparatus. Is electrically connected.
The pressure control unit 34, the temperature control unit 36, the drive control unit 37, the pressure control unit 46A, the gas flow rate control unit 49A, and the main control unit 61A are configured as a heat treatment stage controller 61 described later.

A boat 50 as a substrate holder has upper and lower end plates 51 and 52 made of a heat-resistant material such as quartz or silicon carbide and a plurality of holding pillars 53, and has a long cylindrical shape as a whole. The holding column 53 has a plurality of slots (holding grooves) 54 (see FIG. 6) arranged at equal intervals in the longitudinal direction (vertical direction).
By inserting the peripheral edge of the wafer W into the plurality of slots 54 at the same stage at the same time, the boat 50 holds the plurality of wafers W in a horizontal posture and in a state where their centers are aligned with each other so as to hold them in multiple stages. It is configured.
Note that a plurality of heat insulating plates 55 as heat insulating members are arranged in a multi-stage in a horizontal posture below the boat 50. The heat insulating plate 55 is made of a heat-resistant material such as quartz or silicon carbide and is formed in a disk shape so that heat from the heater 22 is not easily transmitted to the manifold 27 side.
In the present embodiment, two boats 50A and 50B are used.

FIG. 7 is a block diagram showing a control system of the CVD apparatus.
Each of the control systems 60 shown in FIG. 7 includes a main controller constructed by a computer and a plurality of sub-controllers.
As sub-controllers, a heat treatment stage controller 61 for controlling the processing furnace 21, a standby stage controller 62 for controlling the boat transfer device 15 and the like, a cooling stage controller 63 for controlling the clean unit 3 and the like, a wafer transfer device 11 and the like are controlled. A wafer loading stage controller 64, a pot stage controller 65 for controlling the notch aligning device 9, a pod opener, and the like are installed.
These sub-controllers are connected to the main controller 67 by a control network 66.

The main controller 67 is connected to a console 68 as display means and input means (user interface), and a storage device 69 for storing recipes and the like.
The console 68 includes a display, a keyboard, and a mouse. The console 68 is configured to display the contents of the recipe (item names, numerical values of control parameters, etc.) on the display and to transmit the operator's command using the keyboard and mouse. .

  In the present embodiment, a pod opening delay unit 70 is constructed (programmed) in the main controller 67, and the pod opening delay unit 70 is configured to execute the process flow shown in FIG.

Hereinafter, a CVD processing method using the CVD apparatus according to the above configuration will be described with reference to a time chart shown in FIG.
In FIG. 8, K1 to K11 indicate steps to be described later, and t _{1 to} t ₁₁ indicate the required times of the steps K1 to K11, respectively.

  The following CVD processing method is executed by a control sequence for executing a recipe of a film formation process designated in advance. The designated recipe is expanded from the storage device 69 to the RAM of the main controller 67 and the like. This is implemented by commanding the controllers 61-65.

In the wafer charging process of the first boat shown by K1 in FIG. 8, the wafer W accommodated in the pod 10 is transferred to one of the pair of boats 50, 50 (hereinafter referred to as the first boat 50A). Transfer (wafer charge) is performed by the transfer device 11.
Duration t ₁ of the wafer charging step K1, when wafer charging number is 150 sheets is about 12 minutes.

In the wafer charging step K1, as shown in FIG. 1, the pod 10 containing a plurality of wafers W is supplied to the pod stage 8 and supplied to the pod stage 8 as shown in FIG. The pod 10 thus opened has its door 10a opened by a door opening / closing device.
On the other hand, as shown in FIGS. 1 and 2, the first boat 50A is placed on the standby stage 18 of the standby stage 5 and is in a state of waiting for the execution of the wafer charging step K1.

The wafer transfer device 11 transfers the wafer W to the first boat 50A.
At this time, since the wafer transfer device 11 includes five tweezers, the five wafers W are held in the five stages of the first boat 50A from the five stages of holding grooves of the pod 10 by one transfer operation. It can be transferred to the groove 54.
Here, the number of wafers W processed in batch by the first boat 50A (150 in the present embodiment) is larger than the number of wafers W stored in one pod 10 (also 25). The wafer transfer device 11 transfers a predetermined number of wafers W from the plurality of pods 10 to the first boat 50 </ b> A by being lifted and lowered by the wafer transfer device elevator 12.

Next, a boat transfer process indicated by K2 in FIG. 8 is performed.
Duration t ₂ of the boat transfer step K2 is about 0.5 minutes.

In the boat transfer process K2, the first boat 50A to which the specified number of wafers W are transferred on the standby stage 5 is transferred from the standby stage 5 to the heat treatment stage 4 by the first arm 16 of the boat transfer device 15 as shown in FIG. And is transferred onto the seal cap 40.
That is, the first arm 16 rotates about 90 degrees with the first boat 50A vertically supported, thereby transferring the first boat 50A from the standby stage 5 to the heat treatment stage 4 and receiving it on the seal cap 40. hand over. Then, the first arm 16 that has transferred the first boat 50 </ b> A to the seal cap 40 returns to the standby stage 5.

Next, a boat loading (boat loading) step indicated by K3 in FIG. 8 is performed.
Duration t ₃ of the boat loading step K3 is about 2 minutes.

In the boat carrying-in process K3, as shown in FIG. 5, the first boat 50A supported vertically by the seal cap 40 is lifted by the boat elevator 38 and carried into the processing chamber 26 of the process tube 23.
When the first boat 50A reaches the upper limit, the outer peripheral portion of the upper surface of the seal cap 40 is seated with the O-ring 41 sandwiched between the lower surface of the manifold 27 and the lower end opening of the manifold 27 is closed in a sealed state. The processing chamber 26 is airtightly closed.

When the processing chamber 26 is hermetically closed by the seal cap 40, a temperature increase / temperature stabilization process indicated by K4 in FIG. 8 is performed.
That is, the processing chamber 26 is evacuated by the exhaust pipe 30 to a predetermined degree of vacuum, and is uniformly heated by the heater 22 at a predetermined processing temperature (for example, 800 to 1000 ° C.).

When the temperature of the processing chamber 26 is stabilized, a film forming process indicated by K5 in FIG. 8 is performed.
That is, in the film forming step K5, the processing gas is supplied to the processing chamber 26 through the gas supply pipe 48 at a predetermined flow rate. Thereby, a predetermined film forming process is performed.

When the predetermined film forming process is completed, a nitrogen (N ₂ ) gas purge process indicated by K6 in FIG. 8 is performed.
That is, in the nitrogen gas purge step K6, nitrogen gas is supplied through the gas supply pipe 48 for a predetermined flow rate and time (t ₆ ), the processing chamber 26 is replaced with nitrogen gas, and the temperature is lowered.

Although it depends on the type of film to be handled, the time required for the temperature rise / temperature stabilization step K4, the film formation step K5 and the nitrogen gas purge step K6 (t ₄ + t ₅ + t ₆ ) is about 1 to 2 hours. That is, for any film type, the required time (t ₄ + t ₅ + t ₆ ) of the temperature raising / temperature stabilizing process K4, the film forming process K5, and the nitrogen gas purge process K6 is about 12 of the required time t ₁ of the wafer charge process K1. Compared to minutes, it takes a long time.

  During the heat treatment of the first boat 50A, the other boat (hereinafter referred to as the second boat 50B) of the pair of boats 50, 50 is transferred to the standby stage 18 of the standby stage 5 and is in a standby state. It has become.

Thereafter, a boat unloading (boat unloading) process indicated by K7 in FIG. 8 is performed. The required time t ₇ of the boat unloading step K7 is about 2 minutes.

That is, in the boat unloading process K7, the seal cap 40 that supports the first boat 50A is lowered by the boat elevator 38, and the first boat 50A is unloaded from the processing chamber 26.
The lower end opening of the manifold 27 from which the first boat 50A is carried out is closed by a shutter 80 (see FIG. 5), and the high temperature atmosphere in the processing chamber 26 is prevented from escaping. The first boat 50A (including the held wafer W group) unloaded from the processing chamber 26 is in a high temperature state.

Subsequently, a boat transfer process indicated by K8 in FIG. 8 is performed, and the first boat 50A in a high temperature state is transferred from the heat treatment stage 4 to the cooling stage 6.
Duration t ₈ of the boat transfer step K8 is about 0.5 minutes.

That is, as shown in FIG. 3, the high-temperature processed first boat 50 </ b> A unloaded from the processing chamber 26 is transferred from the heat treatment stage 4 on the axis of the process tube 23 to the cooling stage 6. The second arm 17 is immediately transferred and temporarily placed.
At this time, the second arm 17 rotates about 90 degrees with the processed first boat 50A vertically supported, thereby cooling the processed first boat 50A from above the seal cap 40 of the heat treatment stage 4. It is transported and placed on the cooling table 19 of the stage 6.

The high-temperature processed first boat 50A transferred to the cooling stage 19 of the cooling stage 6 is subjected to the cooling process indicated by K9 in FIG.
Duration t ₉ the cooling step K9 is about 10 minutes.

In the cooling step K9, as shown in FIG. 4, since the cooling stage 6 is set in the vicinity of the clean air outlet of the clean unit 3, the high temperature state transferred to the cooling stage 19 of the cooling stage 6 The first boat 50 </ b> A is cooled very effectively by the clean air 13 blown out from the outlet of the clean unit 3.
At this time, as shown in FIG. 4, the flow of the clean air 13 blown out from the air outlet of the clean unit 3 is the rear right corner of the housing 2 that is opposite to the standby stage 5 when viewed from the air outlet. Therefore, the heat treatment stage 4 and the standby stage 5 are not directed.
Accordingly, the clean air 13 that has contacted the processed first boat 50 </ b> A flows into the heat treatment stage 4 and the standby stage 5, thereby contaminating the wafer W group held on the second boat 50 </ b> B of the heat treatment stage 4 and the standby stage 5. That can be prevented.

Thereafter, the first boat 50A of the cooling table 19 is subjected to a boat transfer process indicated by K10 in FIG. Duration t ₇ of the boat transfer step K10 is about 0.5 minutes.
The boat transfer process K10 is performed as follows. At this time, the processed first boat 50A is sufficiently cooled to, for example, 150 ° C. or lower.

That is, the second arm 17 of the boat transfer device 15 rotates about 90 degrees in a state where the first boat 50A is vertically supported, thereby transferring the first boat 50A from the cooling stage 6 to the heat treatment stage 4.
When the first boat 50A is transferred to the heat treatment stage 4, the first arm 16 of the boat transfer device 15 is rotated about 90 degrees and moved to the heat treatment stage 4, and the first boat 50A of the heat treatment stage 4 is received.
When the first boat 50A is received, the first arm 16 reversely rotates about 90 degrees in the original direction, and the first boat 50A is transferred from the heat treatment stage 4 to the standby stage 5 and transferred to the standby table 18. In the state of being transferred to the stand 18, the three holding pillars 53 of the first boat 50 </ b> A are in a state where the wafer transfer device 11 side is open.

Next, a wafer discharge process indicated by K11 in FIG.
Duration t ₁₁ of wafer discharging step K11 is about 12 minutes.
That is, the wafer transfer device 11 receives the processed wafer W from the first boat 50 </ b> A of the standby stage 5 and transfers it to the pod 10 of the pod stage 8.
At this time, since the number of processed wafers W batch-processed by the first boat 50A is larger than the number of wafers W stored in one pod 10, the wafer transfer device 11 is moved by the wafer transfer device elevator 12. A predetermined number of wafers W are stored in a plurality of pods 10 that are replaced with the pod stage 8 while being moved up and down.
In the present embodiment, when the second boat 50B is at the timing of the boat loading process K3, the loading of the second boat 50B is prioritized.

  When all the processed wafers W are returned to the pod 10, a new wafer W to be processed next is transferred (wafer charge) to the first boat 50 </ b> A on the stand 18 by the wafer transfer device 11. The going wafer charge process K1 is executed.

  However, in the CVD processing method according to the present embodiment, wafer charging process K1 is started at a timing set by a pod opening delay sequence described later.

  Thereafter, the above-described operation is alternately repeated between the first boat 50A and the second boat 50B, whereby a large number of wafers W are batch processed by the CVD apparatus 1.

In the present embodiment, in the boat loading process K3 of the first boat 50A, the sequence is configured so that the wafer charging process K1 of the second boat 50B is started immediately after the first boat 50A is loaded into the processing chamber 26. Thus, the waiting time can be greatly shortened.
However, at the initial stage when the first boat 50A is carried into the processing chamber 26, even if the outer peripheral portion of the upper surface of the seal cap 40 is seated with the O-ring 41 sandwiched between the lower surface of the manifold 27, The seal with the O-ring 41 is not sufficient.
In this state, when the wafer charging process K1 of the second boat 50B is started and the door 10a of the pod 10 is opened, the atmosphere released from the pod 10 into the housing 2 is sucked into the processing chamber 26. Therefore, there is a problem that a natural oxide film that is not intended for control is formed on the surface of the wafer by oxygen or moisture in the atmosphere.

  In this embodiment, in order to avoid the trouble due to the leak that occurs because the seal at the O-ring 41 is not sufficient, the pod opening delay unit 70 in FIG. 9 shows in the loading process K3 of the first boat 50A. The wafer charge process K1 of the second boat 50B is started after the leakage of the O-ring 41 of the first boat 50A is completely prevented by executing the sequence.

The sequence of the pod opening delay unit 70 according to the present embodiment will be described with reference to FIG.
In a first step indicated by S1 in FIG. 9, a delay time is set in advance in the count timer of the open delay unit 70.
The delay time is about 1 second.

Next, in the second step indicated by S2 in FIG. 9, it is determined whether "the pressure sensor 44 has reached a predetermined value".
In the present embodiment, when the seal cap 40 comes into contact with the lower end surface of the manifold 27 in the boat loading process K3 of the first boat 50A, the inside of the annular groove 42 is evacuated by the exhaust line 43, and the pressure in the annular groove 42 is increased. Is measured by a pressure sensor 44. When the inside of the annular groove 42 is evacuated, the seal cap 40 is vacuum-adsorbed on the lower surface of the manifold 27, so that leakage at the O-ring 41 can be completely prevented.

  If the pressure sensor 44 has not reached the predetermined value (NO), the process returns to the second step S2, and the second step S2 is repeated.

When the pressure sensor 44 reaches a predetermined value (YES), the process proceeds to the third step S3.
In the third step S3, it is determined whether "the count timer is zero".

If the count timer is not zero (NO), the process proceeds to the fourth step S4.
In the fourth step S4, the opening operation of the pod 10 is prohibited.
Further, in the fifth step S5, “count timer-1” is executed.
Subsequently, the process returns to the second step S2.

If the count timer is zero (YES), the process proceeds to the sixth step S6.
In the sixth step S6, the prohibition of the opening operation of the pod 10 is released.
Subsequently, in the seventh step S7, the pod 10 is opened.
With the opening of the pod 10, the sequence of the pod opening delay ends.

  With the opening of the pod 10, the wafer charging process K1 for the second boat 50B starts.

  In the above description, the case where the start time of the wafer charging process K1 of the second boat 50B, that is, the opening time of the pod 10 is delayed has been described. However, the first boat 50A and the second boat 50B operate alternately in the same manner. Therefore, the wafer charging process K1 of the first boat 50A is similarly delayed and executed.

  In the present embodiment, the case where the opening time of the pod 10 is delayed in the wafer charging process K1 has been described. However, the wafer discharging process K11 may be executed with a delay as well.

  According to the embodiment, the following effects can be obtained.

  After completely preventing leakage at the O-ring of one boat in the loading process of one boat, the wafer charging process of the other boat is started, that is, by opening the pod, the trouble due to leakage at the O-ring of the boat loading process Therefore, it is possible to prevent the occurrence of a problem that the natural oxide film is formed on the surface of the wafer by oxygen or moisture in the atmosphere.

  Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

  For example, the method for detecting leaks in the O-ring is not limited to using a method of judging by “whether the pressure sensor has reached a predetermined value”, but a piezoelectric element is interposed on the contact surface between the seal cap and the processing furnace. A method of judging by the above may be used.

  The CVD apparatus can be used for heat treatments such as annealing, oxide film formation, diffusion, and film formation.

  In this embodiment, the case where a batch type vertical hot wall type CVD apparatus is used has been described. However, the present invention is not limited to this, and can be applied to all substrate processing apparatuses such as a batch type horizontal hot wall type CVD apparatus. .

  In the above embodiment, the case where the heat treatment is performed on the wafer has been described. However, the substrate to be processed may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

It is a plane sectional view showing a CVD device which is one embodiment of the present invention. FIG. It is a perspective view which shows during the cooling of the processed boat. It is a plane sectional view similarly. It is front sectional drawing which passes along a processing furnace. It is front sectional drawing which shows during the film-forming process of a processing furnace. It is a block diagram which shows a control system. It is a time chart which shows a CVD processing method. It is a flowchart which shows a pod open | release delay sequence.

Explanation of symbols

  W ... wafer (substrate), 1 ... CVD apparatus (substrate processing apparatus), 2 ... housing, 3 ... clean unit, 4 ... heat treatment stage, 5 ... standby stage, 6 ... cooling stage, 7 ... wafer loading stage, 8 ... Pod stage, 9 ... Notch aligning device, 10 ... Pod, 10a ... Door, 11 ... Wafer transfer device, 12 ... Elevator, 13 ... Clean air, 14 ... Exhaust fan, 15 ... Boat transfer device, 16 ... First arm , 17 ... Second arm, 18 ... Standby stand, 19 ... Cooling stand, 20 ... Heater base, 21 ... Processing furnace, 22 ... Heater, 23 ... Process tube, 24 ... Outer tube, 25 ... Inner tube, 26 ... Processing chamber 27 ... Manifold, 28 ... O-ring, 29 ... Cylindrical space, 30 ... Exhaust pipe, 31 ... Pressure sensor, 32 ... Pressure regulator (variable conductance valve) 33 ... Vacuum exhaust device, 34 ... Pressure controller, 35 ... Temperature sensor, 36 ... Temperature controller, 37 ... Drive controller, 38 ... Boat elevator, 39 ... Lift arm, 40 ... Seal cap, 41 ... O-ring, 42 ... annular groove, 43 ... exhaust line, 44 ... pressure sensor, 45 ... pressure adjusting device (variable conductance valve), 46 ... vacuum exhaust device, 47 ... nozzle, 48 ... gas supply pipe, 49 ... MFC (mass flow controller), 49A ... Gas flow control unit, 50 ... Boat, 50A ... First boat, 50B ... Second boat, 53 ... Holding column, 54 ... Slot (holding groove), 55 ... Thermal insulation plate, 60 ... Control system, 61 ... Heat treatment stage Controller 62 ... Standby stage controller 63 ... Cooling stage controller 64 ... Wafer loading stage controller 65 Pot stage controller, 66 ... control network 67 ... main controller, 68 ... console (control console), 69 ... storage device, 70 ... pod opening delay unit.

Claims (5)

The boat for carrying out a plurality of substrates into the processing chamber comprises two or more units, while the cover body supporting the one boat holding the plurality of substrates are sealed the processing chamber, the other In a substrate processing apparatus for transferring a plurality of new substrates from a pod to a boat by a substrate transfer device,
The one boat after carried into the processing chamber, if the formed space between the seal member for sealing the processing chamber is laid before Kifuta body reaches a predetermined pressure, the delay time set zero If the delay time is zero, the main controller is configured to open the pod and start the operation of transferring the plurality of substrates to the other boat by the substrate transfer device. A substrate processing apparatus. The substrate processing method of transferring to, by a new plurality of substrates the substrate transfer device from the pod to the other boats while the lid supporting the one boat holding the plurality of substrates are sealed processing chamber Because
The one boat after carried into the processing chamber, if the formed space between the seal member for sealing the processing chamber is laid before Kifuta body reaches a predetermined pressure, the delay time set zero Confirming whether the delay time is zero, the pod is opened, and the operation of transferring the plurality of substrates to the other boat by the substrate transfer device is started. Method. While one boat holding a plurality of substrates is carried into the processing chamber and the plurality of substrates are being processed, a plurality of new substrates are transferred from the pod to the other boat by the substrate transfer device. A method of manufacturing a semiconductor device including a process for mounting,
Wherein one of the boat after carried into the processing chamber, if the formed space between the seal member for sealing the processing chamber is laid in the lid which supports the one boat reaches a predetermined pressure, is set The delay time is zero, and if the delay time is zero, the pod is opened, and the operation of transferring the plurality of substrates to the other boat by the substrate transfer device is started. A method of manufacturing a semiconductor device.   While the lid that supports one boat holding multiple substrates is sealing the processing chamber, control is performed so that multiple new substrates are transferred from the pod to the other boat by the substrate transfer device. A main controller that
  After the one boat is carried into the processing chamber, if the space formed between the sealing members laid on the lid and sealing the processing chamber reaches a predetermined pressure, the set delay time is zero. If the delay time is zero, the pod is opened, and the work of transferring the plurality of substrates to the other boat by the substrate transfer device is started.
  Main controller characterized by that.   While the lid that supports one boat holding multiple substrates is sealing the processing chamber, control is performed so that multiple new substrates are transferred from the pod to the other boat by the substrate transfer device. A program executed by the main controller,
  After the one boat is carried into the processing chamber, if the space formed between the sealing members laid on the lid and sealing the processing chamber reaches a predetermined pressure, the set delay time is zero. If the delay time is zero, the pod is opened to start the operation of transferring the plurality of substrates to the other boat by the substrate transfer device.
  A program characterized by that.

Images