JPH023314B2 - - Google Patents

Info

Publication number
JPH023314B2
JPH023314B2 JP58152489A JP15248983A JPH023314B2 JP H023314 B2 JPH023314 B2 JP H023314B2 JP 58152489 A JP58152489 A JP 58152489A JP 15248983 A JP15248983 A JP 15248983A JP H023314 B2 JPH023314 B2 JP H023314B2
Authority
JP
Japan
Prior art keywords
laser
recess
layer
semi
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58152489A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6045082A (ja
Inventor
Hideaki Matsueda
Michiharu Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP15248983A priority Critical patent/JPS6045082A/ja
Publication of JPS6045082A publication Critical patent/JPS6045082A/ja
Publication of JPH023314B2 publication Critical patent/JPH023314B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP15248983A 1983-08-23 1983-08-23 半導体レ−ザ集積回路装置 Granted JPS6045082A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15248983A JPS6045082A (ja) 1983-08-23 1983-08-23 半導体レ−ザ集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15248983A JPS6045082A (ja) 1983-08-23 1983-08-23 半導体レ−ザ集積回路装置

Publications (2)

Publication Number Publication Date
JPS6045082A JPS6045082A (ja) 1985-03-11
JPH023314B2 true JPH023314B2 (enExample) 1990-01-23

Family

ID=15541588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15248983A Granted JPS6045082A (ja) 1983-08-23 1983-08-23 半導体レ−ザ集積回路装置

Country Status (1)

Country Link
JP (1) JPS6045082A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07120832B2 (ja) * 1986-08-12 1995-12-20 松下電器産業株式会社 半導体レ−ザ装置
JPS6457781A (en) * 1987-08-28 1989-03-06 Mitsubishi Electric Corp Planar type phase synchronous integrated optical element and manufacture thereof
US4940672A (en) * 1989-03-17 1990-07-10 Kopin Corporation Method of making monolithic integrated III-V type laser devices and silicon devices on silicon

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ELECTRONICS=1982 *

Also Published As

Publication number Publication date
JPS6045082A (ja) 1985-03-11

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