JPH0465525B2 - - Google Patents
Info
- Publication number
- JPH0465525B2 JPH0465525B2 JP58106173A JP10617383A JPH0465525B2 JP H0465525 B2 JPH0465525 B2 JP H0465525B2 JP 58106173 A JP58106173 A JP 58106173A JP 10617383 A JP10617383 A JP 10617383A JP H0465525 B2 JPH0465525 B2 JP H0465525B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- temperature
- cooling
- substrate
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001816 cooling Methods 0.000 claims description 122
- 239000000758 substrate Substances 0.000 claims description 108
- 238000000034 method Methods 0.000 claims description 53
- 230000008569 process Effects 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 24
- 238000012545 processing Methods 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000000110 cooling liquid Substances 0.000 claims description 12
- 238000011161 development Methods 0.000 claims description 11
- 238000009835 boiling Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 230000009477 glass transition Effects 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000010583 slow cooling Methods 0.000 claims 2
- 230000035945 sensitivity Effects 0.000 description 33
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 21
- 239000003507 refrigerant Substances 0.000 description 17
- 239000002826 coolant Substances 0.000 description 10
- 230000018109 developmental process Effects 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 5
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- -1 poly(2,2,2-trifluoroethyl-α-chloroacrylate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58106173A JPS59231814A (ja) | 1983-06-14 | 1983-06-14 | レジストパタ−ン形成方法及びレジスト処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58106173A JPS59231814A (ja) | 1983-06-14 | 1983-06-14 | レジストパタ−ン形成方法及びレジスト処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59231814A JPS59231814A (ja) | 1984-12-26 |
| JPH0465525B2 true JPH0465525B2 (en, 2012) | 1992-10-20 |
Family
ID=14426856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58106173A Granted JPS59231814A (ja) | 1983-06-14 | 1983-06-14 | レジストパタ−ン形成方法及びレジスト処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59231814A (en, 2012) |
-
1983
- 1983-06-14 JP JP58106173A patent/JPS59231814A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59231814A (ja) | 1984-12-26 |
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