JPS6280350U - - Google Patents
Info
- Publication number
- JPS6280350U JPS6280350U JP17191185U JP17191185U JPS6280350U JP S6280350 U JPS6280350 U JP S6280350U JP 17191185 U JP17191185 U JP 17191185U JP 17191185 U JP17191185 U JP 17191185U JP S6280350 U JPS6280350 U JP S6280350U
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric element
- area
- semiconductor substrate
- peripheral circuit
- charge transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
第１図は本考案を画素領域上に実施した場合の
一実施例を示す断面構造図、第２図は本考案を同
じく画素領域上に実施した場合の他の実施例を示
す断面構造図、第３図は本考案を周辺回路領域上
に実施した場合の一実施例を示す断面構造図であ
る。
１……Ｎ−半導体基板、２，３……Ｐ形ウエル
領域、４……ホト・ダイオードの直上領域、５，
６……アルミ金属膜、７……Ｎ形半導体層、８…
…ガードリング・ボロン層、９……シリコン絶縁
膜、１０……垂直転送電極、１１……絶縁保護膜
、１２……クロム金属膜、１３……モリブデン金
属膜、１４……タングステン金属膜。
FIG. 1 is a cross-sectional structural diagram showing one embodiment of the present invention implemented on a pixel region, FIG. 2 is a cross-sectional structural diagram showing another embodiment of the present invention implemented on a pixel region, FIG. 3 is a cross-sectional structural diagram showing an embodiment of the present invention implemented on a peripheral circuit area. 1... N-semiconductor substrate, 2, 3... P-type well region, 4... region directly above photodiode, 5,
6... Aluminum metal film, 7... N-type semiconductor layer, 8...
...Guard ring boron layer, 9...Silicon insulating film, 10...Vertical transfer electrode, 11...Insulating protective film, 12...Chromium metal film, 13...Molybdenum metal film, 14...Tungsten metal film.
Claims (1)
よび電荷転送素子をそれぞれ含んで形成される画
素領域および周辺回路領域と、前記画素領域の光
電素子を除く領域および周辺回路領域における前
記光電素子および電荷転送素子を含む領域を光学
的にそれぞれ遮蔽する２層金属膜からなる遮光層
とを備えることを特徴とする固体撮像装置。 a semiconductor substrate, a pixel area and a peripheral circuit area formed on the semiconductor substrate including a photoelectric element and a charge transfer element, respectively, and an area of the pixel area excluding the photoelectric element and the photoelectric element and charge transfer in the peripheral circuit area. A solid-state imaging device comprising: a light-shielding layer made of a two-layer metal film that optically shields regions including elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17191185U JPS6280350U (en) | 1985-11-08 | 1985-11-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17191185U JPS6280350U (en) | 1985-11-08 | 1985-11-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6280350U true JPS6280350U (en) | 1987-05-22 |
Family
ID=31107975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17191185U Pending JPS6280350U (en) | 1985-11-08 | 1985-11-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6280350U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6413734U (en) * | 1987-07-16 | 1989-01-24 | ||
| JPH039564A (en) * | 1989-06-07 | 1991-01-17 | Matsushita Electron Corp | Solid-state image sensing device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5836078A (en) * | 1981-08-26 | 1983-03-02 | Nec Corp | Solid-state image pickup device |
| JPS5866470A (en) * | 1981-10-16 | 1983-04-20 | Nec Corp | Solid-state image pickup device |
-
1985
- 1985-11-08 JP JP17191185U patent/JPS6280350U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5836078A (en) * | 1981-08-26 | 1983-03-02 | Nec Corp | Solid-state image pickup device |
| JPS5866470A (en) * | 1981-10-16 | 1983-04-20 | Nec Corp | Solid-state image pickup device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6413734U (en) * | 1987-07-16 | 1989-01-24 | ||
| JPH039564A (en) * | 1989-06-07 | 1991-01-17 | Matsushita Electron Corp | Solid-state image sensing device |
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