JPH0154854B2 - - Google Patents

Info

Publication number
JPH0154854B2
JPH0154854B2 JP60084106A JP8410685A JPH0154854B2 JP H0154854 B2 JPH0154854 B2 JP H0154854B2 JP 60084106 A JP60084106 A JP 60084106A JP 8410685 A JP8410685 A JP 8410685A JP H0154854 B2 JPH0154854 B2 JP H0154854B2
Authority
JP
Japan
Prior art keywords
mask
substrate
pattern
stage
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60084106A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61242021A (ja
Inventor
Junji Isohata
Yoshiharu Nakamura
Masao Totsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP60084106A priority Critical patent/JPS61242021A/ja
Publication of JPS61242021A publication Critical patent/JPS61242021A/ja
Publication of JPH0154854B2 publication Critical patent/JPH0154854B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP60084106A 1985-04-19 1985-04-19 露光装置 Granted JPS61242021A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60084106A JPS61242021A (ja) 1985-04-19 1985-04-19 露光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60084106A JPS61242021A (ja) 1985-04-19 1985-04-19 露光装置

Publications (2)

Publication Number Publication Date
JPS61242021A JPS61242021A (ja) 1986-10-28
JPH0154854B2 true JPH0154854B2 (ko) 1989-11-21

Family

ID=13821266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60084106A Granted JPS61242021A (ja) 1985-04-19 1985-04-19 露光装置

Country Status (1)

Country Link
JP (1) JPS61242021A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63175859A (ja) * 1987-01-16 1988-07-20 Ushio Inc 液晶基板製作の露光方式
EP0940710A3 (en) * 1993-12-07 1999-12-22 Kabushiki Kaisha Toshiba Display device and fabrication method thereof
JP4508354B2 (ja) * 2000-04-28 2010-07-21 キヤノン株式会社 走査露光装置および走査露光方法
US20080055577A1 (en) * 2006-08-30 2008-03-06 Asml Netherlands B.V. Lithographic apparatus and method
JP5210052B2 (ja) * 2008-06-02 2013-06-12 ルネサスエレクトロニクス株式会社 半導体デバイスの製造方法

Also Published As

Publication number Publication date
JPS61242021A (ja) 1986-10-28

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