JPH0217992B2 - - Google Patents

Info

Publication number
JPH0217992B2
JPH0217992B2 JP55175508A JP17550880A JPH0217992B2 JP H0217992 B2 JPH0217992 B2 JP H0217992B2 JP 55175508 A JP55175508 A JP 55175508A JP 17550880 A JP17550880 A JP 17550880A JP H0217992 B2 JPH0217992 B2 JP H0217992B2
Authority
JP
Japan
Prior art keywords
layer
solid
state imaging
imaging device
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55175508A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5799086A (en
Inventor
Yoshihiro Hamakawa
Yasusuke Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP55175508A priority Critical patent/JPS5799086A/ja
Priority to US06/329,097 priority patent/US4453184A/en
Publication of JPS5799086A publication Critical patent/JPS5799086A/ja
Publication of JPH0217992B2 publication Critical patent/JPH0217992B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H10F30/2235—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP55175508A 1980-12-12 1980-12-12 Solid-state image sensor Granted JPS5799086A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55175508A JPS5799086A (en) 1980-12-12 1980-12-12 Solid-state image sensor
US06/329,097 US4453184A (en) 1980-12-12 1981-12-09 Solid state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55175508A JPS5799086A (en) 1980-12-12 1980-12-12 Solid-state image sensor

Publications (2)

Publication Number Publication Date
JPS5799086A JPS5799086A (en) 1982-06-19
JPH0217992B2 true JPH0217992B2 (en, 2012) 1990-04-24

Family

ID=15997267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55175508A Granted JPS5799086A (en) 1980-12-12 1980-12-12 Solid-state image sensor

Country Status (2)

Country Link
US (1) US4453184A (en, 2012)
JP (1) JPS5799086A (en, 2012)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4571626A (en) * 1981-09-17 1986-02-18 Matsushita Electric Industrial Co., Ltd. Solid state area imaging apparatus
US6664566B1 (en) * 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS59148473A (ja) * 1983-02-14 1984-08-25 Junichi Nishizawa ２次元固体撮像装置の読出し方法
JPS59153381A (ja) * 1983-02-22 1984-09-01 Junichi Nishizawa ２次元固体撮像装置
US4660095A (en) * 1984-05-04 1987-04-21 Energy Conversion Devices, Inc. Contact-type document scanner and method
US4698495A (en) * 1984-06-12 1987-10-06 Nec Corporation Amorphous silicon photo-sensor for a contact type image sensor
JPS616861A (ja) * 1984-06-20 1986-01-13 Matsushita Electric Ind Co Ltd 光センサおよびその製造方法
EP0186162B1 (en) * 1984-12-24 1989-05-31 Kabushiki Kaisha Toshiba Solid state image sensor
FR2585183B1 (fr) * 1985-07-19 1987-10-09 Thomson Csf Procede de fabrication d'un detecteur d'image lumineuse et detecteur matriciel bidimensionnel obtenu par ce procede
JP3238160B2 (ja) * 1991-05-01 2001-12-10 株式会社東芝 積層形固体撮像装置
US7875949B2 (en) * 2008-02-28 2011-01-25 Visera Technologies Company Limited Image sensor device with submicron structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4005327A (en) * 1975-10-28 1977-01-25 The United States Of America As Represented By The Secretary Of The Air Force Low beam velocity retina for Schottky infrared vidicons
US4348611A (en) * 1978-03-02 1982-09-07 Wolfgang Ruppel Ferroelectric or pyroelectric sensor utilizing a sodium nitrite layer

Also Published As

Publication number Publication date
US4453184A (en) 1984-06-05
JPS5799086A (en) 1982-06-19

Similar Documents

Publication Publication Date Title
US7030413B2 (en) Photovoltaic device with intrinsic amorphous film at junction, having varied optical band gap through thickness thereof
US4728370A (en) Amorphous photovoltaic elements
US4315097A (en) Back contacted MIS photovoltaic cell
US4523214A (en) Solid state image pickup device utilizing microcrystalline and amorphous silicon
JPH06151801A (ja) 光電変換装置及び光電変換装置の製造方法
US11996491B2 (en) Solar cell module
US4781765A (en) Photovoltaic device
JPH0217992B2 (en, 2012)
JPH023552B2 (en, 2012)
US4980736A (en) Electric conversion device
JPS6258552B2 (en, 2012)
JPH0334667B2 (en, 2012)
JPS6341227B2 (en, 2012)
US4714950A (en) Solid-state photo sensor device
US5600152A (en) Photoelectric conversion device and its manufacturing method
JP4187328B2 (ja) 光起電力素子の製造方法
JPH0122991B2 (en, 2012)
JPH038115B2 (en, 2012)
JPH05145110A (ja) 光電変換装置及びその駆動方法
JPS586165A (ja) 固体撮像装置
JPH09102627A (ja) 光電変換装置
JPH05145108A (ja) 光電変換装置の駆動方法
JPH05145109A (ja) 光電変換装置及びその駆動方法
JPS5983916A (ja) アモルフアス多元系半導体
JP3451833B2 (ja) 固体撮像装置及び固体撮像装置の製造方法