JPS6258552B2 - - Google Patents

Info

Publication number
JPS6258552B2
JPS6258552B2 JP55115545A JP11554580A JPS6258552B2 JP S6258552 B2 JPS6258552 B2 JP S6258552B2 JP 55115545 A JP55115545 A JP 55115545A JP 11554580 A JP11554580 A JP 11554580A JP S6258552 B2 JPS6258552 B2 JP S6258552B2
Authority
JP
Japan
Prior art keywords
solid
state imaging
imaging device
amorphous semiconductor
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55115545A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5739588A (en
Inventor
Masatoshi Tabei
Mitsuru Ikeda
Yasusuke Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP55115545A priority Critical patent/JPS5739588A/ja
Publication of JPS5739588A publication Critical patent/JPS5739588A/ja
Publication of JPS6258552B2 publication Critical patent/JPS6258552B2/ja
Priority to US07/277,414 priority patent/US4860076A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP55115545A 1980-08-22 1980-08-22 Solid state image pickup device Granted JPS5739588A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55115545A JPS5739588A (en) 1980-08-22 1980-08-22 Solid state image pickup device
US07/277,414 US4860076A (en) 1980-08-22 1988-11-29 Solid state image device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55115545A JPS5739588A (en) 1980-08-22 1980-08-22 Solid state image pickup device

Publications (2)

Publication Number Publication Date
JPS5739588A JPS5739588A (en) 1982-03-04
JPS6258552B2 true JPS6258552B2 (en, 2012) 1987-12-07

Family

ID=14665178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55115545A Granted JPS5739588A (en) 1980-08-22 1980-08-22 Solid state image pickup device

Country Status (2)

Country Link
US (1) US4860076A (en, 2012)
JP (1) JPS5739588A (en, 2012)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59148363A (ja) * 1983-02-14 1984-08-25 Matsushita Electric Ind Co Ltd 固体撮像装置
CA1269164A (en) * 1986-03-24 1990-05-15 Metin Aktik Photosensitive diode with hydrogenated amorphous silicon layer
JPH0682821B2 (ja) * 1988-04-13 1994-10-19 工業技術院長 固体撮像装置
JPH0734467B2 (ja) * 1989-11-16 1995-04-12 富士ゼロックス株式会社 イメージセンサ製造方法
US5307169A (en) * 1991-05-07 1994-04-26 Olympus Optical Co., Ltd. Solid-state imaging device using high relative dielectric constant material as insulating film
US5502488A (en) * 1991-05-07 1996-03-26 Olympus Optical Co., Ltd. Solid-state imaging device having a low impedance structure
TW440908B (en) * 2000-03-27 2001-06-16 Mosel Vitelic Inc Method for forming a self-aligned contact
WO2016046685A1 (en) 2014-09-26 2016-03-31 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US11728356B2 (en) 2015-05-14 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and imaging device
US9754980B2 (en) 2015-06-30 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and imaging device
US11437418B2 (en) * 2016-02-29 2022-09-06 Sony Corporation Solid-state image pickup device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4239554A (en) * 1978-07-17 1980-12-16 Shunpei Yamazaki Semiconductor photoelectric conversion device
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
US4354104A (en) * 1980-05-06 1982-10-12 Matsushita Electric Industrial Co., Ltd. Solid-state image pickup device

Also Published As

Publication number Publication date
JPS5739588A (en) 1982-03-04
US4860076A (en) 1989-08-22

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