JPH0153509B2 - - Google Patents
Info
- Publication number
- JPH0153509B2 JPH0153509B2 JP20976081A JP20976081A JPH0153509B2 JP H0153509 B2 JPH0153509 B2 JP H0153509B2 JP 20976081 A JP20976081 A JP 20976081A JP 20976081 A JP20976081 A JP 20976081A JP H0153509 B2 JPH0153509 B2 JP H0153509B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- recess
- forming
- film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20976081A JPS58114439A (ja) | 1981-12-28 | 1981-12-28 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20976081A JPS58114439A (ja) | 1981-12-28 | 1981-12-28 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58114439A JPS58114439A (ja) | 1983-07-07 |
| JPH0153509B2 true JPH0153509B2 (en, 2012) | 1989-11-14 |
Family
ID=16578170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20976081A Granted JPS58114439A (ja) | 1981-12-28 | 1981-12-28 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58114439A (en, 2012) |
-
1981
- 1981-12-28 JP JP20976081A patent/JPS58114439A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58114439A (ja) | 1983-07-07 |
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