JPH0211360U - - Google Patents

Info

Publication number
JPH0211360U
JPH0211360U JP1988089180U JP8918088U JPH0211360U JP H0211360 U JPH0211360 U JP H0211360U JP 1988089180 U JP1988089180 U JP 1988089180U JP 8918088 U JP8918088 U JP 8918088U JP H0211360 U JPH0211360 U JP H0211360U
Authority
JP
Japan
Prior art keywords
type
emitting diode
silicon carbide
type layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1988089180U
Other languages
English (en)
Other versions
JPH0644116Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988089180U priority Critical patent/JPH0644116Y2/ja
Publication of JPH0211360U publication Critical patent/JPH0211360U/ja
Application granted granted Critical
Publication of JPH0644116Y2 publication Critical patent/JPH0644116Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Description

【図面の簡単な説明】
第１図ａは本考案装置の一実施例を示す断面図
、第１図ｂは同図ａに用いる発光ダイオードの拡
大断面図、第２図は本考案装置の他の実施例を示
す断面図である。 １……ＳｉＣ発光ダイオード、２……ｎ型基板
、３……ｎ型層、４……ｐ型層、５……ｐ型オー
ミツク性電極、６……ｎ型オーミツク性電極、８
……ステム。

Claims (1)

    【実用新案登録請求の範囲】
  1. ｎ型炭化ケイ素基板の一主面上に炭化ケイ素の
    ｎ型層及びｐ型層がこの順序で積層され、上記ｎ
    型基板の他主面上及び上記ｐ型層上にそれぞれｎ
    型及びｐ型のオーミツク性電極が形成された炭化
    ケイ素発光ダイオードと、当該発光ダイオードを
    載置固着するステムと、を備え、上記ｎ型オーミ
    ツク性電極は上記ｎ型基板上で部分的に設けられ
    ていると共に、上記発光ダイオードはｐ型層側で
    上記ステムに固着されていることを特徴とする炭
    化ケイ素発光ダイオード装置。
JP1988089180U 1988-07-05 1988-07-05 炭化ケイ素発光ダイオード装置 Expired - Lifetime JPH0644116Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988089180U JPH0644116Y2 (ja) 1988-07-05 1988-07-05 炭化ケイ素発光ダイオード装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988089180U JPH0644116Y2 (ja) 1988-07-05 1988-07-05 炭化ケイ素発光ダイオード装置

Publications (2)

Publication Number Publication Date
JPH0211360U true JPH0211360U (ja) 1990-01-24
JPH0644116Y2 JPH0644116Y2 (ja) 1994-11-14

Family

ID=31313734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988089180U Expired - Lifetime JPH0644116Y2 (ja) 1988-07-05 1988-07-05 炭化ケイ素発光ダイオード装置

Country Status (1)

Country Link
JP (1) JPH0644116Y2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002336275A (ja) * 2001-05-17 2002-11-26 Yoshida Dental Mfg Co Ltd 歯科用光照射器
WO2007126074A1 (ja) * 2006-04-28 2007-11-08 Shimane Prefectural Government 半導体発光モジュール、装置、およびその製造方法
JPWO2014196285A1 (ja) * 2013-06-04 2017-02-23 富士電機株式会社 半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002336275A (ja) * 2001-05-17 2002-11-26 Yoshida Dental Mfg Co Ltd 歯科用光照射器
WO2007126074A1 (ja) * 2006-04-28 2007-11-08 Shimane Prefectural Government 半導体発光モジュール、装置、およびその製造方法
JP2009290238A (ja) * 2006-04-28 2009-12-10 Shimane Pref Gov 半導体発光モジュール、およびその製造方法
KR101136442B1 (ko) * 2006-04-28 2012-04-19 가부시키가이샤 시마네 덴시 이마후쿠 세이사쿠쇼 반도체 발광모듈, 장치 및 그 제조방법
JPWO2014196285A1 (ja) * 2013-06-04 2017-02-23 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
JPH0644116Y2 (ja) 1994-11-14

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