JPH0147015B2 - - Google Patents
Info
- Publication number
- JPH0147015B2 JPH0147015B2 JP54150251A JP15025179A JPH0147015B2 JP H0147015 B2 JPH0147015 B2 JP H0147015B2 JP 54150251 A JP54150251 A JP 54150251A JP 15025179 A JP15025179 A JP 15025179A JP H0147015 B2 JPH0147015 B2 JP H0147015B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- semiconductor region
- current
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000012212 insulator Substances 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910005533 GaO Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
- H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices
Landscapes
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15025179A JPS5673460A (en) | 1979-11-19 | 1979-11-19 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15025179A JPS5673460A (en) | 1979-11-19 | 1979-11-19 | Semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5673460A JPS5673460A (en) | 1981-06-18 |
| JPH0147015B2 true JPH0147015B2 (enrdf_load_stackoverflow) | 1989-10-12 |
Family
ID=15492851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15025179A Granted JPS5673460A (en) | 1979-11-19 | 1979-11-19 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5673460A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0783121B2 (ja) * | 1988-09-02 | 1995-09-06 | 三菱電機株式会社 | 電界効果型半導体装置 |
-
1979
- 1979-11-19 JP JP15025179A patent/JPS5673460A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5673460A (en) | 1981-06-18 |
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