JPH0147015B2 - - Google Patents

Info

Publication number
JPH0147015B2
JPH0147015B2 JP54150251A JP15025179A JPH0147015B2 JP H0147015 B2 JPH0147015 B2 JP H0147015B2 JP 54150251 A JP54150251 A JP 54150251A JP 15025179 A JP15025179 A JP 15025179A JP H0147015 B2 JPH0147015 B2 JP H0147015B2
Authority
JP
Japan
Prior art keywords
region
gate
semiconductor region
current
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54150251A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5673460A (en
Inventor
Junichi Nishizawa
Tadahiro Oomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP15025179A priority Critical patent/JPS5673460A/ja
Publication of JPS5673460A publication Critical patent/JPS5673460A/ja
Publication of JPH0147015B2 publication Critical patent/JPH0147015B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP15025179A 1979-11-19 1979-11-19 Semiconductor integrated circuit Granted JPS5673460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15025179A JPS5673460A (en) 1979-11-19 1979-11-19 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15025179A JPS5673460A (en) 1979-11-19 1979-11-19 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5673460A JPS5673460A (en) 1981-06-18
JPH0147015B2 true JPH0147015B2 (enExample) 1989-10-12

Family

ID=15492851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15025179A Granted JPS5673460A (en) 1979-11-19 1979-11-19 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5673460A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0783121B2 (ja) * 1988-09-02 1995-09-06 三菱電機株式会社 電界効果型半導体装置

Also Published As

Publication number Publication date
JPS5673460A (en) 1981-06-18

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