JPH0143873Y2 - - Google Patents
Info
- Publication number
- JPH0143873Y2 JPH0143873Y2 JP1984151068U JP15106884U JPH0143873Y2 JP H0143873 Y2 JPH0143873 Y2 JP H0143873Y2 JP 1984151068 U JP1984151068 U JP 1984151068U JP 15106884 U JP15106884 U JP 15106884U JP H0143873 Y2 JPH0143873 Y2 JP H0143873Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- light
- optical
- film
- oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 63
- 230000003287 optical effect Effects 0.000 claims description 39
- 239000002223 garnet Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 15
- 230000010355 oscillation Effects 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 32
- 230000005540 biological transmission Effects 0.000 description 11
- 239000013307 optical fiber Substances 0.000 description 9
- 230000010287 polarization Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 7
- 229910052797 bismuth Inorganic materials 0.000 description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 230000002427 irreversible effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984151068U JPH0143873Y2 (tr) | 1984-10-05 | 1984-10-05 | |
| US06/715,954 US4686678A (en) | 1984-03-27 | 1985-03-25 | Semiconductor laser apparatus with isolator |
| EP85302090A EP0158475B1 (en) | 1984-03-27 | 1985-03-26 | Semiconductor laser apparatus with isolator |
| DE8585302090T DE3583453D1 (de) | 1984-03-27 | 1985-03-26 | Halbleiterlaservorrichtung mit einem isolator. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984151068U JPH0143873Y2 (tr) | 1984-10-05 | 1984-10-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6166970U JPS6166970U (tr) | 1986-05-08 |
| JPH0143873Y2 true JPH0143873Y2 (tr) | 1989-12-19 |
Family
ID=30709199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984151068U Expired JPH0143873Y2 (tr) | 1984-03-27 | 1984-10-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0143873Y2 (tr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004088129A (ja) * | 2003-12-08 | 2004-03-18 | Sony Corp | レーザ光発生装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60212708A (ja) * | 1984-04-06 | 1985-10-25 | Hitachi Ltd | 磁気光学薄膜の形成法 |
| JPS60246298A (ja) * | 1984-05-16 | 1985-12-05 | Hitachi Ltd | 複合薄膜構造 |
-
1984
- 1984-10-05 JP JP1984151068U patent/JPH0143873Y2/ja not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60212708A (ja) * | 1984-04-06 | 1985-10-25 | Hitachi Ltd | 磁気光学薄膜の形成法 |
| JPS60246298A (ja) * | 1984-05-16 | 1985-12-05 | Hitachi Ltd | 複合薄膜構造 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6166970U (tr) | 1986-05-08 |
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