JPH0179857U - - Google Patents

Info

Publication number
JPH0179857U
JPH0179857U JP1987175949U JP17594987U JPH0179857U JP H0179857 U JPH0179857 U JP H0179857U JP 1987175949 U JP1987175949 U JP 1987175949U JP 17594987 U JP17594987 U JP 17594987U JP H0179857 U JPH0179857 U JP H0179857U
Authority
JP
Japan
Prior art keywords
solid
imaging device
state imaging
conductive film
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987175949U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987175949U priority Critical patent/JPH0179857U/ja
Publication of JPH0179857U publication Critical patent/JPH0179857U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の実施例に係る固体撮像素子の
構造を示す断面図、第2図は本考案の実施例に係
るCCD半導体チツプの上面図、第3図は従来例
の固体撮像素子の構造を示す断面図、第4図は従
来例の問題点を説明する図である。 符号の説明、1……P型Si基板、2……nウ
エル、3……第1ポリSi層、4……第2ポリS
i層、5……絶縁膜、6……Al配線、7……ジ
ヤケツト膜、8……Al被覆膜、9……撮像部(
受光部)、10……蓄積部、11……Al被覆領
域。
FIG. 1 is a cross-sectional view showing the structure of a solid-state image sensor according to an embodiment of the present invention, FIG. 2 is a top view of a CCD semiconductor chip according to an embodiment of the present invention, and FIG. 3 is a diagram of a conventional solid-state image sensor. FIG. 4, a sectional view showing the structure, is a diagram illustrating problems in the conventional example. Explanation of symbols: 1... P-type Si substrate, 2... N-well, 3... First poly-Si layer, 4... Second poly-S
i layer, 5...insulating film, 6...Al wiring, 7...jacket film, 8...Al coating film, 9...imaging section (
(light receiving section), 10...accumulation section, 11...Al covering region.

Claims (1)

【実用新案登録請求の範囲】 (1) 固体撮像素子の最上層に導電膜が設けられ
、該導電膜が定電位に固定されていることを特徴
とする固体撮像素子。 (2) 前記最上層の導電膜は固体撮像素子の受光
領域を除く領域に設けられていることを特徴とす
る実用新案登録請求の範囲第1項に記載の固体撮
像素子。
[Claims for Utility Model Registration] (1) A solid-state imaging device characterized in that a conductive film is provided on the top layer of the solid-state imaging device, and the conductive film is fixed at a constant potential. (2) The solid-state imaging device according to claim 1, wherein the uppermost conductive film is provided in an area other than a light-receiving area of the solid-state imaging device.
JP1987175949U 1987-11-18 1987-11-18 Pending JPH0179857U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987175949U JPH0179857U (en) 1987-11-18 1987-11-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987175949U JPH0179857U (en) 1987-11-18 1987-11-18

Publications (1)

Publication Number Publication Date
JPH0179857U true JPH0179857U (en) 1989-05-29

Family

ID=31467722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987175949U Pending JPH0179857U (en) 1987-11-18 1987-11-18

Country Status (1)

Country Link
JP (1) JPH0179857U (en)

Similar Documents

Publication Publication Date Title
JPH0179857U (en)
JPS6355450U (en)
JPS61162066U (en)
JPS6450453U (en)
JPH0444142U (en)
JPS5853159U (en) Amorphous semiconductor device
JPH0576770B2 (en)
JPS6411554U (en)
JPH0126230B2 (en)
JPH01125561U (en)
JPH0247064U (en)
JPH0316328U (en)
JPS6170949U (en)
JPH04752U (en)
JPS6389265U (en)
JPS61131857U (en)
JPS6280350U (en)
JPS5897850U (en) solid-state image sensor
JPH0371661U (en)
JPS6240852U (en)
JPS6450431U (en)
JPS6138935U (en) integrated circuit device
JPS6223459U (en)
JPS63134558U (en)
JPS6397247U (en)