JPH0179857U - - Google Patents
Info
- Publication number
- JPH0179857U JPH0179857U JP1987175949U JP17594987U JPH0179857U JP H0179857 U JPH0179857 U JP H0179857U JP 1987175949 U JP1987175949 U JP 1987175949U JP 17594987 U JP17594987 U JP 17594987U JP H0179857 U JPH0179857 U JP H0179857U
- Authority
- JP
- Japan
- Prior art keywords
- solid
- imaging device
- state imaging
- conductive film
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Description
第１図は本考案の実施例に係る固体撮像素子の
構造を示す断面図、第２図は本考案の実施例に係
るＣＣＤ半導体チツプの上面図、第３図は従来例
の固体撮像素子の構造を示す断面図、第４図は従
来例の問題点を説明する図である。
符号の説明、１……Ｐ型Ｓｉ基板、２……ｎウ
エル、３……第１ポリＳｉ層、４……第２ポリＳ
ｉ層、５……絶縁膜、６……Ａｌ配線、７……ジ
ヤケツト膜、８……Ａｌ被覆膜、９……撮像部（
受光部）、１０……蓄積部、１１……Ａｌ被覆領
域。
FIG. 1 is a cross-sectional view showing the structure of a solid-state image sensor according to an embodiment of the present invention, FIG. 2 is a top view of a CCD semiconductor chip according to an embodiment of the present invention, and FIG. 3 is a diagram of a conventional solid-state image sensor. FIG. 4, a sectional view showing the structure, is a diagram illustrating problems in the conventional example. Explanation of symbols: 1... P-type Si substrate, 2... N-well, 3... First poly-Si layer, 4... Second poly-S
i layer, 5...insulating film, 6...Al wiring, 7...jacket film, 8...Al coating film, 9...imaging section (
(light receiving section), 10...accumulation section, 11...Al covering region.
Claims (1)
、該導電膜が定電位に固定されていることを特徴
とする固体撮像素子。 (2) 前記最上層の導電膜は固体撮像素子の受光
領域を除く領域に設けられていることを特徴とす
る実用新案登録請求の範囲第１項に記載の固体撮
像素子。[Claims for Utility Model Registration] (1) A solid-state imaging device characterized in that a conductive film is provided on the top layer of the solid-state imaging device, and the conductive film is fixed at a constant potential. (2) The solid-state imaging device according to claim 1, wherein the uppermost conductive film is provided in an area other than a light-receiving area of the solid-state imaging device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987175949U JPH0179857U (en) | 1987-11-18 | 1987-11-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987175949U JPH0179857U (en) | 1987-11-18 | 1987-11-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0179857U true JPH0179857U (en) | 1989-05-29 |
Family
ID=31467722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987175949U Pending JPH0179857U (en) | 1987-11-18 | 1987-11-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0179857U (en) |
-
1987
- 1987-11-18 JP JP1987175949U patent/JPH0179857U/ja active Pending
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