JPH0140505B2 - - Google Patents

Info

Publication number
JPH0140505B2
JPH0140505B2 JP55100200A JP10020080A JPH0140505B2 JP H0140505 B2 JPH0140505 B2 JP H0140505B2 JP 55100200 A JP55100200 A JP 55100200A JP 10020080 A JP10020080 A JP 10020080A JP H0140505 B2 JPH0140505 B2 JP H0140505B2
Authority
JP
Japan
Prior art keywords
main surface
diffusion
oxide film
silicon oxide
mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55100200A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5724558A (en
Inventor
Kazuko Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10020080A priority Critical patent/JPS5724558A/ja
Publication of JPS5724558A publication Critical patent/JPS5724558A/ja
Publication of JPH0140505B2 publication Critical patent/JPH0140505B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP10020080A 1980-07-22 1980-07-22 Semicondctor device Granted JPS5724558A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10020080A JPS5724558A (en) 1980-07-22 1980-07-22 Semicondctor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10020080A JPS5724558A (en) 1980-07-22 1980-07-22 Semicondctor device

Publications (2)

Publication Number Publication Date
JPS5724558A JPS5724558A (en) 1982-02-09
JPH0140505B2 true JPH0140505B2 (cg-RX-API-DMAC10.html) 1989-08-29

Family

ID=14267653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10020080A Granted JPS5724558A (en) 1980-07-22 1980-07-22 Semicondctor device

Country Status (1)

Country Link
JP (1) JPS5724558A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994028586A1 (en) * 1993-06-01 1994-12-08 Komatsu Ltd. Semiconductor device having high breakdown strength

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109309001B (zh) * 2017-07-26 2022-05-03 天津环鑫科技发展有限公司 一种采用印刷工艺制作gpp芯片的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994028586A1 (en) * 1993-06-01 1994-12-08 Komatsu Ltd. Semiconductor device having high breakdown strength

Also Published As

Publication number Publication date
JPS5724558A (en) 1982-02-09

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