JPH0142624B2 - - Google Patents
Info
- Publication number
- JPH0142624B2 JPH0142624B2 JP587783A JP587783A JPH0142624B2 JP H0142624 B2 JPH0142624 B2 JP H0142624B2 JP 587783 A JP587783 A JP 587783A JP 587783 A JP587783 A JP 587783A JP H0142624 B2 JPH0142624 B2 JP H0142624B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- substrate
- forming
- cooling
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 47
- 238000001816 cooling Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 32
- 230000008569 process Effects 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP587783A JPS59132128A (ja) | 1983-01-19 | 1983-01-19 | レジストパタ−ンの形成方法及び装置 |
| KR1019840000153A KR860002082B1 (ko) | 1983-01-19 | 1984-01-16 | 레지스트 패턴의 형성 방법 및 장치 |
| DE88102726T DE3486187T2 (de) | 1983-01-19 | 1984-01-18 | Verfahren und Vorrichtung zur Herstellung von Schutzlackbildern. |
| EP88102726A EP0275126B1 (en) | 1983-01-19 | 1984-01-18 | Method and apparatus for forming resist pattern |
| EP84300297A EP0114126B1 (en) | 1983-01-19 | 1984-01-18 | Method for forming resist pattern |
| DE8484300297T DE3478060D1 (en) | 1983-01-19 | 1984-01-18 | Method for forming resist pattern |
| US06/789,366 US4717645A (en) | 1983-01-19 | 1985-10-22 | Method and apparatus for forming resist pattern |
| US07/108,767 US4897337A (en) | 1983-01-19 | 1987-10-15 | Method and apparatus for forming resist pattern |
| US07/441,479 US5051338A (en) | 1983-01-19 | 1989-11-27 | Method and apparatus for forming resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP587783A JPS59132128A (ja) | 1983-01-19 | 1983-01-19 | レジストパタ−ンの形成方法及び装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59132128A JPS59132128A (ja) | 1984-07-30 |
| JPH0142624B2 true JPH0142624B2 (en, 2012) | 1989-09-13 |
Family
ID=11623137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP587783A Granted JPS59132128A (ja) | 1983-01-19 | 1983-01-19 | レジストパタ−ンの形成方法及び装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59132128A (en, 2012) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6381820A (ja) * | 1986-09-25 | 1988-04-12 | Toshiba Corp | レジストパタ−ン形成方法 |
| JPH0250165A (ja) * | 1988-05-09 | 1990-02-20 | Mitsubishi Electric Corp | パターン形成方法 |
| JPH0250163A (ja) * | 1988-05-09 | 1990-02-20 | Mitsubishi Electric Corp | パターン形成方法 |
| JPH0341926U (en, 2012) * | 1989-08-31 | 1991-04-22 |
-
1983
- 1983-01-19 JP JP587783A patent/JPS59132128A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59132128A (ja) | 1984-07-30 |
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