JPH0130315B2 - - Google Patents
Info
- Publication number
- JPH0130315B2 JPH0130315B2 JP56109538A JP10953881A JPH0130315B2 JP H0130315 B2 JPH0130315 B2 JP H0130315B2 JP 56109538 A JP56109538 A JP 56109538A JP 10953881 A JP10953881 A JP 10953881A JP H0130315 B2 JPH0130315 B2 JP H0130315B2
- Authority
- JP
- Japan
- Prior art keywords
- source
- region
- drain
- insulating layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007667 floating Methods 0.000 claims description 129
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 71
- 229920005591 polysilicon Polymers 0.000 claims description 70
- 239000004065 semiconductor Substances 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 30
- 230000000873 masking effect Effects 0.000 claims description 24
- 230000005641 tunneling Effects 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 20
- 229910052796 boron Inorganic materials 0.000 claims description 20
- 238000002955 isolation Methods 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- 230000002829 reductive effect Effects 0.000 claims description 6
- 230000006870 function Effects 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 15
- 230000001590 oxidative effect Effects 0.000 claims 2
- 238000005553 drilling Methods 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 90
- 239000010410 layer Substances 0.000 description 89
- 238000009792 diffusion process Methods 0.000 description 33
- 230000008569 process Effects 0.000 description 23
- 230000005684 electric field Effects 0.000 description 19
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 239000002784 hot electron Substances 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 239000007943 implant Substances 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/184,739 US4409723A (en) | 1980-04-07 | 1980-09-08 | Method of forming non-volatile EPROM and EEPROM with increased efficiency |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5750476A JPS5750476A (en) | 1982-03-24 |
JPH0130315B2 true JPH0130315B2 (US20080094685A1-20080424-C00004.png) | 1989-06-19 |
Family
ID=22678138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56109538A Granted JPS5750476A (en) | 1980-09-08 | 1981-07-15 | High efficiency non-volatile eprom and eeprom |
Country Status (3)
Country | Link |
---|---|
US (1) | US4409723A (US20080094685A1-20080424-C00004.png) |
JP (1) | JPS5750476A (US20080094685A1-20080424-C00004.png) |
DE (1) | DE3117719A1 (US20080094685A1-20080424-C00004.png) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS577162A (en) * | 1980-06-17 | 1982-01-14 | Toshiba Corp | Nonvolatile semiconductor memory and manufacture therefor |
JPS5857750A (ja) * | 1981-10-01 | 1983-04-06 | Seiko Instr & Electronics Ltd | 不揮発性半導体メモリ |
JPS5963763A (ja) * | 1982-10-05 | 1984-04-11 | Fujitsu Ltd | 半導体装置の製造方法 |
US4697330A (en) * | 1983-02-23 | 1987-10-06 | Texas Instruments Incorporated | Floating gate memory process with improved dielectric |
US4949154A (en) * | 1983-02-23 | 1990-08-14 | Texas Instruments, Incorporated | Thin dielectrics over polysilicon |
USRE34535E (en) * | 1983-02-23 | 1994-02-08 | Texas Instruments Incorporated | Floating gate memory with improved dielectric |
JPS6038799A (ja) * | 1983-08-11 | 1985-02-28 | Seiko Instr & Electronics Ltd | 半導体不揮発性メモリ用読み出し回路 |
US4517731A (en) * | 1983-09-29 | 1985-05-21 | Fairchild Camera & Instrument Corporation | Double polysilicon process for fabricating CMOS integrated circuits |
US4769340A (en) * | 1983-11-28 | 1988-09-06 | Exel Microelectronics, Inc. | Method for making electrically programmable memory device by doping the floating gate by implant |
JPS60148168A (ja) * | 1984-01-13 | 1985-08-05 | Seiko Instr & Electronics Ltd | 半導体不揮発性メモリ |
US4639893A (en) * | 1984-05-15 | 1987-01-27 | Wafer Scale Integration, Inc. | Self-aligned split gate EPROM |
DE3576245D1 (de) * | 1984-05-17 | 1990-04-05 | Toshiba Kawasaki Kk | Verfahren zur herstellung eines nichtfluechtigen halbleiter-eeprom-elementes. |
JPS6160997A (ja) * | 1984-08-30 | 1986-03-28 | 石川島播磨重工業株式会社 | シ−ルド掘削工法における細粒土の分級方法及び装置 |
IT1213218B (it) * | 1984-09-25 | 1989-12-14 | Ates Componenti Elettron | Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto. |
US5225719A (en) * | 1985-03-29 | 1993-07-06 | Advanced Micro Devices, Inc. | Family of multiple segmented programmable logic blocks interconnected by a high speed centralized switch matrix |
US4824795A (en) * | 1985-12-19 | 1989-04-25 | Siliconix Incorporated | Method for obtaining regions of dielectrically isolated single crystal silicon |
US4735919A (en) * | 1986-04-15 | 1988-04-05 | General Electric Company | Method of making a floating gate memory cell |
US4783766A (en) * | 1986-05-30 | 1988-11-08 | Seeq Technology, Inc. | Block electrically erasable EEPROM |
IT1191561B (it) * | 1986-06-03 | 1988-03-23 | Sgs Microelettrica Spa | Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente |
IT1191566B (it) * | 1986-06-27 | 1988-03-23 | Sgs Microelettronica Spa | Dispositivo di memoria non labile a semiconduttore del tipo a porta non connessa (floating gate) alterabile elettricamente con area di tunnel ridotta e procedimento di fabbricazione |
US5034786A (en) * | 1986-08-29 | 1991-07-23 | Waferscale Integration, Inc. | Opaque cover for preventing erasure of an EPROM |
US4758869A (en) * | 1986-08-29 | 1988-07-19 | Waferscale Integration, Inc. | Nonvolatile floating gate transistor structure |
US4794565A (en) * | 1986-09-15 | 1988-12-27 | The Regents Of The University Of California | Electrically programmable memory device employing source side injection |
US5016215A (en) * | 1987-09-30 | 1991-05-14 | Texas Instruments Incorporated | High speed EPROM with reverse polarity voltages applied to source and drain regions during reading and writing |
US4905062A (en) * | 1987-11-19 | 1990-02-27 | Texas Instruments Incorporated | Planar famos transistor with trench isolation |
US5014097A (en) * | 1987-12-24 | 1991-05-07 | Waferscale Integration, Inc. | On-chip high voltage generator and regulator in an integrated circuit |
US4858185A (en) * | 1988-01-28 | 1989-08-15 | National Semiconductor Corporation | Zero power, electrically alterable, nonvolatile latch |
EP0326877B1 (en) * | 1988-02-05 | 1995-04-05 | Texas Instruments Incorporated | Electrically-erasable, electrically-programmable read-only memory cell |
DE68922005T2 (de) * | 1988-02-05 | 1995-08-10 | Texas Instruments Inc | Elektrisch löschbare und programmierbare Nur-Lesespeicherzelle. |
US4998220A (en) * | 1988-05-03 | 1991-03-05 | Waferscale Integration, Inc. | EEPROM with improved erase structure |
US5445980A (en) | 1988-05-10 | 1995-08-29 | Hitachi, Ltd. | Method of making a semiconductor memory device |
US5153144A (en) * | 1988-05-10 | 1992-10-06 | Hitachi, Ltd. | Method of making tunnel EEPROM |
US5198380A (en) * | 1988-06-08 | 1993-03-30 | Sundisk Corporation | Method of highly compact EPROM and flash EEPROM devices |
US5268318A (en) * | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
US5268319A (en) * | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
FR2634318B1 (fr) * | 1988-07-13 | 1992-02-21 | Commissariat Energie Atomique | Procede de fabrication d'une cellule de memoire integree |
US4958321A (en) * | 1988-09-22 | 1990-09-18 | Advanced Micro Devices, Inc. | One transistor flash EPROM cell |
US5016216A (en) * | 1988-10-17 | 1991-05-14 | Waferscale Integration, Inc. | Decoder for a floating gate memory |
JPH03209728A (ja) * | 1989-10-11 | 1991-09-12 | Mitsubishi Electric Corp | 半導体装置 |
US5036378A (en) * | 1989-11-01 | 1991-07-30 | At&T Bell Laboratories | Memory device |
JPH06120514A (ja) * | 1991-01-17 | 1994-04-28 | Texas Instr Inc <Ti> | 不揮発性メモリ・セル構造体とその製造法 |
US5396459A (en) * | 1992-02-24 | 1995-03-07 | Sony Corporation | Single transistor flash electrically programmable memory cell in which a negative voltage is applied to the nonselected word line |
JP3008812B2 (ja) * | 1995-03-22 | 2000-02-14 | 日本電気株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
KR100475719B1 (ko) * | 1997-06-30 | 2005-07-07 | 주식회사 하이닉스반도체 | 반도체장치의게이트전극 |
FR2769747B1 (fr) * | 1997-10-15 | 2001-10-05 | Sgs Thomson Microelectronics | Perfectionnement aux memoires non volatiles programmables par effet dit "de porteurs chauds" et effacables par effet tunnel |
WO2000001015A1 (fr) * | 1998-06-30 | 2000-01-06 | Sharp Kabushiki Kaisha | Dispositif semi-conducteur et son procede de fabrication |
JP2001093996A (ja) * | 1999-09-27 | 2001-04-06 | Toshiba Corp | 半導体装置の製造方法 |
US6384448B1 (en) | 2000-02-28 | 2002-05-07 | Micron Technology, Inc. | P-channel dynamic flash memory cells with ultrathin tunnel oxides |
US6249460B1 (en) * | 2000-02-28 | 2001-06-19 | Micron Technology, Inc. | Dynamic flash memory cells with ultrathin tunnel oxides |
US6639835B2 (en) | 2000-02-29 | 2003-10-28 | Micron Technology, Inc. | Static NVRAM with ultra thin tunnel oxides |
US7064034B2 (en) * | 2002-07-02 | 2006-06-20 | Sandisk Corporation | Technique for fabricating logic elements using multiple gate layers |
US7015111B2 (en) * | 2003-10-28 | 2006-03-21 | Micron Technology, Inc. | Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device |
US7057931B2 (en) * | 2003-11-07 | 2006-06-06 | Sandisk Corporation | Flash memory programming using gate induced junction leakage current |
JP2006344809A (ja) * | 2005-06-09 | 2006-12-21 | Toshiba Corp | 半導体装置及びその製造方法 |
US7374996B2 (en) * | 2005-11-14 | 2008-05-20 | Charles Kuo | Structured, electrically-formed floating gate for flash memories |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE7907193L (sv) * | 1978-09-28 | 1980-03-29 | Rca Corp | Bestendigt minne |
US4342099A (en) * | 1979-06-18 | 1982-07-27 | Texas Instruments Incorporated | Electrically erasable programmable MNOS read only memory |
US4267632A (en) * | 1979-10-19 | 1981-05-19 | Intel Corporation | Process for fabricating a high density electrically programmable memory array |
US4328565A (en) * | 1980-04-07 | 1982-05-04 | Eliyahou Harari | Non-volatile eprom with increased efficiency |
-
1980
- 1980-09-08 US US06/184,739 patent/US4409723A/en not_active Expired - Lifetime
-
1981
- 1981-05-05 DE DE19813117719 patent/DE3117719A1/de active Granted
- 1981-07-15 JP JP56109538A patent/JPS5750476A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
US4409723A (en) | 1983-10-18 |
DE3117719A1 (de) | 1982-04-01 |
JPS5750476A (en) | 1982-03-24 |
DE3117719C2 (US20080094685A1-20080424-C00004.png) | 1988-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0130315B2 (US20080094685A1-20080424-C00004.png) | ||
US4328565A (en) | Non-volatile eprom with increased efficiency | |
JP2631186B2 (ja) | メモリー装置 | |
KR100274491B1 (ko) | 스페이서 플래쉬 셀 공정 | |
US7157773B2 (en) | Nonvolatile semiconductor memory device | |
US5349221A (en) | Semiconductor memory device and method of reading out information for the same | |
US5150179A (en) | Diffusionless source/drain conductor electrically-erasable, electrically-programmable read-only memory and method for making and using the same | |
KR940006094B1 (ko) | 불휘발성 반도체 기억장치 및 그 제조방법 | |
US5029130A (en) | Single transistor non-valatile electrically alterable semiconductor memory device | |
US4561004A (en) | High density, electrically erasable, floating gate memory cell | |
US5278087A (en) | Method of making a single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate | |
US5173436A (en) | Method of manufacturing an EEPROM with trench-isolated bitlines | |
US4404577A (en) | Electrically alterable read only memory cell | |
US5444279A (en) | Floating gate memory device having discontinuous gate oxide thickness over the channel region | |
US4361847A (en) | Non-volatile EPROM with enhanced drain overlap for increased efficiency | |
US4972371A (en) | Semiconductor memory device | |
US5051795A (en) | EEPROM with trench-isolated bitlines | |
JPS62291180A (ja) | 電気的に変更できる持久記憶浮動ゲ−トメモリデバイス | |
US5340760A (en) | Method of manufacturing EEPROM memory device | |
US6388922B1 (en) | Semiconductor memory and method of operating semiconductor memory | |
US5604150A (en) | Channel-stop process for use with thick-field isolation regions in triple-well structures | |
JPH10189920A (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
US5461249A (en) | Nonvolatile semiconductor memory device and manufacturing method therefor | |
US6025229A (en) | Method of fabricating split-gate source side injection flash memory array | |
US5677876A (en) | Flash EEPROM with impurity diffused layer in channel area and process of production of same |