JPH02119172A - 半導体装置の製法 - Google Patents

半導体装置の製法

Info

Publication number
JPH02119172A
JPH02119172A JP1245104A JP24510489A JPH02119172A JP H02119172 A JPH02119172 A JP H02119172A JP 1245104 A JP1245104 A JP 1245104A JP 24510489 A JP24510489 A JP 24510489A JP H02119172 A JPH02119172 A JP H02119172A
Authority
JP
Japan
Prior art keywords
film
well region
conductivity type
region
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1245104A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0583194B2 (enrdf_load_stackoverflow
Inventor
Koichi Nagasawa
幸一 長沢
Satoshi Meguro
目黒　怜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1245104A priority Critical patent/JPH02119172A/ja
Publication of JPH02119172A publication Critical patent/JPH02119172A/ja
Publication of JPH0583194B2 publication Critical patent/JPH0583194B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP1245104A 1989-09-22 1989-09-22 半導体装置の製法 Granted JPH02119172A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1245104A JPH02119172A (ja) 1989-09-22 1989-09-22 半導体装置の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1245104A JPH02119172A (ja) 1989-09-22 1989-09-22 半導体装置の製法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2049680A Division JPS56118366A (en) 1980-02-22 1980-02-22 Preparation of semiconductor device

Publications (2)

Publication Number Publication Date
JPH02119172A true JPH02119172A (ja) 1990-05-07
JPH0583194B2 JPH0583194B2 (enrdf_load_stackoverflow) 1993-11-25

Family

ID=17128674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1245104A Granted JPH02119172A (ja) 1989-09-22 1989-09-22 半導体装置の製法

Country Status (1)

Country Link
JP (1) JPH02119172A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5520496A (en) * 1978-07-20 1980-02-13 Exxon Research Engineering Co Method and apparatus for testing set pressure of value

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5520496A (en) * 1978-07-20 1980-02-13 Exxon Research Engineering Co Method and apparatus for testing set pressure of value

Also Published As

Publication number Publication date
JPH0583194B2 (enrdf_load_stackoverflow) 1993-11-25

Similar Documents

Publication Publication Date Title
JP2510751B2 (ja) 単一集積回路チップ上に高電圧及び低電圧ｃｍｏｓトランジスタを形成するためのプロセス
JPS62174966A (ja) 半導体装置の製造方法
JP3181695B2 (ja) Ｓｏｉ基板を用いた半導体装置の製造方法
US4517731A (en) Double polysilicon process for fabricating CMOS integrated circuits
EP0274217A1 (en) Method of producing a semiconductor device
JPH05865B2 (enrdf_load_stackoverflow)
JPS6360549B2 (enrdf_load_stackoverflow)
JPS5843912B2 (ja) 半導体集積回路装置の製造方法
US5780347A (en) Method of forming polysilicon local interconnects
JPH098135A (ja) 半導体装置の製造方法
JPS6380560A (ja) 最小数のマスクを使用してバイポ−ラ及び相補型電界効果トランジスタを同時的に製造する方法
JP3257317B2 (ja) 半導体装置の製造方法
JPH02119172A (ja) 半導体装置の製法
JPH0738095A (ja) 半導体装置及びその製造方法
JPS62285468A (ja) Ｌｄｄ電界効果トランジスタの製造方法
JPS63119250A (ja) 半導体装置の製法
JP3380069B2 (ja) Ｍｏｓ半導体装置の製造方法
JPS5817656A (ja) 半導体装置の製造方法
JPH04260331A (ja) 半導体装置の製造方法
JPS61251165A (ja) Ｂｉ−ＭＩＳ集積回路の製造方法
JP3848782B2 (ja) 半導体装置の製造方法
JPS6046546B2 (ja) 半導体装置の製造方法
JPS59103377A (ja) 半導体装置の製造方法
JPH07142593A (ja) 半導体装置の製造方法
JPH04360539A (ja) 半導体装置の製造方法