JPS60100432A - リフトオフ金属パタ−ン形成方法 - Google Patents
リフトオフ金属パタ−ン形成方法Info
- Publication number
- JPS60100432A JPS60100432A JP20689083A JP20689083A JPS60100432A JP S60100432 A JPS60100432 A JP S60100432A JP 20689083 A JP20689083 A JP 20689083A JP 20689083 A JP20689083 A JP 20689083A JP S60100432 A JPS60100432 A JP S60100432A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- substrate
- resist
- thickness
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 title claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 57
- 230000015572 biosynthetic process Effects 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims description 6
- 239000010931 gold Substances 0.000 abstract description 12
- 229910052737 gold Inorganic materials 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 9
- 150000002739 metals Chemical class 0.000 abstract description 7
- 230000005012 migration Effects 0.000 abstract description 7
- 238000013508 migration Methods 0.000 abstract description 7
- 238000001704 evaporation Methods 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 2
- 229920003986 novolac Polymers 0.000 abstract description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- 206010011732 Cyst Diseases 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- -1 acetate ester Chemical class 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 150000002168 ethanoic acid esters Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20689083A JPS60100432A (ja) | 1983-11-05 | 1983-11-05 | リフトオフ金属パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20689083A JPS60100432A (ja) | 1983-11-05 | 1983-11-05 | リフトオフ金属パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60100432A true JPS60100432A (ja) | 1985-06-04 |
| JPH0149015B2 JPH0149015B2 (enrdf_load_stackoverflow) | 1989-10-23 |
Family
ID=16530741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20689083A Granted JPS60100432A (ja) | 1983-11-05 | 1983-11-05 | リフトオフ金属パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60100432A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5017459A (en) * | 1989-04-26 | 1991-05-21 | Eastman Kodak Company | Lift-off process |
| US5338703A (en) * | 1992-10-26 | 1994-08-16 | Mitsubishi Denki Kabushiki Kaisha | Method for producing a recessed gate field effect transistor |
| US5385851A (en) * | 1992-11-30 | 1995-01-31 | Kabushiki Kaisha Toshiba | Method of manufacturing HEMT device using novolak-based positive-type resist |
| GB2485089A (en) * | 2009-08-24 | 2012-05-02 | Fuji Chemical Company Ltd | Acrylic resin composition and process for production thereof, and architectural material, fashion accessory and optical material each produced using the |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS547873A (en) * | 1977-06-21 | 1979-01-20 | Fujitsu Ltd | Manufacture for semiconductor device |
| JPS5646536A (en) * | 1979-09-22 | 1981-04-27 | Nippon Telegr & Teleph Corp <Ntt> | Formation of microminiature electrode |
-
1983
- 1983-11-05 JP JP20689083A patent/JPS60100432A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS547873A (en) * | 1977-06-21 | 1979-01-20 | Fujitsu Ltd | Manufacture for semiconductor device |
| JPS5646536A (en) * | 1979-09-22 | 1981-04-27 | Nippon Telegr & Teleph Corp <Ntt> | Formation of microminiature electrode |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5017459A (en) * | 1989-04-26 | 1991-05-21 | Eastman Kodak Company | Lift-off process |
| US5338703A (en) * | 1992-10-26 | 1994-08-16 | Mitsubishi Denki Kabushiki Kaisha | Method for producing a recessed gate field effect transistor |
| US5385851A (en) * | 1992-11-30 | 1995-01-31 | Kabushiki Kaisha Toshiba | Method of manufacturing HEMT device using novolak-based positive-type resist |
| GB2485089A (en) * | 2009-08-24 | 2012-05-02 | Fuji Chemical Company Ltd | Acrylic resin composition and process for production thereof, and architectural material, fashion accessory and optical material each produced using the |
| GB2485089B (en) * | 2009-08-24 | 2014-03-12 | Fuji Chemical Company Ltd | Acrylic resin composition, method of manufacturing the same, and architectural material, fashion accessory and optical material formed using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0149015B2 (enrdf_load_stackoverflow) | 1989-10-23 |
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