KR101237126B1 - Substrate processing apparatus - Google Patents

Abstract

An object of the present invention is to realize or achieve improvement in throughput or tact, reduction in HMDS consumption, simplicity in device configuration, cost reduction, and particle elimination in the coalescence treatment.

This thermal processing part 26 provides the flat stream conveyance path 32 in the horizontal direction (X direction) parallel to the process line A, and dewatering bake unit DHP in order from the upstream along this conveyance path 32 in order. (38), coalescing unit (AD) 40 and cooling unit (COL) 42 are provided. The coalescence unit (AD) 40 has a long HMDS nozzle 98 installed near the unit inlet and a substrate G on the conveyance path 32 from a position near the lower end of the nozzle 98 to a position near the unit outlet. ) And an upper cover 100 extending with a predetermined gap, and a lower cover 102 extending below the conveyance path 32 facing the HMDS nozzle 98 and the upper cover 100.

Substrate Processing Unit, Plate Flow Carrier, Cohesion Unit, Dewatering Bake Unit, HMDS Nozzle

Description

[0001] SUBSTRATE PROCESSING APPARATUS [0002]

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing the configuration of an applicable coating and developing treatment system of the present invention.

2 is a flowchart showing a processing procedure in the coating and developing processing system.

Fig. 3 is a side view showing the overall configuration in a thermal processing unit including the coalescing unit in the embodiment.

4 is a cross-sectional view showing a configuration example of a crack heat sink used in the embodiment.

5 is a diagram showing a heat radiation (heating) temperature distribution in a conveyance direction in the dewatering bake unit of the embodiment.

Fig. 6 is a diagram showing the rise characteristic of the substrate temperature in the dehydration bake unit of the embodiment.

7 is a plan view showing the configuration of a flat stream conveyance path in an embodiment;

Fig. 8 is a diagram showing the configuration of one modification of the HMDS nozzle in the embodiment.

FIG. 9 is a diagram illustrating a configuration of one modification of the dewatering bake unit in the embodiment. FIG.

<Explanation of symbols for the main parts of the drawings>

10: coating and developing treatment system

24: cleaning process unit

26: first thermal processing unit

32: the first flat accompaniment

36: scrubber cleaning unit (SCR)

38: Dewatering Bake Unit (DHP)

40: coalescing unit (AD)

42: cooling unit (COL)

80: rotor

84, 84a, 84b, 84c: upper crack spinneret

86, 86a, 86b, 86c: bottom crack spinneret

98: HMDS Nozzle

100: top cover

102: lower cover

104: HMDS gas generator

110: upper exhaust port

112, 122: exhaust device

118: bottom crack spin plate

120: lower exhaust port

126: upper primary cooling nozzle

128: lower primary cooling nozzle

130: secondary cooling nozzle

136: thermostat

[Document 1] Japanese Patent Laid-Open No. 10-135307 (Fig. 6 and its description)

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus which performs an adhesion process on a substrate to be treated in order to enhance adhesion of a resist in photolithography.

In photolithography of FPD (flat panel display) manufacturing or semiconductor device manufacturing, in order to improve the adhesion of the resist film to a substrate to be treated (glass substrate, semiconductor wafer, etc.), the substrate features are made of HMDS (hexamethyldisilazane). A coalescence treatment technique for hydrophobic lithography has been used. Usually, an adhesion process is performed after washing a board | substrate before a resist application | coating.

The conventional coalescence processing apparatus employ | adopts the structure of what is called a hotplate oven, for example, as shown in patent document 1, loads a board | substrate on a hotplate, covers it from the top, forms a chamber, and is inside a chamber. The steam type HMDS is introduced to apply the HMDS to the surface of the substrate. This type of processing apparatus includes a lift pin mechanism that lifts and lowers a substrate by raising and lowering a plurality of lift pins from a through hole of a hot plate for exchanging a substrate with an external transfer robot, or covering or opening a cover on a hot plate upwards. The cover opening / closing mechanism is provided. Or the thing of the type which fixes an upper cover and provides the board | substrate carrying out outlet in one side wall is provided with the gate mechanism for opening and closing the said board | substrate carrying in outlet.

[Patent Document 1] Japanese Patent Application Laid-open No. Hei 10-135307 (Fig. 6 and its description)

However, in the conventional adhesion processing apparatus, there is a problem that the time required for carrying in and out of the substrate is large, and the throughput is low. That is, when one adhesion process is completed by a single type, the lid opening / closing mechanism or the gate mechanism opens the lid or the gate, while the lift pin mechanism raises the lift pin to lift the substrate above the hot plate. Immediately after, an external transfer robot receives the processed substrate from the lift pins and instead transfers a new unprocessed substrate to the lift pins. Immediately after this new substrate is loaded onto the lift pins, the lift pin mechanism causes the lift pins to lower and moves the substrate onto the hot plate, and the lid opening / closing mechanism or gate mechanism closes the lid or gate after the transfer robot is evacuated. This series of board | substrate carrying out / loading operation | movement requires time (for example, about tens of seconds). In addition, when the cover or gate is opened, the atmosphere in the chamber changes, and the temperature of the hot plate decreases, and after the cover or gate is closed, the atmosphere or the temperature of the hot plate in the chamber recovers to the reference state or the reference value. For example, it takes about 10 seconds). Therefore, when the tact time of one device is 60 seconds, for example, about half (about 30 seconds) is consumed for the above-mentioned board carrying-out, recovery of atmosphere, etc. For this reason, when the tact time of the whole system is shorter than the tact time of one apparatus, several coalescence processing apparatuses are operated in parallel by a fixed time difference. In that case, several HMDS supply systems are needed according to the number of coalescence processing apparatuses.

In addition, in the hot plate oven, it is difficult to evenly apply the HMDS to the entire surface of the substrate (the surface to be treated), and the processing time is limited by the portion having the lowest coating efficiency (for example, the substrate edge). As a result, the efficiency of HMDS was low, and the consumption of HMDS was high.

In addition, particles are inevitably generated from a mechanical drive system such as a lift pin mechanism, a lid opening mechanism, or a gate mechanism. The substrate subjected to the adhesion treatment is after the cleaning treatment, and when particles are attached, there is a high possibility of causing defects in the resist coating in the later process or the resist pattern or circuit pattern in the final result.

SUMMARY OF THE INVENTION The present invention has been made in view of the problems of the prior art as described above, and it is possible to realize or achieve improvement in throughput or tact, reduction of HMDS consumption, simplified device configuration, cost reduction, and particle elimination in the adhesion process. It is an object to provide a device.

In order to achieve the above object, the substrate processing apparatus of the present invention is provided with a conveying path formed by providing a conveying body for conveying a substrate to be processed in a forwardly looking posture in a predetermined horizontal conveyance direction, and on the conveying path. A conveyance drive part which drives the said conveyance body for conveying the said board | substrate, and the coalescence process part which blows out HMDS gas in a 1st section toward the to-be-processed surface of the said board | substrate which moves on the said conveyance path.

In the above configuration, the HMDS gas is blown out on the surface to be processed (upper surface) of the substrate which is in a posture of being folded back by the adhesion processing unit while the substrate passes through the first section on the conveying path, and the substrate exits the first section. Becomes hydrophobized by HMDS. Since the adhesion process is performed during conveyance by the apparatus structure which does not require a conveyance robot, a gate mechanism, etc., the improvement of a throughput and a tact is easy, and generation | occurrence | production of a particle can be avoided. In addition, when the HMDS gas is blown out to the substrate in one of the first sections (for example, near the upstream end), the HMDS is supplied to the entire surface of the substrate to be treated by the scanning of the substrate without waste due to the movement of the substrate. It is also possible to improve the use efficiency.

According to one suitable aspect of the present invention, an HMDS nozzle in which the coalescence processing unit injects HMDS gas downward from the upper part of the transport path near the upstream end of the first section, and the downstream end of the first section from a position near the lower end of the MDS nozzle. It has a top cover extended with a conveyance path and predetermined gap (preferably 10 mm or less) to the position near. In this case, the HMDS nozzle is preferably an elongated nozzle extending in a direction crossing the conveying path, and has a shower plate for discharging the HMDS gas into a uniform laminar flow, or a discharge port of a slit type or fine hole line type. It is also preferable to have a configuration. Further, it is preferable that a first exhaust port is provided at the downstream end of the upper cover, and the first exhaust mechanism discharges the gas in the upper cover via the first exhaust port.

In such a configuration, when the substrate passes through the HMDS nozzle, the HMDS gas discharged from the HMDS nozzle flows through the gap space between the upper cover and the substrate downstream (toward the first exhaust port), and each of the upper surfaces (surfaces to be processed) of the substrate. The part is placed under the atmosphere of HMDS gas at all times in the movement section (adhesion treatment section) from the HMDS nozzle to the first exhaust port. Thereby, the efficiency and quality of coalescence process can be improved further. In addition, since the gap space is formed to narrow the atmosphere of the HMDS gas as much as possible, the amount of the HMDS gas used is further reduced, and the HMDS gas consumption can be drastically reduced.

Moreover, according to one suitable form, the adhesion cover is provided with the 2nd cover which extends below the conveyance path facing the HMDS nozzle and / or the top cover. In this case, it is preferable that a second exhaust port is provided in the lower cover, and the second exhaust mechanism discharges the gas in the upper cover via the second exhaust port. It is also preferable that the upper cover and the lower cover are connected by side walls extending in the vertical direction on both sides of the conveying path.

According to this configuration, the HMDS gas flowing out of the substrate in the first section or the adhesion treatment section can be collected in the lower cover to safely and efficiently discharge or recover.

Moreover, according to one suitable form, the heater for heating the board | substrate which moves a conveyance path in a 1st section from below from an adhesion process part is provided. The temperature of the substrate subjected to the adhesion treatment can be stably and reliably maintained at the set treatment temperature while moving on the transport path by heating of this heater.

Moreover, the board | substrate processing apparatus of this invention is a suitable form, and has a heating part which heats the board | substrate which moves a conveyance path to the 1st set temperature in the 2nd section set by the upstream side of a 1st section in a conveyance direction. In this case, the first set temperature may coincide with or approximate the set temperature for coalescence processing. Moreover, as a structure of a heating part, it is preferable to have a heat radiator which radiates heat uniformly uniformly from at least one of upper and lower directions toward the board | substrate on a conveyance path, and is predetermined toward the board | substrate on a conveyance path in the vicinity of the upstream end of a 2nd section. It is also preferable to have a warm air nozzle which injects warm air of temperature. In the structure which arrange | positions a heat sink along a conveyance path, the heat radiation temperature of a heat sink is selected as the 1st temperature corresponding to a 1st set temperature in the vicinity of the downstream end of a 2nd section, and is made in the vicinity of an upstream end of a 2nd section. It is preferable that it is selected to the 2nd temperature higher than 1 temperature, and according to the heating system which reaches a desired preset temperature, decreasing heating temperature stepwise according to the position of a conveyance direction in this way, the temperature of a board | substrate is heated from room temperature for a short time. It can raise to processing temperature smoothly.

Moreover, the board | substrate processing apparatus of this invention is an appropriate form, Comprising: The board | substrate which moves a conveyance path in the 3rd section set by the downstream side of a 1st section in a conveyance direction is cooled to the 2nd set temperature lower than a 1st temperature. It has a cooling unit. In this case, as a structure of a cooling part, it is preferable to have one or some cooling gas nozzle which makes the cooling gas flow contact at least one of upper and lower sides toward the board | substrate on a conveyance path. More preferably, the cooling gas nozzle located most downstream among the cooling gas nozzles may eject the cooling gas flow which was temperature-controlled to 2nd set temperature. According to such a structure, the temperature of a board | substrate can be efficiently returned from the comparatively high temperature for heat processing to the reference temperature near normal temperature, while the board | substrate moves on the same conveyance path immediately after an adhesion process.

In addition, in this invention, the attitude | position which the back of the board | substrate which takes on the conveyance path and sees up is a position which raises the to-be-processed surface of a board | substrate upward, and includes not only a horizontal attitude | position but also the attitude | position which inclines in arbitrary directions.

Fig. 1 shows a coating and developing treatment system as one configuration example to which the substrate processing apparatus of the present invention can be applied. This coating and developing processing system 10 is installed in a clear room, for example, using a glass substrate for LCD as a substrate to be treated, and cleaning, resist coating, prebaking, developing and postbaking during a photolithography process in an LCD manufacturing process. And a series of processes. An exposure process is performed by the external exposure apparatus 12 provided adjacent to this system.

This coating and developing processing system 10 arranges a horizontally long process station (P / S) 16 at the center, and has a cassette station (C / S) 14 and an interface station at both ends thereof in the longitudinal direction (X direction). (I / F) 18 is disposed.

The cassette station (C / S) 14 is a cassette loading / exporting port of the system 10. The cassettes C / S 14 are stacked in multiple stages so that a plurality of cassettes C can be accommodated in one horizontal direction (Y direction). It comprises a cassette stage 20 which can be stacked up to a stack, and a conveyance mechanism 22 for feeding out and out of the substrate G with respect to the cassette C on the stage 20. The conveyance mechanism 22 has the means which can hold | maintain the board | substrate G, for example, the conveyance arm 22a, is operable by four axes of X, Y, Z, and (theta), and is adjacent to the process station P / S (16) side and the board | substrate G are exchangeable.

The process station (P / S) 16 places each processing unit in the order of process flow or process in a pair of parallel and reverse lines A and B extending in the horizontal system longitudinal direction (X direction) and have.

More specifically, the cleaning process unit 24 and the first thermal processing unit 26 are provided in the process line A of the upstream portion from the cassette station (C / S) 14 side to the interface station (I / F) 18 side. ), The coating process part 28 and the 2nd thermal processing part 30 are arrange | positioned in a line. Here, the cleaning process part 24 has provided the excimer UV irradiation unit (e-UV) 34 and the scrubber washing | cleaning unit (SCR) 36 sequentially from the upstream along the 1st horizontal flow conveyance path 32. As shown in FIG. The first thermal processing unit 26 sequentially moves the dewatering bake unit (DHP) 38, the coalescing unit (AD) 40, and the cooling unit (COL) 42 from the upstream side along the first flat flow conveying path 32. I install it. The coating process unit 28 includes a resist coating unit (CT) 44 and a reduced pressure drying unit (VD) 46, and between the first flat stream conveying path 32 and the resist coating unit (CT) 44, A conveyance mechanism for transferring the substrate G in the direction of the process line A between both units 44 and 46 and between the reduced pressure drying unit (VD) 46 and the second planar conveying path 48 described later ( Not shown). The second thermal processing unit 30 is provided with a prebaking unit (PREBAKE) 50 and a cooling unit (COL) 52 in order from the upstream side along the second horizontal flow conveying path 48.

On the other hand, in the downstream process line B from the interface station (I / F) 18 side to the cassette station (C / S) 14 side, a developing unit (DEV) 54 and an i-ray UV irradiation unit ( i-UV) 56, post-baking unit (POBAKE) 58, cooling unit (COL) 60, and inspection unit (AP) 62 are arranged in a line. These units 54, 56, 58, 60 and 62 are provided in this order from the upstream side along the 3rd horizontal flow conveyance path 64. As shown in FIG. In addition, the postbaking unit (POBAKE) 58 and the cooling unit (COL) 60 constitute a third thermal processing unit 59.

The auxiliary conveyance space 66 is provided between both process lines A and B, and the process line direction X is provided by the drive mechanism which is not shown by the shuttle 68 which can load the board | substrate G horizontally by one unit. Direction) in both directions.

The interface station (I / F) 18 includes a conveying device 70 for exchanging the second and third planar conveying paths 48 and 64 and the substrate G, and an adjacent exposure device 12. And a conveying device 72 for exchanging the substrate G, and the buffer stage (BUF) 74, the extension cooling stage (EXT COL) 76, and the peripheral device 78 are arranged around them. Doing. In the buffer stage (BUF) 74, a stationary buffer cassette (not shown) is placed. The extension cooling stage (EXT-COL) 76 is a substrate exchange stage with a cooling function, and is used when exchanging the substrate G between the transfer devices 70 and 72. Peripheral apparatus 78 may be the structure which laminated | stacked the titler TITLER and the peripheral exposure apparatus EE up and down, for example. Each conveying apparatus 70 and 72 has the conveying arms 70a and 72a which can hold | maintain the board | substrate G, and can access each adjacent part for the exchange of the board | substrate G. As shown in FIG.

Fig. 2 shows the procedure of the processing for one substrate G in this coating and developing processing system. First, in the cassette station (C / S) 14, the conveyance mechanism 22 takes out one board | substrate G from any cassette C on the stage 20, and removes the board | substrate ( G) is leaned back toward the carry-in part on the process line A side of the process station (P / S) 16, that is, the first flat flow conveying path 32, and looks upward (the surface to be processed on the substrate is placed upward). Carry out to step S1).

In this way, the board | substrate G is conveyed toward the downstream side of the process line A in the attitude | position which leans back on the 1st horizontal flow conveyance path 32, and looks upward. In the first stage cleaning process section 24, the substrate G is subjected to an ultraviolet cleaning process and a scrubbing cleaning process in turn by an excimer UV irradiation unit (e-UV) 34 and a scrubber cleaning unit (SCR) 36. (Steps S2, S3). In the scrubber cleaning unit (SCR) 36, brushing cleaning or blow cleaning is performed on the substrate G moving on the flat stream conveyance path 32 to remove particulate contamination from the surface of the substrate, followed by a rinse treatment. In the end, the substrate G is dried using an air knife or the like. When a series of cleaning processes in the scrubber cleaning unit (SCR) 36 are complete | finished, the board | substrate G will go down the 1st planar conveyance path 32 as it is, and will pass through the 1st thermal processing part 26. FIG.

In the first thermal processing unit 26, the substrate G is first subjected to a dehydration process of heating in the dehydration bake unit (DHP) 38 to remove moisture (step S4). Subsequently, the substrate G is subjected to an adhesion process using a vapor-type HMDS in the adhesion unit AD 40 so that the surface to be treated is hydrophobic (step S5). After completion of this adhesion process, the substrate G is cooled to a predetermined substrate temperature in the cooling unit (COL) 42 (step S6). Then, the board | substrate G is transmitted to the conveyance mechanism in the application | coating process part 28 from the end point (discharge part) of the 1st flat stream conveyance path 32. As shown in FIG.

In the coating process section 28, the substrate G is first applied to the upper surface of the substrate (to-be-processed surface) by the slit nozzle by, for example, the spin coating method in the resist coating unit (CT) 44. It is apply | coated and immediately receives the drying process by pressure reduction in the pressure reduction drying unit (VD) 46 of the downstream side (step S7). Subsequently, the substrate G is transferred to the starting point (loading portion) of the second flat stream conveyance path 48 by the transfer mechanism in the coating process portion 28. The board | substrate G is also conveyed to the downstream side of the process line A in the posture looking up on the 2nd horizontal flow conveyance path 48, and passes through the 2nd thermal processing part 30. FIG.

In the second thermal processing unit 30, the substrate G is first subjected to prebaking as a heat treatment after applying a resist or a heat treatment before exposure in the prebaking unit PREBAKE 50 (step S8). By this prebaking, the solvent remaining in the resist film on the substrate G is removed by evaporation, and the adhesion of the resist film to the substrate is also enhanced. Next, the substrate G is cooled to a predetermined substrate temperature in the cooling unit (COL) 52 (step S9). Subsequently, the board | substrate G is taken out by the conveying apparatus 70 of the interface station (I / F) 18 from the end point (discharge part) of the 2nd horizontal flow conveyance path 48. As shown in FIG.

In the interface station (I / F) 18, the substrate G is carried from the extension cooling stage (EXT COL) 76 to the peripheral exposure apparatus EE of the peripheral device 78, where the substrate ( After receiving the exposure for removing the resist attached to the periphery of G) at the time of development, it is transferred to the next exposure apparatus 12 (step S10).

In the exposure apparatus 12, a predetermined circuit pattern is exposed to the resist on the substrate G. Subsequently, when the substrate G, which has finished the pattern exposure, is returned to the interface station (I / F) 18 from the exposure apparatus 12 (step S10), first, the substrate G is carried into the titler TITLER of the peripheral apparatus 78. The predetermined information is recorded there on the predetermined part on the substrate (step S11). Thereafter, the substrate G is returned to the extension cooling stage (EXT COL) 76. The conveyance of the board | substrate G in the interface station (I / F) 18, and the exchange of the board | substrate G with the exposure apparatus 12 are performed by the conveying apparatus 70,72. Finally, the board | substrate G moves from the conveying apparatus 70 to the viewpoint (loading part) of the 3rd flat stream conveyance path 64 provided in the process line B side of the process station (P / S) 16. FIG. It is brought in.

In this way, the board | substrate G is conveyed toward the downstream side of the process line B in the attitude which this time flips back on the 3rd planar conveyance path 64, and looks upward. In the first developing unit (DEV) 54, a series of developing processes of developing, rinsing, and drying are performed while the substrate G is flown in a flat stream (step S12).

The board | substrate G which completed the series of image development processes in the image development unit (DEV) 54 is the i-line irradiation unit (i-UV) 56 of the downstream side in the state loaded on the 3rd flat stream conveyance path 64 as it is. ) And undergo a decolorization process by i-ray irradiation therein (step S13). Even after that, the board | substrate G passes through the 3rd thermal processing part 59 and the inspection unit (AP) 62 in order in the state mounted on the 3rd planar conveyance path 64. As shown in FIG. In the third thermal processing unit 59, the substrate G is first subjected to post-baking as a heat treatment after the development treatment in the post-baking unit POBAKE 58 (step S14). By this post-baking, the developer or cleaning solution remaining in the resist film on the substrate G is removed by evaporation to enhance the adhesion of the resist pattern to the substrate. Next, the substrate G is cooled to a predetermined substrate temperature in the cooling unit (COL) 60 (step S15). In the inspection unit (AP) 62, non-contact line width inspection, film quality, and film thickness inspection are performed on the resist pattern on the substrate G (step S16).

On the cassette station (C / S) 14 side, the conveyance mechanism 22 receives the board | substrate G which completed the whole process of application | coating development process from the end point (export part) of the 3rd flat stream conveyance path 64, and receives it. One board | substrate G is accommodated in the cassette C of any one (normally basic) (step S1).

In this application | coating development system 10, this invention can be applied to the 1st thermal processing part 26 containing the coalescence unit (AD) 40 provided in the 1st flat stream conveyance path 32. As shown in FIG.

3-9, the structure and operation | movement of the thermal processing part 26 in one Embodiment of this invention are demonstrated in detail.

3 shows a configuration of main parts of the thermal processing unit 26 in the present embodiment. The thermal processing part 26 is provided with the flat flow conveyance path 32 in the horizontal direction (X direction) parallel to a process line A, and dehydration bake unit DHP is sequentially performed from the upstream along this conveyance path 32. As shown in FIG. (38), coalescing unit (AD) 40 and cooling unit (COL) 42 are provided.

The conveyance path 32 consists of installing the rotor 80 for conveying the board | substrate G back in the attitude | position which looks upward, at regular intervals in a conveyance direction (X direction), and the washing | cleaning process part 24 of an upstream side ) Is drawn into the thermal processing unit 26 as an extension from the (). Each rotor 80 is connected to the conveyance drive part (not shown) which has the said motor through the transmission mechanisms, such as a gearwheel mechanism and a belt mechanism, for example.

The dewatering bake unit (DHP) 38 is a heat dissipating body that radiates heat uniformly from above and below toward the substrate G on the flat flow conveying path 32 in the unit housing 85, and the conveying path 32. Thus, a plurality of upper crack plate heaters 84 (84a, 84b, 84c) and lower crack plate heaters 86 (86a, 86b, 86c) are provided above and below, respectively. Here, the lower crack plate heaters 86 (86a, 86b, 86c) are disposed in the space between the rotors 80, 80 adjacent to each other.

Each of the crack plate heaters 84 and 86 is, for example, a heat sink 88 made of aluminum and an SUS thin film attached to the rear surface or the rear surface of the heat sink 88 via the insulating film 90. The heater 92 is comprised. The distance interval or gap of the board | substrate G on the conveyance path 32 and each crack plate heater 84 and 86 is set to 5-10 mm, for example.

Among the upper crack plate heaters 84a, 84b, 84c and the lower crack plate heaters 86a, 86b, 86c, the heat radiation temperature TA of the crack plate heaters 84a, 86a disposed at the inlet side, that is, the position of the most upstream side. Is set to a temperature (e.g., 130 deg. C) higher than the heat dissipation temperature Ts (e.g., 100 deg. C) of the subsequent crack plate heaters 84b and 86b and 84c and 86c. As shown, a stepwise heat dissipation (heating) temperature distribution is formed along the conveying direction. Here, the heat radiation temperature Ts on the downstream side coincides with or corresponds to the temperature of the substrate for adhesion at the rear end. When the substrate G enters the dehydration bake unit (DHP) 38 at a substrate temperature of room temperature, the heat dissipation temperature distribution (Fig. 5) in the conveying direction as described above in this unit causes the flat flow as shown in Fig. 6. During conveyance, the substrate temperature is rapidly increased to the set value Ts for the adhesion treatment. In addition, the virtual line (dotted-dotted line) T 'in FIG. 6 shows the characteristic of the board | substrate temperature rise at the time of making the heat dissipation temperature distribution of a conveyance direction constant in the dehydration baking unit (DHP) 38. In addition, in FIG. As such, the method of moving the substrate in a heating space having a predetermined heat dissipation temperature distribution is shorter than the method of changing the temperature of an ambient temperature or a heat transfer member (for example, a hot plate) in time by placing the substrate in a certain place. Time delay allows variable control of substrate temperature.

At the inlet of the dehydration bake unit (DHP) 38, a predetermined temperature (for example, from the upper side and the lower side toward the substrate G on the conveyance path 32 coming in from the scrubber cleaning unit (SCR) 36 next to the upstream side) Longer upper and lower warm air nozzles 94 and 96 for ejecting warm air of about 100 to 130 캜 are also provided.

The coalescence unit (AD) 40 has a long HMDS nozzle 98 installed near the unit inlet and a substrate G on the conveyance path 32 from a position near the lower end of the nozzle 98 to a position near the unit outlet. Top cover 100 extending with a predetermined gap (e.g., 5 to 10 mm), and extending down the conveying path 32 facing these HMDS nozzles 98 and top cover 100. It has a lower cover 102 to be.

The HMDS nozzle 98 introduces a vapor type HMDS, that is, HMDS gas M, from the HMDS gas generating unit 104 via the gas supply pipe 106, and introduces the introduced HMDS gas M into the shower plate 108 in the nozzle. Through a uniform laminar flow. The size of the discharge port of the HMDS nozzle 98 is selected by the dimension (for example, 100 cm or more) which covers the board | substrate G in the width direction (Y direction) of the conveyance path 32, and the conveyance path 32 In the longitudinal direction, that is, the conveyance direction (X direction), it may be selected with a dimension significantly shorter than the substrate G (for example, 5 to 15 cm).

In addition, although not shown, the HMDS gas generating unit 104 includes a tank for storing an HMDS solution and a nitrogen gas supply unit for supplying nitrogen gas as a carrier gas to a bubbler provided at the bottom of the HMDS tank. HMDS is vaporized and infiltrated into the bubble of nitrogen gas generated from the bubbler, and vaporized HMDS (HMDS gas) is generated.

The downstream end part of the upper cover 100 is provided with the slit type upper exhaust port 110 extended in the width direction (Y direction) of the conveyance path 32. As shown in FIG. This upper exhaust port 110 passes through an exhaust pipe 114 to an exhaust device 112 having an exhaust pump or an exhaust fan.

The lower cover 102 has a shape of an open container of an upper surface, and a plurality of lower crack plate heaters 118 are disposed to be accommodated in a space between the rotors 80 and 80 adjacent to each other. These lower crack plate heaters 118 may have the same structure as the crack plate heaters 84 and 86 in the dehydration bake unit (DHP) 38, and are directed toward the substrate G on the conveyance path 32. The heat is radiated almost uniformly from below. These lower crack plate heaters 118 are for maintaining the temperature of the board | substrate G in the adhesion process at fixed temperature Ts, and the heat dissipation temperature distribution of a conveyance direction (X direction) may be constant.

At the center of the lower cover 102, a circular or slit lower exhaust port 120 extending in the width direction (Y direction) of the conveying path 32 is provided. The lower exhaust port 120 passes through an exhaust pipe 124 to an exhaust device 122 having an exhaust pump or an exhaust fan. In addition, although illustration is abbreviate | omitted, the upper end part of the upper cover 100 and the lower cover 102 is connected through the side wall extended in the vertical direction on both left and right sides of the conveyance path 32. As shown in FIG.

The cooling unit (COL) 42 includes a plurality of upper and lower primary cooling gas nozzles 126 and 128 arranged at a predetermined interval from the vicinity of the unit inlet along the conveying path 32, respectively, and secondary cooling disposed at a rear end thereof. It has a gas nozzle 130. The primary cooling gas nozzles 126 and 128 are elongate nozzles having a slit discharge port extending in the width direction (Y direction) of the conveying path 32, and are located at room temperature toward the substrate G on the conveying path 32. It is configured to blow out the high pressure air.

The secondary cooling gas nozzle 130 introduces a high-pressure air temperature regulated to a predetermined temperature or a reference temperature for cooling from the compressed air source 132 via the gas supply pipe 134 and the temperature controller 136, and introduces the introduced cooling reference. The high pressure air of the temperature is blown out in a uniform laminar flow through the shower plate 138 inside the nozzle. The size of the discharge port of the secondary cooling gas nozzle 130 is selected by the dimension (for example, 100 cm or more) which covers the board | substrate G in the width direction (Y direction) of the conveyance path 32, and conveys flat flow. In the longitudinal direction of the furnace 32, that is, in the conveyance direction (X direction), it may be selected to a dimension shorter than the substrate G (for example, 20 to 40 cm).

The thermal processing unit 26 separates the space on the side of the dehydration bake unit (DHP) 38 and the coalescence unit (AD) 40 from the space on the side of the cooling unit (COL) 42 in the integral housing 140. The partition wall 142 extended in the vertical direction is provided. The partition 142 is provided with an opening 144 through which the transport path 32 passes, and the spaces on both sides communicate with each other via the opening 144.

In a room on the side of the dehydration bake unit (DHP) 38 and the coalescence unit (AD) 40, a fan 146 for drawing outdoor air and an air filter for damping the air flow from the fan 146 ( 148 provides clean air from the ceiling to the downflow. Moreover, the exhaust port 150 is provided in the bottom, and this exhaust port 150 passes through the exhaust pipe 152 through the exhaust apparatus 154 with a built-in exhaust pump or exhaust fan. As a result, the gas leaked from the dehydration bake unit (DHP) 38 and the coalescing unit (AD) 40 is wound up in the clean air of the downflow from the ceiling to be discharged to the outside from the exhaust port 150 at the bottom. have.

In addition, on the cooling unit (COL) 42 side, downflow clean air is supplied to the room from the fan 156 and the air filter 158 provided in the ceiling. Then, the pressure in the room is kept higher than the pressure in the room, that is, the pressure in the room on the dehydration bake unit (DHP) 38 and the coalescing unit (AD) 40 side. Air flows from the right side to the left side of the opening 144. That is, even if HMDS gas leaks from the coalescence unit (AD) 40, it does not enter into the cooling unit (COL) 42.

FIG. 7 shows the configuration of the conveying path 32 as seen from above at the location of the dehydration bake unit (DHP) 38 and the coalescence unit (AD) 40. Each rotor 80 has a shaft of a rigid body (for example, made of SUS) having a constant thickness (diameter), and a cylindrical roller portion 80a for mounting the left and right ends of the substrate G on both ends of the shaft is provided. In addition, a plurality of cylindrical or ring roller portions 80b are placed in the intermediate portion of the substrate G in the shaft intermediate portion. Both ends of each rotor 80 are rotatably supported in a horizontal position by a pair of left and right bearings 162 fixed to the frame 160.

The conveyance drive part 164 has the electric motor 166 and the transmission mechanism for transmitting the rotational driving force of this electric motor 166 to each rotor 80. The electric drive mechanism includes a rotary drive shaft 170 extending in the conveying direction (X direction) connected to the rotary shaft of the electric motor 166 via an endless belt 168, the rotary drive shaft 170 and each rotor ( It consists of a cross-axis gear 172 to operatively engage 80.

3 again, in the scrubber cleaning unit (SCR) 36, air knife 174 and 176 for liquid interruption are arrange | positioned in the upper and lower sides of the conveyance path 32 near the exit. In addition, near the boundary between the scrubber cleaning unit (SCR) 36 and the thermal processing unit 26, a proximity switch or a position sensor 178 for detecting the timing at which the substrate G enters into the thermal processing unit 26 is provided. . The output signal of this position sensor 178 is sent to the controller (not shown) which controls the operation of each part and the whole in the thermal processing part 26. As shown in FIG.

The downstream side of the cooling unit (COL) 42 is the end point (discharge part) of the conveyance path 32, and although not shown in figure, the board | substrate G is moved upward from the conveyance path 32 in a horizontal posture state there. Lift pin lifting mechanism for lifting and unloading is provided.

Next, the operation of the whole and each part in this thermal processing part 26 is demonstrated.

In the scrubber cleaning unit (SCR) 36, the substrate G is subjected to scrubbing cleaning, blow cleaning, and rinse cleaning in order while moving the substrate G on the conveying path 32 on the downstream side by the rotor conveyance at a constant speed. The drying air blows from the air knives 174 and 176 to remove the liquid from the substrate surface. Subsequently, the substrate G is an ultrashort unit of the thermal processing unit 26, that is, a dehydration bake unit, at a substrate temperature of approximately room temperature from the scrubber cleaning unit (SCR) 36 as it is in the rotor conveyance on the flat flow conveying path 32. DHP) 38.

When entering the dehydration bake unit (DHP) 38, the substrate G is exposed to the warm air from the warm air nozzles 94 and 96 at its inlet. By the warm air blow, the droplets remaining on the surface of the substrate G are evaporated or scattered, and the substrate temperature also increases. Moreover, this warm air blow also has the function of what is called an air curtain, and is made to block | block the outside air of the unit housing 85, especially room temperature air from the scrubber washing | cleaning unit (SCR) 36 side.

In the dewatering bake unit (DHP) 38, the substrate G immediately passes the hot air nozzles 94 and 96, and the upper crack plate heaters 84 (84a, 84b and 84c) and the lower crack plate heaters 86 ( Radiant heat from 86a, 86b, 86c). As described above, since the crack plate heaters 84a and 86a disposed at the inlet side, that is, the position of the most upstream side, heat at a temperature T _A higher than the reference value Ts, the temperature of the substrate G rises rapidly. When the substrate G is pulled out of the dehydration bake unit (DHP) 38, the substrate G is at a set temperature Ts suitable for the adhesion treatment. By the heat treatment (dehydration baking) in the dehydration bake unit (DHP) 38, the water on the surface of the substrate G is almost completely removed. When the substrate conveyance speed is set to, for example, 30 mm / sec, and the heating section of the dewatering bake unit (DHP) 38 is set to, for example, 900 mm, the heating time is 30 seconds.

When the substrate G exits the dehydration bake unit (DHP) 38 and enters the downstream side coalescing unit (AD) 40, the HMDS gas (M) having a constant concentration from the upper HMDS nozzle 98 near its inlet. ) Is blown hard. When the substrate G passes the HMDS nozzle 98, the HMDS gas M discharged from the HMDS nozzle 98 causes the gap space between the upper cover 100 and the substrate G to flow downstream toward the upper exhaust port 110. Since it flows, each part of the upper surface (to-be-processed surface) of the board | substrate G is put in the atmosphere of the HMDS gas M at all times in the movement section (adhesion process section) from the HMDS nozzle 98 to the upper exhaust port 110. As shown in FIG. In addition, in this adhesion process section, since the board | substrate G is heated by the lower crack plate heater 118 during a movement, predetermined | prescribed substrate processing temperature Ts can be maintained. For example, when the substrate conveyance speed is set to 30 mm / sec and the adhesion treatment section is set to 800 mm, the adhesion treatment time is about 27 seconds.

In this coalescing unit (AD) 40, the upper cover (even after the HMDS gas (M) ejected from the HMDS nozzle 98 as described above touches the upper surface (surface to be processed) of the substrate G to pass directly below ( It adheres to the surface to be processed through the gap space that can be as narrow as possible between the substrate 100 and the substrate G, along with the substrate or along the substrate. In addition, such a flow or atmosphere of the HMDS gas M is substantially uniform in the longitudinal direction of the HMDS nozzle 98, that is, in the width direction (Y direction) of the substrate G, and the longitudinal direction X of the substrate G. Direction) acts on each part of the substrate substantially uniformly. As a result, the vapor-type HMDS supplied from the HMDS gas generating unit 104 can be uniformly coated on the surface to be treated of the substrate G with low consumption and efficiency.

In addition, the HMDS gas (M) which flows to the left and right outside of the substrate (G) in the coalescing unit (AD) 40, or is ejected from the HMDS nozzle 98 between the two substrates (G, G) before and after HMDS gas M is collected in the lower cover 102 and discharged from the lower exhaust port 120. In addition, most of the (extra) HMDS gas M remaining unattached to the surface to be processed on the substrate G is discharged from the upper exhaust port 110. In that sense, the upper exhaust device 112 may be turned on only during the adhesion processing of the sheet to each substrate G. In addition, the HMDS gas M recovered from the upper exhaust device 112 may be fed back to the HMDS gas generating unit 104, or may be rotated by recycling. The timing at which each of the substrates G passes through the adhesion unit AD 40 is determined by the controller based on the substrate detection signal from the position sensor 178. The discharge operation of the HMDS nozzle 98 may be stopped between and G).

When the above-mentioned adhesion process is received by the adhesion unit AD 40, the board | substrate G enters into the cooling unit (COL) 42 of the downstream side from the part (substrate front end side) in which the process was complete | finished. In the cooling unit (COL) 42, the primary cooling gas nozzles 126, 128 initially receive the cooling gas (high pressure air) at room temperature with respect to the substrate G passing through the conveying path 32 by the rotor conveyance. The air is blown hard, and then the secondary cooling gas nozzle 130 blows hard the cooling gas (high pressure air) at the reference temperature. In this way, the board | substrate G is conveyed to the application | coating process part 28 of the rear end from the end point (transport part) of the conveyance path 32 at predetermined | prescribed board | substrate temperature.

As described above, in the thermal processing unit 26, each thermal processing unit of the dehydration bake unit (DHP) 38, the coalescing unit (AD) 40, and the cooling unit (COL) 42 is a cleaning process unit 24. Are arranged in a line in the order of the process along the conveyance path 32 which continues from the (). While the board | substrate G moves to the downstream side by the rotor conveyance of a fixed speed on the conveyance path 32, dehydration baking unit (DHP) 38 performs dehydration baking of the flat-flow system, and adheres the unit (AD) ( At 40), hydrophobization or coalescence treatment of the flow current method is performed. In the cooling unit (COL) 42, cooling of the flow stream method or constant substrate temperature is performed. That is, dehydration baking (DHP), adhesion treatment (AD), and substrate temperature constant (COL) while the substrate G moves in the direction of the process line A on the conveying path 32 to the rotor conveyance in the flat stream. The three heat treatment steps of are continuously and efficiently performed.

A transfer robot or a moving mounting mechanism for individually transporting or moving the substrate G separately and between the thermal processing units 38, 40, 42 and between the units is not used, and an opening / closing mechanism for opening or closing a part of the unit housing is also used. It is not used. As a result, there is little fear that particles may be generated or attached to the substrate in each unit and between adjacent units. Also, no transfer mechanism, gate mechanism, or the like is used between the cleaning process section 24 and the thermal processing section 26, and there is almost no inflow of particles from the upstream side.

Moreover, there is no scene which stops the board | substrate G for any process or conveyance in the middle of the conveyance path 32, and is sent to the board | substrate G which is continuously discharged | emitted by the constant tact from the cassette station (C / S) 14. FIG. The thermal processing units 38, 40, 42 correspond to each other constantly smoothly. In other words, the tact for each of the thermal processing units 38, 40, 42 corresponds to the tact of the whole system, and it is not necessary to operate in parallel using a plurality of units of the same type. For this reason, not only can the cost of hardware and conveyance software in the thermal processing unit be reduced, but the gap of the processing quality caused by the device difference of the thermal processing unit is also eliminated.

In each thermal processing unit, the dehydration bake unit (DHP) 38 has a movement (rotor conveyance) in the substrate G that has just received a cleaning process in the cleaning process unit 24 as described above. The dehydration baking of the flat stream is performed using the warm air nozzles 94 and 96 and the crack plate heaters 84 and 86, and the substrate temperature at the end of the dehydration baking is maintained as it is (as the substrate temperature for the adhesion treatment). It is sent to the coalescence unit (AD) 40 on the downstream side.

The coalescence unit (AD) 40 is connected to the substrate G by the HMDS nozzle 98 and the upper cover 100 with respect to the substrate G that moves on the conveyance path 32 by the rotor conveyance as described above. The HMDS gas atmosphere extending in the conveying direction so as to be parallel to each other is formed in a narrow gap space in contact with the substrate-treated surface to perform flat-flow coalescing treatment, and the treatment efficiency and processing quality are improved, and the HMDS consumption is greatly reduced. .

The cooling unit (COL) 42 changes the place to the board | substrate G which moves on the conveyance path 32 by rotor conveyance as mentioned above, and performs a primary cooling and a secondary cooling in steps, and for a short time It is made to return a board | substrate temperature to the reference temperature near normal temperature from the setting temperature for adhesion processing in the inside.

As mentioned above, although preferred embodiment of this invention was described, this invention is not limited to embodiment mentioned above, A various deformation | transformation and a change can be made within the range of the technical idea. For example, in the coalescence unit (AD) 40 of the above-described embodiment, the HMDS nozzle 98 is configured as a shower head type, and the nozzle size in the conveying direction (X direction) is selected to be significantly smaller than the substrate size. In addition, the adhesion treatment space is formed by the combination of the upper cover 100. In this case, the size or length of the coalescence treatment section in which the HMDS nozzle 98 and the top cover 100 are combined, or the ratio of the sections of both the 98 and 100 can be arbitrarily selected. Therefore, as the HMDS nozzle 98, for example, as shown in Fig. 8, an elongated nozzle having a discharge port 98a of a slit type A or a fine hole line type B may be used.

In addition, in the coalescence unit (AD) 40, the HMDS gas is introduced between the HMDS gas generating unit 104 and the HMDS nozzle 98, for example, in the gas pipe 106 as indicated by the dotted line 180 in FIG. It is also possible to provide a heater 180 for heating to a temperature near the processing temperature (for example, 100 ° C). It is also possible to omit the crack plate heater 118 in the lower cover 102. Moreover, the location, shape, number, etc. of the exhaust ports 110 and 120 provided in the coalescing unit AD 40 can also be selected arbitrarily. For example, a configuration may be provided in which exhaust ports are provided on sidewalls on the left and right sides connecting the upper cover 100 and the lower cover 102.

In the dehydration bake unit (DHP) 38, one or both of the upper and lower warm air heaters 94 and 96, or one of the upper and lower crack plate heaters 84 and 86 may be omitted. In that case, as shown in FIG. 9, the structure which installs the 1-layer or multilayer reflective heat sink 182 which consists of aluminum plates, for example in parallel with the conveyance path 32 in the unit housing 85 is preferable. Do. Although not shown in the cooling unit (COL) 42, one of the upper and lower primary cooling nozzles 126 and 128 may be omitted. In addition, the structure (FIG. 4) of the crack plate heaters 84 and 86 is an example, and various deformation | transformation and substitution are possible. For example, you may use the heat generating body which meandered in the two-dimensional direction (XY direction) the sheath heater which accommodated the heating coil of the insulation coating in the SUS pipe. The posture of the back of the substrate G on the conveying path 32 is not limited to the horizontal posture, but is inclined in the front-rear direction (X direction), the left-right direction (Y direction), and other arbitrary directions. It is also possible to pose. The conveyance path 32 is also not limited to the rotor conveyance path, For example, the conveyance path for flat streams of another system, such as a belt conveyance path, may be sufficient.

The substrate to be processed in the present invention is not limited to an LCD substrate, and various substrates for flat panel displays, semiconductor wafers, CD substrates, glass substrates, photomasks, printed substrates, and the like can also be used.

According to the substrate processing apparatus of the present invention, the throughput and the tact of the coalescence treatment can be improved by the above-described configuration and operation, and the reduction of the HMDS consumption, the device configuration, and the cost reduction can be realized, and the problem of particles is also achieved. You can also eliminate.

Claims (17)

A conveying path formed by providing a conveying body for conveying the substrate to be processed backward and looking upwards in a predetermined horizontal conveyance direction; A conveying drive unit which drives the conveying body to convey the substrate on the conveying path; A coalescing treatment unit for emitting the HMDS gas in the first section toward the target surface of the substrate moving on the conveying path, The coalescence processing unit, An elongated HMDS nozzle having a slit-like or fine-hole-lined discharge port extending in a direction crossing the conveying path and injecting the HMDS gas downward from above the conveying path near an upstream end of the first section; An upper cover extending from the position near the lower end of the HMDS nozzle to a position near the downstream end of the first section with a predetermined gap with the conveying path; A first exhaust port provided at a downstream end of the upper cover; A first exhaust mechanism for discharging the gas in the upper cover through the first exhaust port Substrate processing apparatus. The substrate processing apparatus of claim 1, wherein the gap is 10 mm or less. The substrate processing apparatus according to claim 1, wherein the HMDS nozzle has a shower plate for making the HMDS gas blow out at a uniform laminar flow. The substrate processing apparatus according to any one of claims 1 to 3, wherein the coalescence processing unit has a lower cover that extends below the conveying path facing one or more of the HMDS nozzle and the upper cover. The method of claim 4, wherein the coalescence processing unit, A second exhaust port provided in the lower cover; And a second exhaust mechanism for discharging the gas in the lower cover through the second exhaust port. The substrate processing apparatus according to claim 4, wherein the upper cover and the lower cover are connected by sidewalls extending in the vertical direction on both sides of the transport path. The substrate processing apparatus according to any one of claims 1 to 3, wherein the coalescence processing unit has a heater for heating the substrate moving from the lower side in the first section. The heating in any one of Claims 1-3 which heats the said board | substrate which moves the said conveyance path to the 1st set temperature in the 2nd section set by the upstream side of the said 1st section in a conveyance direction. Substrate processing apparatus which has a part. The substrate processing apparatus of claim 8, wherein the heating unit has a heat radiator that radiates heat uniformly from at least one of upward and downward toward the substrate on the transfer path. The heat dissipation temperature of the heat sink is selected as a first temperature corresponding to the first set temperature near the downstream end of the second section, and the first temperature near an upstream end of the second section. A substrate processing apparatus selected at a higher second temperature. The substrate processing apparatus according to claim 8, wherein the heating unit has a warm air nozzle that injects warm air at a predetermined temperature toward the substrate on the transport path near an upstream end of the second section. The said 2nd board | substrate which moves the said conveyance path in the 3rd section set by the downstream side of the said 1st section in a conveyance direction in the conveyance direction, The 2nd of any one of Claims 1-3 characterized by the above-mentioned. A substrate processing apparatus having a cooling unit that cools down to a set temperature. The substrate processing apparatus according to claim 12, wherein the cooling unit has one or a plurality of cooling gas nozzles for directing a gas flow for cooling from at least one of upward and downward toward the substrate on the transfer path. The substrate processing apparatus according to claim 13, wherein the cooling gas nozzle located at the most downstream side among the cooling gas nozzles ejects the cooling gas flow regulated to the second set temperature. delete delete delete

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