JPH0155460B2 - - Google Patents
Info
- Publication number
- JPH0155460B2 JPH0155460B2 JP57226716A JP22671682A JPH0155460B2 JP H0155460 B2 JPH0155460 B2 JP H0155460B2 JP 57226716 A JP57226716 A JP 57226716A JP 22671682 A JP22671682 A JP 22671682A JP H0155460 B2 JPH0155460 B2 JP H0155460B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- address lines
- transistor
- ground conductor
- matrix array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57226716A JPS59119379A (ja) | 1982-12-27 | 1982-12-27 | 薄型表示装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57226716A JPS59119379A (ja) | 1982-12-27 | 1982-12-27 | 薄型表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59119379A JPS59119379A (ja) | 1984-07-10 |
JPH0155460B2 true JPH0155460B2 (enrdf_load_html_response) | 1989-11-24 |
Family
ID=16849510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57226716A Granted JPS59119379A (ja) | 1982-12-27 | 1982-12-27 | 薄型表示装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59119379A (enrdf_load_html_response) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7116302B2 (en) | 1991-10-16 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Process of operating active matrix display device having thin film transistors |
US7253440B1 (en) | 1991-10-16 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having at least first and second thin film transistors |
US7456427B2 (en) | 1991-08-26 | 2008-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor devices and method of manufacturing the same |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0812539B2 (ja) * | 1985-01-29 | 1996-02-07 | 株式会社東芝 | 表示装置及びその製造方法 |
JPS62100737A (ja) * | 1985-10-28 | 1987-05-11 | Seiko Epson Corp | 液晶表示装置 |
JP3042493B2 (ja) | 1998-05-13 | 2000-05-15 | 日本電気株式会社 | 液晶表示装置およびその駆動方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5665176A (en) * | 1979-10-31 | 1981-06-02 | Canon Kk | Display device |
JPS5730882A (en) * | 1980-07-31 | 1982-02-19 | Suwa Seikosha Kk | Active matrix substrate |
-
1982
- 1982-12-27 JP JP57226716A patent/JPS59119379A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7456427B2 (en) | 1991-08-26 | 2008-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor devices and method of manufacturing the same |
US7116302B2 (en) | 1991-10-16 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Process of operating active matrix display device having thin film transistors |
US7253440B1 (en) | 1991-10-16 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having at least first and second thin film transistors |
Also Published As
Publication number | Publication date |
---|---|
JPS59119379A (ja) | 1984-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3273793B2 (ja) | 改良されたtft、該tft及び該tftを含むマトリクスディスプレイの製造方法 | |
US6914260B2 (en) | Electro-optical device | |
JP3401589B2 (ja) | Tftアレイ基板および液晶表示装置 | |
JPS6045219A (ja) | アクテイブマトリクス型表示装置 | |
JPH0814669B2 (ja) | マトリクス型表示装置 | |
JPH09162412A (ja) | 薄膜トランジスタおよび薄膜トランジスタアレイ | |
JP2625268B2 (ja) | アクティブマトリクス基板 | |
JPH02830A (ja) | 薄膜トランジスタおよびそれを用いた液晶デイスプレイ装置 | |
US5432625A (en) | Display screen having opaque conductive optical mask and TFT of semiconductive, insulating, and conductive layers on first transparent conductive film | |
JPH0155460B2 (enrdf_load_html_response) | ||
US5663575A (en) | Liquid crystal display device providing a high aperture ratio | |
JP3102819B2 (ja) | 液晶表示装置及びその駆動方法 | |
JPH06258668A (ja) | マトリクスアレイ基板とその製造方法およびそれを用いた液晶表示装置 | |
TW200528893A (en) | Method of manufacturing thin film transistor array and device | |
JP2820738B2 (ja) | 液晶表示装置用の薄膜トランジスタとクロスオーバ構体およびその製造法 | |
JP3133676B2 (ja) | 液晶表示装置 | |
JP2960268B2 (ja) | アクティブマトリックス液晶パネル及びその製造方法と駆動方法並びにアクティブマトリックス液晶ディスプレイ | |
JP3405988B2 (ja) | 埋込み接地面を利用する活性マトリックス表示装置 | |
JP3089675B2 (ja) | 薄膜電界効果型トランジスタ駆動液晶表示素子アレイ及び駆動方法 | |
JPH07248508A (ja) | 液晶表示装置 | |
JP2687967B2 (ja) | 液晶表示装置 | |
JP2947299B2 (ja) | マトリックス型表示装置 | |
JPH0650777B2 (ja) | アクテイブマトリクス表示装置の基板 | |
EP0335724A2 (en) | Thin film transistor array for an electro-optical device and method of manufacturing the same | |
JPH0340511B2 (enrdf_load_html_response) |