JPH04107861U - light emitting display device - Google Patents

light emitting display device

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Publication number
JPH04107861U
JPH04107861U JP1833891U JP1833891U JPH04107861U JP H04107861 U JPH04107861 U JP H04107861U JP 1833891 U JP1833891 U JP 1833891U JP 1833891 U JP1833891 U JP 1833891U JP H04107861 U JPH04107861 U JP H04107861U
Authority
JP
Japan
Prior art keywords
light emitting
recess
wiring conductor
emitting diode
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1833891U
Other languages
Japanese (ja)
Inventor
明 鈴木
Original Assignee
サンケン電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by サンケン電気株式会社 filed Critical サンケン電気株式会社
Priority to JP1833891U priority Critical patent/JPH04107861U/en
Publication of JPH04107861U publication Critical patent/JPH04107861U/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

(57)【要約】 【目的】 発光ダイオードの輝度及び指向性を高めると
共に、吸引コレット30による吸引を容易且つ確実にす
る。 【構成】 基板11に傾斜壁面16を有する凹部15を
設け、この傾斜壁面16に光反射性配線導体18、19
を設ける。凹部15を充填する部分を有する他に、基板
11よりも突出している台座部14aとレンズ部14b
を有する光透過性樹脂封止体14を設ける。コレット3
0による吸引を可能にするために、レンズ部14bを台
座部14aの内側に配置する。
(57) [Summary] [Purpose] To increase the brightness and directivity of a light emitting diode, and to facilitate and ensure suction by the suction collet 30. [Structure] A recess 15 having an inclined wall surface 16 is provided in the substrate 11, and light reflective wiring conductors 18 and 19 are provided on the inclined wall surface 16.
will be established. In addition to having a portion filling the recess 15, a pedestal portion 14a and a lens portion 14b protrude beyond the substrate 11.
A light-transmissive resin encapsulant 14 is provided. colette 3
In order to enable suction by zero, the lens portion 14b is arranged inside the pedestal portion 14a.

Description

【考案の詳細な説明】[Detailed explanation of the idea]

【0001】0001

【産業上の利用分野】[Industrial application field]

本考案は光刺激性の大きい表面実装形の発光表示装置に関する。 The present invention relates to a surface-mounted light emitting display device that is highly photostimulable.

【0002】0002

【従来の技術】[Conventional technology]

従来の表面実装形の発光ダイオードは図6に示すように、絶縁性基板1と、こ の上に配設された配線導体5、6と、発光ダイオードチップ2と、リード細線3 と、光透過性の樹脂封止体4から構成される。配線導体5、6の先端側は基板1 の裏面まで延在して接続電極を形成している。従って、図6の発光ダイオードは 基板1の裏面を下側にして表面実装することができる。 As shown in FIG. 6, a conventional surface-mounted light emitting diode has an insulating substrate 1 and an insulating substrate 1. Wiring conductors 5 and 6 arranged above, light emitting diode chip 2, and thin lead wire 3 and a light-transmissive resin sealing body 4. The tip side of the wiring conductors 5 and 6 is the substrate 1 The connection electrode is formed by extending to the back surface of the electrode. Therefore, the light emitting diode in Figure 6 is Surface mounting can be performed with the back surface of the substrate 1 facing downward.

【0003】 今日、この種の表面実装形の発光ダイオードにおいても高輝度化が強く要求さ れている。これを実現する手段として、基板1の上面に発光ダイオードチップ2 を囲むように反射板(リフレクタ)を配設する構造が公知となっている。この構 造によれば、図6の発光ダイオードに比べて高輝度化はできる。しかし、別体の リフレクタを備えた分、装置が大型化する欠点があった。この種の問題を解決す るために、本考案者は基板1の発光ダイオードチップ2が配設される部分に傾斜 壁を有する凹部を形成し、凹部の傾斜壁に反射板を兼ねる配線導体を配設した発 光ダイオードの製作を試みた。該発光ダイオードによれば高輝度化が実現できる し、別体のリフレクタを必要としないから装置が大型化することもない。0003 Today, there is a strong demand for higher brightness even for this type of surface-mounted light emitting diode. It is. As a means of realizing this, a light emitting diode chip 2 is placed on the top surface of the substrate 1. A structure in which a reflector is disposed to surround the reflector is known. This structure According to the company, higher brightness can be achieved compared to the light emitting diode shown in FIG. However, a separate The disadvantage is that the device becomes larger due to the reflector. to solve this kind of problem In order to achieve this, the inventor of the present invention provided an inclined part of the substrate 1 where the light emitting diode chip 2 is disposed. A recess with walls is formed, and a wiring conductor that also serves as a reflector is arranged on the sloped wall of the recess. I tried to make a photodiode. High brightness can be achieved with this light emitting diode. However, since a separate reflector is not required, the device does not become bulky.

【0004】0004

【考案が解決しようとする課題】[Problem that the idea aims to solve]

ところで、回路基板に対する装着を能率的且つ確実に行うことができる発光表 示装置が要求されている。 By the way, there is a light-emitting table that can be mounted on a circuit board efficiently and reliably. display device is required.

【0005】 従って、本考案の目的は、高輝度化及び高指向性化を達成することができると 共に、回路基板に対する装着を能率的且つ確実に行うことができる発光表示装置 を提供することにある。[0005] Therefore, the purpose of the present invention is to achieve high brightness and high directivity. Both are light emitting display devices that can be mounted on circuit boards efficiently and reliably. Our goal is to provide the following.

【0006】[0006]

【課題を解決するための手段】[Means to solve the problem]

上記目的を達成するための本考案は、絶縁性基板と発光素子とリード細線と光 透過性の樹脂封止体とを有し、前記絶縁性基板の一方の主面には凹部が形成され ており、前記凹部の底面及び壁面には光反射性を有し且つ互いに電気的に分離さ れた第1の配線導体及び第2の配線導体が形成されており、前記発光素子の下面 側の電極が前記底面において前記第1の配線導体に固着されており、前記発光素 子の上面側の電極が前記リード細線を介して前記第2の配線導体に電気的に接続 されており、前記樹脂封止体は前記第1の配線導体と第2の配線導体との間に形 成された分離領域と前記発光素子と前記リード細線とを被覆するように前記凹部 を充填する部分と、前記絶縁性基板の上面よりも突出し且つ平坦面を有するよう に形成された台座部と、平面的に見て前記台座部の内側に配設され且つ前記発光 素子のためのレンズ作用が生じるように形成されたレンズ部とを有していること を特徴とする発光表示装置に係わるものである。 To achieve the above purpose, this invention consists of an insulating substrate, a light emitting element, a thin lead wire, and a light emitting element. a transparent resin encapsulant, and a recess is formed on one main surface of the insulating substrate. The bottom and wall surfaces of the recess have light reflective properties and are electrically isolated from each other. A first wiring conductor and a second wiring conductor are formed on the lower surface of the light emitting element. A side electrode is fixed to the first wiring conductor on the bottom surface, and a side electrode is fixed to the first wiring conductor on the bottom surface, and The electrode on the upper surface side of the child is electrically connected to the second wiring conductor via the lead thin wire. The resin encapsulant is formed between the first wiring conductor and the second wiring conductor. the recess so as to cover the separated region formed, the light emitting element, and the thin lead wire; and a portion that protrudes from the upper surface of the insulating substrate and has a flat surface. a pedestal portion formed in the pedestal portion; and a lens portion formed to produce a lens action for the element. The present invention relates to a light emitting display device characterized by:

【0007】[0007]

【作用】[Effect]

本考案によれば、凹部の底面及び壁面に形成された第1及び第2の配線導体が 反射板として機能するので、高輝度化が実現される。また、光透過性の樹脂封止 体のレンズ部によって指向性を任意に設定できる。結果として、光刺激性の大き い発光表示装置が実現できる。樹脂封止体は台座部を有し、この内側にレンズ部 が設けられているので、台座部に真空吸引装置(コレット)を当てて発光表示装 置を吸引することができる。従って、配線導体を損傷することなしに、発光表示 装置を能率的且つ確実に吸引することができる。 According to the present invention, the first and second wiring conductors formed on the bottom and wall surfaces of the recess are Since it functions as a reflector, high brightness is achieved. Also, optically transparent resin sealing The directivity can be set arbitrarily depending on the lens part of the body. As a result, the photoirritability increases This makes it possible to realize a light-emitting display device. The resin sealing body has a pedestal part, and a lens part is placed inside this pedestal part. Since a vacuum suction device (collet) is applied to the pedestal, the light emitting display device is The position can be aspirated. Therefore, luminescent display can be performed without damaging the wiring conductor. The device can be efficiently and reliably suctioned.

【0008】[0008]

【実施例】【Example】

次に、図1〜図5を参照して本考案の一実施例に係わる表面実装形の発光ダイ オードを説明する。 本実施例の発光ダイオードは、図1に示すように、絶縁性基板11と、発光ダ イオードチップ12と、リード細線13と、光透過性の樹脂封止体14から構成 されている。平面形状長方形の絶縁性基板11は耐熱性及び成形性に優れた超高 機能樹脂や液晶ポリマー等から成り、周知の樹脂成形法によって形成されている 。絶縁性基板11の略中央部に形成された凹部15は傾斜壁面16を有しており 、この壁面16の傾斜角は底面17を含む平面に対して約45度となっている。 なお、この傾斜角は良好な反射を得るために40〜50度の範囲にするのがよい 。 Next, referring to FIGS. 1 to 5, a surface-mounted light emitting diode according to an embodiment of the present invention will be described. Explain the ode. As shown in FIG. 1, the light emitting diode of this embodiment includes an insulating substrate 11 and a light emitting diode. Consists of an iode chip 12, a thin lead wire 13, and a light-transmissive resin encapsulant 14 has been done. The insulating substrate 11, which has a rectangular planar shape, has an ultra-high heat resistance and moldability. It is made of functional resin, liquid crystal polymer, etc., and is formed using a well-known resin molding method. . A recess 15 formed approximately at the center of the insulating substrate 11 has an inclined wall surface 16. The angle of inclination of this wall surface 16 is about 45 degrees with respect to the plane including the bottom surface 17. Note that this angle of inclination is preferably in the range of 40 to 50 degrees to obtain good reflection. .

【0009】 絶縁性基板11の凹部15には、光反射性を有する第1の配線導体(電極層) 18と第2の配線導体(電極層)19が形成されている。第1の配線導体18と 第2の配線導体19は絶縁性基板11の短辺方向の中心線に沿う分離領域20を 介して電気的に分離されている。凹部15の壁面16及び底面17は分離領域2 0を除いて配線導体18、19に被覆されている。[0009] In the recess 15 of the insulating substrate 11, a first wiring conductor (electrode layer) having light reflectivity is provided. 18 and a second wiring conductor (electrode layer) 19 are formed. The first wiring conductor 18 and The second wiring conductor 19 has a separation region 20 along the center line in the short side direction of the insulating substrate 11. electrically isolated via The wall surface 16 and bottom surface 17 of the recess 15 are the separation area 2 All but 0 are covered with wiring conductors 18 and 19.

【0010】 絶縁性基板11の長辺方向の両端には切欠部21、22が形成されている。一 方の切欠部22は平面的に見て円弧状になっており、他方の切欠部21は平面的 に見て矩形状になっている。第1及び第2の配線導体18、19はそれぞれ切欠 部21、22の壁面を通って絶縁性基板11の裏面側に延在して、図4に示すよ うに接続用電極23、24を構成する。第1及び第2の配線導体18、19は、 絶縁性基板11側から厚さ約10μmの銅層、厚さ約25μmのニッケル層、厚 さ約5μmの銀層が順次メッキされて成る3層の光反射性を有する金属層となっ ている。0010 Notches 21 and 22 are formed at both ends of the insulating substrate 11 in the long side direction. one One notch 22 has an arc shape when viewed from above, and the other notch 21 has a planar shape. It is rectangular in shape. The first and second wiring conductors 18 and 19 each have a notch. As shown in FIG. The sea urchin connection electrodes 23 and 24 are configured. The first and second wiring conductors 18 and 19 are From the insulating substrate 11 side, a copper layer with a thickness of about 10 μm, a nickel layer with a thickness of about 25 μm, a thickness of It becomes a three-layer metal layer with light reflective properties, which is made by sequentially plating silver layers with a thickness of about 5 μm. ing.

【0011】 発光ダイオードチップ12の下面側電極(カソード電極)は凹部15の底面1 7において第1の配線導体18に固着されている。発光ダイオードチップ12の 上面に形成された透明電極は、リード細線13を介して第2の配線導体19に電 気的に接続されている。[0011] The lower surface side electrode (cathode electrode) of the light emitting diode chip 12 is connected to the bottom surface 1 of the recess 15. 7, it is fixed to the first wiring conductor 18. light emitting diode chip 12 The transparent electrode formed on the upper surface is electrically connected to the second wiring conductor 19 via the thin lead wire 13. physically connected.

【0012】 樹脂封止体14は光透過性のエポキシ樹脂から成り、周知のトランスファモー ルド法によって形成されている。樹脂封止体14は、図1から特に明らかなよう に台座部14aとレンズ部14bを有し、凹部15を充填して発光ダイオードチ ップ12とリード細線13を被覆する。図1に示すように、平坦な表面を有する 台座部14aは絶縁性基板11の長辺方向の両端側の一部、即ち、切欠部21、 22の形成された側の一部を除いて絶縁性基板11の表面を被覆する。レンズ部 14bは平面的に見てその中心点が発光ダイオードチップ12の上面に位置する ように形成されており、台座部14aの内側に配設されている。0012 The resin sealing body 14 is made of a light-transmitting epoxy resin, and is made of a well-known transfer mode. It is formed by the rudo method. As is particularly clear from FIG. It has a pedestal part 14a and a lens part 14b, and the recess 15 is filled with a light emitting diode chip. The cap 12 and the thin lead wire 13 are coated. with a flat surface, as shown in Figure 1 The pedestal portion 14a is a part of both ends of the insulating substrate 11 in the long side direction, that is, the cutout portion 21, The surface of the insulating substrate 11 is coated except for a part of the side where the insulating substrate 22 is formed. Lens section The center point of 14b is located on the top surface of the light emitting diode chip 12 when viewed from above. It is formed like this and is arranged inside the pedestal part 14a.

【0013】 上記の発光ダイオードは多数個の凹部が形成された多連個取りの絶縁性基板に 発光ダイオードチップ及びリード細線を配設し、トランスファモールド法によっ て図2の絶縁性基板11の短辺方向に延びるように樹脂封止体を形成し、後にこ れをダイシングして個別化することによって製作する。従って、この実施例では 凹部15が1個のみ形成された単チップ単発光色の発光ダイオードを示したが、 凹部15の個数は任意に選択し、複合化発光ダイオードとすることができる。[0013] The above light emitting diode is made of an insulating substrate with multiple cavities formed in it. A light emitting diode chip and thin lead wires are arranged, and the transfer molding method is used. A resin sealing body is formed so as to extend in the short side direction of the insulating substrate 11 shown in FIG. It is manufactured by dicing and individualizing it. Therefore, in this example Although a single-chip single-color light-emitting diode in which only one concave portion 15 is formed is shown, The number of recesses 15 can be selected arbitrarily to form a composite light emitting diode.

【0014】 本実施例の発光ダイオードにおいて、発光ダイオードチップ12から放射され た光の通路は主としてチップ12の上面から放射されて上方に向う第1の径路と 、チップ12の側面から放射されて凹部15の側壁で反射して上方に向う第2の 径路に分けられる。ここで、第1及び第2の配線導体18、19は、発光ダイオ ードチップ12の放射する波長領域の光に対する光反射率が絶縁性基板11のそ れに比べて十分に大きい。このため、凹部15の壁面は光反射率の大きい反射板 として機能する。従って、上記の第2の径路の光の量を増大でき、結果として高 輝度化が可能となっている。[0014] In the light emitting diode of this embodiment, the light emitted from the light emitting diode chip 12 is The path of the light is mainly a first path emitted from the top surface of the chip 12 and directed upward. , a second radiation emitted from the side surface of the chip 12, reflected by the side wall of the recess 15, and directed upward. Divided into routes. Here, the first and second wiring conductors 18 and 19 are connected to light emitting diodes. The light reflectance of the insulating substrate 11 for light in the wavelength range emitted by the hard chip 12 is It is sufficiently large compared to this. Therefore, the wall surface of the recess 15 is a reflective plate with a high light reflectance. functions as Therefore, the amount of light in the second path can be increased, resulting in a high Brightness can be increased.

【0015】 更に、本実施例のダイオードでは樹脂封止体14のレンズ部14bの中心が平 面的に見てチップ12の中心と一致するように配設されている。このため、レン ズ部14bのレンズ作用が有効に得られ、鋭い指向性が得られる。結果として、 光刺激性の高い発光ダイオードが得られる。勿論、本実施例の発光ダイオードで は別体のリフレクタを必要としないから、装置が大型化することはない。[0015] Furthermore, in the diode of this embodiment, the center of the lens portion 14b of the resin sealing body 14 is flat. It is arranged so as to coincide with the center of the chip 12 when viewed from the surface. For this reason, the lens The lens action of the lens portion 14b can be effectively obtained, and sharp directivity can be obtained. as a result, A light emitting diode with high photostimulability can be obtained. Of course, the light emitting diode of this example does not require a separate reflector, so the device does not become bulky.

【0016】 発光ダイオードを回路基板(図示せず)上に装着する時には、図3で破線で示 すコレット(吸引装置)30の先端を台座部14aの上面に当て、コレット30 の凹部31にレンズ部14bを収容させ、真空吸引する。これにより、レンズ部 14bに無関係に発光ダイオードを確実に吸引することができる。また、コレッ ト30の先端が配線導体18、19に接触しないので、これ等の損傷が生じない 。[0016] When mounting the light emitting diode on a circuit board (not shown), Place the tip of the collet (suction device) 30 on the top surface of the pedestal 14a, and The lens portion 14b is accommodated in the recess 31, and vacuum suction is applied. This allows the lens section to The light emitting diode can be reliably attracted regardless of 14b. Also, this Since the tip of the wire 30 does not touch the wiring conductors 18 and 19, such damage does not occur. .

【0017】[0017]

【変形例】[Modified example]

本考案は上述の実施例に限定されるものでなく、例えば次の変形が可能なもの である。 (1) 凹部15の壁面16の傾斜角を底面17側から段階的に増大させても 良い。これによって、装置の平面サイズを小さくすることができる。この場合、 チップ12の側面に対向する部分の傾斜角は40〜50度にするのが望ましい。 (2) レンズ部14bの形状は要求される用途によって種々変形できる。例 えば、円柱状や回転楕円形状にしても良い。 (3) レンズ部14bと台座部14aの間に環状の溝を形成して、レンズ部 14bの下側を台座部14aの上面よりも下方に配設しても良い。但し、この場 合もコレットによる吸着を良好に行えるようにするためレンズ部14bの上側を 台座部14aの上面よりも突出させるのが望ましい。 The present invention is not limited to the above-mentioned embodiments, but can be modified as follows, for example. It is. (1) Even if the inclination angle of the wall surface 16 of the recess 15 is gradually increased from the bottom surface 17 side, good. This allows the planar size of the device to be reduced. in this case, It is desirable that the inclination angle of the portion facing the side surface of the chip 12 is 40 to 50 degrees. (2) The shape of the lens portion 14b can be variously modified depending on the required use. example For example, it may be cylindrical or spheroidal. (3) An annular groove is formed between the lens part 14b and the pedestal part 14a, and the lens part The lower side of 14b may be disposed below the upper surface of pedestal portion 14a. However, in this place In this case, the upper side of the lens portion 14b is It is desirable to make it protrude beyond the upper surface of the pedestal part 14a.

【0018】[0018]

【考案の効果】[Effect of the idea]

本考案によれば、高輝度化及び高指向性化が達成でき、且つ実装時における吸 着を容易且つ確実に行うことができる。 According to the present invention, high brightness and high directivity can be achieved, and absorption during mounting can be achieved. It can be easily and reliably put on.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本考案の実施例に係わる発光ダイオードを図2
のA−A線で示す断面図である。
[Fig. 1] Fig. 2 shows a light emitting diode according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line A-A of FIG.

【図2】図1の発光ダイオードの平面図である。FIG. 2 is a plan view of the light emitting diode of FIG. 1;

【図3】図2の発光ダイオードとコレットとの関係を図
2の右側面で示す図である。
FIG. 3 is a diagram showing the relationship between the light emitting diode and collet in FIG. 2 on the right side of FIG. 2;

【図4】図2の発光ダイオードの底面図である。FIG. 4 is a bottom view of the light emitting diode of FIG. 2;

【図5】図2の発光ダイオードから樹脂封止体を省いた
状態を示す平面図である。
FIG. 5 is a plan view showing the light emitting diode of FIG. 2 with the resin sealant removed.

【図6】従来の発光ダイオードを示す斜視図である。FIG. 6 is a perspective view of a conventional light emitting diode.

【符号の説明】[Explanation of symbols]

11 基板 12 チップ 14 樹脂封止体 14a 台座部 14b レンズ部 11 Board 12 chips 14 Resin sealing body 14a Pedestal part 14b Lens section

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】 絶縁性基板と発光素子とリード細線と光
透過性の樹脂封止体とを有し、前記絶縁性基板の一方の
主面には凹部が形成されており、前記凹部の底面及び壁
面には光反射性を有し且つ互いに電気的に分離された第
1の配線導体及び第2の配線導体が形成されており、前
記発光素子の下面側の電極が前記底面において前記第1
の配線導体に固着されており、前記発光素子の上面側の
電極が前記リード細線を介して前記第2の配線導体に電
気的に接続されており、前記樹脂封止体は前記第1の配
線導体と第2の配線導体との間に形成された分離領域と
前記発光素子と前記リード細線とを被覆するように前記
凹部を充填する部分と、前記絶縁性基板の上面よりも突
出し且つ平坦面を有するように形成された台座部と、平
面的に見て前記台座部の内側に配設され且つ前記発光素
子のためのレンズ作用が生じるように形成されたレンズ
部とを有していることを特徴とする発光表示装置。
1. A semiconductor device comprising an insulating substrate, a light emitting element, a thin lead wire, and a light-transmissive resin encapsulant, wherein a recess is formed on one main surface of the insulating substrate, and a bottom surface of the recess. A first wiring conductor and a second wiring conductor are formed on the wall surface and have a light reflective property and are electrically separated from each other, and the electrode on the lower surface side of the light emitting element is connected to the first
The electrode on the upper surface side of the light emitting element is electrically connected to the second wiring conductor via the thin lead wire, and the resin encapsulant is fixed to the first wiring conductor. A portion filling the recess so as to cover a separation region formed between the conductor and the second wiring conductor, the light emitting element and the thin lead wire, and a flat surface protruding from the upper surface of the insulating substrate. a pedestal portion formed to have a pedestal portion; and a lens portion disposed inside the pedestal portion when viewed in plan and formed to produce a lens action for the light emitting element. A light emitting display device characterized by:
JP1833891U 1991-02-28 1991-02-28 light emitting display device Pending JPH04107861U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1833891U JPH04107861U (en) 1991-02-28 1991-02-28 light emitting display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1833891U JPH04107861U (en) 1991-02-28 1991-02-28 light emitting display device

Publications (1)

Publication Number Publication Date
JPH04107861U true JPH04107861U (en) 1992-09-17

Family

ID=31904882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1833891U Pending JPH04107861U (en) 1991-02-28 1991-02-28 light emitting display device

Country Status (1)

Country Link
JP (1) JPH04107861U (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06207772A (en) * 1993-01-08 1994-07-26 Toshiba Corp Refrigerator
JP2004170858A (en) * 2002-11-22 2004-06-17 Canon Inc Image reading apparatus
EP1544924A3 (en) * 2003-12-19 2010-03-31 Philips Lumileds Lighting Company LLC LED package assembly
JP2015195349A (en) * 2014-03-28 2015-11-05 日亜化学工業株式会社 Light emitting device
JP2017085025A (en) * 2015-10-30 2017-05-18 日亜化学工業株式会社 Light emitting device and method of manufacturing light emitting module
US11751298B2 (en) 2022-01-07 2023-09-05 Nichia Corporation Light-emitting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01283883A (en) * 1988-05-10 1989-11-15 Matsushita Electric Ind Co Ltd Light emitting diode and forming method for its electrode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01283883A (en) * 1988-05-10 1989-11-15 Matsushita Electric Ind Co Ltd Light emitting diode and forming method for its electrode

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06207772A (en) * 1993-01-08 1994-07-26 Toshiba Corp Refrigerator
JP2004170858A (en) * 2002-11-22 2004-06-17 Canon Inc Image reading apparatus
EP1544924A3 (en) * 2003-12-19 2010-03-31 Philips Lumileds Lighting Company LLC LED package assembly
JP2015195349A (en) * 2014-03-28 2015-11-05 日亜化学工業株式会社 Light emitting device
JP2017085025A (en) * 2015-10-30 2017-05-18 日亜化学工業株式会社 Light emitting device and method of manufacturing light emitting module
US9941451B2 (en) 2015-10-30 2018-04-10 Nichia Corporation Light emitting device and method of manufacturing light emitting module
US11751298B2 (en) 2022-01-07 2023-09-05 Nichia Corporation Light-emitting device

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