JPH0149015B2 - - Google Patents

Info

Publication number
JPH0149015B2
JPH0149015B2 JP58206890A JP20689083A JPH0149015B2 JP H0149015 B2 JPH0149015 B2 JP H0149015B2 JP 58206890 A JP58206890 A JP 58206890A JP 20689083 A JP20689083 A JP 20689083A JP H0149015 B2 JPH0149015 B2 JP H0149015B2
Authority
JP
Japan
Prior art keywords
resist
metal
pattern
thickness
lift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58206890A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60100432A (ja
Inventor
Toshio Nonaka
Hajime Matsura
Toshimasa Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP20689083A priority Critical patent/JPS60100432A/ja
Publication of JPS60100432A publication Critical patent/JPS60100432A/ja
Publication of JPH0149015B2 publication Critical patent/JPH0149015B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
JP20689083A 1983-11-05 1983-11-05 リフトオフ金属パタ−ン形成方法 Granted JPS60100432A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20689083A JPS60100432A (ja) 1983-11-05 1983-11-05 リフトオフ金属パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20689083A JPS60100432A (ja) 1983-11-05 1983-11-05 リフトオフ金属パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS60100432A JPS60100432A (ja) 1985-06-04
JPH0149015B2 true JPH0149015B2 (enrdf_load_stackoverflow) 1989-10-23

Family

ID=16530741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20689083A Granted JPS60100432A (ja) 1983-11-05 1983-11-05 リフトオフ金属パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS60100432A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5017459A (en) * 1989-04-26 1991-05-21 Eastman Kodak Company Lift-off process
JPH06140434A (ja) * 1992-10-26 1994-05-20 Mitsubishi Electric Corp 電界効果型トランジスタの製造方法
JP3119957B2 (ja) * 1992-11-30 2000-12-25 株式会社東芝 半導体装置の製造方法
CN102482476B (zh) * 2009-08-24 2015-05-20 富士化学株式会社 丙烯酸类树脂组合物,其制备方法,以及使用其形成的建筑材料、时尚配饰和光学材料

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032350B2 (ja) * 1977-06-21 1985-07-27 富士通株式会社 半導体装置の製造方法
JPS5646536A (en) * 1979-09-22 1981-04-27 Nippon Telegr & Teleph Corp <Ntt> Formation of microminiature electrode

Also Published As

Publication number Publication date
JPS60100432A (ja) 1985-06-04

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