JPH0217935B2 - - Google Patents

Info

Publication number
JPH0217935B2
JPH0217935B2 JP60000431A JP43185A JPH0217935B2 JP H0217935 B2 JPH0217935 B2 JP H0217935B2 JP 60000431 A JP60000431 A JP 60000431A JP 43185 A JP43185 A JP 43185A JP H0217935 B2 JPH0217935 B2 JP H0217935B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
gate
thickness
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60000431A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61160977A (ja
Inventor
Kotaro Tsubaki
Minoru Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP60000431A priority Critical patent/JPS61160977A/ja
Publication of JPS61160977A publication Critical patent/JPS61160977A/ja
Publication of JPH0217935B2 publication Critical patent/JPH0217935B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60000431A 1985-01-08 1985-01-08 電界効果トランジスタ Granted JPS61160977A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60000431A JPS61160977A (ja) 1985-01-08 1985-01-08 電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60000431A JPS61160977A (ja) 1985-01-08 1985-01-08 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS61160977A JPS61160977A (ja) 1986-07-21
JPH0217935B2 true JPH0217935B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-04-24

Family

ID=11473621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60000431A Granted JPS61160977A (ja) 1985-01-08 1985-01-08 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS61160977A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872038A (en) * 1988-02-24 1989-10-03 Arizona Board Of Regents Lateral surface superlattice having negative differential conductivity novel process for producing same
US5023671A (en) * 1989-03-27 1991-06-11 International Business Machines Corporation Microstructures which provide superlattice effects and one-dimensional carrier gas channels

Also Published As

Publication number Publication date
JPS61160977A (ja) 1986-07-21

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