JPS5673460A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5673460A
JPS5673460A JP15025179A JP15025179A JPS5673460A JP S5673460 A JPS5673460 A JP S5673460A JP 15025179 A JP15025179 A JP 15025179A JP 15025179 A JP15025179 A JP 15025179A JP S5673460 A JPS5673460 A JP S5673460A
Authority
JP
Japan
Prior art keywords
regions
region
type
inverted
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15025179A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0147015B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Tadahiro Omi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP15025179A priority Critical patent/JPS5673460A/ja
Publication of JPS5673460A publication Critical patent/JPS5673460A/ja
Publication of JPH0147015B2 publication Critical patent/JPH0147015B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP15025179A 1979-11-19 1979-11-19 Semiconductor integrated circuit Granted JPS5673460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15025179A JPS5673460A (en) 1979-11-19 1979-11-19 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15025179A JPS5673460A (en) 1979-11-19 1979-11-19 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5673460A true JPS5673460A (en) 1981-06-18
JPH0147015B2 JPH0147015B2 (enrdf_load_stackoverflow) 1989-10-12

Family

ID=15492851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15025179A Granted JPS5673460A (en) 1979-11-19 1979-11-19 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5673460A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0268966A (ja) * 1988-09-02 1990-03-08 Mitsubishi Electric Corp 電界効果型半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0268966A (ja) * 1988-09-02 1990-03-08 Mitsubishi Electric Corp 電界効果型半導体装置

Also Published As

Publication number Publication date
JPH0147015B2 (enrdf_load_stackoverflow) 1989-10-12

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