JPH0139221B2 - - Google Patents

Info

Publication number
JPH0139221B2
JPH0139221B2 JP54130115A JP13011579A JPH0139221B2 JP H0139221 B2 JPH0139221 B2 JP H0139221B2 JP 54130115 A JP54130115 A JP 54130115A JP 13011579 A JP13011579 A JP 13011579A JP H0139221 B2 JPH0139221 B2 JP H0139221B2
Authority
JP
Japan
Prior art keywords
layer
contact window
sbd
emitter
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54130115A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5654062A (en
Inventor
Tadashi Kirisako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13011579A priority Critical patent/JPS5654062A/ja
Publication of JPS5654062A publication Critical patent/JPS5654062A/ja
Publication of JPH0139221B2 publication Critical patent/JPH0139221B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP13011579A 1979-10-09 1979-10-09 Production of semiconductor device Granted JPS5654062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13011579A JPS5654062A (en) 1979-10-09 1979-10-09 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13011579A JPS5654062A (en) 1979-10-09 1979-10-09 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5654062A JPS5654062A (en) 1981-05-13
JPH0139221B2 true JPH0139221B2 (enrdf_load_stackoverflow) 1989-08-18

Family

ID=15026301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13011579A Granted JPS5654062A (en) 1979-10-09 1979-10-09 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5654062A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975659A (ja) * 1982-10-22 1984-04-28 Fujitsu Ltd 半導体装置の製造方法
JPS59209854A (ja) * 1983-05-13 1984-11-28 鐘淵化学工業株式会社 多層化薄膜およびその製造法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA998778A (en) * 1972-07-13 1976-10-19 Martin M. Skowron Semiconductor manufacturing process
JPS5121792A (en) * 1974-08-16 1976-02-21 Hitachi Ltd Handotaisochino seizohoho

Also Published As

Publication number Publication date
JPS5654062A (en) 1981-05-13

Similar Documents

Publication Publication Date Title
JPH05347383A (ja) 集積回路の製法
JPH0355984B2 (enrdf_load_stackoverflow)
JPS58139468A (ja) 半導体装置およびその製造方法
JPS6318673A (ja) 半導体装置の製法
JPH0578173B2 (enrdf_load_stackoverflow)
US4525922A (en) Method of producing a semiconductor device
US4740482A (en) Method of manufacturing bipolar transistor
JPH0139221B2 (enrdf_load_stackoverflow)
US3967364A (en) Method of manufacturing semiconductor devices
JPS5846846B2 (ja) ハンドウタイソウチノセイゾウホウホウ
JPS60241261A (ja) 半導体装置およびその製造方法
JP2782737B2 (ja) 半導体装置の製造方法
EP0428067A2 (en) Semiconductor integrated circuit and method of manufacturing the same
JPS6220711B2 (enrdf_load_stackoverflow)
JP2534667B2 (ja) 半導体装置及びその製造方法
JP3235091B2 (ja) Ｍｉｓ型半導体装置の製造方法
JP2517380B2 (ja) 半導体集積回路の製造方法
JP3068733B2 (ja) 半導体装置の製造方法
JP2661153B2 (ja) 半導体装置の製造方法
JPS5965465A (ja) 半導体装置の製造方法
JPH01238058A (ja) 高速バイポーラトランジスタの製造方法
JPS60244036A (ja) 半導体装置とその製造方法
JPS60242662A (ja) 半導体装置
JPH0287621A (ja) 半導体装置の製造方法
JPH0136709B2 (enrdf_load_stackoverflow)