JPH0137854B2 - - Google Patents
Info
- Publication number
- JPH0137854B2 JPH0137854B2 JP12704281A JP12704281A JPH0137854B2 JP H0137854 B2 JPH0137854 B2 JP H0137854B2 JP 12704281 A JP12704281 A JP 12704281A JP 12704281 A JP12704281 A JP 12704281A JP H0137854 B2 JPH0137854 B2 JP H0137854B2
- Authority
- JP
- Japan
- Prior art keywords
- memory
- transistor
- transistors
- current
- floating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003031 high energy carrier Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56127042A JPS5828875A (ja) | 1981-08-13 | 1981-08-13 | 半導体集積回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56127042A JPS5828875A (ja) | 1981-08-13 | 1981-08-13 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5828875A JPS5828875A (ja) | 1983-02-19 |
JPH0137854B2 true JPH0137854B2 (ko) | 1989-08-09 |
Family
ID=14950181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56127042A Granted JPS5828875A (ja) | 1981-08-13 | 1981-08-13 | 半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5828875A (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6260266A (ja) * | 1985-09-10 | 1987-03-16 | Toshiba Corp | 不揮発性半導体記憶装置 |
US5097444A (en) * | 1989-11-29 | 1992-03-17 | Rohm Corporation | Tunnel EEPROM with overerase protection |
JP3137993B2 (ja) * | 1991-01-16 | 2001-02-26 | 富士通株式会社 | 不揮発性半導体記憶装置 |
WO2002037502A2 (en) * | 2000-10-30 | 2002-05-10 | Virtual Silicon Technology, Inc. | Common source eeprom and flash memory |
-
1981
- 1981-08-13 JP JP56127042A patent/JPS5828875A/ja active Granted
Non-Patent Citations (1)
Title |
---|
SOLID STATE ELECTRONICS=1978 * |
Also Published As
Publication number | Publication date |
---|---|
JPS5828875A (ja) | 1983-02-19 |
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