JPH0213467B2 - - Google Patents
Info
- Publication number
- JPH0213467B2 JPH0213467B2 JP59015614A JP1561484A JPH0213467B2 JP H0213467 B2 JPH0213467 B2 JP H0213467B2 JP 59015614 A JP59015614 A JP 59015614A JP 1561484 A JP1561484 A JP 1561484A JP H0213467 B2 JPH0213467 B2 JP H0213467B2
- Authority
- JP
- Japan
- Prior art keywords
- tellurium
- lead
- pbte
- positive resist
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/471—Inorganic layers
- H01L21/473—Inorganic layers composed of oxides or glassy oxides or oxide based glass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1561484A JPS60160622A (ja) | 1984-01-31 | 1984-01-31 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1561484A JPS60160622A (ja) | 1984-01-31 | 1984-01-31 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60160622A JPS60160622A (ja) | 1985-08-22 |
| JPH0213467B2 true JPH0213467B2 (enExample) | 1990-04-04 |
Family
ID=11893579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1561484A Granted JPS60160622A (ja) | 1984-01-31 | 1984-01-31 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60160622A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2656860B2 (ja) * | 1990-12-25 | 1997-09-24 | 松下電子工業株式会社 | 半導体発光素子およびその製造方法 |
| DE69625384T2 (de) * | 1995-01-20 | 2003-04-17 | Matsushita Electric Industrial Co., Ltd. | Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5748287A (en) * | 1980-09-05 | 1982-03-19 | Fujitsu Ltd | Multi-factor semiconductor element |
-
1984
- 1984-01-31 JP JP1561484A patent/JPS60160622A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60160622A (ja) | 1985-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4358340A (en) | Submicron patterning without using submicron lithographic technique | |
| US4692997A (en) | Method for fabricating MOMOM tunnel emission transistor | |
| JP3053357B2 (ja) | 平面埋込型レーザダイオードの製造方法 | |
| JPH0213467B2 (enExample) | ||
| JPS609185A (ja) | 半導体レ−ザ集積回路装置 | |
| JPS63164477A (ja) | 自己整合ゲートを有する電界効果トランジスタの製造方法 | |
| JPS5694789A (en) | Manufacturing method of light semiconductor device | |
| JPH0511668B2 (enExample) | ||
| JP2004186499A (ja) | Iii・v族化合物半導体太陽電池およびその製造方法 | |
| JP2714642B2 (ja) | 半導体発光素子の製造方法 | |
| JPS6361793B2 (enExample) | ||
| JP3127574B2 (ja) | オーミック電極及びその形成方法 | |
| JPH0511432B2 (enExample) | ||
| JPS6051263B2 (ja) | 半導体装置の製造方法 | |
| JPH084180B2 (ja) | 半導体レ−ザ装置およびその製造方法 | |
| JPH0213943B2 (enExample) | ||
| JPH023314B2 (enExample) | ||
| JPS5911691A (ja) | 埋め込み構造を有する半導体素子の製造方法 | |
| JPH04293286A (ja) | 半導体レーザ素子の製造方法 | |
| JPS61137371A (ja) | 半導体装置の製造方法 | |
| JPS63127589A (ja) | 半導体素子の製造方法 | |
| JPH067622B2 (ja) | 半導体レ−ザ装置の製造方法 | |
| JPH01184958A (ja) | 半導体装置の製造方法 | |
| JPS62128589A (ja) | 半導体発光装置及びその製造方法 | |
| JPS6341228B2 (enExample) |