JPS60160622A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60160622A
JPS60160622A JP1561484A JP1561484A JPS60160622A JP S60160622 A JPS60160622 A JP S60160622A JP 1561484 A JP1561484 A JP 1561484A JP 1561484 A JP1561484 A JP 1561484A JP S60160622 A JPS60160622 A JP S60160622A
Authority
JP
Japan
Prior art keywords
tellurium
lead
selenium
resist
mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1561484A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0213467B2 (enExample
Inventor
Hirokazu Fukuda
福田　広和
Koji Shinohara
篠原　宏爾
Yoshito Nishijima
西嶋　由人
Koji Ebe
広治 江部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1561484A priority Critical patent/JPS60160622A/ja
Publication of JPS60160622A publication Critical patent/JPS60160622A/ja
Publication of JPH0213467B2 publication Critical patent/JPH0213467B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/471—Inorganic layers
    • H01L21/473—Inorganic layers composed of oxides or glassy oxides or oxide based glass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Formation Of Insulating Films (AREA)
JP1561484A 1984-01-31 1984-01-31 半導体装置の製造方法 Granted JPS60160622A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1561484A JPS60160622A (ja) 1984-01-31 1984-01-31 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1561484A JPS60160622A (ja) 1984-01-31 1984-01-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60160622A true JPS60160622A (ja) 1985-08-22
JPH0213467B2 JPH0213467B2 (enExample) 1990-04-04

Family

ID=11893579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1561484A Granted JPS60160622A (ja) 1984-01-31 1984-01-31 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60160622A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04223387A (ja) * 1990-12-25 1992-08-13 Matsushita Electron Corp 半導体発光素子およびその製造方法
EP0723322A3 (en) * 1995-01-20 1997-01-02 Matsushita Electric Industrial Co Ltd Semiconductor light emitting device and manufacturing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748287A (en) * 1980-09-05 1982-03-19 Fujitsu Ltd Multi-factor semiconductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748287A (en) * 1980-09-05 1982-03-19 Fujitsu Ltd Multi-factor semiconductor element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04223387A (ja) * 1990-12-25 1992-08-13 Matsushita Electron Corp 半導体発光素子およびその製造方法
EP0723322A3 (en) * 1995-01-20 1997-01-02 Matsushita Electric Industrial Co Ltd Semiconductor light emitting device and manufacturing method
US5822347A (en) * 1995-01-20 1998-10-13 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device and method for fabricating the same

Also Published As

Publication number Publication date
JPH0213467B2 (enExample) 1990-04-04

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