JPS6355450U - - Google Patents

Info

Publication number
JPS6355450U
JPS6355450U JP14770386U JP14770386U JPS6355450U JP S6355450 U JPS6355450 U JP S6355450U JP 14770386 U JP14770386 U JP 14770386U JP 14770386 U JP14770386 U JP 14770386U JP S6355450 U JPS6355450 U JP S6355450U
Authority
JP
Japan
Prior art keywords
pyroelectric
group
elements
imaging device
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14770386U
Other languages
Japanese (ja)
Other versions
JPH051082Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14770386U priority Critical patent/JPH051082Y2/ja
Publication of JPS6355450U publication Critical patent/JPS6355450U/ja
Application granted granted Critical
Publication of JPH051082Y2 publication Critical patent/JPH051082Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の実施例を示す断面図、第3図
は従来例を示す断面図、第2図は第1図、第2図
の等価回路である。 13:焦電膜(例えばPZT)、14:上部電
極(例えばニクロム)、12:熱絶縁性導体(例
えばニクロムまたは白金ロジウム)、11:Al
配線層(1層目)、16:上部電極(Al配線層
2層目)。
FIG. 1 is a sectional view showing an embodiment of the present invention, FIG. 3 is a sectional view showing a conventional example, and FIG. 2 is an equivalent circuit of FIGS. 1 and 2. 13: Pyroelectric film (e.g. PZT), 14: Upper electrode (e.g. nichrome), 12: Thermally insulating conductor (e.g. nichrome or platinum rhodium), 11: Al
Wiring layer (first layer), 16: upper electrode (second Al wiring layer).

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体基板の主表面に光学情報を蓄積する容量
素子群、蓄積された信号電荷を転送する転送素子
群、および焦電素子により形成した光電変換素子
群を集積した固体撮像素子において、前記焦電性
光電変換素子の下部電極を熱絶縁性電極としたこ
とを特徴とする焦電型モノリシツク赤外線固体撮
像装置。
In a solid-state imaging device in which a group of capacitive elements that accumulate optical information on the main surface of a semiconductor substrate, a group of transfer elements that transfer accumulated signal charges, and a group of photoelectric conversion elements formed by pyroelectric elements are integrated, the pyroelectric A pyroelectric monolithic infrared solid-state imaging device characterized in that a lower electrode of a photoelectric conversion element is a thermally insulating electrode.
JP14770386U 1986-09-29 1986-09-29 Expired - Lifetime JPH051082Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14770386U JPH051082Y2 (en) 1986-09-29 1986-09-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14770386U JPH051082Y2 (en) 1986-09-29 1986-09-29

Publications (2)

Publication Number Publication Date
JPS6355450U true JPS6355450U (en) 1988-04-13
JPH051082Y2 JPH051082Y2 (en) 1993-01-12

Family

ID=31061306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14770386U Expired - Lifetime JPH051082Y2 (en) 1986-09-29 1986-09-29

Country Status (1)

Country Link
JP (1) JPH051082Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0559865U (en) * 1991-06-18 1993-08-06 川崎重工業株式会社 Pyroelectric sensor
JP2011179953A (en) * 2010-03-01 2011-09-15 Rohm Co Ltd Infrared sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0559865U (en) * 1991-06-18 1993-08-06 川崎重工業株式会社 Pyroelectric sensor
JP2011179953A (en) * 2010-03-01 2011-09-15 Rohm Co Ltd Infrared sensor

Also Published As

Publication number Publication date
JPH051082Y2 (en) 1993-01-12

Similar Documents

Publication Publication Date Title
JPS62101242U (en)
JPS6355450U (en)
JPH0179857U (en)
JPH0590553A (en) Infrared ray detector and manufacturing method thereof
JPS5892260A (en) Semiconductor device
JPH0444142U (en)
JPS6411554U (en)
JPH01125561U (en)
JPS6223459U (en)
JPS6389265U (en)
JPS62142859U (en)
JPH0217858U (en)
JPS60114470U (en) image sensor
JPH0448646U (en)
JPH01139459U (en)
JPS6418754U (en)
JPS5897850U (en) solid-state image sensor
JPS63174465U (en)
JPH04752U (en)
JPS63132455U (en)
JPS6370165U (en)
JPH0330445U (en)
JPS63175469A (en) Image sensor
JPH01123347U (en)
JPH03222483A (en) Infrared ray detecting element