JPH023552B2 - - Google Patents

Info

Publication number
JPH023552B2
JPH023552B2 JP56059612A JP5961281A JPH023552B2 JP H023552 B2 JPH023552 B2 JP H023552B2 JP 56059612 A JP56059612 A JP 56059612A JP 5961281 A JP5961281 A JP 5961281A JP H023552 B2 JPH023552 B2 JP H023552B2
Authority
JP
Japan
Prior art keywords
electrode
photodetector
solid
state imaging
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56059612A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57173966A (en
Inventor
Kazuhiro Kawajiri
Juzo Mizobuchi
Mitsuo Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP56059612A priority Critical patent/JPS57173966A/ja
Publication of JPS57173966A publication Critical patent/JPS57173966A/ja
Publication of JPH023552B2 publication Critical patent/JPH023552B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP56059612A 1981-04-20 1981-04-20 Solid state image pickup device Granted JPS57173966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56059612A JPS57173966A (en) 1981-04-20 1981-04-20 Solid state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56059612A JPS57173966A (en) 1981-04-20 1981-04-20 Solid state image pickup device

Publications (2)

Publication Number Publication Date
JPS57173966A JPS57173966A (en) 1982-10-26
JPH023552B2 true JPH023552B2 (en, 2012) 1990-01-24

Family

ID=13118239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56059612A Granted JPS57173966A (en) 1981-04-20 1981-04-20 Solid state image pickup device

Country Status (1)

Country Link
JP (1) JPS57173966A (en, 2012)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US8058615B2 (en) 2008-02-29 2011-11-15 Sionyx, Inc. Wide spectral range hybrid image detector
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN103081128B (zh) 2010-06-18 2016-11-02 西奥尼克斯公司 高速光敏设备及相关方法
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
EP2732402A2 (en) 2011-07-13 2014-05-21 Sionyx, Inc. Biometric imaging devices and associated methods
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
WO2014127376A2 (en) 2013-02-15 2014-08-21 Sionyx, Inc. High dynamic range cmos image sensor having anti-blooming properties and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717185A (en) * 1980-07-04 1982-01-28 Canon Inc Photosensor

Also Published As

Publication number Publication date
JPS57173966A (en) 1982-10-26

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