JPH01321664A - 樹脂封止型半導体装置 - Google Patents

樹脂封止型半導体装置

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Publication number
JPH01321664A
JPH01321664A JP63156101A JP15610188A JPH01321664A JP H01321664 A JPH01321664 A JP H01321664A JP 63156101 A JP63156101 A JP 63156101A JP 15610188 A JP15610188 A JP 15610188A JP H01321664 A JPH01321664 A JP H01321664A
Authority
JP
Japan
Prior art keywords
semiconductor device
resin
faces
metal
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63156101A
Other languages
English (en)
Inventor
Taku Nakamura
卓 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63156101A priority Critical patent/JPH01321664A/ja
Publication of JPH01321664A publication Critical patent/JPH01321664A/ja
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は樹脂封止型半導体装置に関する。
〔従来の技術〕
従来から、半導体装置は安価で、しかも量産性に適して
いることから樹脂封止型が主流となっていた。
第３図は従来の樹脂封止型半導体装置の一例の断面図で
ある。
樹脂封止型半導体装置は、アイランド８の表面にＡ、ペ
ースト９で固着された半導体チップ１と、その表面の周
縁上に設けられたＡｅパッド２にボンディングワイヤの
Ａ、線４を介して接続された内部リード６とを有するエ
ポキシ樹脂等の樹脂部１１を含んで構成されていた。
〔発明が解決しようとする課題〕
上述した従来の樹脂封止型半導体装置では、封止樹脂部
とリードフレームの各部との熱膨張係数が異なるために
密着性が悪く、半導体装置をプリント基板に実装する際
に熱衝撃が加える場合に、樹脂と内部リードや吊りビン
等のリードフレーム界面に間隔を生じ、この間隔から水
分や不純物が半導体装置内に侵入して、チップのボンデ
ィングパッドのＡｅバッドを腐食させるという耐湿性の
欠点があった。
特に、表面実装型の樹脂封止型半導体装置は小型でかつ
薄型化であるので、実装時の熱衝撃により、封止樹脂に
亀裂が生じ、耐熱性が著しく劣化するという欠点を有し
ていた。
本発明の目的は、耐湿性のよい樹脂封止型半導体装置を
提供することにある。
〔課題を解決するための手段〕
本発明の樹脂封止型半導体装置は、アイランドに載置さ
れた半導体チップと、該半導体チップのボンディングパ
ッドにボンディングワイヤを介して接続する内部リード
とを封止する樹脂封止半導体装置において、前記ボンデ
ィングパッドとボンディングワイヤとを含む金属部の表
面を被覆する金属膜を設けて構成されている。
〔実施例〕
次に、本発明の実施例について図面を参照しながら説明
する。
第１図は本発明の第１の実施例の断面図である。
樹脂封止型半導体装置は、アイランド８と半導体チップ
１とそのＡ！！パッド２とＡｕ線４と内部リード６の実
装部の金属部表面にＷ−３ｌ膜１０を被覆したことが異
なる点以外は第３図の従来の樹脂封止半導体装置と同一
である。
すなわち、半導体チップ１の表面のＡｌパッド２とＡｕ
線４と内部リード６と外部リード５が電気的に接続され
ており、また、アイランド８と半導体チップの側面もＡ
、ペースト９を介して金属面を有している。
樹脂部１１と各部の界面のうち、上記の金属面を選択的
にＷＦ６のＳ、Ｈ４ガスによる還元反応を用いたＷ選択
ＣＶＤにより、Ｗ　　Ｓ＋　　（タングステンシリサイ
ド）膜で約０．５〜１μｍ程度被覆する。
このＷＳ＋膜は半導体チップへの影響、ボンディング剥
がれ（パープル・ブレーグ）、量産性等を考慮に入れて
低温・短時間・常圧下で行なわれるのが望ましい。
なお、外部リード５はマスク等で被覆を防ぐ必要がある
。
Ｗ−３ｌ膜で被覆した後、従来と同様にエポキシ樹脂で
封止し、外部リード５の成形加工を行なう。
上記のような＃４遣にして、従来は樹脂部１１と内部リ
ード６及びＡＵ線４との界面を通して侵入してＡｌバッ
ド２を腐食させていた水分の経路を遮断することができ
、特に、プリント基板に実装した後の半導体装置の耐湿
性が向上する。
例えば外部リード６の半田熱処理後の１２５℃、２気圧
の耐湿時間が従来の約６倍改善した。
第２図は本発明の第２の実施例の断面図である。
第１の実施例と同様にＡＵ線４のボンディング後に金属
薄膜としてＷＳｔｐ１４を形成するが、樹脂封止工程前
に、封止樹脂との密着性が良好な絶縁膜として５ＩＤ２
膜１２をＣＶＤにより形成する。
この際、外部リード５はマスク等で被覆′を防ぐほうが
好ましい。
上記のような構造にすることにより、封止樹脂部との密
着性をより一層均−に高めて界面の劣化を防ぎ、半導体
装置の実装後の耐熱性劣化をより良く防止することがで
きる。
例えば、本実施例によれば１２５℃、２気圧の耐熱時間
が第１の実施例の場合の約２倍に改善される。
なお、上述の第１及び第２の実施例では、アイランド８
及び半導体チップ１の側面及び内部リード６の表面もＷ
−Ｓ＋膜で覆ったが、省いてもよい。
〔発明の効果〕
以上説明したように本発明は、ボンディングワイヤの接
続に、封止樹脂との接触面のうち少くとも半導体チップ
のボンディングパッドとボンディングワイヤとの表面を
選択的に、封止樹脂との密着性が良好で安定な金属薄膜
で被覆することにより、実装時の熱衝撃で発生しやすい
樹脂クラックや界面間隔を低減し、しかも、水分・不純
物の侵入に起因するチップのＡｌパッドの腐食を防ぐの
で、半導体装置の耐湿性劣化を防止して高品質を維持で
きる効果がある。
【図面の簡単な説明】 第１図は本発明の第１の実施例の断面図、第２図は本発
明の第２の実施例の断面図、第３図は従来の樹脂封止型
半導体装置の一例の断面図である。 １・・・半導体チップ、２・・・Ａｅバッド、４・・・
Ａｕ線、６・・・内部リード、１１・・・樹脂部、８・
・・アイランド、９・・・Ａｇペースト、１０・・・Ｗ
−Ｓ、膜、１１・・・５１０２膜。

Claims (1)

    【特許請求の範囲】
  1. 　アイランドに載置された半導体チップと、該半導体チ
    ップのボンディングパッドにボンディングワイヤを介し
    て接続する内部リードとを封止する樹脂封止半導体装置
    において、前記ボンディングパッドとボンディングワイ
    ヤとを含む金属部の表面を被覆する金属膜を設けたこと
    を特徴とする樹脂封止型半導体装置。
JP63156101A 1988-06-23 1988-06-23 樹脂封止型半導体装置 Pending JPH01321664A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63156101A JPH01321664A (ja) 1988-06-23 1988-06-23 樹脂封止型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63156101A JPH01321664A (ja) 1988-06-23 1988-06-23 樹脂封止型半導体装置

Publications (1)

Publication Number Publication Date
JPH01321664A true JPH01321664A (ja) 1989-12-27

Family

ID=15620333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63156101A Pending JPH01321664A (ja) 1988-06-23 1988-06-23 樹脂封止型半導体装置

Country Status (1)

Country Link
JP (1) JPH01321664A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992004729A1 (en) * 1990-09-10 1992-03-19 Olin Corporation Leadframe for molded plastic electronic packages
KR100306230B1 (ko) * 1998-12-30 2001-12-17 마이클 디. 오브라이언 반도체 패키지 구조
JP2014116333A (ja) * 2012-12-06 2014-06-26 Mitsubishi Electric Corp 半導体装置
JP2016086047A (ja) * 2014-10-24 2016-05-19 日亜化学工業株式会社 発光装置の製造方法
WO2017209055A1 (ja) 2016-05-31 2017-12-07 株式会社小松製作所 作業車両
WO2017209058A1 (ja) 2016-05-31 2017-12-07 株式会社小松製作所 作業車両および作業車両の制御方法
WO2018038268A1 (ja) 2016-08-26 2018-03-01 株式会社小松製作所 作業車両および作業車両の制御方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992004729A1 (en) * 1990-09-10 1992-03-19 Olin Corporation Leadframe for molded plastic electronic packages
KR100306230B1 (ko) * 1998-12-30 2001-12-17 마이클 디. 오브라이언 반도체 패키지 구조
JP2014116333A (ja) * 2012-12-06 2014-06-26 Mitsubishi Electric Corp 半導体装置
JP2016086047A (ja) * 2014-10-24 2016-05-19 日亜化学工業株式会社 発光装置の製造方法
WO2017209055A1 (ja) 2016-05-31 2017-12-07 株式会社小松製作所 作業車両
WO2017209058A1 (ja) 2016-05-31 2017-12-07 株式会社小松製作所 作業車両および作業車両の制御方法
WO2018038268A1 (ja) 2016-08-26 2018-03-01 株式会社小松製作所 作業車両および作業車両の制御方法

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