JPH01283883A - Light emitting diode and forming method for its electrode - Google Patents
Light emitting diode and forming method for its electrodeInfo
- Publication number
- JPH01283883A JPH01283883A JP63113133A JP11313388A JPH01283883A JP H01283883 A JPH01283883 A JP H01283883A JP 63113133 A JP63113133 A JP 63113133A JP 11313388 A JP11313388 A JP 11313388A JP H01283883 A JPH01283883 A JP H01283883A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- case
- resin
- plated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000007747 plating Methods 0.000 claims abstract description 20
- 238000005520 cutting process Methods 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 abstract description 20
- 239000011347 resin Substances 0.000 abstract description 20
- 238000007789 sealing Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明はリードレス型表面実装用発光ダイオードおよ
びその電極の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention This invention relates to a leadless surface mount light emitting diode and a method of forming its electrodes.
従来の技術
従来の表面実装用発光ダイオードの構造を第７図（ａ）
、 （ｂ）の平面図、断面図に示す。前記発光ダイオ
ードの製造方法をとしては、第７図（（２）に示すよう
に、まず、表面にＮ ｉ ／ Ａ ｇメッキを施したリ
ードフレーム１．１゛にインサート成形により、高耐熱
の熱可塑性樹脂反射ケース２が形成される。Conventional technology The structure of a conventional surface-mount light emitting diode is shown in Fig. 7(a).
, as shown in the plan view and cross-sectional view in (b). As shown in FIG. 7 ((2)), the light emitting diode is manufactured by insert molding a lead frame 1.1'' whose surface is plated with Ni/Ag to form a highly heat-resistant material. A plastic resin reflective case 2 is formed.
なお、このときの熱可塑性樹脂としては、表面実装時の
加熱に耐えるように熱変形温度が高い液晶ポリマー等が
使用されている。第７図（ａ） 、 （ｂ）に示すよう
に、リードフレーム１に発光ダイオードチップ３を銀（
Ａｇ）ペーストにより固定した後、金（Ａｕ）線５によ
りリードフレーム１゛と結線される。この後、反射ケー
ス２の内部は発光ダイオードの保護、光の取り出し効率
の向上のために透明エポキシ樹脂６で封止される。反射
ケースの外部のリードフレーム部は、表面実装に対応す
るために、例えば、第７図（ａ） 、 （ｂ）に示すよ
うな形状にカット及びベンドが行われる。電極端子１′
から１へ数１０ｍＡの電流を流すことにより発光ダイオ
ードチップ３が発光し、可視発光ランプとして動作する
。Note that, as the thermoplastic resin at this time, a liquid crystal polymer or the like is used, which has a high heat deformation temperature so as to withstand heating during surface mounting. As shown in FIGS. 7(a) and 7(b), a light emitting diode chip 3 is mounted on a lead frame 1 using silver (
After fixing with Ag) paste, it is connected to the lead frame 1' with a gold (Au) wire 5. Thereafter, the interior of the reflective case 2 is sealed with a transparent epoxy resin 6 to protect the light emitting diodes and improve light extraction efficiency. The lead frame portion outside the reflective case is cut and bent into the shape shown in FIGS. 7(a) and 7(b), for example, in order to support surface mounting. Electrode terminal 1'
By passing a current of several tens of milliamps from to 1, the light emitting diode chip 3 emits light and operates as a visible light emitting lamp.
発明が解決しようとする課題
しかし、前記発光ダイオードにおいてはリードフレーム
１，１゛と高耐熱性樹脂反射ケース２との密着力が弱い
ため、反射ケースとリードフレーム間に起因する問題、
たとえば界面からの封止樹脂漏れなどを生じることがあ
る。また、インサート成形を用いるために全型代や製品
単価が高（なるという欠点がある。Problems to be Solved by the Invention However, in the light emitting diode, the adhesion between the lead frames 1, 1'' and the highly heat-resistant resin reflective case 2 is weak, resulting in problems arising between the reflective case and the lead frame.
For example, sealing resin may leak from the interface. In addition, because insert molding is used, the total mold cost and product unit price are high.
課題を解決するための手段
本発明は前記問題点を解決するために、高耐熱性でメッ
キ可能な樹脂で反射ケースを射出成形し、前記反射ケー
スに立体パターンを有するＣｕ／ Ｎ ｉ ／ Ａ ｇ
メッキ処理を行うことにより配線パターン内蔵反射ケー
スを形成し、この配線パターン上に発光ダイオードを搭
載したものである。立体パターン形成方法としては、メ
ッキ終了後ダイヤモンドダイシングブレードにより切り
溝をいれることにより実施できる。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention injection molds a reflective case using a resin that is highly heat resistant and can be plated, and has a three-dimensional pattern on the reflective case using Cu/Ni/Ag.
A reflective case with a built-in wiring pattern is formed by plating, and a light emitting diode is mounted on the wiring pattern. The three-dimensional pattern can be formed by cutting grooves with a diamond dicing blade after plating.
作用
本発明の発光ダイオードにおいて、反射ケースのメッキ
が単に発光ダイオードチップのボンディングのみならず
、発光ダイオードチップと発光ダイオード外部との電気
的な接続までを実現するために、従来のような金属板の
成形によるリードフレームが不要となり、また表面実装
用の端子までを同時に形成する。たしかって、リードフ
レームと反射ケースの密着不良に関する問題が解決され
る。Function: In the light emitting diode of the present invention, the plating of the reflective case is not just a bonding of the light emitting diode chip, but also an electrical connection between the light emitting diode chip and the outside of the light emitting diode. A molded lead frame is no longer required, and even terminals for surface mounting can be formed at the same time. As a result, the problem of poor adhesion between the lead frame and the reflective case is solved.
実施例１
第１図（ａ） 、 （ｂ） 、 （ｃ）に完成品形状を
平面図、側面図、断面図で示す。第１図において７は被
メッキ性を有する熱可塑性樹脂であり、８，９．１０に
示す斜線部表面はＣｕ ／ Ｎ ｉ ／ Ａ ｇメッキ
が施されており、前記メッキはスルーホールを通して１
．１．１２の電極用メッキ端子と接続されている。メッ
キランド８では発光ダイオードチップ３がＡｇペースト
４により固定され、Ａｕ線５によりメッキランド９と結
線されている。なおメッキランド８，９の間には約０．
３ｍｍの幅で下地の熱可塑性樹脂がメッキされていない
状態でラインを形成している。この部分が立体絶縁パタ
ーンとなついる。反射ケースの内部は発光ダイオードの
保護、光の取り出し効率の向上のために透明エポキシ樹
脂６で封止されている。電極用メッキ端子１１から１２
へ数１０ｍＡの電流を流すことにより発光ダイオードチ
ップ３が発光し、可視発光ランプとして動作する。次に
前記発光ダイオードの製造方法について第２図（ａ）
、 （ｂ） 、 （（２）の工程順図を参照してのべる
。Example 1 Figures 1(a), 1(b) and 1(c) show the shape of a completed product in a plan view, side view, and sectional view. In FIG. 1, 7 is a thermoplastic resin that can be plated, and the surface of the shaded area shown in 8, 9, and 10 is plated with Cu/Ni/Ag.
．． It is connected to the plated terminal for the electrode of 1.12. The light emitting diode chip 3 is fixed on the plating land 8 with Ag paste 4 and connected to the plating land 9 with an Au wire 5. Note that there is approximately 0.0 mm between plated lands 8 and 9.
A line with a width of 3 mm is formed with the underlying thermoplastic resin not plated. This part is connected to the three-dimensional insulation pattern. The inside of the reflective case is sealed with transparent epoxy resin 6 to protect the light emitting diodes and improve light extraction efficiency. Electrode plated terminals 11 to 12
By passing a current of several tens of milliamps through the LED chip 3, the light emitting diode chip 3 emits light and operates as a visible light emitting lamp. Next, FIG. 2(a) shows the method for manufacturing the light emitting diode.
, (b) , (Refer to the process diagram of (2).
第２図（ａ）はメッキ前の射出成形樹脂基板の形状を示
す。熱可塑性のメッキ可能な樹脂としては耐熱性を考慮
して液晶ポリマーを用いる。成形基板は１個の樹脂基板
に多数個の発光ダイオード用反射ケース部分が形成され
ている。次に、第２図（ｂ）に示したようにメッキのマ
スキング用レジストパターン１３を形°成する。第２図
（ｂ）の天面ば凹部を有するため、立体レジストパター
ンとなっているが、このパターン形成方法としては、光
硬貨性レジストを用いると共に、マスキングパターンを
形成すべき樹脂成形体と雌雄関係の形状を有する透光性
の型を用いて露光し、立体的なマスキングパターンを完
成する方法が利用可能である。第２図（ｂ）の裏面は平
面であるため、テーピング等によってもマスキングパタ
ーンを作成することができる。FIG. 2(a) shows the shape of the injection molded resin substrate before plating. As the thermoplastic resin that can be plated, a liquid crystal polymer is used in consideration of its heat resistance. The molded substrate has a plurality of reflective case portions for light emitting diodes formed on one resin substrate. Next, as shown in FIG. 2(b), a resist pattern 13 for masking plating is formed. Since the top surface of FIG. 2(b) has a concave portion, it is a three-dimensional resist pattern.As for the method of forming this pattern, an optical coin type resist is used, and the resin molded body on which the masking pattern is to be formed and male and female A method is available in which a transparent mold having a related shape is exposed to light to complete a three-dimensional masking pattern. Since the back surface of FIG. 2(b) is a flat surface, a masking pattern can be created by taping or the like.
次に、洗浄→化学エツチング→湿潤化→触媒付与→無電
解Ｃｕメッキ→レジスト除去→電気Ｃｕメッキ→電気Ｎ
ｉメッキ→Ａｇメッキ処理の順に工程処理を施す。この
結果、第２図（（２）に示すような立体配線樹脂基板が
形成される。第２図（（２）において１４はレジスト除
去後の絶縁パターンを示す。Next, cleaning → chemical etching → wetting → catalyst application → electroless Cu plating → resist removal → electric Cu plating → electric N
Process treatment is performed in the order of i plating → Ag plating treatment. As a result, a three-dimensional wiring resin substrate as shown in FIG. 2 ((2)) is formed. In FIG. 2 ((2)), 14 indicates the insulation pattern after the resist is removed.
次に、前記樹脂基板のメッキランド８に発光ダイオード
チップ３をＡｇペースト４により固定した後、Ａｕ線５
によりメッキランド９と結線する。次に発光ダイオード
チップ３の固定された反射ケースの内部は透明エポキシ
樹脂６で封止される。最後に第２図（（２）の破線１６
に沿ってダイヤモンドダイシングブレードでカットし、
個々の発光ダイオードに分割する。この時スルーホール
１５も２分割される。本実施例においては、１個の樹脂
基板から２０個の発光ダイオードが作成されることにな
る。前記の方法で作成した発光ダイオードは従来のイン
サート成形法による発光ダイオードと比較して、成形金
型代、製品単価とも安くなり、またリードフレームと反
射ケース間における封止樹脂漏れ等を解決できる。Next, after fixing the light emitting diode chip 3 to the plating land 8 of the resin substrate with Ag paste 4, the Au wire 5
It is connected to the plated land 9 by. Next, the interior of the reflective case to which the light emitting diode chip 3 is fixed is sealed with a transparent epoxy resin 6. Finally, in Figure 2 (dotted line 16 in (2)
Cut with a diamond dicing blade along the
Split into individual light emitting diodes. At this time, the through hole 15 is also divided into two parts. In this example, 20 light emitting diodes are produced from one resin substrate. The light emitting diode produced by the above method is cheaper in terms of mold cost and product unit price than the light emitting diode produced by the conventional insert molding method, and can solve problems such as sealing resin leakage between the lead frame and the reflective case.
実施例２
第３図（ａ） 、 （ｂ） 、 （ｃ）に切り溝により
立体パターンを形成して作成した発光ダイオードを平面
図、側面図、断面図で示す。Example 2 FIGS. 3(a), 3(b), and 3(c) show a plan view, a side view, and a sectional view of a light emitting diode prepared by forming a three-dimensional pattern with grooves.
本実施例における発光ダイオードが実施例１の発光ダイ
オードと異なる点は、立体絶縁パターンが第３図に示す
ような切り溝１７によって構成されている点であり、そ
の他の構造と動作については実施例１と同゛様である。The light emitting diode of this embodiment differs from the light emitting diode of embodiment 1 in that the three-dimensional insulation pattern is constituted by grooves 17 as shown in FIG. It is similar to 1.
次に前記発光ダイオードの製造方法について述べる。Next, a method for manufacturing the light emitting diode will be described.
まず、第２図（ａ）の射出成形樹脂基板の裏面のみ実施
例１と同様にテーピング等によりマスキングを行なう。First, only the back side of the injection molded resin substrate shown in FIG. 2(a) is masked by taping or the like in the same manner as in Example 1.
次に実施例１と同様のメッキ処理を行った後、第４図に
示すような切り溝１７をダイヤモンドダイシングブレー
ドにより形成する。その後は、実施例１と同様に発光ダ
イオードチップボンド→Ａｕ線ボンド→エポキシ樹脂封
止→カット分割を行うことにより、第３図の発光ダイオ
ードが作成される。本実施例においては、実施例１と比
較してマスキング設備や工数削減の効果がある。Next, after performing the same plating process as in Example 1, grooves 17 as shown in FIG. 4 are formed using a diamond dicing blade. Thereafter, in the same manner as in Example 1, the light emitting diode shown in FIG. 3 is produced by carrying out the following steps: light emitting diode chip bond → Au wire bond → epoxy resin sealing → cut division. This embodiment has the effect of reducing masking equipment and man-hours compared to the first embodiment.
実施例３
第５図は第４図の樹脂基板の裏面マスキング形状とカッ
ト分割方法を変えることにより作成した一体形多連発光
ダイオードを示す。このように本発明の応用により新規
の金型を作成することなく、カッティング方法を変更す
ることにより任意の一体形多連発光ダイオードを作成で
きる。Example 3 FIG. 5 shows an integrated multiple light emitting diode fabricated by changing the back masking shape and cutting division method of the resin substrate shown in FIG. 4. In this way, by applying the present invention, any integrated multiple light emitting diode can be created by changing the cutting method without creating a new mold.
実施例４
第６図は反射ケースの凹部をパラボラ形状にして指向性
を高（したものである。このように１本発明の応用によ
りインサート成形を用いた従来品と比較して種々の形状
のものを容易に作成でき、成形金型代や製品単価も安い
ため、表面実装用カスタム発光ダイオードの作成を行う
うえで大きなメリットがある。Embodiment 4 Figure 6 shows a reflection case in which the concave part is made into a parabolic shape to improve directivity.In this way, by applying the present invention, various shapes can be obtained compared to conventional products using insert molding. It is easy to create products, and the cost of molding molds and product unit prices are low, so it has great advantages when creating custom light-emitting diodes for surface mounting.
発明の効果
以上のように本発明によれば、被メッキ性を有する樹脂
で反射ケースを構成し、前記反射ケースに立体パターン
を有するメッキ処理を施した後、発光ダイオードチップ
を搭載してリードレスの発光ダイオードとすることによ
り反射ケースとリードフレーム間における封止樹脂漏れ
等に関する問題を解決できる。さらに、１個の樹脂基板
に多数個の発光ダイオード用反射ケースを形成し、カッ
ト分割方法を変えることにより任意の多連発光ダイオー
ドを作成できる。また、インサート成形を用いた従来品
と比較して全型代や製品単価が安（なるため、表面゛実
装用カスタム発光ダイオードの作成を行ううえで大きな
メリットがある。Effects of the Invention As described above, according to the present invention, a reflective case is made of a resin that can be plated, and after the reflective case is plated with a three-dimensional pattern, a light emitting diode chip is mounted thereon to form a leadless structure. By using this light emitting diode, problems such as sealing resin leakage between the reflective case and the lead frame can be solved. Furthermore, by forming a large number of reflective cases for light emitting diodes on one resin substrate and changing the cutting and dividing method, arbitrary multiple light emitting diodes can be created. In addition, compared to conventional products using insert molding, the total mold cost and unit price of the product are lower (lower), which is a major advantage when creating custom light-emitting diodes for surface mounting.
第１図（ａ） 、 （ｂ） 、 （（２）は本発明の実
施例１における発光ダイオード平面図、側面図、断面図
、第２図（ａ） 、 （ｂ） Ｔ （ｃ）は実施例１に
おける各製造段階における工程順図、第３図（ａ） 、
（ｂ） 、 （（２）は本発明の実施例２における発
光ダイオード平面図、側面図、断面図、第４図は実施例
２の製造段階における成形樹脂基板の状態図、第５図は
実施例３における一体形多連発光ダイオード外形図、第
６図は実施例４におけるパラボラ形発光ダイオード外形
図、第７図（ａ） 、 （ｂ） 、 （ｃ）は従来の発
光ダイオードの平面図。
個所面図製造段階での状態平面図である。
１．１゛・・・・・・リードフレーム、２・・・・・・
反射ケース、３・・・・・・発光ダイオードチップ、４
・・・・・・Ａｇペースト５・・・・・・Ａｕ線、６・
・・・・・透明エポキシ樹脂、７・・・・・・被メッキ
性を有する樹脂、８．９・・・・・・ボンディング用メ
ッキランド、１０・・・・・・メッキ面、１１．１２・
・・・・・電極用メッキ端子、１３・・・・・・レジス
トパターン、１４・・・・・・絶縁パターン、１５・・
・・・・スルーホール、１６・・・・・・カッティング
ライン、１７・・・・・・切り溝。
代理人の氏名 弁理士 中尾敏男 ほか１名第１図
（（１−） （ｂ）
（すｔｓ２図
（ａ〕
第 ２ 図
（ｂン
第 ２ 因
（（２）
第３図
（とＬ） （ｂン
（（２）第 ４ 図
第５図
第６図
第７図
（（Ｌ） （１，）／ＺFigure 1 (a), (b), ((2) is a plan view, side view, and cross-sectional view of a light emitting diode in Example 1 of the present invention, Figure 2 (a), (b), and (c) are diagrams showing the implementation. Process sequence diagram at each manufacturing stage in Example 1, Figure 3(a),
(b), ((2) is a plan view, side view, and cross-sectional view of a light emitting diode in Example 2 of the present invention, FIG. 4 is a state diagram of a molded resin substrate at the manufacturing stage of Example 2, and FIG. FIG. 6 is an outline diagram of an integrated multiple light emitting diode in Example 3, FIG. 6 is an outline diagram of a parabolic light emitting diode in Example 4, and FIGS. 7(a), (b), and (c) are plan views of conventional light emitting diodes. It is a state plan view at the manufacturing stage. 1.1゛...Lead frame, 2...
Reflective case, 3... Light emitting diode chip, 4
...Ag paste 5 ...Au wire, 6.
...Transparent epoxy resin, 7...Resin with plating properties, 8.9...Plating land for bonding, 10...Plating surface, 11.12・
...Plated terminal for electrode, 13...Resist pattern, 14...Insulation pattern, 15...
...through hole, 16...cutting line, 17...cut groove. Name of agent: Patent attorney Toshio Nakao and one other person Figure 1 ((1-) (b)
(Sts2 figure (a)) Figure 2 (b) 2nd cause ((2) Figure 3 (and L) (b)
((2) Figure 4 Figure 5 Figure 6 Figure 7 ((L) (1,)/Z
Claims (2)
ーンのメッキ電極部を設け、前記電極部に発光ダイオー
ドチップを搭載したことを特徴とする発光ダイオード。(1) A light emitting diode, characterized in that a plated electrode part with a three-dimensional pattern is provided on the concave part of a reflective case having a concave surface, and a light emitting diode chip is mounted on the electrode part.
ーンのメッキ層を形成したのち、前記メッキ層にダイヤ
モンドダンシングブレードにより切り溝を入れ、同メッ
キ層を電極部に分離する工程をそなえたことを特徴とす
る発光ダイオード用電極の形成方法。(2) A step of forming a plating layer with a three-dimensional pattern on the concave portion of the reflective case having a concave surface, and then cutting grooves in the plating layer with a diamond dancing blade to separate the plating layer into electrode portions. A method for forming an electrode for a light emitting diode, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63113133A JP2574388B2 (en) | 1988-05-10 | 1988-05-10 | Light emitting diode and method of forming electrode thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63113133A JP2574388B2 (en) | 1988-05-10 | 1988-05-10 | Light emitting diode and method of forming electrode thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01283883A true JPH01283883A (en) | 1989-11-15 |
| JP2574388B2 JP2574388B2 (en) | 1997-01-22 |
Family
ID=14604385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63113133A Expired - Lifetime JP2574388B2 (en) | 1988-05-10 | 1988-05-10 | Light emitting diode and method of forming electrode thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2574388B2 (en) |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0477269U (en) * | 1990-11-19 | 1992-07-06 | ||
| JPH0497366U (en) * | 1991-01-17 | 1992-08-24 | ||
| JPH04107861U (en) * | 1991-02-28 | 1992-09-17 | サンケン電気株式会社 | light emitting display device |
| JPH0529659A (en) * | 1991-07-23 | 1993-02-05 | Sharp Corp | Side liminous type led lamp and manufacture thereof |
| US5291038A (en) * | 1990-12-19 | 1994-03-01 | Sharp Kabushiki Kaisha | Reflective type photointerrupter |
| JPH06207772A (en) * | 1993-01-08 | 1994-07-26 | Toshiba Corp | Refrigerator |
| JPH0936432A (en) * | 1995-07-17 | 1997-02-07 | Sharp Corp | Lateral emission led and manufacture thereof |
| EP0921568A2 (en) | 1997-11-25 | 1999-06-09 | Matsushita Electric Works, Ltd. | LED Luminaire |
| DE4242842C2 (en) * | 1992-02-14 | 1999-11-04 | Sharp Kk | Light-emitting component for surface mounting and method for its production |
| EP0911886A3 (en) * | 1997-10-23 | 2000-09-27 | Siemens Aktiengesellschaft | Optoelectronic device and manufacturing method |
| WO2000079605A1 (en) * | 1999-06-23 | 2000-12-28 | Citizen Electronics Co., Ltd. | Light emitting diode |
| JP2001024236A (en) * | 1999-07-13 | 2001-01-26 | Sanken Electric Co Ltd | Semiconductor light emitting device |
| JP2001036147A (en) * | 1999-07-22 | 2001-02-09 | Nichia Chem Ind Ltd | Light emitting diode |
| JP2005277380A (en) * | 2004-02-23 | 2005-10-06 | Stanley Electric Co Ltd | Led and its manufacturing method |
| JP2006210724A (en) * | 2005-01-28 | 2006-08-10 | Sumitomo Electric Ind Ltd | Injection molded circuit component, window frame and package for light emitting diode using same, and manufacturing method the component |
| US7126163B2 (en) | 2001-02-26 | 2006-10-24 | Sharp Kabushiki Kaisha | Light-emitting diode and its manufacturing method |
| JP2008153698A (en) * | 2008-03-07 | 2008-07-03 | Matsushita Electric Ind Co Ltd | Surface-mounting photoelectric conversion device |
| JP2009009956A (en) * | 2007-06-26 | 2009-01-15 | Panasonic Corp | Package for semiconductor light emitting device, and semiconductor light emitting apparatus |
| JP2009135535A (en) * | 2003-02-25 | 2009-06-18 | Kyocera Corp | Multipiece substrate, package and light emitting device |
| JP2010182770A (en) * | 2009-02-04 | 2010-08-19 | Apic Yamada Corp | Led package, method of manufacturing the same and mold |
| US8062765B2 (en) | 2006-07-06 | 2011-11-22 | Panasonic Electric Works, Ltd. | Silver layer formed by electrosilvering substrate material |
| JP2016006836A (en) * | 2014-06-20 | 2016-01-14 | 大日本印刷株式会社 | Light emitting diode substrate manufacturing method and lighting device manufacturing method |
| JPWO2019160062A1 (en) * | 2018-02-16 | 2021-02-12 | 京セラ株式会社 | Multi-cavity element storage package and multi-capture optical semiconductor device |
| WO2021261061A1 (en) * | 2020-06-26 | 2021-12-30 | ローム株式会社 | Electronic component and method for manufacturing electronic component |
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| JPS60171747A (en) * | 1984-02-17 | 1985-09-05 | Hitachi Micro Comput Eng Ltd | Semiconductor device |
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| JPS5886748A (en) * | 1981-11-18 | 1983-05-24 | Nec Corp | Substrate forming chip carrier group |
| JPS6043040A (en) * | 1983-08-15 | 1985-03-07 | Hitachi Ltd | Cooling air partition plate of rotary electric machine |
| JPS60171747A (en) * | 1984-02-17 | 1985-09-05 | Hitachi Micro Comput Eng Ltd | Semiconductor device |
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Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0477269U (en) * | 1990-11-19 | 1992-07-06 | ||
| US5291038A (en) * | 1990-12-19 | 1994-03-01 | Sharp Kabushiki Kaisha | Reflective type photointerrupter |
| JPH0497366U (en) * | 1991-01-17 | 1992-08-24 | ||
| JPH04107861U (en) * | 1991-02-28 | 1992-09-17 | サンケン電気株式会社 | light emitting display device |
| JPH0529659A (en) * | 1991-07-23 | 1993-02-05 | Sharp Corp | Side liminous type led lamp and manufacture thereof |
| DE4242842C2 (en) * | 1992-02-14 | 1999-11-04 | Sharp Kk | Light-emitting component for surface mounting and method for its production |
| JPH06207772A (en) * | 1993-01-08 | 1994-07-26 | Toshiba Corp | Refrigerator |
| JPH0936432A (en) * | 1995-07-17 | 1997-02-07 | Sharp Corp | Lateral emission led and manufacture thereof |
| EP0911886A3 (en) * | 1997-10-23 | 2000-09-27 | Siemens Aktiengesellschaft | Optoelectronic device and manufacturing method |
| EP0921568A2 (en) | 1997-11-25 | 1999-06-09 | Matsushita Electric Works, Ltd. | LED Luminaire |
| US6331063B1 (en) | 1997-11-25 | 2001-12-18 | Matsushita Electric Works, Ltd. | LED luminaire with light control means |
| WO2000079605A1 (en) * | 1999-06-23 | 2000-12-28 | Citizen Electronics Co., Ltd. | Light emitting diode |
| US6914267B2 (en) | 1999-06-23 | 2005-07-05 | Citizen Electronics Co. Ltd. | Light emitting diode |
| JP2001024236A (en) * | 1999-07-13 | 2001-01-26 | Sanken Electric Co Ltd | Semiconductor light emitting device |
| JP2001036147A (en) * | 1999-07-22 | 2001-02-09 | Nichia Chem Ind Ltd | Light emitting diode |
| US7126163B2 (en) | 2001-02-26 | 2006-10-24 | Sharp Kabushiki Kaisha | Light-emitting diode and its manufacturing method |
| JP2009135535A (en) * | 2003-02-25 | 2009-06-18 | Kyocera Corp | Multipiece substrate, package and light emitting device |
| JP2005277380A (en) * | 2004-02-23 | 2005-10-06 | Stanley Electric Co Ltd | Led and its manufacturing method |
| JP4572312B2 (en) * | 2004-02-23 | 2010-11-04 | スタンレー電気株式会社 | LED and manufacturing method thereof |
| JP2006210724A (en) * | 2005-01-28 | 2006-08-10 | Sumitomo Electric Ind Ltd | Injection molded circuit component, window frame and package for light emitting diode using same, and manufacturing method the component |
| US8062765B2 (en) | 2006-07-06 | 2011-11-22 | Panasonic Electric Works, Ltd. | Silver layer formed by electrosilvering substrate material |
| JP2009009956A (en) * | 2007-06-26 | 2009-01-15 | Panasonic Corp | Package for semiconductor light emitting device, and semiconductor light emitting apparatus |
| JP2008153698A (en) * | 2008-03-07 | 2008-07-03 | Matsushita Electric Ind Co Ltd | Surface-mounting photoelectric conversion device |
| JP2010182770A (en) * | 2009-02-04 | 2010-08-19 | Apic Yamada Corp | Led package, method of manufacturing the same and mold |
| JP2016006836A (en) * | 2014-06-20 | 2016-01-14 | 大日本印刷株式会社 | Light emitting diode substrate manufacturing method and lighting device manufacturing method |
| JPWO2019160062A1 (en) * | 2018-02-16 | 2021-02-12 | 京セラ株式会社 | Multi-cavity element storage package and multi-capture optical semiconductor device |
| WO2021261061A1 (en) * | 2020-06-26 | 2021-12-30 | ローム株式会社 | Electronic component and method for manufacturing electronic component |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2574388B2 (en) | 1997-01-22 |
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