JPH01738A - Heat treatment method for semiconductor wafers - Google Patents
Heat treatment method for semiconductor wafersInfo
- Publication number
- JPH01738A JPH01738A JP63-121704A JP12170488A JPH01738A JP H01738 A JPH01738 A JP H01738A JP 12170488 A JP12170488 A JP 12170488A JP H01738 A JPH01738 A JP H01738A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- heat treatment
- foreign matter
- wafer
- baking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000000034 method Methods 0.000 title claims description 8
- 235000012431 wafers Nutrition 0.000 title description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 239000007789 gas Substances 0.000 description 13
- 238000012545 processing Methods 0.000 description 13
- 238000009423 ventilation Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000011045 prefiltration Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は半導体ウェーハの熱処理方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for heat treatment of semiconductor wafers.
[従来技術]
半導体装置の製造工程のひとつにエツチング加工がある
が、このエツチング加工を行なうためには例えばシリコ
ンウェーハ等の半導体ウェーハ表面にホトレジスト膜を
形成し、これを写真処理する必要がある。このホトレジ
スト膜の形成に際しては、溶剤を用いて液状化したホト
レジストをウェーハ上にホトレジスト膜として塗布した
後、この膜の感光特性の向上と現象処理特性の向上或は
エツチング処理特性の向上のためにホトレジスト膜を加
熱処理していわゆる改質を行なっている。この改質には
、溶剤の除去、接着性の強化、耐エツチング性の向上等
をも含んでいる。[Prior Art] Etching is one of the manufacturing processes for semiconductor devices, and in order to perform this etching, it is necessary to form a photoresist film on the surface of a semiconductor wafer, such as a silicon wafer, and then photoprocess this. In forming this photoresist film, after coating the wafer with a photoresist liquefied using a solvent as a photoresist film, the photoresist is coated on the wafer in order to improve the photosensitivity, phenomenon processing characteristics, or etching processing characteristics of this film. The photoresist film is heat-treated to perform so-called modification. This modification also includes removing solvents, strengthening adhesion, and improving etching resistance.
この種の改質を行なう手段としては、赤外線ベーク装置
、熱風循環ベーク装置、誘電加熱ベーク装置等の熱処理
装置や、真空ベーク装置が使用されているが、生産性や
自動化の点で前者のものが有利である。Heat treatment equipment such as infrared baking equipment, hot air circulation baking equipment, dielectric heating baking equipment, etc., and vacuum baking equipment are used as means for performing this type of reforming, but the former is preferred in terms of productivity and automation. is advantageous.
[発明が解決しようとする課題]
従来の熱処理では、ホトレジスト膜を処理装置内で露呈
した状態でベータ作用を行なっているため、装置内に存
在する異物(塵埃等)がホトレジスト膜上に付着し易い
という欠点がある。このような異物がホトレジスト膜に
付着すると、感光工程において異物により光が遮断され
て異物下のホトレジスト膜が感光されなくなる。この結
果、ウェーハ上に所要の半導体素子パターンが得られな
くなり、特に配線部分に異物が付着すると切断されると
いう不具合が生ずる。[Problems to be Solved by the Invention] In conventional heat treatment, the beta effect is performed with the photoresist film exposed in the processing equipment, so foreign matter (dust, etc.) present in the equipment may adhere to the photoresist film. It has the disadvantage of being easy. If such foreign matter adheres to the photoresist film, the light will be blocked by the foreign matter during the exposure process, and the photoresist film under the foreign matter will not be exposed. As a result, a desired semiconductor element pattern cannot be obtained on the wafer, and in particular, if foreign matter adheres to the wiring portion, the wafer may be cut.
したがって、従来ではホj・レジスト膜の熱処理工程後
に外観検査を行なうことが必須のものとされ、実際この
検査においてがなりの不良品が発見されて製品の歩留り
を低下させていると共に、製造工程における工数低減の
障害になっている。Therefore, in the past, it was considered essential to conduct a visual inspection after the heat treatment process of the photoresist film, and in fact, defective products were discovered during this inspection, lowering the product yield, and causing problems in the manufacturing process. This has become an obstacle to reducing man-hours.
このため、本発明者等が異物の発生(付着)原因につい
て究明したところ、熱処理装置内において被膜を形成し
た物体を搬送するための原動部から発生した異物や、物
体を装置外がら装置内に搬入するときに浸入する外気に
含まれている異物がその殆んどを占めることが判明した
。For this reason, the present inventors investigated the cause of the generation (adhesion) of foreign matter and found that foreign matter was generated from the driving part for transporting the object on which the coating was formed inside the heat treatment equipment, and that objects were not allowed to enter the equipment from outside the equipment. It was found that most of the foreign matter was contained in the outside air that entered during transport.
したがって1本発明の目的は半導体ウェーハに形成した
ホトレジ被膜への異物の付着を防止して歩留りの良好な
熱処理を行なうことができる熱処理を提供することにあ
る。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a heat treatment that can prevent foreign matter from adhering to a photoresist film formed on a semiconductor wafer and can provide a high yield.
[課題を解決するための手段]
本発明はこの究明結果に基づいて原動部の異物を処理室
外に追い出すと共に、処理室内に外気が浸入しないよう
に構成したものである。[Means for Solving the Problems] Based on the results of this investigation, the present invention is configured to expel foreign matter from the driving unit to the outside of the processing chamber and to prevent outside air from entering the processing chamber.
[実施例コ
第1図及び第2図は本発明の方法に適用される赤外線ベ
ーク装置の正面断面図及び側面断面図を示す。[Embodiment] Figures 1 and 2 show a front sectional view and a side sectional view of an infrared baking device applied to the method of the present invention.
図において、1は装置本体であり、その内部には背面よ
りの位置に隔壁2を立設して背面側部位に循環室3を画
成し、これには不活性ガス源(図示せず)に接続するガ
ス供給管4を開口連設している。前記隔壁2の正面側に
は上下に夫々メツシュプレート5,6を配設し、上から
順に換気室7゜ベータ室(処理室)8.排気室9を画成
している。In the figure, reference numeral 1 denotes the main body of the apparatus, inside which a partition wall 2 is erected at a position closer to the rear side to define a circulation chamber 3 on the rear side, which includes an inert gas source (not shown). A gas supply pipe 4 connected to the gas supply pipe 4 is open and continuous. On the front side of the partition wall 2, mesh plates 5 and 6 are arranged on the upper and lower sides, respectively, and from the top, there are a ventilation chamber 7, a beta chamber (processing chamber) 8. An exhaust chamber 9 is defined.
そして、前記隔壁2の上下部位には通孔10,11を形
成すると共に送気ファン12.排気ファン13を内装し
、図示矢印のように循環室3→換気室7→ベーク室8→
排気室9→循環室3の経路でガスが循環するようにして
いる。前記循環室8と換気室7を連通する通孔10部位
にはプレフィルタ14を配し、換気室7とベーク室8と
の間にはメインフィルタ15を配設している。In addition, through holes 10 and 11 are formed in the upper and lower parts of the partition wall 2, and an air supply fan 12. An exhaust fan 13 is installed inside, and as shown in the arrow, the circulation chamber 3→ventilation chamber 7→bake chamber 8→
The gas is circulated along the route from the exhaust chamber 9 to the circulation chamber 3. A pre-filter 14 is disposed at a portion of the through hole 10 that communicates the circulation chamber 8 and the ventilation chamber 7, and a main filter 15 is disposed between the ventilation chamber 7 and the bake chamber 8.
一方、前記ベーク室8内の下方部位には1両側方向にわ
たってベルトコンベヤを駆動部とする搬送手段16を配
設し、ウェーハ17を第1図の左から右へ搬送する。前
記本体1の左右にはローダ部18.アンローダ部19を
配置し、ローダ部18のウェーハ17を本体側壁1aの
搬入口20を通して搬送手段16に移載し、また搬送手
段16上のウェーハ17を本体側plaの搬出口21を
通してアンローダ部に移載する。更に前記ベーク室8内
の上部には3木の赤外線ランプ22を前記搬送手段16
と平行番4設け、搬送手段16により搬送されるウェー
ハを加熱することができる。28は反射板である。On the other hand, in the lower part of the baking chamber 8, a conveying means 16 having a belt conveyor as a driving unit is disposed extending along both sides, and conveys the wafer 17 from left to right in FIG. A loader section 18 is provided on the left and right sides of the main body 1. The unloader section 19 is arranged, and the wafers 17 in the loader section 18 are transferred to the transfer means 16 through the carry-in port 20 of the main body side wall 1a, and the wafers 17 on the transfer means 16 are transferred to the unloader section through the carry-out port 21 of the main body side pla. Transfer. Furthermore, three infrared lamps 22 are installed in the upper part of the baking chamber 8 to connect the conveying means 16.
A number 4 is provided in parallel with the wafer, and the wafer transported by the transport means 16 can be heated. 28 is a reflecting plate.
[発明の効果コ
以上の構成によれば、ガス供給管4から循環室8内に供
給された不活性ガスは、プレフィルタ14を通して換気
室7に入り、更にメインフィルタ15を通して清浄化さ
れてベーク室8に通流される。ベータ室8ではメツシュ
プレート5の作用によりガス流は下方向へ向けて通流さ
れ、いわゆるダウンフローとされる。そして、ここでは
搬送手段16の駆動部から発生される異物を流れに乗せ
て下方へ移動させ、メツシュプレート6を通して排気室
9へ通流され、更に再び循環室3への通流される。この
ガスは再び前述と同様の経路で循環されることになり、
プレフィルタ14.メインフィルタ15にて夫々清浄化
されながらベーク室8内に通流されてベーク室8内の異
物を除去することになる。[Effects of the Invention] According to the above configuration, the inert gas supplied from the gas supply pipe 4 into the circulation chamber 8 enters the ventilation chamber 7 through the pre-filter 14, and is further purified through the main filter 15 and baked. The current flows into chamber 8. In the beta chamber 8, the gas flow is directed downward by the action of the mesh plate 5, resulting in a so-called downflow. Here, the foreign matter generated by the driving part of the conveyance means 16 is carried by the flow and moved downward, passed through the mesh plate 6 to the exhaust chamber 9, and then passed back to the circulation chamber 3. This gas will be circulated again through the same route as above,
Prefilter 14. They are each cleaned by the main filter 15 and flowed into the baking chamber 8 to remove foreign matter in the baking chamber 8.
一方、ウェーハ17はローダ部18から搬入口2oを通
してベーク室8内に供給され、搬送手段16にて搬送さ
れながら赤外線ランプ22の輻射熱、及びベーク室内の
昇温ガス熱により加熱(べ一り)され、加熱処理後は搬
出口22からアンローダ部19に搬出される。そして、
このとき前記ガスの通流量を調節してベーク室8内を陽
圧(外気に対して)保持することにより、ウェーハの搬
入、搬出に際しても外気が搬入口20や搬出口21から
ベーク室8内に浸入することはなく、したがって、外気
に含まれる異物が浸入することもない。なお、このベー
ク室8内の圧力は前記ガス供給管4からの供給ガス流量
や送気ファン12の回転速度等により調節できる。On the other hand, the wafer 17 is supplied into the bake chamber 8 from the loader section 18 through the loading port 2o, and is heated (baked) by the radiant heat of the infrared lamp 22 and the heat of the heated gas in the bake chamber while being transferred by the transfer means 16. After the heat treatment, it is carried out from the carrying out port 22 to the unloader section 19. and,
At this time, by adjusting the flow rate of the gas to maintain a positive pressure (relative to the outside air) inside the bake chamber 8, even when loading and unloading wafers, outside air enters the bake chamber 8 through the loading port 20 and the loading port 21. Therefore, no foreign matter contained in the outside air can enter. The pressure inside the baking chamber 8 can be adjusted by adjusting the flow rate of the gas supplied from the gas supply pipe 4, the rotational speed of the air supply fan 12, and the like.
以上のことにより、ベーク室8内では搬送手段の駆動部
から発生する異物は取除かれ、外気に含まれる異物は外
気と共に浸入が防止されるので、ウェーハ17表面に形
成したホトレジスト膜に異物が付着することを防止して
、製品の歩留りを向上することができる。As a result of the above, foreign matter generated from the drive unit of the transport means is removed in the bake chamber 8, and foreign matter contained in the outside air is prevented from entering together with the outside air, so that the foreign matter is not exposed to the photoresist film formed on the surface of the wafer 17. It is possible to prevent adhesion and improve product yield.
[変形例コ
第3図乃至第5図には本発明に適用される夫々異なる他
の加熱装置の実施例を示す。なお、これらの図において
前記実施例と同一部分には同一符号を付して説明は省略
する。[Modifications] Figs. 3 to 5 show other different embodiments of heating devices applicable to the present invention. In these figures, the same parts as those in the embodiment described above are designated by the same reference numerals, and the explanation thereof will be omitted.
第3図は熱風循環方式として構成したもので。Figure 3 shows the configuration as a hot air circulation system.
前例の赤外線ランプ22に代えて循環室8の両側壁にヒ
ータ24を配設し、ガスが循環室8を通流するときに加
熱してこれをベーク室8に通風し。In place of the infrared lamps 22 in the previous example, heaters 24 are disposed on both side walls of the circulation chamber 8 to heat the gas as it flows through the circulation chamber 8 and ventilate it into the baking chamber 8.
ウェーハ17を加熱するようにしたものである。The wafer 17 is heated.
ガス供給管4は循環室3の下部に接続している。The gas supply pipe 4 is connected to the lower part of the circulation chamber 3.
第4図はプレートヒート方式として4+3成したもので
、搬送手段16としてのベルトコンベア内にヒータ25
を内装し、その上を搬送されるウェーハを至近距離から
加熱するようにしたものである。Figure 4 shows a 4+3 plate heating system, in which a heater 25 is installed inside the belt conveyor serving as the conveying means 16.
The wafer is heated from a close distance while the wafer is transported on top of the wafer.
第5図は誘電加熱(マイクロ波加熱加熱)方式として構
成したもので、換気室7内にマグネトロン26を配置し
、ベーク室8内にマイクロ波を放射してウェーハ17を
誘電加熱したものである。FIG. 5 shows a dielectric heating (microwave heating) system configuration in which a magnetron 26 is placed in the ventilation chamber 7 and microwaves are radiated into the baking chamber 8 to dielectrically heat the wafer 17. .
以上、各実施例は夫々加熱方式は相違するが、不活性ガ
スをベーク室内にダウンスローさせる点及びベーク室内
を陽圧にする点は前例と同じであり、前例と同様に異物
の付着を防止できることは言うまでもない。As mentioned above, each example has a different heating method, but it is the same as the previous example in that the inert gas is thrown down into the baking chamber and the inside pressure is positive, and the adhesion of foreign matter is prevented as in the previous example. It goes without saying that it can be done.
ここで、本発明に適用される加熱装置は処理空間を有し
、かつ処理室間の清浄度を必要とする装置であれば他の
装置に応用することも可能であり、例えばホトレジスト
プリベーク炉、ホトレジストポストベーク炉、自動塗布
ベーク装置、自動現像ベーク装置に応用できる。Here, the heating device applied to the present invention can be applied to other devices as long as it has a processing space and requires cleanliness between processing chambers, such as a photoresist pre-bake furnace, It can be applied to photoresist post-bake ovens, automatic coating and baking equipment, and automatic developing and baking equipment.
以上のように本発明によれば、処理室内にガスをダウン
フローさせ、特に処理室内を陽圧にしているので、処理
室内部の駆動部等から発生する異物や外気に含まれる異
物が処理物体に付着することを防止でき、製品の歩留り
を向上することができる。As described above, according to the present invention, the gas is caused to flow down into the processing chamber, and the pressure inside the processing chamber is particularly positive, so that foreign matter generated from the drive unit inside the processing chamber or foreign matter contained in the outside air is removed from the processing chamber. It is possible to prevent the product from adhering to the product and improve the yield of the product.
第1図及び第2図は本発明の方法に適用される加熱装置
の一実施例の正面断面図、第3図乃至第5図は本発明に
適用される夫々異なる他の加熱装置の実施例の側面断面
図である。
1・・・装置本体、3・・・循環室、5,6・・・メツ
シュプレート、7・・・換気室、8・・・処理室(ベー
ク室)、9・・・排気室、12・・・送気ファン、13
・・・排気ファン、14・・・プレフィルタ、15・・
・メインフィルタ、16・・・搬送手段、17・・・ウ
ェーハ、18・・・ローダ部、19・・・アンローダ部
、22・・・赤外線ランプ、24・・・ヒータ、25・
・・ヒータ、26・・・マグネトロン。
第 1 図
第 2 図
第 4 図
第 5 図FIGS. 1 and 2 are front sectional views of one embodiment of a heating device applied to the method of the present invention, and FIGS. 3 to 5 are examples of other different heating devices applied to the present invention. FIG. 1... Apparatus main body, 3... Circulation chamber, 5, 6... Mesh plate, 7... Ventilation room, 8... Processing chamber (bake room), 9... Exhaust chamber, 12 ...Air fan, 13
...Exhaust fan, 14...Pre-filter, 15...
- Main filter, 16... Transfer means, 17... Wafer, 18... Loader section, 19... Unloader section, 22... Infrared lamp, 24... Heater, 25...
... Heater, 26... Magnetron. Figure 1 Figure 2 Figure 4 Figure 5
Claims (1)
段階と、その半導体ウェーハを清浄ガスがダウンフロー
状態に通流し得る熱処理室内に搬送し、加熱する段階と
より成ることを特徴とする半導体ウェーハの熱処理方法
。1. A semiconductor wafer characterized by comprising the steps of applying photoresist on one main surface of the semiconductor wafer, and transporting the semiconductor wafer into a heat treatment chamber through which a clean gas can flow in a downflow state, and heating the semiconductor wafer. Heat treatment method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12170488A JPS64738A (en) | 1988-05-20 | 1988-05-20 | Heat treatment of semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12170488A JPS64738A (en) | 1988-05-20 | 1988-05-20 | Heat treatment of semiconductor wafer |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11019880A Division JPS5735319A (en) | 1980-08-13 | 1980-08-13 | Heat treatment device |
Publications (3)
Publication Number | Publication Date |
---|---|
JPH01738A true JPH01738A (en) | 1989-01-05 |
JPS64738A JPS64738A (en) | 1989-01-05 |
JPH0424855B2 JPH0424855B2 (en) | 1992-04-28 |
Family
ID=14817815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12170488A Granted JPS64738A (en) | 1988-05-20 | 1988-05-20 | Heat treatment of semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS64738A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4672538B2 (en) * | 2005-12-06 | 2011-04-20 | 東京エレクトロン株式会社 | Heat treatment device |
WO2012141081A1 (en) * | 2011-04-14 | 2012-10-18 | シャープ株式会社 | Apparatus for producing display panel substrate |
DE102012017230A1 (en) * | 2012-08-31 | 2014-03-06 | Oerlikon Trading Ag, Trübbach | Plant for the radiation treatment of substrates |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4895638A (en) * | 1972-03-21 | 1973-12-07 | ||
JPS5148969U (en) * | 1974-10-11 | 1976-04-13 | ||
JPS5151432A (en) * | 1974-10-31 | 1976-05-07 | Shigeru Soeda | Mikikara jukonoshozeshimeruhoho |
JPS51124839A (en) * | 1975-04-25 | 1976-10-30 | Hitachi Ltd | Infrared ray baking furnace |
JPS5549183Y2 (en) * | 1975-07-25 | 1980-11-17 | ||
JPS5925372B2 (en) * | 1976-02-27 | 1984-06-16 | 株式会社日立製作所 | Baking equipment |
JPS5320867A (en) * | 1976-08-11 | 1978-02-25 | Hitachi Ltd | Housing and conveying machine of articles |
JPS5427770A (en) * | 1977-08-04 | 1979-03-02 | Takasago Thermal Engineering | Constant temperature clean bench |
JPS54158445A (en) * | 1978-06-05 | 1979-12-14 | Mitsubishi Electric Corp | Sintering of photosensitive resin |
JPS5595332A (en) * | 1979-01-12 | 1980-07-19 | Toshiba Corp | Dust removing system for conveyor |
-
1988
- 1988-05-20 JP JP12170488A patent/JPS64738A/en active Granted
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4542577B2 (en) | Normal pressure drying apparatus, substrate processing apparatus, and substrate processing method | |
EP0810633A2 (en) | Coating film forming method and apparatus | |
KR970007496A (en) | Resist processing apparatus and resist processing method | |
JP2001176792A (en) | Lithography system in semiconductor manufacturing | |
JP2008160011A (en) | Substrate treating equipment | |
JP3402713B2 (en) | Heat treatment equipment | |
JPH0313735B2 (en) | ||
JPH01738A (en) | Heat treatment method for semiconductor wafers | |
JP3959141B2 (en) | Heat treatment equipment with sublimation countermeasures | |
JPH0424855B2 (en) | ||
JP2008159768A (en) | Baking apparatus, and substrate treating apparatus | |
KR101237126B1 (en) | Substrate processing apparatus | |
JPH08254392A (en) | Method and apparatus for heat treatment of substrate | |
JP2929260B2 (en) | Method and apparatus for forming coating film | |
JP2000208053A (en) | Baking furnace for plasma display panel | |
JP3504822B2 (en) | Substrate processing apparatus and substrate processing exposure apparatus | |
JP2002195762A (en) | Heat treatment apparatus | |
JP3456925B2 (en) | Substrate processing equipment | |
JP2003137574A (en) | System for heat treatment for glass | |
JP3373413B2 (en) | Heat treatment equipment for uniformly heating flat workpieces by changing the wind speed | |
JPH04200861A (en) | Reflow apparatus | |
JP4219447B2 (en) | Development processing apparatus and development processing method | |
JPH07235468A (en) | Resist coater | |
JP2931992B2 (en) | Heat treatment equipment | |
JPH064186B2 (en) | Reflow soldering equipment |