JPS56124279A - Image pickup device - Google Patents
Image pickup deviceInfo
- Publication number
- JPS56124279A JPS56124279A JP1670281A JP1670281A JPS56124279A JP S56124279 A JPS56124279 A JP S56124279A JP 1670281 A JP1670281 A JP 1670281A JP 1670281 A JP1670281 A JP 1670281A JP S56124279 A JPS56124279 A JP S56124279A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- emitter
- image pickup
- pickup device
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 230000002463 transducing effect Effects 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/40—Picture signal circuits
- H04N1/40056—Circuits for driving or energising particular reading heads or original illumination means
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/118,907 US4341954A (en) | 1980-02-06 | 1980-02-06 | Photo-electric converting apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56124279A true JPS56124279A (en) | 1981-09-29 |
JPH0334667B2 JPH0334667B2 (ja) | 1991-05-23 |
Family
ID=22381469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1670281A Granted JPS56124279A (en) | 1980-02-06 | 1981-02-06 | Image pickup device |
Country Status (2)
Country | Link |
---|---|
US (1) | US4341954A (ja) |
JP (1) | JPS56124279A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58146972A (ja) * | 1982-02-26 | 1983-09-01 | Toshiba Corp | 光学的情報読取り装置 |
JPS63161784A (ja) * | 1986-12-25 | 1988-07-05 | Hamamatsu Photonics Kk | 固体撮像素子 |
JPS63161780A (ja) * | 1986-12-25 | 1988-07-05 | Hamamatsu Photonics Kk | 固体撮像素子 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57167002A (en) * | 1981-04-07 | 1982-10-14 | Minolta Camera Co Ltd | Focus detecting element |
JPS5848962A (ja) * | 1981-09-18 | 1983-03-23 | Hitachi Ltd | 光センサアレイ装置 |
US4633287A (en) * | 1982-08-09 | 1986-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectric conversion device |
DE3313764A1 (de) * | 1983-04-15 | 1984-10-18 | Siemens AG, 1000 Berlin und 8000 München | Elektrisches bildaufnahmeverfahren und geraet zu seiner durchfuehrung |
JP3066944B2 (ja) * | 1993-12-27 | 2000-07-17 | キヤノン株式会社 | 光電変換装置、その駆動方法及びそれを有するシステム |
US7038242B2 (en) * | 2001-02-28 | 2006-05-02 | Agilent Technologies, Inc. | Amorphous semiconductor open base phototransistor array |
FR2833410B1 (fr) * | 2001-12-10 | 2004-03-19 | Commissariat Energie Atomique | Procede de realisation d'un dispositif d'imagerie |
US20070041063A1 (en) * | 2005-08-18 | 2007-02-22 | Matsushita Electric Industrial Co., Ltd. | Image sensor |
-
1980
- 1980-02-06 US US06/118,907 patent/US4341954A/en not_active Expired - Lifetime
-
1981
- 1981-02-06 JP JP1670281A patent/JPS56124279A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58146972A (ja) * | 1982-02-26 | 1983-09-01 | Toshiba Corp | 光学的情報読取り装置 |
JPS63161784A (ja) * | 1986-12-25 | 1988-07-05 | Hamamatsu Photonics Kk | 固体撮像素子 |
JPS63161780A (ja) * | 1986-12-25 | 1988-07-05 | Hamamatsu Photonics Kk | 固体撮像素子 |
JPH0511829B2 (ja) * | 1986-12-25 | 1993-02-16 | Hamamatsu Photonics Kk | |
JPH0511830B2 (ja) * | 1986-12-25 | 1993-02-16 | Hamamatsu Photonics Kk |
Also Published As
Publication number | Publication date |
---|---|
JPH0334667B2 (ja) | 1991-05-23 |
US4341954A (en) | 1982-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56124279A (en) | Image pickup device | |
EP0168030B1 (en) | Contact type image sensor and driving method therefor | |
JPS55105480A (en) | Solid state pickup device | |
EP0437340A2 (en) | Image sensor | |
JPS56165473A (en) | Semiconductor pickup device | |
JPS5884568A (ja) | 原稿読取装置 | |
JPS5593252A (en) | Substrate potential generating apparatus | |
JPS5795769A (en) | Semiconductor image pickup device | |
JPS57173966A (en) | Solid state image pickup device | |
JPH0379910B2 (ja) | ||
JPS5976463A (ja) | 固体イメ−ジセンサ | |
GB1517902A (en) | Piezo-resistive device for the electrical read-out of an optical image | |
JPH05275671A (ja) | フォトトランジスタおよびそれを用いたイメージセンサ | |
JPS5527772A (en) | Solid state pickup device | |
JPS57173969A (en) | Solid state image pickup device | |
JPS54139341A (en) | Information processing unit | |
JPS57173967A (en) | Solid state image pickup device | |
JPH056386B2 (ja) | ||
JPS6415967A (en) | Solid-state image sensing element | |
JPS63263774A (ja) | フオトトランジスタ | |
JPS5586273A (en) | Solid-state pickup unit | |
EP0327344A3 (en) | Solid state image sensor | |
JP2501207B2 (ja) | 光電変換装置 | |
JPS6416084A (en) | Solid-state image pickup device | |
JPH0448862A (ja) | イメージセンサおよびその駆動方法 |