JP2001358367A - Chip type light emitting element - Google Patents
Chip type light emitting elementInfo
- Publication number
- JP2001358367A JP2001358367A JP2000177362A JP2000177362A JP2001358367A JP 2001358367 A JP2001358367 A JP 2001358367A JP 2000177362 A JP2000177362 A JP 2000177362A JP 2000177362 A JP2000177362 A JP 2000177362A JP 2001358367 A JP2001358367 A JP 2001358367A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- chip
- light
- emitting element
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、携帯電話の液晶等
のバックライト用光源や、光センサーの光源などに用い
られる側面発光型のチップ型発光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a side emission type chip type light emitting device used as a light source for a backlight of a liquid crystal or the like of a portable telephone or a light source of an optical sensor.
【０００２】[0002]
【従来の技術】携帯電話機の内部の実装基板には、液晶
表示部のバックライト用光源として、チップ型発光素子
が実装される場合がある。この場合に適用されるチップ
型発光素子は、実装基板の表面に平行な方向に光を発す
る、いわゆる側面発光型のものである。図３は、従来の
側面発光型のチップ型発光素子の構造を示す分解斜視図
であり、図４はその図解的な断面図である。このチップ
型発光素子３０は、平面視において略矩形の絶縁性基板
２１と、この絶縁性基板２１の一方表面を覆うように配
置されるリフレクターケース２７とを備えており、全体
が偏平な直方体形状に構成されている。絶縁性基板２１
のリフレクターケース２７とは反対側の表面が、実装基
板に接合される実装面となる。この実装面には、絶縁性
基板２１の両端面付近に一対の外部電極２３Ａ，２３Ｂ
が形成されている。2. Description of the Related Art In some cases, a chip type light emitting element is mounted on a mounting substrate inside a mobile phone as a light source for a backlight of a liquid crystal display. The chip type light emitting element applied in this case is of a so-called side emission type that emits light in a direction parallel to the surface of the mounting substrate. FIG. 3 is an exploded perspective view showing a structure of a conventional side emission type chip type light emitting element, and FIG. 4 is a schematic sectional view thereof. The chip-type light-emitting element 30 includes an insulating substrate 21 having a substantially rectangular shape in a plan view and a reflector case 27 disposed so as to cover one surface of the insulating substrate 21. Is configured. Insulating substrate 21
The surface on the side opposite to the reflector case 27 is a mounting surface to be joined to the mounting substrate. On this mounting surface, a pair of external electrodes 23A and 23B
Are formed.
【０００３】絶縁性基板２１のリフレクターケース２７
側の表面には、外部電極２３Ａ，２３Ｂに対応した一対
の内部電極２２Ａ，２２Ｂが形成されている。これらの
うちの一方の内部電極２２Ａに、発光体チップとしての
ＬＥＤチップ２４がダイボンディングされている。この
ダイボンディングによって、ＬＥＤチップ２４のｎ側電
極（図３において下面に対応する電極）と内部電極２２
Ａとが電気接続されている。ＬＥＤチップ２４のｐ側電
極は、リフレクターケース２７に対向する上面に位置し
ている。このｐ側電極は、ボンディングワイヤー２５を
介して内部電極２２Ｂに電気接続されている。The reflector case 27 of the insulating substrate 21
A pair of internal electrodes 22A and 22B corresponding to the external electrodes 23A and 23B are formed on the surface on the side. An LED chip 24 as a light emitting chip is die-bonded to one of the internal electrodes 22A. By this die bonding, the n-side electrode (the electrode corresponding to the lower surface in FIG. 3) of the LED chip 24 and the internal electrode 22
A is electrically connected. The p-side electrode of the LED chip 24 is located on the upper surface facing the reflector case 27. This p-side electrode is electrically connected to the internal electrode 22B via the bonding wire 25.
【０００４】内部電極２２Ａ，２２Ｂおよび外部電極２
３Ａ，２３Ｂは、絶縁性基板２１の両端面に形成された
スルーホール２６Ａ，２６Ｂの内壁面に被着された導体
膜を介して電気接続されている。リフレクターケース２
７は、断面Ｌ字形に形成されていて、チップ型発光素子
３０の上方と、絶縁性基板２１の一辺に沿う一側面とを
覆っている。リフレクターケース２７の内面は、ＬＥＤ
チップ２４からの光を反射する反射面をなしている。リ
フレクターケース２７の内面と絶縁性基板２１の表面と
の間には、透光性部材２８（図３では図示を省略し
た。）が充填されている。The internal electrodes 22A, 22B and the external electrode 2
3A and 23B are electrically connected via conductor films attached to the inner wall surfaces of through holes 26A and 26B formed on both end surfaces of the insulating substrate 21. Reflector case 2
Reference numeral 7 is formed in an L-shaped cross section, and covers the upper side of the chip-type light emitting element 30 and one side surface along one side of the insulating substrate 21. The inner surface of the reflector case 27 is LED
The reflection surface reflects light from the chip 24. A space between the inner surface of the reflector case 27 and the surface of the insulating substrate 21 is filled with a translucent member 28 (not shown in FIG. 3).
【０００５】この構成によって、ＬＥＤチップ２４から
発生した光は、リフレクターケース２７によって覆われ
ていない三方の側面へと放光される。[0005] With this configuration, light generated from the LED chip 24 is emitted to three side surfaces that are not covered by the reflector case 27.
【０００６】[0006]
【発明が解決しようとする課題】ＧａＡｌＡｓ系のよう
な３元素系半導体発光素子または、ＩｎＧａＡｌＰ系の
ような４元素系半導体発光素子は、ＧａＰ系などの発光
素子に比べて、高輝度な発光が可能である。したがっ
て、携帯電話機の液晶表示部などの視認性を向上するた
めには、３元素系または４元素系の発光素子を用いるこ
とが好ましい。ところが、ＧａＰ化合物半導体からなる
発光素子は、全方向への発光が可能であるのに対して、
上述のような３元素系または４元素系の発光素子は、基
板が遮光性であるために、基板に垂直な方向へは大量の
光を取り出すことができる反面、基板に平行な方向への
発光光量が少ない。A three-element semiconductor light emitting device such as GaAlAs or a four-element semiconductor light emitting device such as InGaAlP emits light with higher luminance than a light emitting device such as GaP. It is possible. Therefore, in order to improve the visibility of a liquid crystal display portion or the like of a mobile phone, it is preferable to use a three-element or four-element light-emitting element. However, a light emitting element made of a GaP compound semiconductor can emit light in all directions,
The above-described three-element or four-element light-emitting element can extract a large amount of light in a direction perpendicular to the substrate because the substrate is light-shielding, but emits light in a direction parallel to the substrate. Light intensity is low.
【０００７】そのため、図３および図４に示された従来
技術の構成では、ワイヤーボンディングされた上面のみ
が発光面２４ａとなる。この発光面２４ａは、光の取り
出し方向である側方を指向しておらず、この側方に垂直
な上方（実装配線基板に垂直な方向）を指向している。
したがって、チップ型発光素子３０の３つの側面から取
り出される光は、リフレクターケース２７の内表面でい
ったん反射された反射光となる。そのため、３元素系ま
たは４元素系の高輝度型ＬＥＤチップを用いても、光量
をさほど増大することができないという問題があった。For this reason, in the prior art configuration shown in FIGS. 3 and 4, only the wire-bonded upper surface becomes the light emitting surface 24a. The light emitting surface 24a is not directed to the side that is the light extraction direction, but is directed upward (perpendicular to the mounting wiring board) perpendicular to the side.
Therefore, light extracted from the three side surfaces of the chip-type light emitting element 30 is reflected light once reflected on the inner surface of the reflector case 27. Therefore, there is a problem that even if a three-element or four-element high-brightness LED chip is used, the light amount cannot be increased so much.
【０００８】そこで、この発明の目的は、発光体チップ
からの直接光を側面から放出させることができ、これに
より高輝度発光を実現した側面発光型のチップ型発光素
子を提供することである。An object of the present invention is to provide a chip type light emitting element of a side emission type which can emit light directly from a light emitting chip from a side surface, thereby realizing high brightness light emission.
【０００９】[0009]
【課題を解決するための手段および発明の効果】上記の
目的を達成するための請求項１記載の発明は、一対の電
極が表面に形成された絶縁性基板と、この絶縁性基板上
に、この絶縁性基板の表面に沿う方向に発光面を向けて
搭載され、上記一対の電極に接続された発光体チップ
と、上記発光体チップを覆う透光性部材とを含むことを
特徴とするチップ型発光素子である。Means for Solving the Problems and Effects of the Invention According to the first aspect of the present invention, there is provided an insulating substrate having a pair of electrodes formed on a surface thereof; A chip which is mounted with its light-emitting surface facing in a direction along the surface of the insulating substrate and includes a light-emitting chip connected to the pair of electrodes, and a light-transmitting member covering the light-emitting chip. Type light emitting device.
【００１０】この構成によれば、発光体チップが、絶縁
性基板の表面に沿う方向に発光面を向けて搭載されてい
るので、発光面からの直接光をチップ型発光素子の側方
（絶縁性基板の表面に平行な方向）に取り出すことがで
きる。したがって、反射に起因する光の減衰がない。し
かも、発光体チップから短い光路長を経て透光性部材の
外へと光が取り出されるから、透光性部材中における光
の減衰も最小限に抑えることができる。これによって、
側面発光型のチップ型発光素子の発光光量を著しく増大
することができる。According to this structure, since the light emitting chip is mounted with the light emitting surface facing in the direction along the surface of the insulating substrate, direct light from the light emitting surface is directed to the side (insulating) of the chip type light emitting element. In a direction parallel to the surface of the conductive substrate). Therefore, there is no light attenuation due to reflection. In addition, since light is extracted from the light-emitting chip to the outside of the light-transmitting member via a short optical path length, attenuation of light in the light-transmitting member can be minimized. by this,
The amount of light emitted from the side-emitting chip type light emitting element can be significantly increased.
【００１１】また、一定の光量が必要な場合における消
費電力を少なくすることができるから、側面発光型のチ
ップ型発光素子の発光効率を向上することができる。In addition, since the power consumption when a constant amount of light is required can be reduced, the luminous efficiency of the side emission type chip type light emitting element can be improved.
【００１２】[0012]
【発明の実施の形態】以下では、この発明の実施の形態
を、添付図面を参照して詳細に説明する。図１は、本発
明の一実施形態に係る側面発光型のチップ型発光素子１
０の構造を示す図解的な分解斜視図であり、図２は、そ
の図解的な断面図である。このチップ型発光素子１０
は、偏平な直方体形状をしており、３方の側面から光が
放出される。したがって、実装配線基板へ実装された状
態で、このチップ型発光素子１０から放出される光の主
たる進行方向は、実装配線基板に対して平行となる。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a side view light emitting chip type light emitting device 1 according to an embodiment of the present invention.
FIG. 2 is an illustrative exploded perspective view showing the structure of the reference numeral 0, and FIG. 2 is an illustrative sectional view thereof. This chip type light emitting element 10
Has a flat rectangular parallelepiped shape, and light is emitted from three side surfaces. Therefore, the main traveling direction of the light emitted from the chip-type light emitting element 10 in a state of being mounted on the mounting wiring board is parallel to the mounting wiring board.
【００１３】略矩形の絶縁性基板１の一方表面には、一
対の内部電極２Ａ，２Ｂが形成されている。発光体チッ
プであるＬＥＤチップ４は、その底面が内部電極２Ａ，
２Ｂの両方と部分的に重なり合うように載設されてい
る。すなわち、ＬＥＤチップ４は、内部電極２Ａ，２Ｂ
に跨って配置されている。ＬＥＤチップ４の発光面４ａ
はｐ側電極形成面となっており、発光面４ａとは反対側
の面はｎ側電極形成面となっている。ＬＥＤチップ４
は、ｐ側電極形成面の下部およびｎ側電極形成面の下部
において、銀ペーストの硬化物５によって、それぞれ内
部電極２Ａおよび内部電極２Ｂと接続されている。これ
により、電気的接続および機械的接合が得られている。A pair of internal electrodes 2A and 2B are formed on one surface of the substantially rectangular insulating substrate 1. The LED chip 4, which is a luminous chip, has the bottom surface formed of the internal electrode 2A,
2B so as to partially overlap with both of them. That is, the LED chip 4 includes the internal electrodes 2A, 2B
Are arranged over the vehicle. Light emitting surface 4a of LED chip 4
Is a p-side electrode formation surface, and the surface opposite to the light emitting surface 4a is an n-side electrode formation surface. LED chip 4
Are connected to the internal electrode 2A and the internal electrode 2B by a cured silver paste 5 at the lower part of the p-side electrode forming surface and the lower part of the n-side electrode forming surface, respectively. Thereby, an electrical connection and a mechanical connection are obtained.
【００１４】銀ペーストの硬化物５は、発光面４ａから
の光を遮らないように、なるべく狭い領域で発光面４ａ
に接していることが好ましい。内部電極２Ａ，２ＢとＬ
ＥＤチップ４との接合は、はんだやインジウムなどの軟
ろうによってなされていてもよい。ＬＥＤチップ４は、
高輝度発光を実現できる３元素系（ＧａＡｌＡｓ系な
ど）または４元素系（ＩｎＧａＡｌＡｓ系など）の発光
体からなっていることが好ましい。これらの発光体は、
基板が遮光性であるので、薄膜状の発光部のみが発光す
る。すなわち、発光体チップの特定の面のみが発光面４
ａとなる。The cured material 5 of the silver paste has a light emitting surface 4a in a region as small as possible so as not to block light from the light emitting surface 4a.
Preferably. Internal electrodes 2A, 2B and L
The connection with the ED chip 4 may be made by soft solder such as solder or indium. LED chip 4
It is preferable to use a three-element system (such as GaAlAs system) or a four-element system (such as InGaAlAs system) that can realize high-luminance light emission. These light emitters
Since the substrate is light-shielding, only the thin-film light-emitting portion emits light. That is, only the specific surface of the light emitting chip is the light emitting surface 4.
a.
【００１５】絶縁性基板１の他方表面上には、内部電極
２Ａ，２Ｂに対応する領域に、一対の外部電極３Ａ，３
Ｂが形成されている。これらの外部電極３Ａ，３Ｂは、
絶縁性基板１の側面に形成された２分の１スルーホール
６Ａ，６Ｂ内面の導電被膜を介して内部電極２Ａ，２Ｂ
に電気接続されている。内部電極２Ａ，２Ｂや外部電極
３Ａ、３Ｂは、銅箔などにより形成されている。したが
って、外部電極３Ａと外部電極３Ｂの間に適当な極性で
通電すると、ＬＥＤチップ４は発光する。On the other surface of the insulating substrate 1, a pair of external electrodes 3A, 3A is formed in a region corresponding to the internal electrodes 2A, 2B.
B is formed. These external electrodes 3A, 3B
The internal electrodes 2A, 2B are formed via conductive films on the inner surfaces of the half through holes 6A, 6B formed on the side surfaces of the insulating substrate 1.
Is electrically connected to The internal electrodes 2A and 2B and the external electrodes 3A and 3B are formed of copper foil or the like. Therefore, when an appropriate current is applied between the external electrodes 3A and 3B, the LED chip 4 emits light.
【００１６】チップ型発光素子１０は、スルーホール６
Ａ，６Ｂや外部電極３Ａ，３Ｂにおいて、はんだなどに
より、配線基板のパッド（図示されない）と接合され
る。このようなＬＥＤチップ４を配した絶縁性基板１上
に、リフレクターケース７が載設される。リフレクター
ケース７は、チップ型発光素子１０の上部の大部分と一
側面全面とを覆うように形成されている。リフレクター
ケース７で全面を覆われた側面と対向する面は開放され
ており、チップ型発光素子１０が主に光を放出する光照
射側面Ａとなっている。リフレクターケース７は、少な
くともその表面が光に対する反射率が高い材質で形成さ
れている。The chip type light emitting element 10 has a through hole 6
A, 6B and the external electrodes 3A, 3B are joined to pads (not shown) of the wiring board by soldering or the like. The reflector case 7 is mounted on the insulating substrate 1 on which the LED chips 4 are arranged. The reflector case 7 is formed so as to cover most of the upper part of the chip type light emitting element 10 and the entire side surface. The surface facing the side surface which is entirely covered by the reflector case 7 is open, and serves as a light irradiation side A from which the chip type light emitting element 10 mainly emits light. At least the surface of the reflector case 7 is formed of a material having a high reflectance to light.
【００１７】本実施形態においては、リフレクターケー
ス７はチップ型発光素子１０の一側面と天面の全面とを
覆って、発光体チップ４が放出した光を反射する形態と
なっているが、３つの側面と天面とを覆って発光体チッ
プ４が放出した光を反射し、開放された一側面から光を
放出する形態であってもよい。あるいは、透光性部材８
を略直方体状に形成しておき、必要な面だけ光を反射す
る膜でコートした形態であってもよい。In this embodiment, the reflector case 7 is configured to cover one side surface of the chip type light emitting element 10 and the entire top surface and reflect the light emitted from the light emitting chip 4. A configuration may be employed in which the light emitted from the light emitting chip 4 is reflected over one side surface and the top surface, and the light is emitted from one open side surface. Alternatively, the translucent member 8
May be formed in a substantially rectangular parallelepiped shape, and only a required surface may be coated with a film that reflects light.
【００１８】絶縁性基板１とリフレクターケース７との
間隙には、透光性部材８が充填されている。透光性部材
８は、透明なエポキシ樹脂など、ＬＥＤチップ４が発し
た光に対して透光性を持つ材料からなる。これにより、
ＬＥＤチップ４、内部電極２Ａ，２Ｂ、およびそれらの
接合部が保護される。図２において、ＬＥＤチップ４の
発光面４ａは、チップ型発光素子１０の光照射側面Ａの
方向を向いている。すなわち、本発明においては、ＬＥ
Ｄチップ４から放出される光の主たる進行方向と、チッ
プ型発光素子１０の光照射側面Ｂから放出される光の主
たる進行方向とは一致する。よって、ＬＥＤチップ４か
ら放出される光の大部分は、直接チップ型発光素子１０
の光照射側面Ａに到達し、チップ型発光素子１０の外へ
と出る。A gap between the insulating substrate 1 and the reflector case 7 is filled with a translucent member 8. The light transmitting member 8 is made of a material having a light transmitting property with respect to light emitted from the LED chip 4, such as a transparent epoxy resin. This allows
The LED chip 4, the internal electrodes 2A and 2B, and their joints are protected. In FIG. 2, the light emitting surface 4 a of the LED chip 4 faces the light irradiation side surface A of the chip type light emitting element 10. That is, in the present invention, LE
The main traveling direction of the light emitted from the D chip 4 and the main traveling direction of the light emitted from the light irradiation side surface B of the chip type light emitting element 10 match. Therefore, most of the light emitted from the LED chip 4 is directly transmitted to the chip type light emitting element 10.
, And out of the chip-type light-emitting element 10.
【００１９】このような構造のチップ型発光素子１０に
おいては、ＬＥＤチップ４の発光面４ａから放出された
光の大部分は、リフレクターケース７などにより反射さ
れることなく、直接チップ型発光素子１０の光照射側面
Ａに到達し、チップ型発光素子１０外に放出される。し
たがって、ＬＥＤチップ４の発光面４ａから放出された
光は、チップ型発光素子１０外へ出るまでに、吸収され
たり散乱されたりする機会が少ないので、ほとんど減衰
しない。よって、発光体チップ４から放出された光を有
効にチップ型発光素子１０外に取り出せるので、チップ
型発光素子１０の発光光量を著しく増大することができ
る。また、一定の光量が必要な場合における消費電力を
少なくすることができるから、側面発光型のチップ型発
光素子の発光効率を向上することができる。In the chip type light emitting device 10 having such a structure, most of the light emitted from the light emitting surface 4a of the LED chip 4 is directly reflected without being reflected by the reflector case 7 or the like. And is emitted to the outside of the chip type light emitting element 10. Therefore, the light emitted from the light emitting surface 4a of the LED chip 4 is hardly attenuated because it has little chance of being absorbed or scattered before going out of the chip type light emitting element 10. Therefore, the light emitted from the light emitting chip 4 can be effectively taken out of the chip light emitting element 10, so that the amount of light emitted from the chip light emitting element 10 can be significantly increased. In addition, since power consumption when a certain amount of light is required can be reduced, the luminous efficiency of the side-emitting chip type light emitting element can be improved.
【００２０】このようなチップ型発光素子１０は、絶縁
性基板１上に、内部電極２Ａ、２Ｂと外部電極３Ａ、３
Ｂとを形成し、内部電極２Ａ，２Ｂ上に、銀ペースト５
でＬＥＤチップ４を接続したものに、リフレクターケー
ス７を載置しておき、絶縁性基板１とリフレクターケー
ス７との間隙に、液状の透光性部材８を流し込み、硬化
させて得られる。通常、絶縁性基板１やリフレクターケ
ース７は、１つのチップ型発光素子１０に対応する個片
領域を、複数個縦横に密接して配したものに、液状の透
光性部材８を一括して流し込み、硬化後個々の個片に切
り出して製造する。２分の１スルーホール６Ａ，６Ｂ
は、切り出す前の大きな絶縁性基板にスルーホールをあ
け、内面に導電性を付与しておき、スルーホール位置で
基板を切断することにより得る。内部電極２Ａ，２Ｂは
スルーホールの上面を覆うように形成されているので、
液状の透光性部材８は、スルーホール内に流れ込まな
い。Such a chip-type light emitting element 10 is provided on an insulating substrate 1 with internal electrodes 2A and 2B and external electrodes 3A and 3A.
B and silver paste 5 on the internal electrodes 2A and 2B.
The reflector case 7 is placed on a device to which the LED chip 4 is connected by the above, and the liquid translucent member 8 is poured into the gap between the insulating substrate 1 and the reflector case 7 and cured. Normally, the insulating substrate 1 and the reflector case 7 are formed by arranging a plurality of individual areas corresponding to one chip-type light-emitting element 10 vertically and horizontally in close contact with each other, and collectively forming the liquid translucent member 8. After pouring and curing, it is cut out into individual pieces and manufactured. Half through holes 6A, 6B
Is obtained by making a through hole in a large insulating substrate before cutting out, imparting conductivity to the inner surface, and cutting the substrate at the position of the through hole. Since the internal electrodes 2A and 2B are formed so as to cover the upper surface of the through hole,
The liquid translucent member 8 does not flow into the through hole.
【００２１】本発明によるチップ型発光素子１０は、発
光体チップ４と内部電極２Ａ，２Ｂとの接続に、従来の
もののようにボンディング・ワイヤーを用いていないの
で、製造時の液状の透光性部材８を流し込む工程で、ボ
ンディング・ワイヤーが断線するということはない。Since the chip type light emitting device 10 according to the present invention does not use a bonding wire for connecting the light emitting chip 4 and the internal electrodes 2A and 2B unlike the conventional device, a liquid light transmitting material at the time of manufacturing is used. In the step of pouring the member 8, the bonding wire does not break.
【図１】本発明の一実施形態に係る、側面発光型のチッ
プ型発光素子の図解的な分解斜視図である。FIG. 1 is a schematic exploded perspective view of a side emission type chip type light emitting device according to an embodiment of the present invention.
【図２】上記実施形態の側面発光型のチップ型発光素子
の図解的な断面図である。FIG. 2 is a schematic cross-sectional view of the side-emitting chip-type light-emitting device of the embodiment.
【図３】従来の側面発光型のチップ型発光素子の構造を
示す図解的な分解斜視図である。FIG. 3 is a schematic exploded perspective view showing the structure of a conventional side-emitting chip type light emitting device.
【図４】上記従来の側面発光型のチップ型発光素子の構
造を示す図解的な断面図である。FIG. 4 is an illustrative sectional view showing the structure of the above-mentioned conventional side-emitting chip type light emitting device.
１ 絶縁性基板 ２Ａ 内部電極 ２Ｂ 内部電極 ３Ａ 外部電極 ３Ｂ 外部電極 ４ ＬＥＤチップ ４ａ 発光面 ５ 銀ペーストの硬化物 ６Ａ ２分の１スルーホール ６Ｂ ２分の１スルーホール ７ リフレクターケース ８ 透光性部材 １０ チップ型発光素子 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2A Internal electrode 2B Internal electrode 3A External electrode 3B External electrode 4 LED chip 4a Light emitting surface 5 Cured silver paste 6A 1/2 through hole 6B 1/2 through hole 7 Reflector case 8 Translucent member 10 Chip type light emitting device
Claims (1)
と、 この絶縁性基板上に、この絶縁性基板の表面に沿う方向
に発光面を向けて搭載され、上記一対の電極に接続され
た発光体チップと、 上記発光体チップを覆う透光性部材とを含むことを特徴
とするチップ型発光素子。1. An insulating substrate having a pair of electrodes formed on a surface thereof, and a light emitting surface mounted on the insulating substrate in a direction along the surface of the insulating substrate, and connected to the pair of electrodes. A chip-type light-emitting element comprising: a light-emitting chip formed; and a light-transmissive member that covers the light-emitting chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000177362A JP2001358367A (en) | 2000-06-13 | 2000-06-13 | Chip type light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000177362A JP2001358367A (en) | 2000-06-13 | 2000-06-13 | Chip type light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001358367A true JP2001358367A (en) | 2001-12-26 |
Family
ID=18678971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000177362A Pending JP2001358367A (en) | 2000-06-13 | 2000-06-13 | Chip type light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001358367A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003077312A1 (en) * | 2002-03-08 | 2003-09-18 | Rohm Co.,Ltd. | Semiconductor device using semiconductor chip |
| JP2004079742A (en) * | 2002-08-16 | 2004-03-11 | Rohm Co Ltd | Semiconductor device using semiconductor chip |
| JP2006054216A (en) * | 2004-08-09 | 2006-02-23 | Rohm Co Ltd | Light emitting diode chip and chip type light emitting element comprising it |
| EP1528602A4 (en) * | 2002-05-21 | 2006-08-30 | Rohm Co Ltd | Semiconductor device using semiconductor chip |
| EP2270882A1 (en) * | 2009-06-30 | 2011-01-05 | Koninklijke Philips Electronics N.V. | Light emitting diode circuit for ambient light |
| KR200456636Y1 (en) | 2011-06-22 | 2011-11-09 | 김배성 | A lighting apparatus which uses a side luminous LED |
| US10290591B2 (en) * | 2015-03-26 | 2019-05-14 | Kyocera Corporation | Wiring board, electronic device, and electronic module |
| JP2019220694A (en) * | 2017-12-22 | 2019-12-26 | 日亜化学工業株式会社 | Light emitting device |
-
2000
- 2000-06-13 JP JP2000177362A patent/JP2001358367A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003077312A1 (en) * | 2002-03-08 | 2003-09-18 | Rohm Co.,Ltd. | Semiconductor device using semiconductor chip |
| US7242033B2 (en) | 2002-03-08 | 2007-07-10 | Rohm Co., Ltd. | Semiconductor device using LED chip |
| KR100951626B1 (en) * | 2002-03-08 | 2010-04-09 | 로무 가부시키가이샤 | Semiconductor device using semiconductor chip |
| EP1528602A4 (en) * | 2002-05-21 | 2006-08-30 | Rohm Co Ltd | Semiconductor device using semiconductor chip |
| JP2004079742A (en) * | 2002-08-16 | 2004-03-11 | Rohm Co Ltd | Semiconductor device using semiconductor chip |
| JP2006054216A (en) * | 2004-08-09 | 2006-02-23 | Rohm Co Ltd | Light emitting diode chip and chip type light emitting element comprising it |
| JP4571458B2 (en) * | 2004-08-09 | 2010-10-27 | ローム株式会社 | Chip-type light emitting device with light emitting diode chip |
| EP2270882A1 (en) * | 2009-06-30 | 2011-01-05 | Koninklijke Philips Electronics N.V. | Light emitting diode circuit for ambient light |
| WO2011001334A1 (en) | 2009-06-30 | 2011-01-06 | Koninklijke Philips Electronics N.V. | Light emitting diode circuit for ambient light |
| KR200456636Y1 (en) | 2011-06-22 | 2011-11-09 | 김배성 | A lighting apparatus which uses a side luminous LED |
| US10290591B2 (en) * | 2015-03-26 | 2019-05-14 | Kyocera Corporation | Wiring board, electronic device, and electronic module |
| JP2019220694A (en) * | 2017-12-22 | 2019-12-26 | 日亜化学工業株式会社 | Light emitting device |
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