JPH0334667B2 - - Google Patents

Info

Publication number
JPH0334667B2
JPH0334667B2 JP56016702A JP1670281A JPH0334667B2 JP H0334667 B2 JPH0334667 B2 JP H0334667B2 JP 56016702 A JP56016702 A JP 56016702A JP 1670281 A JP1670281 A JP 1670281A JP H0334667 B2 JPH0334667 B2 JP H0334667B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
imaging device
conversion element
switch
function section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56016702A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56124279A (en
Inventor
Yoshihiko Mizushima
Akitsu Takeda
Masahiro Sakagami
Toshiro Ogino
Kazumi Komya
Hideo Ito
Masayoshi Oka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of JPS56124279A publication Critical patent/JPS56124279A/ja
Publication of JPH0334667B2 publication Critical patent/JPH0334667B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/121—Active materials comprising only selenium or only tellurium
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/40—Picture signal circuits
    • H04N1/40056—Circuits for driving or energising particular reading heads or original illumination means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP1670281A 1980-02-06 1981-02-06 Image pickup device Granted JPS56124279A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/118,907 US4341954A (en) 1980-02-06 1980-02-06 Photo-electric converting apparatus

Publications (2)

Publication Number Publication Date
JPS56124279A JPS56124279A (en) 1981-09-29
JPH0334667B2 true JPH0334667B2 (en, 2012) 1991-05-23

Family

ID=22381469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1670281A Granted JPS56124279A (en) 1980-02-06 1981-02-06 Image pickup device

Country Status (2)

Country Link
US (1) US4341954A (en, 2012)
JP (1) JPS56124279A (en, 2012)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167002A (en) * 1981-04-07 1982-10-14 Minolta Camera Co Ltd Focus detecting element
JPS5848962A (ja) * 1981-09-18 1983-03-23 Hitachi Ltd 光センサアレイ装置
JPS58146972A (ja) * 1982-02-26 1983-09-01 Toshiba Corp 光学的情報読取り装置
US4633287A (en) * 1982-08-09 1986-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectric conversion device
DE3313764A1 (de) * 1983-04-15 1984-10-18 Siemens AG, 1000 Berlin und 8000 München Elektrisches bildaufnahmeverfahren und geraet zu seiner durchfuehrung
JPS63161780A (ja) * 1986-12-25 1988-07-05 Hamamatsu Photonics Kk 固体撮像素子
JPS63161784A (ja) * 1986-12-25 1988-07-05 Hamamatsu Photonics Kk 固体撮像素子
JP3066944B2 (ja) * 1993-12-27 2000-07-17 キヤノン株式会社 光電変換装置、その駆動方法及びそれを有するシステム
US7038242B2 (en) * 2001-02-28 2006-05-02 Agilent Technologies, Inc. Amorphous semiconductor open base phototransistor array
FR2833410B1 (fr) * 2001-12-10 2004-03-19 Commissariat Energie Atomique Procede de realisation d'un dispositif d'imagerie
US20070041063A1 (en) * 2005-08-18 2007-02-22 Matsushita Electric Industrial Co., Ltd. Image sensor

Also Published As

Publication number Publication date
JPS56124279A (en) 1981-09-29
US4341954A (en) 1982-07-27

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