JP2019220694A - Light emitting device - Google Patents

Abstract

To provide a light emitting device with high heat dissipation.SOLUTION: A light emitting device includes: a substrate including first wiring, second wiring, a base material having a recessed portion, and a via positioned at the inside of the base material; a light emitting element placed on the first wiring and electrically connected with the first wiring; and a first reflective member. The base material has a front surface having a rectangular shape and a rear surface positioned on a side opposite to the front surface. The first wiring and the second wiring are located on the front surface and on the rear surface, respectively. The via electrically connects the first wiring and the second wiring to each other. The first wiring includes a first portion and a second portion which are continuous in a longer direction of a rectangular shape of the base material as seen in a front view, the width of the first portion along a shorter direction of the rectangular shape being greater than the width of the second portion.SELECTED DRAWING: Figure 12K

Description

  The present invention relates to a light emitting device.

  The circuit board is provided with a concave electrode serving as a connection surface with the motherboard, and a through hole for electrically connecting the concave electrode and the electrode pattern, and the concave electrode is electrically connected to the electrode of the motherboard by soldering. A light emitting device that is connected and fixed is known (for example, see Patent Document 1).

JP 2012-124191 A

  Since the amount of heat generated has increased with the increase in the output of the light-emitting element (LED element), a light-emitting device with high heat dissipation has been demanded. Therefore, an embodiment according to the present invention aims to provide a light emitting device with high heat dissipation.

  A light-emitting device according to one embodiment of the present invention includes a front surface extending in a first direction that is a longitudinal direction and a second direction that is a lateral direction, a back surface located on the opposite side to the front surface, and adjacent to the front surface, A substrate comprising: a base having a bottom surface orthogonal to the front surface; and an upper surface located on the opposite side of the bottom surface; a first wiring disposed on the front surface; and a second wiring disposed on the rear surface. And at least one light emitting element that is electrically connected to the first wiring and is mounted on the first wiring, and a first reflecting member that covers a side surface of the light emitting element and a front surface of the substrate. In the light emitting device, the base material has at least one depression opened to the back surface and the bottom surface, and the substrate covers an inner wall of the depression and is electrically connected to the second wiring. A third wiring, the first wiring, the second wiring, and the third wiring. Comprising a via in contact with the line, the.

  According to the light emitting device of the embodiment according to the present invention, a light emitting device with high heat dissipation can be provided.

FIG. 1A is a schematic perspective view of the light emitting device according to the first embodiment. FIG. 1B is a schematic perspective view of the light emitting device according to the first embodiment. FIG. 1C is a schematic front view of the light emitting device according to the first embodiment. FIG. 2A is a schematic sectional view taken along line 2A-2A in FIG. 1C. FIG. 2B is a schematic sectional view taken along line 2B-2B in FIG. 1C. FIG. 3 is a schematic rear view of the light emitting device according to the first embodiment. FIG. 4A is a schematic perspective view of the base material, the via, and the third wiring according to the first embodiment. FIG. 4B is a schematic perspective view of the base material, the via, and the third wiring according to the first embodiment. FIG. 4C is a schematic perspective view of the base material, the via, and the third wiring according to the first embodiment. FIG. 5 is a schematic bottom view of the light emitting device according to the first embodiment. FIG. 6A is a schematic cross-sectional view of the light emitting device according to the first embodiment, and an enlarged view showing the inside of the dotted line in an enlarged manner. FIG. 6B is a schematic cross-sectional view of a modified example of the light emitting device according to the first embodiment, and an enlarged view showing the inside of a dotted line portion. FIG. 7A is a schematic front view of the substrate according to the first embodiment. FIG. 7B is a schematic front view of a modified example of the substrate according to the first embodiment. FIG. 7C is a schematic front view of a modified example of the substrate according to the first embodiment. FIG. 8 is a schematic right side view of the light emitting device according to the first embodiment. FIG. 9A is a schematic perspective view of the light emitting device according to the second embodiment. FIG. 9B is a schematic perspective view of the light emitting device according to the second embodiment. FIG. 9C is a schematic front view of the light emitting device according to the second embodiment. FIG. 9D is a schematic bottom view of the light emitting device according to the second embodiment. FIG. 10 is a schematic sectional view taken along line 10A-10A in FIG. 9C. FIG. 11 is a schematic rear view of the light emitting device according to the second embodiment. FIG. 12A is a schematic perspective view of a modification of the light emitting device according to the second embodiment. FIG. 12B is a schematic sectional view of a modified example of the light emitting device according to the second embodiment. FIG. 12C is a schematic sectional view of a modified example of the light emitting device according to the second embodiment. FIG. 12D is a schematic rear view of a modified example of the light emitting device according to the second embodiment. FIG. 12E is a schematic sectional view of a modification of the light emitting device according to Embodiment 2. FIG. 12F is a schematic sectional view of a modification of the light emitting device according to Embodiment 2. FIG. 12G is a schematic sectional view of a modification of the light emitting device according to Embodiment 2. FIG. 12H is a schematic sectional view of a modified example of the light emitting device according to the second embodiment. FIG. 12I is a schematic sectional view of a modified example of the light emitting device according to the second embodiment. FIG. 12J is a schematic sectional view of a modification of the light emitting device according to Embodiment 2. FIG. 12K is a schematic front view of the substrate according to the second embodiment. FIG. 13A is a schematic perspective view of the light emitting device according to the third embodiment. FIG. 13B is a schematic perspective view of the light emitting device according to the third embodiment. FIG. 13C is a schematic front view of the light emitting device according to the third embodiment. FIG. 14A is a schematic sectional view taken along line 14A-14A in FIG. 13C. FIG. 14B is a schematic sectional view of a modification of the light emitting device according to Embodiment 3. FIG. 14C is a schematic sectional view of a modified example of the light emitting device according to Embodiment 3. FIG. 15 is a schematic rear view of the light emitting device according to the third embodiment. FIG. 16 is a schematic bottom view of the light emitting device according to the third embodiment. FIG. 17A is a schematic front view of the substrate, the first light emitting element, the second light emitting element, and the third light emitting element according to the third embodiment. FIG. 17B is a schematic front view of a modified example of the substrate, the first light emitting element, the second light emitting element, and the third light emitting element according to Embodiment 3. FIG. 17C is a schematic front view of a modified example of the substrate, the first light emitting element, the second light emitting element, and the third light emitting element according to Embodiment 3. FIG. 18A is a schematic cross-sectional view of a modified example of the light emitting device according to the third embodiment. FIG. 18B is a schematic cross-sectional view of a modification of the light emitting device according to Embodiment 3. FIG. 19 is a schematic sectional view of a modified example of the light emitting device according to the fourth embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the light emitting device described below is for embodying the technical idea of the present invention, and the present invention is not limited to the following unless otherwise specified. Further, the contents described in one embodiment can be applied to other embodiments and modified examples. Further, the size, positional relationship, and the like of the members illustrated in the drawings may be exaggerated in order to make the description clear.

<First embodiment>
A light emitting device 1000 according to an embodiment of the present invention will be described with reference to FIGS. 1A to 8B. The light emitting device 1000 includes a substrate 10, at least one light emitting element 20, and a first reflecting member 40. The substrate 10 includes a base 11, a first wiring 12, a second wiring 13, a third wiring 14, and a via 15. The base material 11 has a front surface 111 extending in a first direction that is a longitudinal direction and a second direction that is a short direction, a back surface 112 located on the opposite side of the front surface, and a bottom surface adjacent to the front surface 111 and orthogonal to the front surface 111. 113 and an upper surface 114 opposite to the bottom surface 113. The substrate 11 further has at least one depression 16. The first wiring 12 is arranged on the front surface 111 of the base 11. The second wiring 13 is arranged on the back surface 112 of the base 11. The light emitting element 20 is electrically connected to the first wiring 12 and is mounted on the first wiring 12. The first reflecting member 40 covers the side surface 202 of the light emitting element 20 and the front surface 111 of the substrate. At least one recess opens in the back surface 112 and the bottom surface 113. The third wiring 14 covers the inner wall of the depression and is electrically connected to the second wiring. The via 15 is in contact with the first wiring 12, the second wiring 13, and the third wiring 14. The via 15 electrically connects the first wiring 12, the second wiring 13, and the third wiring 14. The via 15 extends from the front surface 111 to the rear surface 112 of the substrate 11. Note that, in the present specification, orthogonal means 90 ± 3 °.

  The via 15 is in contact with the first wiring 12, the second wiring 13, and the third wiring 14. Thereby, heat from the light emitting element can be transmitted from the first wiring 12 to the second wiring 13 and / or the third wiring 14 via the via 15, so that the heat radiation of the light emitting device 1000 can be improved. When the via 15 is in contact with the second wiring 13 and the third wiring 14, as shown in FIG. 3, the via 15 overlaps the second wiring 13 and the third wiring 14 in a rear view. When the substrate has a plurality of vias, all of the plurality of vias may be in contact with the first wiring, the second wiring, and the third wiring, and all of the plurality of vias may be the first wiring, It does not have to be in contact with the second wiring and the third wiring. For example, when the substrate has a plurality of vias, one via contacts the first wiring, the second wiring and the third wiring, the other via contacts the first wiring and the second wiring, and the third wiring It may be separated from. Since some of the plurality of vias are in contact with the first wiring, the second wiring, and the third wiring, the heat dissipation of the light emitting device can be improved. The via 15 is preferably circular in rear view. By doing so, it can be easily formed by a drill or the like. When the via 15 has a circular shape in rear view, the diameter of the via is preferably 100 μm or more and 150 μm or less. When the diameter of the via is 100 μm or more, the heat radiation of the light emitting device is improved, and when the diameter of the via is 150 μm or less, a decrease in the strength of the substrate is reduced. In the present specification, the circular shape includes not only a perfect circle but also a shape close to this (for example, an elliptical shape or a shape in which four corners of a square are largely chamfered in an arc shape). In a rear view, it is preferable that the area where the via overlaps with the second wiring 13 is larger than the area where the via overlaps with the third wiring 14. By doing so, the volume of the via can be increased, so that the heat dissipation of the light emitting device is improved. The via is preferably located at the center of the substrate in the Y direction. By doing so, in the thickness of the base material from the end of the via to the end of the base in the Y direction, the portion where the thickness of the base material is reduced can be reduced, so that the strength of the base material is improved. .

  As shown in FIGS. 4A to 4C, the via 15 has a portion D1 where the via 15 and the third wiring 14 are in contact with each other in the front direction (Z direction) from the back surface. By doing so, not only the via 15 and the third wiring 14 are in contact with each other in the X direction and the Y direction, but also the via 15 and the third wiring 14 are in contact from the back surface in the front direction (Z direction). The contact area between the via 15 and the third wiring 14 can be increased. Accordingly, heat from the light emitting element is easily transmitted from the first wiring 12 to the third wiring 14 via the via 15, so that the heat radiation of the light emitting device 1000 can be improved. In this specification, the direction from the back to the front is also referred to as the Z direction.

  The light emitting device 1000 can be fixed to the mounting board by a joining member such as solder formed in the depression 16. There is a possibility that a force due to thermal expansion or the like of the joining member may be applied to the third wiring that covers the inner wall of the depression 16. Since the via 15 has a portion D1 where the via 15 and the third wiring 14 are in contact in the Z direction, the bonding strength between the via 15 and the third wiring 14 is improved. Thereby, even if a force from a joining member or the like is applied to the third wiring, the third wiring 14 can be prevented from peeling off from the base material 11.

  The via 15 may be formed by filling a conductive material in the through hole of the base material, and as shown in FIG. 2A, a fourth wiring 151 and a fourth wiring 151 covering the surface of the through hole of the base material. A filling member 152 filled in a region surrounded by the wiring 151 may be provided. The filling member 152 may be conductive or insulating. It is preferable to use a resin material for the filling member 152. Generally, the resin material before curing has a higher fluidity than the metal material before curing, so that it is easy to fill the fourth wiring 151. Therefore, the use of a resin material for the filling member facilitates the manufacture of the substrate. An example of the resin material that can be easily filled is an epoxy resin. When a resin material is used as the filling member, it is preferable to include an additional member in order to reduce the linear expansion coefficient. By doing so, the difference in the linear expansion coefficient between the fourth wiring and the fourth wiring is reduced, so that it is possible to suppress the formation of a gap between the fourth wiring and the filling member due to heat from the light emitting element. Examples of the additional member include silicon oxide. In addition, when a metal material is used for the filling member 152, heat dissipation can be improved. When the via 15 is formed by filling a conductive material in the through hole of the base material, it is preferable to use a metal material having high thermal conductivity such as Ag or Cu.

  The number of depressions provided in the substrate may be one or more. With the plurality of depressions, the bonding strength between the light emitting device 1000 and the mounting substrate can be improved. The depth of the depression may be the same on the top side and the bottom side, or may be greater on the bottom side than on the top side. As shown in FIG. 2B, since the depth of the depression 16 in the Z direction is deeper on the bottom surface side than on the upper surface side, the thickness W1 of the base material located on the upper surface side of the depression in the Z direction is located on the bottom surface side of the depression. It can be made thicker than the thickness W2 of the base material to be formed. Thereby, a decrease in the strength of the base material can be suppressed. Further, since the depth W3 of the depression on the bottom surface is deeper than the depth W4 of the depression on the upper surface, the volume of the bonding member formed in the depression increases, so that the bonding strength between the light emitting device 1000 and the mounting board is increased. Can be improved. Even in the top emission type (top view type) in which the light emitting device 1000 is mounted with the back surface 112 of the base material 11 facing the mounting substrate, the bottom surface 113 of the base material 11 is mounted with the mounting substrate facing the mounting surface. Also in the side emission type (side view type) described above, the bonding strength with the mounting substrate can be improved by increasing the volume of the bonding member.

  The bonding strength between the light emitting device 1000 and the mounting substrate can be improved especially in the case of the side emission type. Since the depth of the depression in the Z direction is deeper on the bottom surface than on the upper surface, the area of the opening of the depression on the bottom surface can be increased. By increasing the area of the opening of the depression on the bottom surface facing the mounting substrate, the area of the joining member located on the bottom surface can also be increased. Accordingly, the area of the bonding member located on the surface facing the mounting substrate can be increased, so that the bonding strength between the light emitting device 1000 and the mounting substrate can be improved.

  The maximum depth of the depression in the Z direction is preferably 0.4 to 0.9 times the thickness of the substrate in the Z direction. When the depth of the depression is larger than 0.4 times the thickness of the base material, the volume of the bonding member formed in the depression increases, so that the bonding strength between the light emitting device and the mounting substrate can be improved. When the depth of the depression is smaller than 0.9 times the thickness of the base material, a decrease in the strength of the base material can be suppressed.

  As shown in FIG. 2B, the depression 16 preferably includes a parallel portion 161 extending from the back surface 112 in a direction parallel to the bottom surface 113 (Z direction). By providing the parallel portion 161, the area of the portion D1 where the via and the third wiring contact each other can be increased in the Z direction, so that the heat dissipation of the light emitting device can be improved. In addition, the provision of the parallel portion 161 makes it possible to increase the volume of the depression even if the area of the opening of the depression on the back surface is the same. By increasing the volume of the dent, the amount of joining members such as solder that can be formed in the dent can be increased, so that the joining strength between the light emitting device 1000 and the mounting board can be improved. In this specification, the term “parallel” means that an inclination of about ± 3 ° is permitted. Further, in cross section, the depression 16 includes an inclined portion 162 that is inclined from the bottom surface 113 in a direction in which the thickness of the base material 11 increases. The inclined portion 162 may be straight or curved.

  The maximum height of the depression in the Y direction is preferably 0.3 to 0.75 times the thickness of the base material in the Y direction. Since the depth of the depression in the Y direction is longer than 0.3 times the thickness of the base material, the volume of the bonding member formed in the depression increases, so that the bonding strength between the light emitting device and the mounting substrate can be improved. it can. Since the length of the depression in the Y direction is smaller than 0.75 times the thickness of the base material, a decrease in the strength of the base material can be suppressed.

  As shown in FIG. 3, on the back surface, it is preferable that the opening shape of the depression is a semicircular shape. Since the opening shape of the dent is a semicircular shape having no corners, the concentration of stress related to the dent can be suppressed, so that the base material can be suppressed from cracking. In the present specification, the term “semicircular shape” includes not only a true semicircle but also a shape close to this (for example, an elliptical semicircle).

  As shown in FIG. 3, when there are a plurality of depressions 16 on the back surface, it is preferable that the depressions 16 are located symmetrically with respect to the center line 3C of the base material parallel to the second direction (Y direction). In this way, when the light emitting device is mounted on the mounting board via the bonding member, the self-alignment effectively works, and the light emitting device can be mounted accurately within the mounting range.

  On the bottom surface, the depth of the depression in the Z direction may be substantially constant, and the depth of the depression may be different between the center and the end. As shown in FIG. 5, it is preferable that the depth D2 at the center of the depression 16 on the bottom surface is the maximum of the depth of the depression in the Z direction. By doing so, the thickness D3 of the base material in the Z direction can be increased at the end of the depression in the X direction on the bottom surface, so that the strength of the base material can be improved. In the present specification, the term “center” means that a change of about 5 μm is allowed. The depression 16 can be formed by a known method such as a drill or a laser.

  As shown in FIG. 5, the first wiring 12 exposed on the outer surface of the light emitting device from the first reflecting member 40 is either left or right with respect to the center line 5C of the base material parallel to the second direction (Y direction). It is preferable that the position is biased. By doing so, the polarity of the light emitting device can be recognized from the position of the first wiring 12 exposed from the first reflecting member 40 to the outer surface of the light emitting device. Further, the first wiring 12 exposed on the outer side surface of the light emitting device from the first reflecting member 40 is located on both the left and right sides with respect to the center line 5C of the base material parallel to the second direction (Y direction). In this case, the shape of the first wiring 12 located on the left side with respect to the center line 5C and exposed from the first reflecting member 40 to the outer side surface of the light emitting device, and the first wiring 12 located on the right side with respect to the center line 5C It is preferable that the shape of the first wiring 12 exposed from the reflection member 40 to the outer surface of the light emitting device is different. With this configuration, the polarity of the light emitting device can be recognized based on the shape of the first wiring 12 exposed from the first reflection member 40 to the outer surface of the light emitting device.

  As shown in FIG. 6A, the first wiring 12, the second wiring 13, and / or the third wiring 14 may include a main wiring portion 12A and a plating 12B formed on the main wiring portion 12A. In this specification, the wiring refers to the first wiring 12, the second wiring 13, and / or the third wiring 14. As the wiring main portion 12A, a known material such as copper can be used. By having the plating 12B on the wiring main part 12A, it is possible to improve the reflectance on the surface of the wiring and to suppress the sulfuration. For example, the nickel plating 120A containing phosphorus may be located on the wiring main part 12A. Since the hardness of nickel is improved by containing phosphorus, the hardness of the wiring is improved by locating the nickel plating 120A containing phosphorus on the main wiring portion 12A. Accordingly, it is possible to suppress the occurrence of burrs in the wiring when the wiring is cut due to the separation of the light emitting device or the like. The nickel plating containing phosphorus may be formed by an electrolytic plating method or may be formed by an electroless plating method.

  As shown in FIG. 6A, it is preferable that the gold plating 120B is located on the outermost surface of the plating 12B. Since gold plating is located on the outermost surface of the plating, oxidation and corrosion on the surface of the first wiring 12, the second wiring 13, and / or the third wiring 14 are suppressed, and good solderability is obtained. It is possible to improve the reflectance and suppress the sulfidation. The gold plating 120B located on the outermost surface of the plating 12B is preferably formed by an electrolytic plating method. The electrolytic plating method can reduce the content of catalyst poisons such as sulfur in the electroless plating method. When curing an addition-reaction silicone resin using a platinum-based catalyst at a position in contact with gold plating, the gold plating formed by the electrolytic plating method has a low sulfur content, so that the reaction between sulfur and platinum can be suppressed. . Thereby, it is possible to prevent the addition reaction type silicone resin using the platinum-based catalyst from causing poor curing. When forming the gold plating 120B in contact with the nickel plating 120A containing phosphorus, it is preferable that the nickel plating 120A containing phosphor and the gold plating 120B be formed by an electrolytic plating method. By forming the plating by the same method, the manufacturing cost of the light emitting device can be suppressed. Note that nickel plating may contain nickel, and gold plating may contain gold, and other materials may contain it.

  The thickness of the nickel plating containing phosphorus is preferably larger than the thickness of the gold plating. When the thickness of the nickel plating containing phosphorus is larger than the thickness of the gold plating, the hardness of the first wiring 12, the second wiring 13, and / or the third wiring 14 can be easily improved. The thickness of the nickel plating containing phosphorus is preferably 5 to 500 times, more preferably 10 to 100 times the thickness of the gold plating.

  As in the light emitting device 1000A shown in FIG. 6B, the wiring is such that a nickel plating 120C containing phosphorus, a palladium plating 120D, a first gold plating 120E, and a second gold plating 120F are laminated on the wiring main portion 12A. Plated 12B may be formed. By stacking the nickel plating 120C containing phosphorus, the palladium plating 120D, the first gold plating 120E, and the second gold plating 120F, for example, when copper of the wiring main part 12A is used, copper is contained in the plating 12B. Spreading can be suppressed. Thereby, it is possible to suppress a decrease in adhesion of each layer of plating. The nickel plating 120C containing phosphorus, the palladium plating 120D, and the first gold plating 120E may be formed on the wiring main portion 12A by electroless plating, and the second gold plating 120F may be formed by electrolytic plating. Since the second gold plating 120F formed by the electrolytic plating method is located on the outermost surface, poor curing of the addition-reaction silicone resin using a platinum-based catalyst can be suppressed.

  As shown in FIG. 2A, the light emitting element 20 includes a mounting surface facing the substrate 10 and a light extraction surface 201 located on the opposite side of the mounting surface. The light emitting element 20 includes at least a semiconductor laminate 23, and the semiconductor laminate 23 is provided with positive and negative electrodes 21 and 22. The positive and negative electrodes 21 and 22 are formed on the same side of the light emitting element 20, and it is preferable that the light emitting element 20 be flip-chip mounted on the substrate 10. This eliminates the need for wires for supplying electricity to the positive and negative electrodes of the light emitting element, so that the size of the light emitting device can be reduced. When the light-emitting element is mounted by flip-chip mounting, an electrode forming surface 203 on which the positive and negative electrodes of the light-emitting element are located and a surface on the opposite side are referred to as a light extraction surface 201. Although the light emitting element 20 has the element substrate 24 in the present embodiment, the element substrate 24 may be removed. When the light emitting element 20 is flip-chip mounted on the substrate 10, the positive and negative electrodes 21 and 22 of the light emitting element are connected to the first wiring 12 via the conductive adhesive member 60.

  In the case where the light emitting element 20 is flip-chip mounted on the substrate 10, the first wiring 12 has the protrusion 121 at a position overlapping with the positive and negative electrodes 21 and 22 of the light emitting element 20 as shown in FIGS. 2A and 7A. It is preferable to have Since the first wiring 12 includes the convex portion 121, when the first wiring 12 is connected to the positive and negative electrodes 21 and 22 of the light emitting element via the conductive adhesive member 60, the position of the light emitting element and the substrate is increased by a self-alignment effect. The alignment can be easily performed.

  As shown in FIG. 7B, the first wiring 12 may include a wiring extending portion 123 that extends in the X direction when viewed from the front, and as shown in FIG. 7C, the first wiring 12 extends in the X direction. The unit 123 may not be provided. The wiring extending portion 123 has a width smaller than the width of the first wiring 12 overlapping the light emitting element 20 in a front view, and extends from the portion of the first wiring 12 overlapping the light emitting element 20. Part. When the wiring extension portion extends in the X direction, the width of the first wiring portion overlapping the light emitting element and the width of the wiring extension portion refer to the width in the Y direction, and the wiring extension portion extends in the Y direction. In this case, the width of the portion of the first wiring overlapping with the light emitting element and the width of the wiring extension portion refer to the width in the X direction. The wiring extension portion 123 may extend to the outer edge of the base material in a front view, or may be separated from the outer edge of the base material. In a front view, when the wiring extending portion 123 is formed to extend in the X + direction and / or the X− direction from a position where the light emitting element is to be mounted, the wiring extending portion 123 is mounted when the light emitting element is mounted on the substrate. It can be placed with the part 123 as a mark. The X + direction on the X axis is a direction from left to right when viewed from the front, and the opposite direction to the X + direction is an X− direction. This facilitates mounting the light emitting element on the substrate. The first wiring 12 may include only one wiring extending portion 123 or may include a plurality of wiring extending portions 123. When a plurality of wiring extension portions 123 are provided, it is preferable that the wiring extension portions 123 be located on both sides of the light emitting element in the X direction. By doing so, the wiring extension portions 123 located on both sides of the light emitting element can be used as a mark, so that the positional accuracy of mounting the light emitting element on the substrate is improved. In addition, even when the light-transmitting member is mounted on the light-emitting element, the wiring extension portion is formed to extend from the position where the light-transmitting member is to be mounted when viewed from above. When the light-transmissive member is placed on the wire, the wiring extension part can be placed on the mark. Thereby, it becomes easy to mount the translucent member on the light emitting element. When the first wiring 12 does not include the wiring extending portion 123 extending in the X direction, the contact area between the base member and the reflecting member in the X direction can be increased. Thereby, the bonding strength between the base member and the reflecting member can be improved. Further, when the first wiring 12 does not include the wiring extending portion 123 extending in the X direction, the conductive adhesive member does not spread over the wiring extending portion 123 extending in the X direction. Thereby, the area where the conductive adhesive member spreads can be reduced, so that the shape of the conductive adhesive member can be easily controlled.

  As shown in FIG. 7A, the first wiring 12 may include a wiring extension that extends in the Y direction. As shown in FIG. 7B, the first wiring 12 includes a wiring extension that extends in the Y direction. It is not necessary. In the case where the first wiring 12 includes a wiring extending part extending in the Y direction, the wiring extending part can be used as a mark, so that the positional accuracy in the Y direction for mounting the light emitting element on the substrate is improved. When the first wiring 12 does not include a wiring extending portion extending in the Y direction, the contact area between the base material and the reflecting member can be increased in the Y direction, so that the bonding strength between the base material and the reflecting member is improved. I do. In addition, when the first wiring does not include the wiring extending portion extending in the Y direction, the conductive adhesive member can be prevented from spreading over the wiring extending portion extending in the Y direction. Thereby, the area where the conductive adhesive member spreads can be reduced, so that the shape of the conductive adhesive member can be easily controlled.

  In the case where the wiring extending portion extending in the Y direction is not provided, the length L2 of the first wiring in the Y direction is preferably 0.3 times or more and 0.9 times or less the length L1 of the base material in the Y direction. When the length L2 of the first wiring in the Y direction is 0.3 times or more the length L1 of the base material in the Y direction, the area of the first wiring increases, so that the light emitting element can be easily mounted. When the length L2 of the first wiring in the Y direction is 0.9 times or less the length L1 of the base material in the Y direction, the contact area between the base material and the reflecting member can be increased. Further, since the length L2 of the first wiring in the Y direction is 0.9 times or less of the length L1 of the base material in the Y direction, the area where the conductive adhesive member spreads over the first wiring is reduced. be able to. In the case where a wiring extension portion extending in the Y direction is provided, the length of the first wiring 12 in the Y direction other than the wiring extension portion extending in the Y direction is equal to the length of the base material in the Y direction. It is preferably 0.3 times or more and 0.9 times or less.

  The light emitting device 1000 may include a light transmitting member 30 that covers the light emitting element 20. By covering the light emitting element with the translucent member, the light emitting element 20 can be protected from external stress. The light transmitting member 30 may cover the light emitting element 20 via the light guiding member 50. The light guide member 50 may be located only between the light extraction surface 201 of the light emitting element and the light transmissive member 30 to fix the light emitting element 20 and the light transmissive member 30 or the light extraction surface 201 of the light emitting element. To the side surface 202 of the light emitting element to fix the light emitting element 20 and the translucent member 30. The light guide member 50 has a higher transmittance of light from the light emitting element 20 than the first reflection member 40. For this reason, since the light guide member 50 covers the side surface 202 of the light emitting element, light emitted from the side surface of the light emitting element 20 can be easily extracted to the outside of the light emitting device through the light guide member 50, thereby improving light extraction efficiency. Can be.

  When the light emitting device includes the translucent member 30, the side surface of the translucent member is preferably covered with the first reflecting member 40. This makes it possible to provide a light-emitting device having high contrast between the light-emitting region and the non-light-emitting region and having a good "partitioning property".

  The translucent member 30 may contain the wavelength conversion particles 32. The wavelength conversion particle 32 is a member that absorbs at least a part of the primary light emitted by the light emitting element 20 and emits secondary light having a different wavelength from the primary light. By including the wavelength conversion particles 32 in the translucent member 30, it is possible to output mixed color light in which primary light emitted from the light emitting element 20 and secondary light emitted from the wavelength conversion particles 32 are mixed. For example, if a blue LED is used for the light emitting element 20 and a phosphor such as YAG is used for the wavelength conversion particles 32, the blue light of the blue LED is mixed with the yellow light excited by the blue light and emitted by the phosphor. A light emitting device that outputs white light can be configured.

  The wavelength conversion particles may be uniformly dispersed in the light transmitting member, or the wavelength conversion particles may be unevenly distributed closer to the light emitting element than the upper surface of the light transmitting member 30. By dispersing the wavelength conversion particles closer to the light emitting element than the upper surface of the light transmitting member 30, the base material 31 of the light transmitting member 30 functions as a protective layer even when the wavelength conversion particles 32 that are weak to moisture are used. Therefore, deterioration of the wavelength conversion particles 32 can be suppressed. Further, as shown in FIG. 2A, the translucent member 30 may include a layer containing the wavelength conversion particles 32 and a layer 33 containing substantially no wavelength conversion particles. In the Z direction, the layer 33 substantially not containing the wavelength conversion particles is located above the layer containing the wavelength conversion particles 32. By doing so, the layer 33 substantially containing no wavelength conversion particles also functions as a protective layer, so that deterioration of the wavelength conversion particles 32 can be suppressed. Examples of the wavelength conversion particles 32 that are weak to moisture include a manganese-activated fluoride phosphor. A manganese-activated fluoride-based phosphor is a preferable member from the viewpoint of color reproducibility, which can emit light with a relatively narrow spectral line width. The expression "substantially contains no wavelength conversion particles" means that wavelength conversion particles that are unavoidably mixed are not excluded, and the content of the wavelength conversion particles is preferably 0.05% by weight or less.

  The first reflection member 40 covers the side surface of the light emitting element and the front surface of the substrate. When the first reflecting member 40 covers the side surface of the light emitting element, the light that travels in the X direction and / or the Y direction from the light emitting element 20 is reflected by the first reflecting member, and the light that travels in the Z direction can be increased.

  As shown in FIG. 5, it is preferable that the short side surface 405 of the first reflection member 40 and the short side surface 105 of the substrate 10 are substantially on the same plane. By doing so, the width in the first direction (X direction) can be reduced, so that the light emitting device can be downsized.

  As shown in FIG. 8, it is preferable that the longitudinal side surface 403 of the first reflection member 40 located on the bottom surface 113 side is inclined inward of the light emitting device 1000 in the Z direction. By doing so, when the light emitting device 1000 is mounted on the mounting board, contact between the side surface 403 of the first reflection member 40 and the mounting board is suppressed, and the mounting posture of the light emitting device 1000 is easily stabilized. The side surface 404 in the longitudinal direction of the first reflecting member 40 located on the upper surface 114 side is preferably inclined inward of the light emitting device 1000 in the Z direction. By doing so, contact between the side surface of the first reflection member 40 and the suction nozzle (collet) is suppressed, and damage to the first reflection member 40 during suction of the light emitting device 1000 can be suppressed. As described above, the longitudinal side surface 403 of the first reflecting member 40 located on the bottom surface 113 side and the longitudinal side surface 404 of the first reflecting member 40 located on the upper surface 114 side are in the front direction (Z direction) from the back surface. Preferably, the light emitting device 1000 is inclined inside. Although the inclination angle θ of the first reflecting member 40 can be appropriately selected, from the viewpoint of the easiness of such an effect and the strength of the first reflecting member 40, the inclination angle θ is preferably 0.3 ° or more and 3 ° or less, The angle is more preferably 0.5 ° or more and 2 ° or less, and even more preferably 0.7 ° or more and 1.5 ° or less. Further, it is preferable that the right side surface and the left side surface of the light emitting device 1000 have substantially the same shape. By doing so, the size of the light emitting device 1000 can be reduced.

<Embodiment 2>
The light emitting device 2000 according to the second embodiment of the present invention illustrated in FIGS. 9A to 12 has a number of light emitting elements mounted on a substrate and a depression provided in a base material, as compared with the light emitting device 1000 according to the first embodiment. And the number of vias and the point that an insulating film is provided.

  As shown in FIG. 10, the via 15 is in contact with the first wiring 12, the second wiring 13, and the third wiring 14, so that the heat radiation of the light emitting device 2000 can be improved. The third wiring 14 located in one depression may be in contact with one via 15, and the third wiring 14 located in one depression may be in contact with a plurality of vias 15. Since the third wiring 14 is in contact with the plurality of vias 15, the heat radiation of the light emitting device is further improved. As shown in FIG. 11, when there are two vias that are in contact with the third wiring 14 located in one dent, one via is located with respect to the center line 11 </ b> C of the dent parallel to the second direction (Y direction). And the other via may be symmetrically located.

  As shown in FIG. 10, the light emitting device 2000 may include a first light emitting element 20A and a second light emitting element 20B. The emission peak wavelength of the first light emitting element 20A and the emission peak wavelength of the second light emitting element 20B may be the same or different. When the emission peak wavelength of the first light emitting element 20A is different from the emission peak wavelength of the second light emitting element 20B, the emission peak wavelength of the first light emitting element 20A falls within a range of 430 nm or more and less than 490 nm (wavelength range of a blue region). It is preferable that the emission peak wavelength of the second light emitting element 20B be in a range of 490 nm to 570 nm (wavelength range of a green region). By doing so, the color rendering properties of the light emitting device can be improved.

  When the light emitting device includes a plurality of light emitting elements (the first light emitting element 20A and the second light emitting element 20B), the plurality of light emitting elements are preferably provided side by side in the first direction (X direction). By doing so, the width of the light emitting device 2000 in the second direction (Y direction) can be reduced, so that the light emitting device can be made thinner.

  As shown in FIG. 10, the first light emitting element 20A and the second light emitting element 20B may be covered by one translucent member 30, and as in the light emitting device 2000A shown in FIGS. The light emitting element 20A and the second light emitting element 20B may be covered by separate translucent members, respectively. By covering the first light emitting element 20A and the second light emitting element 20B with one translucent member 30, the size of the translucent member 30 can be increased, so that the light extraction efficiency of the light emitting device is improved. Since the first light emitting element 20A and the second light emitting element 20B are covered by different light transmitting members, the first light reflecting member is provided between one light transmitting member and the other light transmitting member. Can be formed. By doing so, a light-emitting device with good "parting-off property" can be obtained.

  As in the light emitting device 2000B shown in FIG. 12C, the translucent member 30 includes a first wavelength conversion layer 31E facing the light extraction surface of the light emitting element, and a second wavelength conversion layer disposed on the first wavelength conversion layer 31E. And a layer 31F. The first wavelength conversion layer 31E includes a base material 312E and first wavelength conversion particles 311E. The second wavelength conversion layer 31F includes a base material 312F and second wavelength conversion particles 311F. It is preferable that the peak wavelength of the light from the first wavelength conversion particles 311E excited by the light emitting element is shorter than the peak wavelength of the light from the second wavelength conversion particles 311F excited by the light emitting element. The peak wavelength of light from the first wavelength conversion particles 311E excited by the light emitting element is shorter than the peak wavelength of light from the second wavelength conversion particles 311F excited by the light emitting element. The second wavelength conversion particles 311F can be excited by the excited light from the first wavelength conversion particles 311E. Thus, the excited light from the second wavelength conversion particles 311F can be increased. Since the second wavelength conversion layer 31F is disposed on the first wavelength conversion layer 31E, light from the first wavelength conversion particles 311E excited by the light emitting element is easily emitted to the second wavelength conversion particles 311F.

  The peak wavelength of light from the first wavelength conversion particles 311E excited by the light emitting element is 500 nm or more and 570 nm or less, and the peak wavelength of light from the second wavelength conversion particles 311F excited by the light emitting element is 610 nm or more and 750 nm or less. Preferably, there is. By doing so, a light-emitting device having high color rendering properties can be obtained. For example, the first wavelength conversion particles include a β-sialon-based phosphor, and the second wavelength conversion particles include a manganese-activated potassium fluorosilicate phosphor. When using a phosphor of manganese-activated potassium fluorosilicate as the second wavelength conversion particles, it is particularly preferable that the translucent member 30 includes the first wavelength conversion layer 31E and the second wavelength conversion layer 31F. . Although the second wavelength conversion particles, which are manganese-activated fluoride phosphors, tend to cause luminance saturation, the light from the light emitting element is located because the first wavelength conversion layer 31E is located between the second wavelength conversion layer 31F and the light emitting element. Can be suppressed from being excessively applied to the second wavelength conversion particles. Thereby, the deterioration of the second wavelength conversion particles, which are manganese-activated fluoride phosphors, can be suppressed. When the first wavelength conversion particles and the second wavelength conversion particles are contained in the same wavelength conversion layer, the second wavelength conversion particles are dispersed and located throughout the wavelength conversion layer, It is preferable that the first wavelength conversion particles are unevenly distributed on the light extraction surface side of the light emitting element. For example, the first wavelength conversion particles and the second wavelength conversion particles are mixed on the light extraction surface side of the light emitting element of the wavelength conversion layer, and the surface side opposite to the light extraction surface side of the light emission element of the wavelength conversion layer. In the above, only the second wavelength conversion particles may be located. When the second wavelength conversion particles are located dispersedly throughout the entire wavelength conversion layer and the first wavelength conversion particles are unevenly distributed on the light extraction surface side of the light emitting element, most of the first wavelength conversion particles Since the particles are located closer to the light extraction surface of the light emitting element than the second wavelength conversion particles, it becomes easier to excite the second wavelength conversion particles 311F by the light from the first wavelength conversion particles 311E excited by the light emitting element. Thus, the excited light from the second wavelength conversion particles 311F can be increased. In the case where a phosphor of manganese-activated potassium fluorosilicate is used as the second wavelength conversion particle, it is possible to prevent the light from the light emitting element from being excessively irradiated to the second wavelength conversion particle by the first wavelength conversion particle. be able to. Thereby, the deterioration of the second wavelength conversion particles that are manganese-activated fluoride phosphors can be suppressed.

The translucent member may include only one type of the wavelength conversion particle that emits green light, or may include a plurality of types. The wavelength conversion particles that emit red light may include only one type, or may include a plurality of types. For example, a CASN-based phosphor and a manganese-activated potassium fluorosilicate silicate phosphor (for example, K ₂ SiF ₆₎ are used as wavelength conversion particles in which the peak wavelength of light from the wavelength conversion particles excited by the light emitting element is 610 nm or more and 750 nm or less. Mn) may be contained in the translucent member 30. In general, the CASN-based phosphor has a shorter afterglow time, which is the time from the stop of the irradiation of the excitation light to the stop of the emission of the wavelength conversion particles, compared to the phosphor of manganese-activated potassium fluorosilicate. For this reason, when the translucent member contains only the phosphor of CASN-based phosphor and the phosphor of manganese-activated potassium fluorosilicate, the translucent member contains only the phosphor of manganese-activated potassium fluorosilicate. The afterglow time can be made shorter than that. In general, manganese-activated potassium fluorosilicate has an emission peak with a smaller half width than that of the CASN-based phosphor, so that the color purity is increased and the color reproducibility is improved. For this reason, when the translucent member contains the CASN-based phosphor and the phosphor of manganese-activated potassium fluorosilicate, the color reproducibility is higher than when the translucent member contains only the CASN-based phosphor. Is good.

  For example, the weight of the phosphor of manganese-activated potassium fluorosilicate contained in the translucent member is preferably 0.5 to 6 times, and more preferably 1 to 5 times the weight of the CASN-based phosphor. More preferably, it is more than 2 times and 4 times or less. Increasing the weight of the manganese-activated potassium fluorosilicate phosphor increases the color reproducibility of the light emitting device. The afterglow time can be shortened by increasing the weight of the CASN-based phosphor.

  The average particle size of the manganese-activated potassium fluorosilicate phosphor is preferably 5 μm or more and 30 μm or less. The CASN-based phosphor preferably has an average particle size of 5 μm or more and 30 μm or less. In the case where the concentration of the wavelength conversion particles contained in the translucent member is the same, the light from the light emitting element is easily diffused into the wavelength conversion particles due to the small particle size of the wavelength conversion particles. Degree unevenness can be suppressed. In addition, when the concentration of the wavelength conversion particles contained in the translucent member is the same, light from the light emitting element can be easily extracted due to the large diameter of the wavelength conversion particles, so that the light extraction efficiency of the light emitting device is improved.

  The CASN-based phosphor and the phosphor of manganese-activated potassium fluorosilicate may be contained in the same wavelength conversion layer of the light-transmitting member, and when the light-transmitting member includes a plurality of wavelength conversion layers, May be contained in different wavelength conversion layers. When the manganese-activated potassium fluorosilicate phosphor and the CASN-based phosphor are contained in different wavelength conversion layers, light peaks occur between the manganese-activated potassium fluorosilicate silicate phosphor and the CASN-based phosphor. It is preferable that the wavelength conversion particle having a short wavelength is located near the light emitting element. In this way, the wavelength conversion particles having a long light peak wavelength can be excited by the light from the wavelength conversion particles having a short light peak wavelength. For example, when the peak wavelength of light of the phosphor of manganese-activated potassium fluorosilicate is around 631 nm and the peak wavelength of light of the CASN-based phosphor is around 650 nm, the phosphor of manganese-activated potassium fluorosilicate is light emitting element. Is preferably close to

  The translucent member may contain a SCASN-based phosphor and a phosphor of manganese-activated potassium fluorosilicate. The afterglow time can also be shortened by including the SCASN-based phosphor in the translucent member. Further, the light transmitting member may include a CASN-based phosphor, a manganese-activated potassium fluorosilicate silicate phosphor, and a β-sialon-based phosphor. By doing so, the color reproducibility of the light emitting device is improved.

  Like the light emitting device 2000B shown in FIG. 12C, the light emitting device includes a via 15A connected to the first wiring, the second wiring, and the third wiring, and a via 15B connected to the first wiring, the second wiring, and separated from the third wiring. May be. As shown in FIG. 12D, in a rear view, the via 15A overlaps the second wiring 13 and the third wiring 14, and the via 15B overlaps the second wiring 13 and does not overlap the third wiring.

  As shown in FIG. 12C, the light guide member 50 may not cover the side surface of the light transmitting member 30 and may cover the side surface of the light transmitting member 30. The light transmitting member 30 has a first wavelength conversion layer 31E facing the light extraction surface of the light emitting element, a second wavelength conversion layer 31F disposed on the first wavelength conversion layer 31E, and a second wavelength conversion layer 31E. And a layer 33 substantially not containing the wavelength conversion particles disposed on the light guide member 50, as shown in a light emitting device 2000C shown in FIG. 12E. The side surface of the second wavelength conversion layer 31F and the side surface of the layer 33 substantially not containing the wavelength conversion particles may be exposed from the light guide member 50. Further, as in the light emitting device 2000D shown in FIG. 12F, the side surface of the first wavelength conversion layer 31E and the side surface of the second wavelength conversion layer 31F are covered with the light guide member 50, and the layer 33 substantially not containing the wavelength conversion particles. May be exposed from the light guide member 50. As in the light emitting device 2000E shown in FIG. 12G, the side surface of the first wavelength conversion layer 31E, the side surface of the second wavelength conversion layer 31F, and the side surface of the layer 33 substantially containing no wavelength conversion particles are covered with the light guide member 50. May be. As shown in FIG. 12G, when the light guide member 50 covers the side surface of the first wavelength conversion layer 31E, the side surface of the second wavelength conversion layer 31F, and the side surface of the layer 33 substantially not containing the wavelength conversion particles, The light guide member 50 may be exposed from the first reflection member 40. Since the light guide member covers at least a part of the side surface of the light transmitting member, the light extraction efficiency of the light emitting device can be improved. When the side surface of the translucent member 30 has irregularities as in the light emitting device 2000F illustrated in FIG. 12H, the irregularities on the side surface of the translucent member 30 are covered with the light guide member 50, so that the light emitting device Light extraction efficiency can be improved.

  As in the light emitting device 2000G shown in FIG. 12I, the layer 33 that does not substantially contain the wavelength conversion particles includes the layer 33A that contains the reflective particles and the layer 33B that does not substantially contain the reflective particles. Is preferred. Since the layer 33A containing reflective particles is located on the first wavelength conversion layer and / or the second wavelength conversion layer, light from the light emitting element is diffused in the translucent member by the layer 33A containing reflective particles. You. Thereby, light from the first wavelength conversion particles and / or the second wavelength conversion particles excited by the light of the light emitting element can be increased. In addition, by disposing the layer 33B substantially containing no reflective particles on the layer 33A containing reflective particles, the layer 33B substantially containing no reflective particles serves as a protective layer of the layer 33A containing reflective particles. Function can be performed. When the upper surface of the translucent member 30 is ground for the purpose of reducing the thickness of the light emitting device or the like, a layer 33B containing substantially no reflective particles is disposed on the layer 33A containing the reflective particles. By doing so, it is possible to grind only the layer 33B that does not substantially contain reflective particles. Thereby, since the layer 33A containing the reflective particles is not ground, it is possible to suppress the variation in the amount of the reflective particles contained in the translucent member. When the layer 33 substantially not containing the wavelength conversion particles is only one layer containing the reflective particles, it is preferable that the reflective particles are unevenly distributed on the light extraction surface side of the light emitting element. In this manner, the base material of the layer 33 substantially not containing the wavelength conversion particles can function as a protective layer. Examples of the reflective particles include titanium oxide, zirconium oxide, aluminum oxide, and silicon oxide. Titanium oxide having a high refractive index is particularly preferable for the reflective particles. The content of the reflective particles in the layer that does not substantially contain the wavelength conversion particles can be appropriately selected, but is preferably, for example, 0.05 wt% or more and 0.1 wt% or less from the viewpoints of light reflectivity and viscosity in a liquid state.

  When the light-transmitting member includes the wavelength conversion particles as in the light-emitting device 2000H shown in FIG. 12J, the light-transmitting member may include a coating 34 that covers the upper surface of the light-transmitting member 30. The coating 34 is an aggregate of coating particles that are nanoparticles. In addition, the coating may be only coating particles or may include coating particles and a resin material. When the refractive index of the coating is different from the refractive index of the base material of the translucent member located on the outermost surface, it is possible to correct the emission chromaticity of the light emitting device. The base material of the light-transmitting member located on the outermost surface means a base material of a layer that forms a surface of the light-transmitting member that is opposite to a surface on the light extraction surface side of the light-emitting element. For example, when the refractive index of the coating 34 is larger than the refractive index of the base material of the light-transmitting member located on the outermost surface, the reflected light component at the interface between the coating and air is less than that of the light-transmitting member located on the outermost surface. It is larger than the reflected light component at the interface between the base material and air. For this reason, the reflected light component returning to the translucent member can be increased, so that the wavelength conversion particles are easily excited. Thereby, the emission chromaticity of the light emitting device can be corrected to the longer wavelength side. If the refractive index of the coating 34 is smaller than the refractive index of the base material of the translucent member located on the outermost surface, the reflected light component at the interface between the coating and air is the interface between the base material of the translucent member and the air. Is smaller than the reflected light component at. Thereby, the reflected light component returning to the translucent member can be reduced, so that it becomes difficult to excite the wavelength conversion particles. Thereby, the emission chromaticity of the light emitting device can be corrected to the shorter wavelength side. For example, when a phenyl-based silicone resin is used as a base material of the light-transmitting member located on the outermost surface, titanium oxide, titanium oxide, aluminum oxide, or the like is used as a coating particle for correcting the emission chromaticity of the light emitting device to a longer wavelength side. Is mentioned. When a base material of the light-transmitting member located on the outermost surface uses a phenyl-based silicone resin, silicon oxide or the like is used as a coating particle for correcting the emission chromaticity of the light emitting device to a shorter wavelength side. When the light-emitting device includes a plurality of light-transmitting members, the upper surface of one light-transmitting member may be covered with a coating, and the upper surface of the other light-transmitting member may not be covered with the coating. Whether to form a coating covering the upper surface of the translucent member in accordance with the correction of the emission chromaticity of the light emitting device can be appropriately selected. In the case where the light-emitting device includes a plurality of light-transmitting members, the upper surface of one of the light-transmitting members is covered with a coating having a refractive index larger than the refractive index of the base material of the light-transmitting member located on the outermost surface. Alternatively, the upper surface of the other light-transmitting member may be covered with a film having a refractive index smaller than that of the base material of the light-transmitting member located on the outermost surface. The material of the coating covering the light-transmitting member can be appropriately selected in accordance with the correction of the emission chromaticity of the light-emitting device. The coating can be formed by a known method such as potting with a dispenser, spraying with an inkjet or a spray.

  Like the substrate 10 shown in FIG. 12K, the first wiring 12 preferably includes a narrow portion having a short length in the Y direction and a wide portion having a long length in the Y direction when viewed from the front. The length D4 of the narrow portion in the Y direction is shorter than the length D5 of the wide portion in the Y direction. The narrow portion is separated from the center of the via 15 in the X direction in a front view, and is located at a portion where the electrode of the light emitting element is located in the X direction. The wide portion is located at the center of the via 15 in a front view. Since the first wiring 12 includes the narrow portion, the area of the conductive adhesive member that electrically connects the electrode of the light emitting element and the first wiring can be reduced on the first wiring. This makes it easier to control the shape of the conductive adhesive member. The peripheral portion of the first wiring may have a rounded shape.

  As shown in FIG. 10, the light guide member 50 includes a light extraction surface 201A of the first light emitting element 20A, a side surface 202A of the first light emitting element 20A, a light extraction surface 201B of the second light emitting element 20B, and a second light emission surface. The side surface 202B of the element 20B may be continuously coated. By doing so, the light of the first light emitting element 20A and / or the light of the second light emitting element 20B can be extracted between the light extracting surface 201A of the first light emitting element 20A and the light extracting surface 201B of the second light emitting element 20B. Therefore, uneven brightness of the light emitting device can be suppressed. When the light emission peak wavelength of the first light emitting element 20A is different from the light emission peak wavelength of the second light emitting element 20B, the light from the first light emitting element 20A and the light from the second light emitting element 20B in the light guide member 50. Can be mixed, so that color unevenness of the light emitting device can be suppressed.

  The light emitting device may include an insulating film 18 covering a part of the second wiring 13. Provision of the insulating film 18 can ensure insulation on the back surface and prevent short circuit. Further, it is possible to prevent the second wiring from peeling off from the base material.

<Embodiment 3>
The light emitting device 3000 according to the third embodiment of the present invention illustrated in FIGS. 13A to 18B is different from the light emitting device 2000 according to the second embodiment in the number of the light emitting elements mounted on the substrate and the recess provided in the base material. And the number of vias, the shape of the base material, the shape of the depression, the configuration of the light-transmitting member, and the provision of the second reflection member and the third reflection member.

  As shown in FIG. 14A, the via 15 is in contact with the first wiring 12, the second wiring 13, and the third wiring 14, so that the heat radiation of the light emitting device 3000 can be improved. The number of depressions and vias provided in the base material can be appropriately changed depending on the size of the substrate and the like.

  As shown in FIG. 14A, the base material 11 may include a recess 111A on the front surface 111. When the substrate 11 includes the concave portion 111A, the contact area between the first reflection member and the substrate 11 can be increased. Thereby, the bonding strength between the first reflection member and the base material can be improved. The recesses 111A are preferably located at both ends in the longitudinal direction (X direction) of the front surface 111. By doing so, the bonding strength between the first reflective member and the first reflective member can be improved at both ends of the base material, so that the first reflective member and the base material can be prevented from peeling off.

  As shown in FIGS. 15 and 16, the substrate 10 has an opening at the back and bottom of the base material, a central recess 16A spaced from the side surface 105 of the base material, and an opening at the back, bottom and side surfaces 105 of the base material. End recess 16B. The side 105 of the substrate is located between the front and back of the substrate. By providing the substrate 10 with the end recess 16B, the bonding strength with the mounting substrate at the end of the light emitting device can be improved. When a plurality of end depressions 16B are provided, it is preferable that the end depressions be located at both ends of the base material in rear view. By doing so, the bonding strength of the mounting substrate of the light emitting device is improved. The substrate 10 may include only the central depression 16A or the end depression 16B. In addition, in this specification, a hollow refers to a central hollow and / or an end hollow. As illustrated in FIG. 15, there are a plurality of vias 15, and the vias 15 may include a via overlapping with the central depression 16 </ b> A and a via overlapping with the end depression 16 </ b> B in rear view.

  As shown in FIG. 14A, the light emitting device 3000 may include a first light emitting element 20A, a second light emitting element 20B, and a third light emitting element 20C. Note that the light emitting device may include four or more light emitting elements. In this specification, a light emitting element refers to the first light emitting element 20A, the second light emitting element 20B, and / or the third light emitting element 20C. As shown in FIG. 17A, it is preferable that the first light emitting element 20A, the second light emitting element 20B, and the third light emitting element 20C be located side by side in the longitudinal direction (X direction) in a front view. By doing so, the light emitting device can be made thinner in the Y direction. When the light extraction surfaces of the first light emitting element and the second light emitting element are rectangular, the short side 2011A of the light extraction surface of the first light emitting element and the short side 2011B of the light extraction surface of the second light emitting element are opposed to each other. Is preferred. When the light extraction surfaces of the second light emitting element and the third light emitting element are rectangular, the short side 2012B of the light extraction surface of the second light emitting element and the short side 2011C of the light extraction surface of the third light emitting element are opposed to each other. Is preferred. By doing so, the light emitting device can be made thinner in the Y direction. In the present specification, a rectangle means a quadrangle having two long sides and two short sides and four inner angles being right angles. In addition, in this specification, a right angle means 90 ± 3 °.

  The emission peak wavelength of the first light emitting element 20A, the emission peak wavelength of the second light emitting element 20B, and the emission peak wavelength of the third light emitting element 20C may be the same or different. Since the emission peak wavelength of the first light emitting element 20A, the emission peak wavelength of the second light emitting element 20B, and the emission peak wavelength of the third light emitting element 20C are different, a light emitting device with high color rendering properties can be obtained. When the first light emitting element 20A, the second light emitting element 20B, and the third light emitting element 20C are arranged in order, the light emitting peak wavelength of the first light emitting element 20A and the light emitting peak wavelength of the third light emitting element 20C are the same. In addition, the emission peak wavelength of the second light emitting element 20B may be different from the emission peak wavelength of the first light emitting element 20A. By doing so, for example, when the output of the first light emitting element 20A is insufficient, the third light emitting element 20C can make up for it. A second light emitting element 20B having an emission peak wavelength different from the emission peak wavelength of the first light emitting element 20A and the emission peak wavelength of the third light emitting element 20C is located between the first light emitting element 20A and the third light emitting element 20C. By doing so, the color rendering properties of the light emitting device can be increased, and color unevenness can be reduced. In the present specification, the same as the emission peak wavelength means that a fluctuation of about ± 10 nm is allowed. When the emission peak wavelength of the first light emitting element 20A is in the range of 430 nm to less than 490 nm (the wavelength range in the blue region), the emission peak wavelength of the third light emitting element 20C may be in the range of 430 nm to less than 490 nm. preferable. By doing so, the excitation efficiency of the wavelength conversion particles can be improved by selecting the wavelength conversion particles having a peak of the excitation efficiency in the range of 430 nm or more and less than 490 nm.

  As shown in FIG. 14A, the light extraction surface 201A of the first light emitting element 20A and the light extraction surface 201B of the second light emitting element 20B may be located at substantially the same height in the Z direction, and may be positioned in the Z direction. The light extraction surface 201A of the first light emitting element 20A and the light extraction surface 201B of the second light emitting element 20B may be located at different heights. For example, as in the light emitting device 3000A shown in FIG. 14B, the light extraction surface 201A of the first light emitting element 20A may be located lower than the light extraction surface 201B of the second light emitting element 20B in the Z direction. Since the light extraction surface 201A of the first light emitting element 20A is located below the light extraction surface 201B of the second light emitting element 20B in the Z direction, light from the second light emitting element 20B spreads in the longitudinal direction (X direction). It will be easier. Further, as in the light emitting device 3000B shown in FIG. 14C, the light extraction surface 201A of the first light emitting element 20A may be located above the light extraction surface 201B of the second light emitting element 20B in the Z direction. Since the light extraction surface 201A of the first light emitting element 20A is located above the light extraction surface 201B of the second light emitting element 20B in the Z direction, light from the first light emitting element 20A can easily spread in the longitudinal direction (X direction). Become.

  As shown in FIG. 17A, the length of the short side 2011A of the light extraction surface 201A of the first light emitting element 20A and the length of the short side 2011B of the light extraction surface 201B of the second light emitting element 20B may be substantially the same. The shorter side 2011A of the light extraction surface 201A of the light emitting element 20A and the shorter side 2011B of the light extraction surface 201B of the second light emitting element 20B may have different lengths. For example, as shown in FIG. 17B, the length of the short side 2011A of the light extraction surface 201A of the first light emitting element 20A may be longer than the length of the short side 2011B of the light extraction surface 201B of the second light emitting element 20B. . By doing so, the light from the first light emitting element 20A easily spreads in the longitudinal direction (X direction). Also, as shown in FIG. 17C, the length of the short side 2011A of the light extraction surface 201A of the first light emitting element 20A may be shorter than the length of the short side 2011B of the light extraction surface 201B of the second light emitting element 20B. . By doing so, the light from the second light emitting element 20B easily spreads in the longitudinal direction (X direction).

  As shown in FIG. 14A, the light transmitting member 30 includes a first light transmitting layer 31A facing the light extraction surface of the light emitting element, and a wavelength conversion layer 31B disposed on the first light transmitting layer 31A. You may. The first light transmitting layer 31A includes a base material 312A and first diffusion particles 311A. The wavelength conversion layer 31B includes the base material 312B and the wavelength conversion particles 32. Since the light transmitting member 30 includes the first light transmitting layer 31A facing the light extraction surface of the light emitting element, light from the first light emitting element and the second light emitting element is diffused by the first light transmitting layer 31A. . Thereby, the light of the first light emitting element, the second light emitting element, and / or the light of the third light emitting element can be mixed in the first light transmitting layer 31A, so that the luminance unevenness of the light emitting device can be reduced. When the first light emitting element, the second light emitting element, and / or the third light emitting element have different emission peak wavelengths, light of the first light emitting element, the second light emitting element, and / or the third light emitting element is transmitted through the first light emitting element. Since it can be mixed in the layer 31A, color unevenness of the light emitting device can be reduced.

  It is preferable that the first light transmitting layer 31A does not substantially include the wavelength conversion particles. The wavelength conversion particles absorb a part of the light from the light emitting element when excited by the light of the light emitting element. Since the first light transmitting layer 31A is between the light extraction surface of the light emitting element and the wavelength conversion layer, the first light emitting element, the second light emitting element, and / or the light of the light emitting element is absorbed before the light of the wavelength conversion particles is absorbed by the wavelength conversion particles. The light of the third light emitting element can be mixed with the light of the first light emitting element and the light of the second light emitting element in the first light transmitting layer 31A. Thereby, it is possible to suppress a decrease in light extraction efficiency of the light emitting device.

  As shown in FIG. 14A, the second light transmitting layer 31C may be located on the wavelength conversion layer 31B. The second light transmitting layer 31C is a layer that does not substantially contain the wavelength conversion particles. The second light transmitting layer 31C may include a base material 312C and second diffusion particles 311C. Since the second light transmitting layer 31C includes the second diffusion particles 311C, light from the light emitting element and light from the wavelength conversion particles excited by the light emitting element can be mixed in the second light transmitting layer. it can. Thereby, color unevenness of the light emitting device can be reduced. For example, the second diffusion particles may be a material having a lower refractive index than the first diffusion particles. By doing so, the amount of light diffused by the second diffusion particles is reduced, so that the light extraction efficiency of the light emitting device is improved. As a material in which the second diffusion particles have a lower refractive index than the first diffusion particles, titanium oxide can be selected for the first diffusion particles and silicon oxide can be selected for the second diffusion particles.

  As shown in FIG. 14A, the second reflection member 41 that covers the electrode forming surface 203A of the first light emitting element 20A, the electrode forming surface 203B of the second light emitting element 20B, and / or the electrode forming surface 203C of the third light emitting element 20C is formed. You may have. When the light emitting device includes the second reflection member 41, light from the light emitting element can be suppressed from being absorbed by the substrate 10. Further, as shown in FIGS. 2A, 10 and 12B, the first reflection member may cover the electrode forming surface of the light emitting element. By doing so, it is possible to suppress the light from the light emitting element from being absorbed by the substrate. Further, it is preferable that the second reflection member 41 includes an inclined portion whose thickness in the Z direction increases as the distance from the light emitting element increases. When the second reflection member 41 has the inclined portion, the light extraction efficiency of the light emitting device is improved.

  As shown in FIG. 14A, a third reflection member 42 may be provided between the light guide member 50 and the first reflection member. The third reflection member 42 covers the side surface of the light emitting element via the light guide member. By forming the light guide member 50 by potting or the like after the formation of the third reflection member 42, it is possible to suppress variation in the shape of the light guide member 50. The surface of the third reflecting member 42 facing the light transmitting member 30 is preferably flat. This makes it easier to form the translucent member 30 after forming the third reflecting member 42. When the light emitting device includes the third reflection member 42, the first reflection member covers the first and second element side surfaces via the third reflection member and the light guide member.

  A light-emitting device 3000C illustrated in FIG. 18A may include a covering member that covers the light extraction surface of the light-emitting element. When the covering member 31D includes the diffusion particles 311D, by providing the covering member 31D covering the light extraction surface, light from the light emitting element traveling in the Z direction is reduced, and traveling in the X direction and / or the Y direction. Light can be increased. Thereby, light from the light emitting element can be diffused in the light guide member, so that uneven brightness of the light emitting device can be suppressed. Note that the covering member 31D is located between the light extraction surface of the light emitting element and the light guide member 50. The first covering member 31D including the diffusion particles 311D preferably exposes at least a part of the side surface of the light emitting element. In this manner, light from the light emitting element traveling in the X direction and / or the Y direction is reduced. Can be suppressed. The covering member 31D may cover each light extraction surface of the first light emitting element, the second light emitting element, and the third light emitting element, and may cover the light extraction surface of the first light emitting element, the second light emitting element, or the third light emitting element. Only one of the light extraction surfaces may be covered.

The covering member 31D may include wavelength conversion particles. The color adjustment of the light emitting device is facilitated by covering the light extraction surface of the light emitting element and providing the coating member 31D including the wavelength conversion particles. The wavelength conversion particles included in the covering member 31D may be the same as or different from the wavelength conversion particles included in the wavelength conversion layer. For example, when the peak wavelength of light emission of the light emitting element is in a range of 490 nm to 570 nm (wavelength range of a green region), the wavelength conversion particles include a CASN-based phosphor excited by light in a range of 490 nm to 570 nm. And / or SCASN phosphors are preferred. Alternatively, a phosphor of (Sr, Ca) LiAl ₃ N ₄ : Eu may be used as the wavelength conversion particles.

  One covering member 31D may cover the light extraction surface of one light emitting element as in the light emitting device 3000C illustrated in FIG. 18A, and a plurality of covering members 31D may cover one light emitting surface as in the light emitting device 3000D illustrated in FIG. 18B. The light extraction surface of the light emitting element may be covered. As shown in FIG. 18B, the light extraction efficiency of the light emitting element is improved by exposing a part of the light extraction surface from the covering member 31D.

<Embodiment 4>
The light emitting device 4000 according to the fourth embodiment of the present invention illustrated in FIG. 19 is different from the light emitting device 2000 according to the second embodiment in the configuration of the light transmitting member.

  The light-transmitting member 30 of the light-emitting device 4000 includes a first light-transmitting member 30A that covers the first light-emitting element 20A, and a second light-transmitting member 30B that covers the second light-emitting element 20B. The first light transmissive member 30A and the second light transmissive member 30B are different in the constituent members and / or the contents of the constituent members. For example, the type of wavelength conversion particles and / or the content of the wavelength conversion particles contained in the first light transmissive member 30A and the second light transmissive member 30B are different. This facilitates color adjustment of the light emitting device. As shown in FIG. 19, the first light-transmissive member 30A may contain wavelength conversion particles, and the second light-transmissive member 30B may not substantially contain wavelength conversion particles. By doing so, the light extraction efficiency from the second light emitting element 20B can be improved. For example, the emission peak wavelength of the first light emitting element 20A is in a range from 430 nm to less than 490 nm (wavelength range in a blue region), and the emission peak wavelength of the second light emitting element 20B is in a range from 490 nm to 570 nm (wavelength range in a green region). ), The first light-transmissive member 30A contains wavelength-converting particles that emit green light and / or the wavelength-converting particles that emit red light, and the second light-transmissive member 30B does not substantially contain wavelength-converting particles. May be. Note that the first light-transmitting member 30A and the second light-transmitting member 30B may not substantially contain the wavelength conversion particles. Further, the emission peak wavelengths of the first light emitting element 20A and the second light emitting element may be the same or different.

  Hereinafter, each component in the light emitting device according to one embodiment of the present invention will be described.

(Substrate 10)
The substrate 10 is a member on which the light emitting element is mounted. The substrate 10 includes at least a base 11, a first wiring 12, a second wiring 13, a third wiring 14, and a via 15.

(Base material 11)
The base material 11 can be configured using an insulating member such as a resin or a fiber-reinforced resin, ceramics, and glass. Examples of the resin or the fiber-reinforced resin include epoxy, glass epoxy, bismaleimide triazine (BT), and polyimide. Examples of the ceramic include aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, and a mixture thereof. Among these substrates, it is particularly preferable to use a substrate having physical properties close to the linear expansion coefficient of the light emitting element. The lower limit of the thickness of the base material can be appropriately selected, but from the viewpoint of the strength of the base material, is preferably 0.05 mm or more, and more preferably 0.2 mm or more. In addition, the upper limit of the thickness of the base material is preferably 0.5 mm or less, more preferably 0.4 mm or less, from the viewpoint of the thickness (depth) of the light emitting device.

(First Wiring 12, Second Wiring 13, Third Wiring 14)
The first wiring is arranged on the front of the substrate and is electrically connected to the light emitting element. The second wiring is disposed on the back surface of the substrate, and is electrically connected to the first wiring via a via. The third wiring covers the inner wall of the depression and is electrically connected to the second wiring. The first wiring, the second wiring, and the third wiring can be formed using copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, or an alloy thereof. A single layer or a multilayer of these metals or alloys may be used. In particular, copper or a copper alloy is preferable from the viewpoint of heat dissipation. In addition, from the viewpoint of wettability and / or light reflectivity of the conductive adhesive member, a layer of silver, platinum, aluminum, rhodium, gold, or an alloy thereof is formed on the surface layer of the first wiring and / or the second wiring. May be provided.

(Via 15)
The via 15 is a member provided in a hole penetrating the front surface and the back surface of the base material 11 and electrically connecting the first wiring and the second wiring. The via 15 may be constituted by a fourth wiring 151 covering the surface of the through-hole of the base material, and a filling member 152 filled in the fourth wiring 151. As the fourth wiring 151, the same conductive member as the first wiring, the second wiring, and the third wiring can be used. As the filling member 152, a conductive member or an insulating member may be used.

(Insulating film 18)
The insulating film 18 is a member that ensures insulation on the back surface and prevents short circuit. The insulating film may be formed of any of those used in the art. For example, a thermosetting resin or a thermoplastic resin may be used.

(Light emitting element 20)
The light emitting element 20 is a semiconductor element that emits light by itself when a voltage is applied, and a known semiconductor element made of a nitride semiconductor or the like can be applied. The light emitting element 20 includes, for example, an LED chip. The light emitting element 20 includes at least a semiconductor laminate 23, and often further includes an element substrate 24. The top-view shape of the light-emitting element is preferably a rectangle, particularly a square shape or a rectangular shape that is long in one direction. However, other shapes may be used. For example, a hexagonal shape can enhance luminous efficiency. The side surface of the light emitting element may be perpendicular to the upper surface, or may be inclined inward or outward. Further, the light emitting element has positive and negative electrodes. The positive and negative electrodes can be made of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel or an alloy thereof. The emission peak wavelength of the light emitting element can be selected from the ultraviolet region to the infrared region depending on the semiconductor material and its mixed crystal ratio. As the semiconductor material, it is preferable to use a nitride semiconductor, which is a material capable of emitting short-wavelength light capable of efficiently exciting the wavelength conversion particles. Nitride semiconductor is represented by mainly general formula _{In x Al y Ga 1-x} -y N (0 ≦ x, 0 ≦ y, x + y ≦ 1). The light emission peak wavelength of the light emitting element is preferably 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less, and more preferably 450 nm or more and 475 nm or less, from the viewpoints of luminous efficiency, excitation of the wavelength conversion particles, and color mixing with emission thereof. More preferred. In addition, an InAlGaAs-based semiconductor, an InAlGaP-based semiconductor, zinc sulfide, zinc selenide, silicon carbide, or the like can be used. The element substrate of the light-emitting element is a substrate for crystal growth capable of mainly growing a crystal of a semiconductor constituting the semiconductor laminate, but may be a bonding substrate for bonding to a semiconductor element structure separated from the substrate for crystal growth. . When the element substrate has a light-transmitting property, flip-chip mounting can be easily adopted, and light extraction efficiency can be easily increased. Examples of the base material of the element substrate include sapphire, gallium nitride, aluminum nitride, silicon, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, zinc sulfide, zinc oxide, zinc selenide, and diamond. Sapphire is particularly preferred. The thickness of the element substrate can be appropriately selected and is, for example, 0.02 mm or more and 1 mm or less, and is preferably 0.05 mm or more and 0.3 mm or less from the viewpoint of the strength of the element substrate and / or the thickness of the light emitting device. .

(Translucent member 30)
The translucent member is a member provided on the light emitting element and protecting the light emitting element. The translucent member is composed of at least the following base material. The translucent member can function as wavelength conversion particles by including the following wavelength conversion particles 32 in the base material. The base material of each layer of the translucent member is configured as follows. The base material of each layer may be the same or different. It is not essential that the translucent member has the wavelength conversion particles. Further, as the translucent member, a sintered body of the wavelength conversion particles and an inorganic substance such as alumina, or a plate-like crystal of the wavelength conversion particles can be used.

(Base material 31 of translucent member)
The base material 31 of the light-transmitting member may be any as long as it has a property of transmitting light emitted from the light-emitting element. Note that “light-transmitting” means that the light transmittance of the light-emitting element at a light emission peak wavelength is preferably 60% or more, more preferably 70% or more, and even more preferably 80% or more. Say that. As a base material of the translucent member, a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or a modified resin thereof can be used. It may be glass. Among them, silicone resins and modified silicone resins are preferable because of their excellent heat resistance and light resistance. Specific silicone resins include dimethyl silicone resin, phenyl-methyl silicone resin, and diphenyl silicone resin. The translucent member can be configured by using one of these base materials in a single layer or by stacking two or more of these base materials. Note that "modified resin" in the specification includes a hybrid resin. Further, the base material of the light-transmitting member includes the base materials of the first light-transmitting layer, the wavelength conversion layer, and the second light-transmitting layer.

The base material of the translucent member may contain various diffusion particles in the resin or glass. Examples of the diffusion particles include silicon oxide, aluminum oxide, zirconium oxide, and zinc oxide. As the diffusion particles, one of these can be used alone, or two or more of them can be used in combination. In particular, silicon oxide having a small coefficient of thermal expansion is preferable. In addition, by using nanoparticles as the diffusion particles, scattering of light emitted from the light-emitting element can be increased, and the amount of the wavelength conversion particles used can be reduced. Note that “means particles having a particle size of 1 nm to 100 nm. Further, "particle size" herein, for example, it is defined by the D _50.

(Wavelength conversion particles 32)
The wavelength conversion particles absorb at least a part of the primary light emitted from the light emitting element and emit secondary light having a different wavelength from the primary light. As the wavelength conversion particles, one of the following specific examples can be used alone, or two or more can be used in combination.

Examples of the wavelength conversion particles that emit green light include yttrium / aluminum / garnet-based phosphor (for example, Y ₃ (Al, Ga) ₅ O ₁₂ : Ce) and lutetium / aluminum / garnet-based phosphor (for example, Lu ₃ (Al, Ga)). ₅ O ₁₂ : Ce), terbium-aluminum-garnet-based phosphor (for example, Tb ₃ (Al, Ga) ₅ O ₁₂ : Ce) -based phosphor, and silicate-based phosphor (for example, (Ba, Sr) ₂ SiO ₄ : Eu) ), chloro silicate-based phosphor (e.g. _{Ca 8 Mg (SiO 4) 4} Cl 2: Eu), β -sialon-based phosphor (e.g. _{Si 6-z Al z O z} N 8-z: Eu (0 <z <4 .2)), SGS phosphor (e.g. SrGa ₂ S _4: Eu), alkaline earth aluminate phosphor (e.g. (Ba, Sr, Ca) Mg x _{l 10 O 16 + x: Eu} , Mn ( provided that 0 ≦ x ≦ 1)) and the like. As the wavelength conversion particles for yellow light emission, α-sialon-based phosphors (for example, M _z (Si, Al) ₁₂ (O, N) ₁₆ (where 0 <z ≦ 2, and M is Li, Mg, Ca, Y , And lanthanide elements excluding La and Ce) In addition, among the above-mentioned wavelength conversion particles that emit green light, there are wavelength conversion particles that emit yellow light. , Y can be shifted to the longer wavelength side by substituting a part of Y with Gd, and yellow light emission is possible. Examples of the wavelength conversion particles that emit red light include a nitrogen-containing calcium aluminosilicate (CASN or SCASN) -based phosphor (for example, (Sr, Ca) AlSiN ₃ : Eu). In addition, in the manganese-activated fluoride phosphor (a phosphor represented by general formula _{(I) A 2 [M 1} -a Mn a F 6] ( where the general formula (I), A is, K , Li, Na, Rb, Cs, and at least one element selected from the group consisting of NH ₄ , M is at least one element selected from the group consisting of Group 4 elements and Group 14 elements, and a Satisfies 0 <a <0.2)) A typical example of the manganese-activated fluoride-based phosphor is a manganese-activated potassium fluorosilicate phosphor (for example, K ₂ SiF ₆ : Mn). .

(Reflection member (first reflection member, second reflection member and / or third reflection member))
The reflection member refers to the first reflection member, the second reflection member, and / or the third reflection member. From the viewpoint of light extraction efficiency in the Z direction, the reflection member preferably has a light reflectance of 70% or more, more preferably 80% or more, and more preferably 90% or more at the light emission peak wavelength of the light emitting element. It is even more preferred. Further, the reflection member is preferably white. Therefore, it is preferable that the reflecting member contains a white pigment in the base material. The reflection member goes through a liquid state before being cured. The reflection member can be formed by transfer molding, injection molding, compression molding, potting, or the like. When the light emitting device includes the first reflecting member, the second reflecting member, and / or the third reflecting member, for example, the third reflecting member is formed by drawing, and the first reflecting member and the second reflecting member are potted. It may be formed.

(Base material of reflective member)
A resin can be used as a base material of the reflection member, and examples thereof include a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, and modified resins thereof. Among them, silicone resins and modified silicone resins are preferable because of their excellent heat resistance and light resistance. Specific silicone resins include dimethyl silicone resin, phenyl-methyl silicone resin, and diphenyl silicone resin.

(White pigment)
White pigments include titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, zirconium oxide, One of the silicon oxides can be used alone, or two or more of them can be used in combination. The shape of the white pigment can be appropriately selected and may be irregular or crushed, but is preferably spherical from the viewpoint of fluidity. The particle size of the white pigment may be, for example, about 0.1 μm or more and 0.5 μm or less. The content of the white pigment in the light-reflective reflecting member can be appropriately selected, but is preferably, for example, 10 wt% or more and 80 wt% or less, and is preferably 20 wt% or more and 70 wt% or less from the viewpoint of light reflectivity and viscosity in a liquid state. More preferably, it is more preferably 30 wt% or more and 60 wt% or less. In addition, "wt%" is a weight percent and represents the ratio of the weight of the material to the total weight of the light-reflective reflective member.

(Coating member 31D)
The covering member covers the light extraction surface of the light emitting element, diffuses the light from the light emitting element, or changes the light to a light having a peak wavelength different from the light having the peak wavelength of the light emitting element.

(Base material of covering member)
The same material as the base material of the translucent member can be used for the base material of the covering member.

(Diffusion particles of the covering member)
The same material as the diffusion particles of the translucent member can be used for the diffusion particles of the covering member.

(Light guide member 50)
The light guide member is a member that bonds the light emitting element and the light transmitting member and guides light from the light emitting element to the light transmitting member. The base material of the light guide member includes a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or a modified resin thereof. Among them, silicone resins and modified silicone resins are preferable because of their excellent heat resistance and light resistance. Specific silicone resins include dimethyl silicone resin, phenyl-methyl silicone resin, and diphenyl silicone resin. Further, the base material of the light guide member may contain the same filler and / or wavelength conversion particles as those of the above-mentioned light-transmitting member. Further, the light guide member can be omitted.

(Conductive adhesive member 60)
The conductive adhesive member is a member that electrically connects the electrode of the light emitting element and the first wiring. Examples of the conductive adhesive member include bumps of gold, silver, copper, and the like, metal pastes including metal powders such as silver, gold, copper, platinum, aluminum, and palladium and a resin binder, tin-bismuth, tin-copper, and tin. Any one of a solder such as a silver-based or gold-tin-based solder and a brazing material such as a low melting point metal can be used.

  A light emitting device according to an embodiment of the present invention includes a backlight device of a liquid crystal display, various lighting devices, a large display, various display devices such as advertisements and destination guidance, a projector device, a digital video camera, a facsimile, and a copy machine. And an image reading device in a scanner or the like.

1000, 1000A, 2000, 2000A, 3000, 3000A, 3000B, 3000C, 3000D Light emitting device 10 Substrate 11 Base material 12 First wiring 13 Second wiring 14 Third wiring 15 Via
151 fourth wiring
152 Filling member 16 Depression 18 Insulating film 20 Light emitting element 30 Light transmitting member 40 First reflecting member 41 Second reflecting member 42 Third reflecting member 50 Light guiding member 60 Conductive adhesive member

Claims (10)

A first wiring, a second wiring, a substrate provided with at least one depression, and a substrate having a via located inside the substrate,
At least one light emitting element mounted on the first wiring and electrically connected to the first wiring;
A first reflecting member;
With
The base material has a rectangular front surface, a back surface located on the opposite side of the front surface, a bottom surface adjacent to the front surface and orthogonal to the front surface, and a top surface located on the opposite side of the bottom surface,
The at least one depression is open to the bottom surface and the back surface of the substrate,
The first reflecting member covers a side surface of the light emitting element and the front surface of the substrate,
The first wiring and the second wiring are disposed on the front and back of the base material, respectively.
The via electrically connects the first wiring and the second wiring to each other,
The first wiring includes a first portion and a second portion that are continuous in the longitudinal direction of the rectangular shape in a front view,
The light emitting device according to claim 1, wherein a width of the first portion along the shorter side of the rectangular shape is larger than a width of the second portion.   The light emitting device according to claim 1, wherein the via is disposed at a position overlapping the first portion of the first wiring when viewed from the front. The at least one light emitting element has an electrode,
The light emitting device according to claim 1, wherein the second portion of the first wiring includes a portion overlapping the electrode of the at least one light emitting element when viewed from the front.   4. The light emitting device according to claim 1, wherein a center of the via overlaps the first portion of the first wiring in a front view. 5.   5. The light emitting device according to claim 1, wherein a depth of the at least one dent in the front direction from the back surface of the base is larger on the bottom surface side than on the top surface side of the base material. 6.   The light emitting device according to claim 1, wherein a lateral side surface of the first reflection member in a lateral direction and a lateral side surface of the substrate in a lateral direction are substantially coplanar. Further comprising a translucent member covering the light emitting element,
The light emitting device according to claim 1, wherein the first reflection member covers a side surface of the translucent member. The first reflection member has a longitudinal side surface on the bottom surface side and the top surface side of the base material,
Among the side surfaces of the first reflection member, a side surface located on the bottom surface side of the base material, and a side surface located on the top surface side of the base material is provided inside the light emitting device in the front direction from the back surface. The light emitting device according to claim 1, wherein the light emitting device is inclined.   The light emitting device according to any one of claims 1 to 8, wherein the via is arranged at a position not overlapping with the at least one depression in a rear view.   The light emitting device according to claim 1, wherein the at least one recess is provided at a position overlapping the second portion of the first wiring when viewed from the front.

Images