JPH02148888A - Multilayer interconnection substrate - Google Patents
Multilayer interconnection substrateInfo
- Publication number
- JPH02148888A JPH02148888A JP30305688A JP30305688A JPH02148888A JP H02148888 A JPH02148888 A JP H02148888A JP 30305688 A JP30305688 A JP 30305688A JP 30305688 A JP30305688 A JP 30305688A JP H02148888 A JPH02148888 A JP H02148888A
- Authority
- JP
- Japan
- Prior art keywords
- interlayer insulating
- insulating film
- thickness
- connection window
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims description 10
- 239000011229 interlayer Substances 0.000 claims abstract description 50
- 239000010410 layer Substances 0.000 claims description 46
- 229920006015 heat resistant resin Polymers 0.000 claims description 17
- 238000005530 etching Methods 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 239000002966 varnish Substances 0.000 abstract description 3
- 239000006185 dispersion Substances 0.000 abstract 2
- 230000008602 contraction Effects 0.000 abstract 1
- 238000009987 spinning Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 14
- 238000001723 curing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 241000612182 Rexea solandri Species 0.000 description 1
- -1 and for example Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007942 layered tablet Substances 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は多層配線基板に関し、特に二層積層構造の耐熱
性樹脂層からなる層間絶縁層を含む多層配線基板に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a multilayer wiring board, and more particularly to a multilayer wiring board including an interlayer insulating layer made of a heat-resistant resin layer with a two-layer laminated structure.
従来、この種の多層錠！Ｍ基板として第３図に示すもの
がある。即ち、絶縁基板１上に第１の配線層２を形成し
ており、この上にポリアミック酸）８液をスピンコード
法を用いて塗布し、１２０〜１５０°Ｃの熱処理によっ
て半硬化状態にし、更に所定の位置に第１の接続窓３ａ
を開設した上で、２００°Ｃ以上の温度で加熱硬化して
耐熱性樹脂層からなる第１層間絶縁膜３を形成している
。Conventionally, this kind of multi-layered tablet! There is one shown in FIG. 3 as an M substrate. That is, a first wiring layer 2 is formed on an insulating substrate 1, and a polyamic acid (8) solution is applied thereon using a spin cord method, and is semi-cured by heat treatment at 120 to 150°C. Furthermore, a first connection window 3a is provided at a predetermined position.
After opening, the first interlayer insulating film 3 made of a heat-resistant resin layer is formed by heating and curing at a temperature of 200° C. or higher.
また、この上には、第１層間絶縁膜３と同様に形成した
耐熱性樹脂層からなる第２層間絶縁膜４を形成しており
、前記第１の接続窓３ａと同じ位置に第２の接続窓４ａ
を設けている。その後、これらを３００〜４００°Ｃの
温度で熱処理して最終硬化を行っている。Further, on this, a second interlayer insulating film 4 made of a heat-resistant resin layer formed in the same manner as the first interlayer insulating film 3 is formed, and a second interlayer insulating film 4 is formed at the same position as the first connection window 3a. Connection window 4a
has been established. Thereafter, these are heat treated at a temperature of 300 to 400°C for final curing.
そして、これら層間絶縁膜３，４上に第２の配線層５を
形成し、前記接続窓３ａ、４ａを通して第１の配線Ｎ２
に電気接続している。Then, a second wiring layer 5 is formed on these interlayer insulating films 3 and 4, and a first wiring N2 is formed through the connection windows 3a and 4a.
electrically connected to.
上述した従来の多層配線基板では、第１及び第２の各層
間絶縁膜３，４を構成する耐熱性樹脂層を同一の条件で
形成しているので、第２の接続窓４ａの加工においてエ
ツチング残りを生じ易く、その結果筒１の配線層２と第
２の配線層５の間の電気的接続が不安定になるという問
題がある。In the above-mentioned conventional multilayer wiring board, since the heat-resistant resin layers constituting the first and second interlayer insulating films 3 and 4 are formed under the same conditions, etching is not required when processing the second connection window 4a. There is a problem in that the electrical connection between the wiring layer 2 and the second wiring layer 5 of the cylinder 1 becomes unstable as a result.
即ち、第４図（ａ）のように、第１の配線層２を形成し
た絶縁基板１上に形成する第１層間絶縁膜３では、スピ
ンコード法によって塗布形成しているため、第１の接続
窓３ａが設けられる部分、つまり第１の配線層２の上に
おいて膜厚Ｔ１は他の部分の膜厚Ｔよりも薄くなる。That is, as shown in FIG. 4(a), the first interlayer insulating film 3 formed on the insulating substrate 1 on which the first wiring layer 2 is formed is formed by coating by the spin code method. The film thickness T1 in the portion where the connection window 3a is provided, that is, on the first wiring layer 2, is thinner than the film thickness T in other portions.
一方、第４図（ｂ）のように、上側に形成する第２層間
絶縁膜４では、同様にスピンコード法によって塗布形成
しているため、第２の接続窓４ａが設けられる部分、つ
まり第１の接続窓３ａの中での膜厚Ｔ２は他の部分の膜
厚Ｔよりも厚くなる。On the other hand, as shown in FIG. 4(b), since the second interlayer insulating film 4 formed on the upper side is similarly formed by coating by the spin code method, the portion where the second connection window 4a is provided, that is, the The film thickness T2 in one connection window 3a is thicker than the film thickness T in other parts.
したがって、第１層間絶縁膜の膜厚が第２層間絶縁膜の
膜厚に等しいか、大きい場合には、第２の接続窓４ａの
形成条件を第１の接続窓３ａの形成条件と同様に行う限
り、第２の接続窓４ａを全部の厚さにわたってエンチン
グすることが困難になり、結果として第２層間絶縁膜４
の一部が第１の接続窓３ａ内に残される。これにより、
第１の配線層２の表面が露呈されず、第２の配線層５と
の電気的接続が不安定なものとなる。Therefore, if the thickness of the first interlayer insulating film is equal to or greater than the thickness of the second interlayer insulating film, the conditions for forming the second connection window 4a are the same as the conditions for forming the first connection window 3a. If etching is performed, it becomes difficult to etch the entire thickness of the second connection window 4a, and as a result, the second interlayer insulating film 4
A portion of is left in the first connection window 3a. This results in
The surface of the first wiring layer 2 is not exposed, and the electrical connection with the second wiring layer 5 becomes unstable.
本発明は第２層間絶縁膜のエツチング残りを防止して、
上下の配線層の好適な電気接続を得ることを可能にした
多層配線基板を提供することを目的とする。The present invention prevents etching residue on the second interlayer insulating film,
An object of the present invention is to provide a multilayer wiring board that makes it possible to obtain a suitable electrical connection between upper and lower wiring layers.
本発明の多層配線基板は、絶縁基板上に形成した第１の
配線層と、この第１の配線層上の一部に第１の接続窓を
有する耐熱性樹脂層からなる第１層間絶縁膜と、この第
１の接続窓と同じ位置に第２の接続窓を有する耐熱性樹
脂層からなる第２層間絶縁膜と、前記第１及び第２の接
続窓を通して前記第１の配線層に電気的に接続される第
２の配線層を有し、前記第２層間絶縁膜のＨり厚を第１
層間絶縁膜の膜厚よりも厚く形成している。The multilayer wiring board of the present invention includes a first wiring layer formed on an insulating substrate, and a first interlayer insulating film made of a heat-resistant resin layer having a first connection window on a part of the first wiring layer. and a second interlayer insulating film made of a heat-resistant resin layer having a second connection window at the same position as the first connection window; a second wiring layer that is connected to the
It is formed thicker than the interlayer insulating film.
上述した構成では、第１層間絶縁膜の第１の接続窓内に
おける第２層間絶縁膜の厚さのばらつきを小さ（でき、
第２の接続窓の加工性を改善してエンチング残りを防止
する。In the above configuration, the variation in the thickness of the second interlayer insulating film within the first connection window of the first interlayer insulating film can be reduced.
The workability of the second connection window is improved to prevent etching residue.
次に、本発明を図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１実施例の断面図である。FIG. 1 is a sectional view of a first embodiment of the present invention.
絶縁基板ｌの表面には、公知の成膜技術、例えばスパッ
タリング法と、フォトエツチング技術により、第１の配
線層２が形成されている。A first wiring layer 2 is formed on the surface of the insulating substrate 1 using known film forming techniques such as sputtering and photoetching.
この絶縁基板１及び第１の配線層２上には、耐熱性樹脂
フェス（例えば粘度Ｌｏｐｓ、不揮発分不揮発分１ワ
ジノンを溶媒とする）を２０００ｒｐｍ ３０秒の条件
でスピン塗布した後、１３５°Ｃで２０分間のキュア処
理を行う。次いで、ポジ系フォトレジストをスピン塗布
し、さらに９０°Ｃ前後でのレジストヘークを行い、所
定のフォトマスクを介して露光を行った後、ポジ系レジ
スト現像液（例えば、東京応化製ＮＭＤ−３）により、
第１の接続窓３ａを形成する。なお、この時点において
、第１の接続窓３ａの部分での膜厚は２．８μｍであっ
た。続いて２００°ＣのＮ２中で３０分間の加熱硬化処
理を行って第１の接続窓３ａを有する耐熱性樹脂層から
なる第１層間絶縁膜３を形成する。On the insulating substrate 1 and the first wiring layer 2, a heat-resistant resin face (e.g., viscosity: LOPs, non-volatile content: 1 non-volatile content, using Vaginone as a solvent) was spin-coated at 2000 rpm for 30 seconds, and then heated to 135°C. Perform curing treatment for 20 minutes. Next, a positive photoresist is spin-coated, a resist hake is performed at around 90°C, and after exposure through a predetermined photomask, a positive resist developer (for example, Tokyo Ohka NMD-3) is applied. According to
A first connection window 3a is formed. Note that at this point, the film thickness at the first connection window 3a was 2.8 μm. Subsequently, heat curing treatment is performed for 30 minutes in N2 at 200° C. to form a first interlayer insulating film 3 made of a heat-resistant resin layer and having a first connection window 3a.
続いて、第１層間絶縁膜３の形成に用いた耐熱性樹脂ワ
ニスを１ｏ００ｒｐＨ１３０秒の条件でスピン塗布した
後、第１の接続窓３ａの形成と、同様のプロセスにより
第２の接続窓４ａの形成を行う。なお、この時点におい
て、第２の接続窓４ａの部分での膜厚は５，９μｍであ
り、第１の接続窓３ａの深さは、前述の加熱硬化処理に
よる第１層間絶縁膜３の硬化収縮の結果２．２μｍにな
っている。Subsequently, after spin-coating the heat-resistant resin varnish used for forming the first interlayer insulating film 3 at 1000 rpm for 130 seconds, the second connection window 4a is formed by the same process as the formation of the first connection window 3a. Perform formation. At this point, the film thickness at the second connection window 4a is 5.9 μm, and the depth of the first connection window 3a is determined by the hardening of the first interlayer insulating film 3 by the heat hardening process described above. As a result of shrinkage, it became 2.2 μm.
続いて、２００°ＣのＮ２中で３０分間の加熱硬化処理
を行って第２の接続窓４ａを有する耐熱性樹脂層からな
る第２層間絶縁膜４を形成する。Subsequently, a heat curing process is performed for 30 minutes in N2 at 200° C. to form a second interlayer insulating film 4 made of a heat-resistant resin layer and having a second connection window 4a.
更に３５０°ＣのＮ２中で６０分間の最終硬化処理を行
って、二重接続窓を有する二重積層構造の耐熱性樹脂層
からなる眉間絶縁膜を形成する。最終硬化処理後の眉間
絶縁膜の膜厚は６．０μｍであった。Further, a final curing treatment is performed for 60 minutes in N2 at 350° C. to form a glabellar insulating film made of a heat-resistant resin layer having a double-layered structure with double-connected windows. The film thickness of the glabellar insulating film after the final curing treatment was 6.0 μm.
その後、第１の配線層２の形成と同様のプロセスにより
第２の配線層５を形成し、二重接続窓を通して両配線層
２．５を相互に電気接続する。Thereafter, a second wiring layer 5 is formed by a process similar to that of forming the first wiring layer 2, and both wiring layers 2.5 are electrically connected to each other through the double connection window.
この構成によれば、第２層間絶縁膜４の膜厚を第１層間
絶縁膜３の膜厚よりも大きく形成しているので、第２の
接続窓４ａが設けられる部分での第２層間絶縁膜４の膜
厚のばらつきが少なくなる。According to this configuration, since the thickness of the second interlayer insulating film 4 is formed to be larger than the thickness of the first interlayer insulating film 3, the second interlayer insulating film 4 is formed to have a larger thickness than the first interlayer insulating film 3, so that the second interlayer insulating film 4 is formed to have a larger thickness than the first interlayer insulating film 3. Variations in the thickness of the film 4 are reduced.
同時に、第２の接続窓４ａを形成するための工程は必然
的に第１の接続窓３ａを形成するときよりも深くエツチ
ングする工程となり、第２の接続窓４ａの加工性のばら
つきが抑制でき、そのエツチング残りが防止できる。し
たがって、第１の配線層２と第２の配線層５の電気的接
続を安定なものにできる。At the same time, the process of forming the second connection window 4a is necessarily a process of etching deeper than the process of forming the first connection window 3a, making it possible to suppress variations in workability of the second connection window 4a. , the etching residue can be prevented. Therefore, the electrical connection between the first wiring layer 2 and the second wiring layer 5 can be made stable.
第２図は本発明の実施例２の断面図である。FIG. 2 is a sectional view of Example 2 of the present invention.
第１実施例と同様のプロセスにより、絶縁基板１上に第
１の配線層２が形成されており、更にその上に１００μ
ｍ径の第１の接続窓３ａを有する耐熱性樹脂層からなる
第１層間絶縁膜３が形成されている。A first wiring layer 2 is formed on an insulating substrate 1 by a process similar to that of the first embodiment, and a 100μ
A first interlayer insulating film 3 made of a heat-resistant resin layer having a first connection window 3a with a diameter of m is formed.
また、第１実施例と同様の条件で耐熱性樹脂ワニスをス
ピン塗布し、キュア処理を行った後、１００μｍ径の第
１の接続窓３ａの中央に、６０μｍ径の第２の接続窓４
ａを形成する。以後、第１実施例と同様のプロセスで二
重接続窓を有する二重積層構造の層間絶縁膜を形成する
。この上に第２の配線層５を形成する。Further, after spin coating and curing a heat-resistant resin varnish under the same conditions as in the first embodiment, a second connection window 4 with a diameter of 60 μm is placed in the center of the first connection window 3a with a diameter of 100 μm.
form a. Thereafter, an interlayer insulating film having a double laminated structure having double connection windows is formed using the same process as in the first embodiment. A second wiring layer 5 is formed on this.
この実施例では、第２の接続窓４ａの加工が、第１の接
続窓３ａの内側の平坦な部分でのみ行われるため、第２
の接続窓４ａの加工性のばらつきが更に少なくなる利点
がある。In this embodiment, since the second connection window 4a is processed only on the flat part inside the first connection window 3a, the second connection window 4a is
This has the advantage that variations in workability of the connection windows 4a are further reduced.
なお、前記各実施例では層間絶縁膜を構成する耐熱性樹
脂層の材料としてポリイミド樹脂を例に挙げているが、
本発明に用いられる樹脂材料は熱硬化性耐熱樹脂であれ
ば必ずしもポリイミドに限定されるものではなく、例え
ばポリアミド樹脂やオルガノシロキサン樹脂を適用する
こともできる。In each of the above embodiments, polyimide resin is used as an example of the material of the heat-resistant resin layer constituting the interlayer insulating film.
The resin material used in the present invention is not necessarily limited to polyimide as long as it is a thermosetting heat-resistant resin, and for example, polyamide resin or organosiloxane resin can also be used.
また、配線層数についても本発明は何ら限定するもので
はなく、３層以上の配線基板についても本発明の適用は
可能である。Further, the present invention is not limited in any way to the number of wiring layers, and the present invention can be applied to a wiring board having three or more layers.
〔発明の効果］
以上説明したように本発明は、第２層間絶縁膜の膜厚を
第１層間絶縁膜の膜厚よりも厚く形成しているので、第
１層間絶縁膜の第１の接続窓内における第２層間絶縁膜
の厚さのばらつきを小さくでき、第１の接続窓内におけ
る第２の接続窓の加工性を改善し、第２Ｎ間絶縁膜のエ
ンチング残りを防止して第１の配線層と第２の配線層の
間の電気的接続特性を改善できる効果がある。[Effects of the Invention] As explained above, in the present invention, since the second interlayer insulating film is formed thicker than the first interlayer insulating film, the first connection of the first interlayer insulating film is It is possible to reduce the variation in the thickness of the second interlayer insulating film within the window, improve the workability of the second connection window within the first connection window, and prevent the remaining etching of the second N interlayer insulating film. This has the effect of improving the electrical connection characteristics between the first wiring layer and the second wiring layer.
第１図は本発明の第１実施例の断面図、第２図は本発明
の第２実施例２断面図、第３図は従来の多層配し’Ａ基
板の断面図、第４図（ａ）及び（ｂ）は従来の不具合点
を説明するための工程断面図である。
１・・・絶縁基板、２・・・第１の配線層、３・・・第
１層間絶縁膜、３ａ・・・第１の接続窓、４・・・第２
層間絶縁膜、４ａ・・・第２の接続窓、５・・・第２の
配線層。
第１図
第２図FIG. 1 is a cross-sectional view of the first embodiment of the present invention, FIG. 2 is a cross-sectional view of the second embodiment of the present invention, FIG. (a) and (b) are process cross-sectional views for explaining conventional problems. DESCRIPTION OF SYMBOLS 1... Insulating substrate, 2... First wiring layer, 3... First interlayer insulating film, 3a... First connection window, 4... Second
Interlayer insulating film, 4a... second connection window, 5... second wiring layer. Figure 1 Figure 2
Claims (1)
配線層上の一部に第１の接続窓を有する耐熱性樹脂層か
らなる第１層間絶縁膜と、この第１層間絶縁膜上に形成
され、前記第１の接続窓と同じ位置に第２の接続窓を有
する耐熱性樹脂層からなる第２層間絶縁膜と、前記第１
及び第２の接続窓を通して前記第１の配線層に電気的に
接続される第２の配線層を有し、前記第２層間絶縁膜の
膜厚を第１層間絶縁膜の膜厚よりも厚く形成したことを
特徴とする多層配線基板。1. A first wiring layer formed on an insulating substrate, a first interlayer insulating film made of a heat-resistant resin layer having a first connection window on a portion of the first wiring layer, and the first interlayer insulating film. a second interlayer insulating film formed on the heat-resistant resin layer and having a second connection window at the same position as the first connection window;
and a second wiring layer electrically connected to the first wiring layer through a second connection window, the second interlayer insulating film being thicker than the first interlayer insulating film. A multilayer wiring board characterized by forming a multilayer wiring board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30305688A JPH02148888A (en) | 1988-11-30 | 1988-11-30 | Multilayer interconnection substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30305688A JPH02148888A (en) | 1988-11-30 | 1988-11-30 | Multilayer interconnection substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02148888A true JPH02148888A (en) | 1990-06-07 |
Family
ID=17916378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30305688A Pending JPH02148888A (en) | 1988-11-30 | 1988-11-30 | Multilayer interconnection substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02148888A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05343853A (en) * | 1992-06-09 | 1993-12-24 | Fujitsu Ltd | Formation through hole in multilayer insulating film |
-
1988
- 1988-11-30 JP JP30305688A patent/JPH02148888A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05343853A (en) * | 1992-06-09 | 1993-12-24 | Fujitsu Ltd | Formation through hole in multilayer insulating film |
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