JPH02168612A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH02168612A JPH02168612A JP1242600A JP24260089A JPH02168612A JP H02168612 A JPH02168612 A JP H02168612A JP 1242600 A JP1242600 A JP 1242600A JP 24260089 A JP24260089 A JP 24260089A JP H02168612 A JPH02168612 A JP H02168612A
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- forming
- insulating film
- lower resist
- layer resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 20
- 150000002500 ions Chemical class 0.000 claims description 10
- 238000005468 ion implantation Methods 0.000 abstract description 15
- 150000004767 nitrides Chemical class 0.000 abstract description 13
- 108010075750 P-Type Calcium Channels Proteins 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 29
- 238000005530 etching Methods 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 8
- 108091006146 Channels Proteins 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 5
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- 206010011732 Cyst Diseases 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1242600A JPH02168612A (ja) | 1988-09-19 | 1989-09-19 | 半導体装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63-234521 | 1988-09-19 | ||
| JP23452188 | 1988-09-19 | ||
| JP1242600A JPH02168612A (ja) | 1988-09-19 | 1989-09-19 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02168612A true JPH02168612A (ja) | 1990-06-28 |
| JPH0557730B2 JPH0557730B2 (enrdf_load_stackoverflow) | 1993-08-24 |
Family
ID=16972328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1242600A Granted JPH02168612A (ja) | 1988-09-19 | 1989-09-19 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02168612A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013033168A (ja) * | 2011-08-03 | 2013-02-14 | Japan Display East Co Ltd | 表示装置及び表示装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5935446A (ja) * | 1982-08-23 | 1984-02-27 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPS62133722A (ja) * | 1985-12-05 | 1987-06-16 | Ricoh Co Ltd | 半導体装置の製造方法 |
-
1989
- 1989-09-19 JP JP1242600A patent/JPH02168612A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5935446A (ja) * | 1982-08-23 | 1984-02-27 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPS62133722A (ja) * | 1985-12-05 | 1987-06-16 | Ricoh Co Ltd | 半導体装置の製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013033168A (ja) * | 2011-08-03 | 2013-02-14 | Japan Display East Co Ltd | 表示装置及び表示装置の製造方法 |
| US9099359B2 (en) | 2011-08-03 | 2015-08-04 | Japan Display Inc. | Display device and method for manufacturing display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0557730B2 (enrdf_load_stackoverflow) | 1993-08-24 |
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