JPH0138390B2 - - Google Patents
Info
- Publication number
- JPH0138390B2 JPH0138390B2 JP7667885A JP7667885A JPH0138390B2 JP H0138390 B2 JPH0138390 B2 JP H0138390B2 JP 7667885 A JP7667885 A JP 7667885A JP 7667885 A JP7667885 A JP 7667885A JP H0138390 B2 JPH0138390 B2 JP H0138390B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- optical waveguide
- current confinement
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 92
- 230000003287 optical effect Effects 0.000 claims description 22
- 238000005253 cladding Methods 0.000 claims description 19
- 239000011247 coating layer Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7667885A JPS61236185A (ja) | 1985-04-12 | 1985-04-12 | 半導体レ−ザ素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7667885A JPS61236185A (ja) | 1985-04-12 | 1985-04-12 | 半導体レ−ザ素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61236185A JPS61236185A (ja) | 1986-10-21 |
| JPH0138390B2 true JPH0138390B2 (enrdf_load_stackoverflow) | 1989-08-14 |
Family
ID=13612088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7667885A Granted JPS61236185A (ja) | 1985-04-12 | 1985-04-12 | 半導体レ−ザ素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61236185A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5146295A (en) * | 1988-03-29 | 1992-09-08 | Omron Tateisi Electronic Co. | Semiconductor light emitting device having a superlattice buffer layer |
| JP2910251B2 (ja) * | 1990-12-28 | 1999-06-23 | 日本電気株式会社 | 半導体レーザ |
| JPH04245417A (ja) * | 1991-01-31 | 1992-09-02 | Sharp Corp | 化合物半導体層の形成方法 |
-
1985
- 1985-04-12 JP JP7667885A patent/JPS61236185A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61236185A (ja) | 1986-10-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |