JP6900979B2 - Light emitting device - Google Patents

Description

The present invention relates to a light emitting device.

The circuit board is provided with a recessed electrode that serves as a connection surface with the motherboard and a through hole that electrically connects the recessed electrode and the electrode pattern, and the recessed electrode is electrically soldered to the electrode of the motherboard. A light emitting device that is connected and fixed is known (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2012-124191

Since the amount of heat generated is increasing as the output of the light emitting element (LED element) is increased, a light emitting device having high heat dissipation is required. Therefore, an embodiment of the present invention aims to provide a light emitting device having high heat dissipation.

The light emitting device according to one aspect of the present invention has a front surface extending in a first direction in the longitudinal direction and a second direction in the lateral direction, a back surface located on the opposite side of the front surface, and adjacent to the front surface. A substrate including a base material having a bottom surface orthogonal to the front surface and an upper surface located on the opposite side of the bottom surface, a first wiring arranged on the front surface, and a second wiring arranged on the back surface. And at least one light emitting element that is electrically connected to the first wiring and placed on the first wiring, and a first reflecting member that covers the side surface of the light emitting element and the front surface of the substrate. The light emitting device includes at least one recess that opens to the back surface and the bottom surface, and the substrate covers the inner wall of the recess and is electrically connected to the second wiring. A third wiring to be formed, and vias in contact with the first wiring, the second wiring, and the third wiring are provided.

According to the light emitting device of the embodiment according to the present invention, it is possible to provide a light emitting device having high heat dissipation.

FIG. 1A is a schematic perspective view of the light emitting device according to the first embodiment. FIG. 1B is a schematic perspective view of the light emitting device according to the first embodiment. FIG. 1C is a schematic front view of the light emitting device according to the first embodiment. FIG. 2A is a schematic cross-sectional view taken along the line 2A-2A of FIG. 1C. FIG. 2B is a schematic cross-sectional view taken along the line 2B-2B of FIG. 1C. FIG. 3 is a schematic rear view of the light emitting device according to the first embodiment. FIG. 4A is a schematic perspective view of the base material, vias, and the third wiring according to the first embodiment. FIG. 4B is a schematic perspective view of the base material, vias, and the third wiring according to the first embodiment. FIG. 4C is a schematic perspective view of the base material, vias, and the third wiring according to the first embodiment. FIG. 5 is a schematic bottom view of the light emitting device according to the first embodiment. FIG. 6A is a schematic cross-sectional view of the light emitting device according to the first embodiment and an enlarged view showing the inside of the dotted line portion in an enlarged manner. FIG. 6B is a schematic cross-sectional view of a modified example of the light emitting device according to the first embodiment, and an enlarged view showing the inside of the dotted line portion in an enlarged manner. FIG. 7A is a schematic front view of the substrate according to the first embodiment. FIG. 7B is a schematic front view of a modified example of the substrate according to the first embodiment. FIG. 7C is a schematic front view of a modified example of the substrate according to the first embodiment. FIG. 8 is a schematic right side view of the light emitting device according to the first embodiment. FIG. 9A is a schematic perspective view of the light emitting device according to the second embodiment. FIG. 9B is a schematic perspective view of the light emitting device according to the second embodiment. FIG. 9C is a schematic front view of the light emitting device according to the second embodiment. FIG. 9D is a schematic bottom view of the light emitting device according to the second embodiment. FIG. 10 is a schematic cross-sectional view taken along the line 10A-10A of FIG. 9C. FIG. 11 is a schematic rear view of the light emitting device according to the second embodiment. FIG. 12A is a schematic perspective view of a modified example of the light emitting device according to the second embodiment. FIG. 12B is a schematic cross-sectional view of a modified example of the light emitting device according to the second embodiment. FIG. 12C is a schematic cross-sectional view of a modified example of the light emitting device according to the second embodiment. FIG. 12D is a schematic rear view of a modified example of the light emitting device according to the second embodiment. FIG. 12E is a schematic cross-sectional view of a modified example of the light emitting device according to the second embodiment. FIG. 12F is a schematic cross-sectional view of a modified example of the light emitting device according to the second embodiment. FIG. 12G is a schematic cross-sectional view of a modified example of the light emitting device according to the second embodiment. FIG. 12H is a schematic cross-sectional view of a modified example of the light emitting device according to the second embodiment. FIG. 12I is a schematic cross-sectional view of a modified example of the light emitting device according to the second embodiment. FIG. 12J is a schematic cross-sectional view of a modified example of the light emitting device according to the second embodiment. FIG. 12K is a schematic front view of the substrate according to the second embodiment. FIG. 13A is a schematic perspective view of the light emitting device according to the third embodiment. FIG. 13B is a schematic perspective view of the light emitting device according to the third embodiment. FIG. 13C is a schematic front view of the light emitting device according to the third embodiment. FIG. 14A is a schematic cross-sectional view taken along the line 14A-14A of FIG. 13C. FIG. 14B is a schematic cross-sectional view of a modified example of the light emitting device according to the third embodiment. FIG. 14C is a schematic cross-sectional view of a modified example of the light emitting device according to the third embodiment. FIG. 15 is a schematic rear view of the light emitting device according to the third embodiment. FIG. 16 is a schematic bottom view of the light emitting device according to the third embodiment. FIG. 17A is a schematic front view of the substrate, the first light emitting element, the second light emitting element, and the third light emitting element according to the third embodiment. FIG. 17B is a schematic front view of a modified example of the substrate, the first light emitting element, the second light emitting element, and the third light emitting element according to the third embodiment. FIG. 17C is a schematic front view of a modified example of the substrate, the first light emitting element, the second light emitting element, and the third light emitting element according to the third embodiment. FIG. 18A is a schematic cross-sectional view of a modified example of the light emitting device according to the third embodiment. FIG. 18B is a schematic cross-sectional view of a modified example of the light emitting device according to the third embodiment. FIG. 19 is a schematic cross-sectional view of a modified example of the light emitting device according to the fourth embodiment.

Hereinafter, embodiments of the invention will be described with reference to the drawings as appropriate. However, the light emitting device described below is for embodying the technical idea of the present invention, and the present invention is not limited to the following unless otherwise specified. Further, the contents described in one embodiment can be applied to other embodiments and modifications. Further, the size and positional relationship of the members shown in the drawings may be exaggerated in order to clarify the explanation.

<Embodiment 1>
The light emitting device 1000 according to the embodiment of the present invention will be described with reference to FIGS. 1A to 8B. The light emitting device 1000 includes a substrate 10, at least one light emitting element 20, and a first reflecting member 40. The substrate 10 includes a base material 11, a first wiring 12, a second wiring 13, a third wiring 14, and a via 15. The base material 11 has a front surface 111 extending in the first direction in the longitudinal direction and a second direction in the lateral direction, a back surface 112 located on the opposite side of the front surface, and a bottom surface adjacent to the front surface 111 and orthogonal to the front surface 111. It has 113 and a top surface 114 located on the opposite side of the bottom surface 113. The base material 11 further has at least one recess 16. The first wiring 12 is arranged on the front surface 111 of the base material 11. The second wiring 13 is arranged on the back surface 112 of the base material 11. The light emitting element 20 is electrically connected to the first wiring 12 and is placed on the first wiring 12. The first reflecting member 40 covers the side surface 202 of the light emitting element 20 and the front surface 111 of the substrate. At least one recess opens in the back surface 112 and the bottom surface 113. The third wiring 14 covers the inner wall of the recess and is electrically connected to the second wiring. The via 15 is in contact with the first wiring 12, the second wiring 13, and the third wiring 14. The via 15 electrically connects the first wiring 12, the second wiring 13, and the third wiring 14. Further, the via 15 penetrates the front surface 111 to the back surface 112 of the base material 11. In addition, in this specification, orthogonal means 90 ± 3 °.

The via 15 is in contact with the first wiring 12, the second wiring 13, and the third wiring 14. As a result, the heat from the light emitting element can be transferred from the first wiring 12 to the second wiring 13 and / or the third wiring 14 via the via 15, so that the heat dissipation of the light emitting device 1000 can be improved. When the via 15 is in contact with the second wiring 13 and the third wiring 14, the via 15 overlaps with the second wiring 13 and the third wiring 14 in the rear view as shown in FIG. When the board has a plurality of vias, all of the plurality of vias may be in contact with the first wiring, the second wiring, and the third wiring, and all of the plurality of vias may be in contact with the first wiring and the first wiring. It does not have to be in contact with the 2nd wiring and the 3rd wiring. For example, when the board has a plurality of vias, one via is in contact with the first wiring, the second wiring, and the third wiring, the other via is in contact with the first wiring, the second wiring, and the third wiring. It may be separated from. Since some of the vias are in contact with the first wiring, the second wiring, and the third wiring among the plurality of vias, the heat dissipation of the light emitting device can be improved. The via 15 is preferably circular in the rear view. By doing so, it can be easily formed by a drill or the like. When the via 15 has a circular shape in the rear view, the diameter of the via is preferably 100 μm or more and 150 μm or less. When the diameter of the via is 100 μm or more, the heat dissipation of the light emitting device is improved, and when the diameter of the via is 150 μm or less, the decrease in the strength of the substrate is reduced. In the present specification, the circular shape includes not only a perfect circle but also a shape close to this (for example, an elliptical shape or a shape in which the four corners of a quadrangle are chamfered into a large arc shape). In the rear view, it is preferable that the area where the via and the second wiring 13 overlap is larger than the area where the via and the third wiring 14 overlap. By doing so, the volume of the via can be increased, so that the heat dissipation of the light emitting device is improved. Further, the via is preferably located at the center of the substrate in the Y direction. By doing so, in the thickness of the base material from the end of the via to the end of the base material in the Y direction, the portion where the thickness of the base material becomes thin can be reduced, so that the strength of the base material is improved. ..

As shown in FIGS. 4A to 4C, the via 15 has a portion D1 in which the via 15 and the third wiring 14 are in contact with each other in the front direction (Z direction) from the back surface. By doing so, not only the via 15 and the third wiring 14 are in contact with each other in the X direction and the Y direction, but also the via 15 and the third wiring 14 are in contact with each other in the front direction (Z direction) from the back surface. The contact area between the via 15 and the third wiring 14 can be increased. As a result, the heat from the light emitting element is easily transferred from the first wiring 12 to the third wiring 14 via the via 15, so that the heat dissipation of the light emitting device 1000 can be improved. In this specification, the direction from the back to the front is also referred to as the Z direction.

The light emitting device 1000 can be fixed to the mounting substrate by a joining member such as solder formed in the recess 16. A force due to thermal expansion of the joining member or the like may be applied to the third wiring covering the inner wall of the recess 16. When the via 15 has a portion D1 in which the via 15 and the third wiring 14 are in contact with each other in the Z direction, the joint strength between the via 15 and the third wiring 14 is improved. As a result, it is possible to prevent the third wiring 14 from peeling from the base material 11 even if a force from a joining member or the like is applied to the third wiring.

The via 15 may be configured by filling the through hole of the base material with a conductive material, and as shown in FIG. 2A, the fourth wiring 151 and the fourth wiring 151 that cover the surface of the through hole of the base material. A filling member 152 filled in a region surrounded by the wiring 151 may be provided. The filling member 152 may be conductive or insulating. It is preferable to use a resin material for the filling member 152. Generally, the resin material before curing has higher fluidity than the metal material before curing, so that it is easy to fill the fourth wiring 151. Therefore, the use of a resin material for the filling member facilitates the manufacture of the substrate. Examples of the resin material that can be easily filled include epoxy resin. When a resin material is used as the filling member, it is preferable to include an additive member in order to reduce the coefficient of linear expansion. By doing so, the difference in the coefficient of linear expansion from the fourth wiring becomes small, so that it is possible to suppress the formation of a gap between the fourth wiring and the filling member due to heat from the light emitting element. Examples of the additive member include silicon oxide. Further, when a metal material is used for the filling member 152, heat dissipation can be improved. When the via 15 is formed by filling the through holes of the base material with a conductive material, it is preferable to use a metal material such as Ag or Cu having high thermal conductivity.

The number of recesses provided in the substrate may be one or plural. By having a plurality of recesses, the bonding strength between the light emitting device 1000 and the mounting substrate can be improved. The depth of the recess may be the same on the upper surface side and the bottom surface side, or may be deeper on the bottom surface side than on the top surface side. As shown in FIG. 2B, the depth of the recess 16 in the Z direction is deeper on the bottom surface side than on the upper surface side, so that the thickness W1 of the base material located on the upper surface side of the recess is located on the bottom surface side of the recess in the Z direction. The thickness of the base material to be processed can be made thicker than W2. As a result, it is possible to suppress a decrease in the strength of the base material. Further, since the depth W3 of the recess on the bottom surface side is deeper than the depth W4 of the recess on the top surface side, the volume of the bonding member formed in the recess is increased, so that the bonding strength between the light emitting device 1000 and the mounting substrate is increased. Can be improved. Even in the top light emitting type (top view type) in which the light emitting device 1000 mounts the back surface 112 of the base material 11 and the mounting substrate facing each other, the bottom surface 113 of the base material 11 and the mounting board are mounted facing each other. Even in the side light emitting type (side view type), the bonding strength with the mounting substrate can be improved by increasing the volume of the bonding member.

The bonding strength between the light emitting device 1000 and the mounting substrate can be improved particularly in the case of the side light emitting type. Since the depth of the recess in the Z direction is deeper on the bottom surface side than on the top surface side, the area of the recess opening on the bottom surface can be increased. By increasing the area of the recess opening on the bottom surface facing the mounting substrate, the area of the joining member located on the bottom surface can also be increased. As a result, the area of the bonding member located on the surface facing the mounting substrate can be increased, so that the bonding strength between the light emitting device 1000 and the mounting substrate can be improved.

The maximum depth of the recess in the Z direction is preferably 0.4 to 0.9 times the thickness of the base material in the Z direction. When the depth of the recess is deeper than 0.4 times the thickness of the base material, the volume of the bonding member formed in the recess increases, so that the bonding strength between the light emitting device and the mounting substrate can be improved. Since the depth of the recess is shallower than 0.9 times the thickness of the base material, it is possible to suppress a decrease in the strength of the base material.

As shown in FIG. 2B, the recess 16 preferably includes a parallel portion 161 extending from the back surface 112 in a direction parallel to the bottom surface 113 (Z direction). By providing the parallel portion 161, the area of the portion D1 where the via and the third wiring are in contact with each other can be increased in the Z direction, so that the heat dissipation of the light emitting device can be improved. Further, by providing the parallel portion 161 it is possible to increase the volume of the recess even if the area of the opening of the recess on the back surface is the same. By increasing the volume of the recess, the amount of bonding members such as solder that can be formed in the recess can be increased, so that the bonding strength between the light emitting device 1000 and the mounting substrate can be improved. In the present specification, "parallel" means that an inclination of about ± 3 ° is allowed. Further, in the cross-sectional view, the recess 16 includes an inclined portion 162 that inclines from the bottom surface 113 in the direction in which the thickness of the base material 11 increases. The inclined portion 162 may be a straight line or a curved portion.

The maximum height of the recess in the Y direction is preferably 0.3 to 0.75 times the thickness of the base material in the Y direction. Since the depth of the recess in the Y direction is longer than 0.3 times the thickness of the base material, the volume of the bonding member formed in the recess increases, so that the bonding strength between the light emitting device and the mounting substrate can be improved. it can. Since the length of the recess in the Y direction is shallower than 0.75 times the thickness of the base material, it is possible to suppress a decrease in the strength of the base material.

As shown in FIG. 3, the opening shape of the recess on the back surface is preferably a semicircular shape. Since the opening shape of the dent is a semicircular shape without corners, it is possible to suppress the concentration of stress related to the dent, and thus it is possible to prevent the base material from cracking. In the present specification, the semicircular shape includes not only a perfect semicircle but also a shape close to this (for example, an elliptical semicircular shape).

As shown in FIG. 3, when there are a plurality of recesses 16 on the back surface, they are preferably located symmetrically with respect to the center line 3C of the base material parallel to the second direction (Y direction). By doing so, when the light emitting device is mounted on the mounting substrate via the bonding member, the self-alignment works effectively, and the light emitting device can be mounted within the mounting range with high accuracy.

On the bottom surface, the depth of the depression in the Z direction may be substantially constant, and the depth of the depression may be different between the center and the end. As shown in FIG. 5, it is preferable that the central depth D2 of the recess 16 on the bottom surface is the maximum depth of the recess in the Z direction. By doing so, it is possible to increase the thickness D3 of the base material in the Z direction at the end of the recess in the X direction on the bottom surface, so that the strength of the base material can be improved. In the present specification, the center means that a fluctuation of about 5 μm is allowed. The recess 16 can be formed by a known method such as a drill or a laser.

As shown in FIG. 5, the first wiring 12 exposed from the first reflecting member 40 to the outer surface of the light emitting device is either left or right with respect to the center line 5C of the base material parallel to the second direction (Y direction). It is preferable that the position is biased to. By doing so, the polarity of the light emitting device can be recognized by the position of the first wiring 12 exposed from the first reflecting member 40 to the outer surface of the light emitting device. Further, the first wiring 12 exposed from the first reflecting member 40 to the outer surface of the light emitting device is located on either the left or right side with respect to the center line 5C of the base material parallel to the second direction (Y direction). In this case, the shape of the first wiring 12 located on the left side with respect to the center line 5C and exposed from the first reflecting member 40 to the outer surface of the light emitting device, and the shape of the first wiring 12 located on the right side with respect to the center line 5C and the first It is preferable that the shape of the first wiring 12 exposed from the reflecting member 40 to the outer surface of the light emitting device is different from that of the first wiring 12. By doing so, the polarity of the light emitting device can be recognized by the shape of the first wiring 12 exposed from the first reflecting member 40 to the outer surface of the light emitting device.

As shown in FIG. 6A, the first wiring 12, the second wiring 13, and / or the third wiring 14 may have a wiring main portion 12A and a plating 12B formed on the wiring main portion 12A. In the present specification, the wiring refers to the first wiring 12, the second wiring 13, and / or the third wiring 14. A known material such as copper can be used as the wiring main portion 12A. By having the plating 12B on the wiring main portion 12A, it is possible to improve the reflectance on the surface of the wiring and suppress sulfurization. For example, the nickel plating 120A containing phosphorus may be located on the wiring main portion 12A. Since the hardness of nickel is improved by containing phosphorus, the hardness of the wiring is improved by locating the nickel plating 120A containing phosphorus on the wiring main portion 12A. As a result, it is possible to prevent burrs from being generated in the wiring when the wiring is cut due to the individualization of the light emitting device or the like. The phosphorus-containing nickel plating may be formed by an electrolytic plating method or an electroless plating method.

As shown in FIG. 6A, it is preferable that the gold plating 120B is located on the outermost surface of the plating 12B. Since the gold plating is located on the outermost surface of the plating, oxidation and corrosion on the surfaces of the first wiring 12, the second wiring 13 and / or the third wiring 14 are suppressed, and good solderability can be obtained. It is possible to improve the reflectance and suppress sulfurization. The gold plating 120B located on the outermost surface of the plating 12B is preferably formed by an electrolytic plating method. The electrolytic plating method can reduce the content of catalytic poisons such as sulfur as compared with the electroless plating method. When an addition reaction type silicone resin using a platinum-based catalyst is cured at a position where it comes into contact with gold plating, the gold plating formed by the electrolytic plating method contains a small amount of sulfur, so that the reaction between sulfur and platinum can be suppressed. .. As a result, it is possible to prevent the addition reaction type silicone resin using the platinum-based catalyst from causing curing failure. When forming the gold plating 120B in contact with the phosphorus-containing nickel plating 120A, it is preferable that the phosphorus-containing nickel plating 120A and the gold plating 120B are formed by an electrolytic plating method. By forming the plating by the same method, the manufacturing cost of the light emitting device can be suppressed. The nickel plating may contain nickel, the gold plating may contain gold, and other materials may be contained.

The thickness of the nickel plating containing phosphorus is preferably thicker than the thickness of the gold plating. When the thickness of the nickel plating containing phosphorus is thicker than the thickness of the gold plating, it becomes easy to improve the hardness of the first wiring 12, the second wiring 13, or the third wiring 14. The thickness of the nickel plating containing phosphorus is preferably 5 times or more and 500 times or less, and more preferably 10 times or more and 100 times or less the thickness of the gold plating.

As in the light emitting device 1000A shown in FIG. 6B, in the wiring, nickel plating 120C containing phosphorus, palladium plating 120D, first gold plating 120E, and second gold plating 120F are laminated on the wiring main portion 12A. Plating 12B may be formed. By laminating nickel plating 120C containing phosphorus, palladium plating 120D, first gold plating 120E, and second gold plating 120F, for example, when copper of the wiring main portion 12A is used, copper is contained in the plating 12B. It can suppress the diffusion. As a result, it is possible to suppress a decrease in the adhesion of each layer of plating. Nickel plating 120C containing phosphorus, palladium plating 120D, and the first gold plating 120E may be formed on the wiring main portion 12A by the electrolytic plating method, and the second gold plating 120F may be formed by the electrolytic plating method. Since the second gold plating 120F formed by the electrolytic plating method is located on the outermost surface, it is possible to suppress curing failure of the addition reaction type silicone resin using a platinum-based catalyst.

As shown in FIG. 2A, the light emitting element 20 includes a mounting surface facing the substrate 10 and a light extraction surface 201 located on the opposite side of the mounting surface. The light emitting element 20 includes at least the semiconductor laminate 23, and the semiconductor laminate 23 is provided with positive and negative electrodes 21 and 22. The positive and negative electrodes 21 and 22 are formed on the same side surface of the light emitting element 20, and it is preferable that the light emitting element 20 is flip-chip mounted on the substrate 10. This eliminates the need for wires that supply electricity to the positive and negative electrodes of the light emitting element, so that the light emitting device can be miniaturized. When the light emitting element is mounted on a flip chip, the surface opposite to the electrode forming surface 203, which is the surface on which the positive and negative electrodes of the light emitting element are located, is designated as the light extraction surface 201. In the present embodiment, the light emitting element 20 has the element substrate 24, but the element substrate 24 may be removed. When the light emitting element 20 is flip-chip mounted on the substrate 10, the positive and negative electrodes 21 and 22 of the light emitting element are connected to the first wiring 12 via the conductive adhesive member 60.

When the light emitting element 20 is flip-chip mounted on the substrate 10, the first wiring 12 has a convex portion 121 at a position where it overlaps with the positive and negative electrodes 21 and 22 of the light emitting element 20 in the front view as shown in FIGS. 2A and 7A. It is preferable to have. Since the first wiring 12 includes the convex portion 121, when the first wiring 12 and the positive and negative electrodes 21 and 22 of the light emitting element are connected via the conductive adhesive member 60, the position between the light emitting element and the substrate due to the self-alignment effect. The alignment can be easily performed.

As shown in FIG. 7B, the first wiring 12 may include a wiring extending portion 123 extending in the X direction in the front view, and as shown in FIG. 7C, the first wiring 12 extends in the X direction. The unit 123 may not be provided. The wiring extending portion 123 has a width narrower than the width of the first wiring 12 that overlaps with the light emitting element 20 and extends from the portion of the first wiring 12 that overlaps with the light emitting element 20 in the front view. It is the part of. When the wiring extension portion extends in the X direction, the width of the first wiring portion overlapping the light emitting element and the width of the wiring extension portion are the widths in the Y direction, and the wiring extension portion extends in the Y direction. In this case, the width of the portion of the first wiring that overlaps with the light emitting element and the width of the wiring extension portion are the widths in the X direction. The wiring extending portion 123 may be extended to the outer edge of the base material in a front view, or may be separated from the outer edge of the base material. In the front view, when the wiring extending portion 123 is formed by extending in the X + direction and / or the X− direction from the position where the light emitting element is planned to be placed, the wiring is extended when the light emitting element is placed on the substrate. It can be placed using the part 123 as a mark. The X + direction on the X-axis is the direction from left to right in the front view, and the opposite direction of the X + direction is the X- direction. This makes it easy to mount the light emitting element on the substrate. The first wiring 12 may include only one wiring extension portion 123, or may include a plurality of wiring extension portions 123. When a plurality of wiring extension portions 123 are provided, it is preferable that the wiring extension portions 123 are located on both sides of the light emitting element in the X direction. By doing so, the wiring extension portions 123 located on both sides of the light emitting element can be used as a mark, so that the positioning accuracy of placing the light emitting element on the substrate is improved. Further, even when the translucent member is placed on the light emitting element, the wiring extending portion is formed so as to extend from the position where the translucent member is planned to be placed on the light emitting element in the top view. When the translucent member is placed on the surface, the wiring extension portion can be placed on the mark. This makes it easy to place the translucent member on the light emitting element. When the first wiring 12 does not include the wiring extending portion 123 extending in the X direction, the contact area between the base material and the reflective member can be increased in the X direction. As a result, the bonding strength between the base material and the reflective member can be improved. Further, when the first wiring 12 does not include the wiring extending portion 123 extending in the X direction, the conductive adhesive member does not get wet and spread on the wiring extending portion 123 extending in the X direction. As a result, the area where the conductive adhesive member gets wet and spreads can be reduced, so that the shape of the conductive adhesive member can be easily controlled.

As shown in FIG. 7A, the first wiring 12 may include a wiring extending portion extending in the Y direction, and as shown in FIG. 7B, the first wiring 12 includes a wiring extending portion extending in the Y direction. It does not have to be. When the first wiring 12 includes a wiring extending portion extending in the Y direction, the wiring extending portion can be used as a mark, so that the positioning accuracy in the Y direction in which the light emitting element is placed on the substrate is improved. When the first wiring 12 does not have a wiring extension portion extending in the Y direction, the contact area between the base material and the reflective member can be increased in the Y direction, so that the joint strength between the base material and the reflective member is improved. To do. Further, when the first wiring does not have a wiring extending portion extending in the Y direction, the conductive adhesive member can be prevented from getting wet and spreading on the wiring extending portion extending in the Y direction. As a result, the area where the conductive adhesive member gets wet and spreads can be reduced, so that the shape of the conductive adhesive member can be easily controlled.

When the wiring extending portion extending in the Y direction is not provided, the length L2 of the first wiring in the Y direction is preferably 0.3 times or more and 0.9 times or less the length L1 of the base material in the Y direction. When the length L2 of the first wiring in the Y direction is 0.3 times or more the length L1 of the base material in the Y direction, the area of the first wiring increases, so that the light emitting element can be easily mounted. When the length L2 of the first wiring in the Y direction is 0.9 times or less the length L1 of the base material in the Y direction, the contact area between the base material and the reflective member can be increased. Further, since the length L2 of the first wiring in the Y direction is 0.9 times or less the length L1 of the base material in the Y direction, the area where the conductive adhesive member wets and spreads on the first wiring is reduced. be able to. When the wiring extending portion extending in the Y direction is provided, the length of the first wiring 12 in the Y direction of the portion excluding the wiring extending portion extending in the Y direction is the length of the base material in the Y direction. It is preferably 0.3 times or more and 0.9 times or less.

The light emitting device 1000 may include a translucent member 30 that covers the light emitting element 20. By coating the light emitting element with the translucent member, the light emitting element 20 can be protected from external stress. The translucent member 30 may cover the light emitting element 20 via the light guide member 50. The light guide member 50 may be located only between the light extraction surface 201 of the light emitting element and the light transmitting member 30, and the light emitting element 20 and the light transmitting member 30 may be fixed, or the light extraction surface 201 of the light emitting element may be fixed. The light emitting element 20 and the translucent member 30 may be fixed by covering from the light emitting element to the side surface 202 of the light emitting element. The light guide member 50 has a higher transmittance of light from the light emitting element 20 than the first reflecting member 40. Therefore, when the light guide member 50 covers the side surface 202 of the light emitting element, the light emitted from the side surface of the light emitting element 20 can be easily taken out to the outside of the light emitting device through the light guide member 50, so that the light extraction efficiency can be improved. Can be done.

When the light emitting device includes the translucent member 30, the side surface of the translucent member is preferably covered with the first reflective member 40. By doing so, it is possible to obtain a light emitting device having a high contrast between the light emitting region and the non-light emitting region and having a good “parting property”.

The translucent member 30 may contain wavelength conversion particles 32. The wavelength conversion particle 32 is a member that absorbs at least a part of the primary light emitted by the light emitting element 20 and emits secondary light having a wavelength different from that of the primary light. By including the wavelength conversion particles 32 in the translucent member 30, it is possible to output a mixed color light in which the primary light emitted by the light emitting element 20 and the secondary light emitted by the wavelength conversion particles 32 are mixed. For example, if a blue LED is used for the light emitting element 20 and a phosphor such as YAG is used for the wavelength conversion particle 32, the blue light of the blue LED and the yellow light emitted by the phosphor excited by the blue light are mixed and obtained. A light emitting device that outputs the white light to be produced can be configured.

The wavelength conversion particles may be uniformly dispersed in the translucent member, or the wavelength conversion particles may be unevenly distributed in the vicinity of the light emitting element rather than the upper surface of the translucent member 30. By unevenly distributing the wavelength conversion particles in the vicinity of the light emitting element rather than the upper surface of the translucent member 30, the base material 31 of the translucent member 30 also functions as a protective layer even if the wavelength conversion particles 32 that are sensitive to moisture are used. Therefore, deterioration of the wavelength conversion particles 32 can be suppressed. Further, as shown in FIG. 2A, the translucent member 30 may include a layer containing the wavelength conversion particles 32 and a layer 33 substantially not containing the wavelength conversion particles. In the Z direction, the layer 33 that does not substantially contain the wavelength conversion particles is located above the layer that contains the wavelength conversion particles 32. By doing so, the layer 33 that does not substantially contain the wavelength conversion particles also functions as a protective layer, so that deterioration of the wavelength conversion particles 32 can be suppressed. Examples of the wavelength conversion particles 32 that are sensitive to moisture include manganese-activated fluoride phosphors. The manganese-activated fluoride-based phosphor is a preferable member from the viewpoint of color reproducibility because it can emit light with a relatively narrow spectral line width. "Substantially free of wavelength conversion particles" means that wavelength conversion particles inevitably mixed are not excluded, and the content of wavelength conversion particles is preferably 0.05% by weight or less.

The first reflective member 40 covers the side surface of the light emitting element and the front surface of the substrate. By covering the side surface of the light emitting element with the first reflecting member 40, the light traveling in the X direction and / or the Y direction from the light emitting element 20 can be reflected by the first reflecting member to increase the light traveling in the Z direction.

As shown in FIG. 5, it is preferable that the lateral side surface 405 of the first reflective member 40 and the lateral side surface 105 of the substrate 10 are substantially coplanar. By doing so, the width in the first direction (X direction) can be shortened, so that the light emitting device can be miniaturized.

As shown in FIG. 8, it is preferable that the side surface 403 in the longitudinal direction of the first reflecting member 40 located on the bottom surface 113 side is inclined inward of the light emitting device 1000 in the Z direction. By doing so, when the light emitting device 1000 is mounted on the mounting board, the contact between the side surface 403 of the first reflecting member 40 and the mounting board is suppressed, and the mounting posture of the light emitting device 1000 is likely to be stable. It is preferable that the side surface 404 of the first reflecting member 40 located on the upper surface 114 side in the longitudinal direction is inclined inward of the light emitting device 1000 in the Z direction. By doing so, the contact between the side surface of the first reflecting member 40 and the suction nozzle (collet) can be suppressed, and damage to the first reflecting member 40 at the time of suction of the light emitting device 1000 can be suppressed. As described above, the longitudinal side surface 403 of the first reflective member 40 located on the bottom surface 113 side and the longitudinal side surface 404 of the first reflective member 40 located on the upper surface 114 side are in the front direction (Z direction) from the back surface. It is preferable that the light emitting device 1000 is inclined inward. The inclination angle θ of the first reflective member 40 can be appropriately selected, but from the viewpoint of ease of exerting such an effect and the strength of the first reflective member 40, it is preferably 0.3 ° or more and 3 ° or less. It is more preferably 0.5 ° or more and 2 ° or less, and even more preferably 0.7 ° or more and 1.5 ° or less. Further, it is preferable that the right side surface and the left side surface of the light emitting device 1000 have substantially the same shape. By doing so, the light emitting device 1000 can be miniaturized.

<Embodiment 2>
The light emitting device 2000 according to the second embodiment of the present invention shown in FIGS. 9A to 12 has a number of light emitting elements mounted on the substrate and a recess provided in the base material as compared with the light emitting device 1000 according to the first embodiment. The difference is that the number of vias and the insulating film are provided.

As shown in FIG. 10, since the via 15 is in contact with the first wiring 12, the second wiring 13, and the third wiring 14, the heat dissipation of the light emitting device 2000 can be improved. The third wiring 14 located in one recess may be in contact with one via 15, and the third wiring 14 located in one recess may be in contact with a plurality of vias 15. When the third wiring 14 comes into contact with the plurality of vias 15, the heat dissipation of the light emitting device is further improved. As shown in FIG. 11, when there are two vias in contact with the third wiring 14 located in one recess, one via is relative to the center line 11C of the recess parallel to the second direction (Y direction). And the other via may be located symmetrically.

As shown in FIG. 10, the light emitting device 2000 may include a first light emitting element 20A and a second light emitting element 20B. The emission peak wavelength of the first light emitting element 20A and the emission peak wavelength of the second light emitting element 20B may be the same or different. When the emission peak wavelength of the first light emitting element 20A and the emission peak wavelength of the second light emitting element 20B are different, the emission peak wavelength of the first light emitting element 20A is in the range of 430 nm or more and less than 490 nm (wavelength range in the blue region). It is preferable that the emission peak wavelength of the second light emitting element 20B is in the range of 490 nm or more and 570 nm or less (wavelength range in the green region). By doing so, the color rendering property of the light emitting device can be improved.

When the light emitting device includes a plurality of light emitting elements (first light emitting element 20A and second light emitting element 20B), it is preferable that the plurality of light emitting elements are provided side by side in the first direction (X direction). By doing so, the width of the light emitting device 2000 in the second direction (Y direction) can be shortened, so that the light emitting device can be made thinner.

As shown in FIG. 10, the first light emitting element 20A and the second light emitting element 20B may be coated on one translucent member 30, and the first light emitting device 2000A is shown in FIGS. 12A and 12B. The light emitting element 20A and the second light emitting element 20B may be coated with separate translucent members. By coating the first light emitting element 20A and the second light emitting element 20B on one translucent member 30, the size of the translucent member 30 can be increased, so that the light extraction efficiency of the light emitting device is improved. Since the first light emitting element 20A and the second light emitting element 20B are each coated with separate translucent members, the first reflective member is located between one translucent member and the other translucent member. Can be formed. By doing so, it is possible to obtain a light emitting device having good "parting ability".

Like the light emitting device 2000B shown in FIG. 12C, the translucent member 30 has a first wavelength conversion layer 31E facing the light extraction surface of the light emitting element and a second wavelength conversion arranged on the first wavelength conversion layer 31E. The layer 31F and the like may be provided. The first wavelength conversion layer 31E includes a base material 312E and a first wavelength conversion particle 311E. The second wavelength conversion layer 31F includes a base material 312F and a second wavelength conversion particle 311F. The peak wavelength of the light from the first wavelength conversion particles 311E excited by the light emitting element is preferably shorter than the peak wavelength of the light from the second wavelength conversion particles 311F excited by the light emitting element. Light emitting element ・ BR> No The peak wavelength of the light from the excited first wavelength conversion particle 311E is shorter than the peak wavelength of the light from the second wavelength conversion particle 311F excited by the light emitting element. The second wavelength conversion particle 311F can be excited by the light from the excited first wavelength conversion particle 311E. This makes it possible to increase the light from the excited second wavelength conversion particles 311F. Since the second wavelength conversion layer 31F is arranged on the first wavelength conversion layer 31E, the light from the first wavelength conversion particle 311E excited by the light emitting element is easily emitted to the second wavelength conversion particle 311F.

The peak wavelength of the light from the first wavelength conversion particle 311E excited by the light emitting element is 500 nm or more and 570 nm or less, and the peak wavelength of the light from the second wavelength conversion particle 311F excited by the light emitting element is 610 nm or more and 750 nm or less. It is preferable to have. By doing so, it is possible to obtain a light emitting device having high color rendering properties. For example, β-sialon-based phosphors can be mentioned as the first wavelength conversion particles, and manganese-activated potassium fluoride silicate phosphors can be mentioned as the second wavelength conversion particles. When a manganese-activated potassium fluoride silicate phosphor is used as the second wavelength conversion particles, it is particularly preferable that the translucent member 30 includes the first wavelength conversion layer 31E and the second wavelength conversion layer 31F. .. The second wavelength conversion particles, which are manganese-activated fluoride phosphors, are likely to cause brightness saturation, but the light from the light emitting element is due to the position of the first wavelength conversion layer 31E between the second wavelength conversion layer 31F and the light emitting element. Can be suppressed from being excessively irradiated to the second wavelength conversion particles. As a result, deterioration of the second wavelength conversion particles, which are manganese-activated fluoride phosphors, can be suppressed. When the first wavelength conversion particles and the second wavelength conversion particles are contained in the same wavelength conversion layer, the second wavelength conversion particles are dispersed and located throughout the wavelength conversion layer. It is preferable that the first wavelength conversion particles are unevenly distributed on the light extraction surface side of the light emitting element. For example, on the light extraction surface side of the light emitting element of the wavelength conversion layer, the first wavelength conversion particles and the second wavelength conversion particles are mixed, and the surface side opposite to the light extraction surface side of the light emitting element of the wavelength conversion layer. In, only the second wavelength conversion particle may be located. When the second wavelength conversion particles are dispersed and located throughout the wavelength conversion layer and the first wavelength conversion particles are unevenly distributed on the light extraction surface side of the light emitting element, most of the first wavelength conversion is performed. Since the particles are located closer to the light extraction surface side of the light emitting element than the second wavelength conversion particles, the light from the first wavelength conversion particles 311E excited by the light emitting element can easily excite the second wavelength conversion particles 311F. This makes it possible to increase the light from the excited second wavelength conversion particles 311F. Further, when a phosphor of manganese-activated potassium fluoride silicate is used as the second wavelength conversion particles, it is possible to prevent the light from the light emitting element from being excessively irradiated to the second wavelength conversion particles by the first wavelength conversion particles. be able to. As a result, deterioration of the second wavelength conversion particles, which are manganese-activated fluoride phosphors, can be suppressed.

The translucent member may contain only one type of wavelength conversion particles that emit green light, or may contain a plurality of types. Further, only one type of wavelength conversion particles that emit red light may be contained, or a plurality of types may be contained. For example, a CASN phosphor as the wavelength conversion particle peak wavelength of light from the excitation wavelength converting particles into the light emitting element is 750nm or less than 610 nm, the phosphor of the manganese-activated fluoride potassium silicate (e.g. _K 2 _SiF 6: Mn) and may be contained in the translucent member 30. In general, the CASN-based phosphor has a shorter afterglow time than the manganese-activated potassium fluoride silicate phosphor, which is the time from when the irradiation of the excitation light is stopped until the emission of the wavelength conversion particles is stopped. Therefore, when the translucent member contains a CASN-based phosphor and a manganese-activated potassium fluoride silicate phosphor, the translucent member contains only a manganese-activated potassium fluoride silicate phosphor. The afterglow time can be shortened. Further, in general, manganese-activated potassium fluoride silicate has an emission peak having a narrower half-value width than that of a CASN-based phosphor, so that the color purity is high and the color reproducibility is good. Therefore, by containing the CASN-based phosphor and the manganese-activated potassium fluoride silicate phosphor in the translucent member, the color reproducibility is higher than that in the case where the translucent member contains only the CASN-based phosphor. Becomes good.

For example, the weight of the manganese-activated potassium fluoride silicate phosphor contained in the translucent member is preferably 0.5 times or more and 6 times or less, and 1 time or more and 5 times or less the weight of the phosphor of the CASN-based phosphor. More preferably, it is more preferably 2 times or more and 4 times or less. By increasing the weight of the manganese-activated potassium fluoride silicate phosphor, the color reproducibility of the light emitting device is improved. The afterglow time can be shortened by increasing the weight of the phosphor of the CASN-based phosphor.

The average particle size of the manganese-activated potassium fluoride silicate phosphor is preferably 5 μm or more and 30 μm or less. The average particle size of the CASN-based phosphor is preferably 5 μm or more and 30 μm or less. When the density of the wavelength conversion particles contained in the translucent member is the same, the light from the light emitting element is easily diffused to the wavelength conversion particles due to the small particle size of the wavelength conversion particles. It is possible to suppress unevenness. Further, when the density of the wavelength conversion particles contained in the translucent member is the same, the large particle size of the wavelength conversion particles makes it easier to extract light from the light emitting element, so that the light extraction efficiency of the light emitting device is improved.

The CASN-based phosphor and the manganese-activated potassium fluoride silicate phosphor may be contained in the same wavelength conversion layer of the translucent member, and when the translucent member includes a plurality of wavelength conversion layers, the translucent member may be contained. , May be contained in different wavelength conversion layers. When the manganese-activated potassium fluoride silicate phosphor and the CASN-based phosphor are contained in different wavelength conversion layers, the light peaks at the manganese-activated potassium fluoride silicate phosphor and the CASN-based phosphor. It is preferable that the wavelength conversion particles having a short wavelength are located close to the light emitting element. By doing so, it is possible to excite the wavelength conversion particles having a long peak wavelength of light by the light from the wavelength conversion particles having a short peak wavelength of light. For example, when the peak wavelength of the light of the manganese-activated potassium fluoride silicate is around 631 nm and the peak wavelength of the light of the CASN-based phosphor is around 650 nm, the phosphor of the manganese-activated potassium fluoride silicate is the light emitting element. It is preferable that it is close to.

The translucent member may contain a SCASSN-based phosphor and a manganese-activated potassium fluoride silicate phosphor. The afterglow time can also be shortened by including the SCASSN-based phosphor in the translucent member. Further, the translucent member may contain a CASN-based phosphor, a manganese-activated potassium fluoride silicate phosphor, and a β-sialon-based phosphor. By doing so, the color reproducibility of the light emitting device is improved.

Like the light emitting device 2000B shown in FIG. 12C, the via 15A connected to the first wiring, the second wiring and the third wiring, and the via 15B connected to the first wiring and the second wiring and separated from the third wiring are provided. You may be. As shown in FIG. 12D, in the rear view, the via 15A overlaps the second wiring 13 and the third wiring 14, and the via 15B overlaps the second wiring 13 and does not overlap the third wiring.

As shown in FIG. 12C, the light guide member 50 may not cover the side surface of the translucent member 30, or may cover the side surface of the translucent member 30. On the first wavelength conversion layer 31E, the second wavelength conversion layer 31F arranged on the first wavelength conversion layer 31E, and the second wavelength conversion layer 31 in which the translucent member 30 faces the light extraction surface of the light emitting element. When the layer 33 which does not substantially contain the wavelength conversion particles arranged in the above is provided, the side surface of the first wavelength conversion layer 31E is covered with the light guide member 50 as in the light emitting device 2000C shown in FIG. 12E. , The side surface of the second wavelength conversion layer 31F and the side surface of the layer 33 which does not substantially contain the wavelength conversion particles may be exposed from the light guide member 50. Further, as in the light emitting device 2000D shown in FIG. 12F, the side surface of the first wavelength conversion layer 31E and the side surface of the second wavelength conversion layer 31F are covered with the light guide member 50, and the layer 33 substantially does not contain the wavelength conversion particles. The side surface of the light guide member 50 may be exposed from the light guide member 50. Like the light emitting device 2000E shown in FIG. 12G, the side surface of the first wavelength conversion layer 31E, the side surface of the second wavelength conversion layer 31F, and the side surface of the layer 33 substantially containing no wavelength conversion particles are covered with the light guide member 50. May be. As shown in FIG. 12G, when the light guide member 50 covers the side surface of the first wavelength conversion layer 31E, the side surface of the second wavelength conversion layer 31F, and the side surface of the layer 33 that does not substantially contain wavelength conversion particles, The light guide member 50 may be exposed from the first reflection member 40. By covering at least a part of the side surface of the translucent member with the light guide member, the light extraction efficiency of the light emitting device can be improved. When the side surface of the translucent member 30 has irregularities as in the light emitting device 2000F shown in FIG. 12H, the light emitting device is formed by covering the irregularities on the side surface of the translucent member 30 with the light guide member 50. It is possible to improve the light extraction efficiency of.

Like the light emitting device 2000G shown in FIG. 12I, the layer 33 that does not substantially contain the wavelength conversion particles includes the layer 33A that contains the reflective particles and the layer 33B that does not substantially contain the reflective particles. Is preferable. By locating the layer 33A containing the reflective particles on the first wavelength conversion layer and / or the second wavelength conversion layer, the light from the light emitting element is diffused in the translucent member by the layer 33A containing the reflective particles. To. This makes it possible to increase the light from the first wavelength conversion particles and / or the second wavelength conversion particles excited by the light of the light emitting element. Further, by arranging the layer 33B that does not substantially contain the reflective particles on the layer 33A that contains the reflective particles, the layer 33B that does not substantially contain the reflective particles serves as a protective layer for the layer 33A that contains the reflective particles. Can fulfill the function of. Further, when grinding the upper surface of the translucent member 30 for the purpose of reducing the thickness of the light emitting device, a layer 33B containing substantially no reflective particles is arranged on the layer 33A containing the reflective particles. As a result, only the layer 33B, which contains substantially no reflective particles, can be ground. As a result, the layer 33A containing the reflective particles is not ground, so that the variation in the amount of the reflective particles contained in the translucent member can be suppressed. When the layer 33 that does not substantially contain the wavelength conversion particles is only one layer containing the reflective particles, it is preferable that the reflective particles are unevenly distributed on the light extraction surface side of the light emitting element. By doing so, the base material of the layer 33 which does not substantially contain the wavelength conversion particles can function as a protective layer. Examples of the reflective particles include titanium oxide, zirconium oxide, aluminum oxide, silicon oxide and the like. Titanium oxide having a high refractive index is particularly preferable as the reflective particles. The content of the reflective particles in the layer that does not substantially contain the wavelength conversion particles can be appropriately selected, but is preferably 0.05 wt% or more and 0.1 wt% or less, for example, from the viewpoint of light reflectivity and viscosity in the liquid state.

When the translucent member contains wavelength conversion particles as in the light emitting device 2000H shown in FIG. 12J, a coating 34 covering the upper surface of the translucent member 30 may be provided. The coating film 34 is an agglomerate of coating particles, which are nanoparticles. The coating film may be only coating particles, or may contain coating particles and a resin material. Since the refractive index of the coating film is different from the refractive index of the base material of the translucent member located on the outermost surface, it is possible to correct the emission chromaticity of the light emitting device. The base material of the translucent member located on the outermost surface means a base material of a layer that forms a surface of the translucent member opposite to the surface of the light emitting element on the light extraction surface side. For example, when the refractive index of the coating film 34 is larger than the refractive index of the base material of the translucent member located on the outermost surface, the reflected light component at the interface between the coating film and the air is the translucent member located on the outermost surface. It increases more than the reflected light component at the interface between the base material and air. Therefore, the reflected light component returning to the translucent member can be increased, so that the wavelength conversion particles can be easily excited. Thereby, the emission chromaticity of the light emitting device can be corrected to the long wavelength side. When the refractive index of the coating film 34 is smaller than the refractive index of the base material of the translucent member located on the outermost surface, the reflected light component at the interface between the coating film and the air is the interface between the base material of the translucent member and the air. It is less than the reflected light component in. As a result, the reflected light component returning to the translucent member can be reduced, so that it becomes difficult to excite the wavelength conversion particles. Thereby, the emission chromaticity of the light emitting device can be corrected to the short wavelength side. For example, when a phenyl-based silicone resin is used as the base material of the translucent member located on the outermost surface, titanium oxide, titanium oxide, aluminum oxide, etc. are used as coating particles for correcting the emission chromaticity of the light emitting device to the long wavelength side. Can be mentioned. When a phenyl-based silicone resin is used as the base material of the translucent member located on the outermost surface, silicon oxide or the like can be mentioned as a coating particle for correcting the emission chromaticity of the light emitting device to the short wavelength side. When the light emitting device includes a plurality of translucent members, the upper surface of one translucent member may be coated with a coating film, and the upper surface of the other translucent member may not be coated with a coating film. Whether or not to form a film covering the upper surface of the translucent member can be appropriately selected according to the correction of the emission chromaticity of the light emitting device. When the light emitting device includes a plurality of translucent members, the upper surface of one of the translucent members is covered with a coating having a refractive index larger than that of the base material of the translucent member located on the outermost surface. The upper surface of the other translucent member may be coated with a coating having a refractive index smaller than that of the base material of the translucent member located on the outermost surface. The material of the coating film that covers the translucent member can be appropriately selected according to the correction of the emission chromaticity of the light emitting device. The coating can be formed by a known method such as potting with a dispenser, spraying with an inkjet or a spray.

Like the substrate 10 shown in FIG. 12K, the first wiring 12 preferably includes a narrow portion having a short length in the Y direction and a wide portion having a long length in the Y direction when viewed from the front. The length D4 of the narrow portion in the Y direction is shorter than the length D5 of the wide portion in the Y direction. The narrow portion is located at a portion that is separated from the center of the via 15 in the X direction in the front view and in which the electrode of the light emitting element is located in the X direction. The wide portion is located at the center of the via 15 in front view. By providing the first wiring 12 with a narrow portion, it is possible to reduce the area where the conductive adhesive member that electrically connects the electrode of the light emitting element and the first wiring spreads wet on the first wiring. This makes it easier to control the shape of the conductive adhesive member. The peripheral edge of the first wiring may have a rounded corner.

As shown in FIG. 10, the light guide member 50 includes a light extraction surface 201A of the first light emitting element 20A, a side surface 202A of the first light emitting element 20A, a light extraction surface 201B of the second light emitting element 20B, and a second light emitting device. The side surface 202B of the element 20B may be continuously covered. By doing so, the light of the first light emitting element 20A and / or the second light emitting element 20B can be taken out even between the light extraction surface 201A of the first light emitting element 20A and the light extraction surface 201B of the second light emitting element 20B. Therefore, uneven brightness of the light emitting device can be suppressed. When the emission peak wavelength of the first light emitting element 20A and the emission peak wavelength of the second light emitting element 20B are different, the light from the first light emitting element 20A and the second light emitting element 20B in the light guide member 50 Since the light of the above can be mixed, the color unevenness of the light emitting device can be suppressed.

The light emitting device may include an insulating film 18 that covers a part of the second wiring 13. By providing the insulating film 18, it is possible to secure the insulating property on the back surface and prevent a short circuit. In addition, it is possible to prevent the second wiring from being peeled off from the base material.

<Embodiment 3>
The light emitting device 3000 according to the third embodiment of the present invention shown in FIGS. 13A to 18B has a number of light emitting elements mounted on the substrate and a recess provided in the base material as compared with the light emitting device 2000 according to the second embodiment. The difference is that the number of vias, the shape of the base material, the shape of the recess, the structure of the translucent member, and the second reflective member and the third reflective member are provided.

As shown in FIG. 14A, since the via 15 is in contact with the first wiring 12, the second wiring 13, and the third wiring 14, the heat dissipation of the light emitting device 3000 can be improved. The number of dents and vias provided in the base material can be appropriately changed depending on the size of the base material and the like.

As shown in FIG. 14A, the base material 11 may have a recess 111A on the front surface 111. By providing the base material 11 with the recess 111A, the contact area between the first reflective member and the base material 11 can be increased. Thereby, the bonding strength between the first reflective member and the base material can be improved. The recesses 111A are preferably located at both ends of the front surface 111 in the longitudinal direction (X direction). By doing so, it is possible to improve the bonding strength with the first reflective member at both ends of the base material, so that it is possible to prevent the first reflective member and the base material from peeling off.

As shown in FIGS. 15 and 16, the substrate 10 has a central recess 16A that opens at the back surface and the bottom surface of the base material and is separated from the side surface 105 of the base material, and opens at the back surface, the bottom surface, and the side surface 105 of the base material. It may be provided with an end recess 16B and the like. The side surface 105 of the substrate is located between the front and back of the substrate. By providing the substrate 10 with the end recess 16B, it is possible to improve the bonding strength with the mounting substrate at the end of the light emitting device. When a plurality of end recesses 16B are provided, it is preferable that the edge recesses are located at both ends of the base material in the rear view. By doing so, the bonding strength of the mounting substrate of the light emitting device is improved. The substrate 10 may include only the central recess 16A or the edge recess 16B. In addition, in this specification, a dent means a central dent and / or an end dent. As shown in FIG. 15, there are a plurality of vias 15, and in rear view, a via overlapping the central recess 16A and a via overlapping the end recess 16B may be provided.

As shown in FIG. 14A, the light emitting device 3000 may include a first light emitting element 20A, a second light emitting element 20B, and a third light emitting element 20C. The light emitting device may include four or more light emitting elements. In the present specification, the light emitting element refers to the first light emitting element 20A, the second light emitting element 20B and / or the third light emitting element 20C. As shown in FIG. 17A, it is preferable that the first light emitting element 20A, the second light emitting element 20B, and the third light emitting element 20C are located side by side in the longitudinal direction (X direction) in the front view. By doing so, the light emitting device can be made thinner in the Y direction. When the light extraction surfaces of the first light emitting element and the second light emitting element are rectangular, the short side 2011A of the light extraction surface of the first light emitting element and the short side 2011B of the light extraction surface of the second light emitting element face each other. Is preferable. When the light extraction surfaces of the second light emitting element and the third light emitting element are rectangular, the short side 2012B of the light extraction surface of the second light emitting element and the short side 2011C of the light extraction surface of the third light emitting element face each other. Is preferable. By doing so, the light emitting device can be made thinner in the Y direction. As used herein, the term "rectangle" means a quadrangle having two long sides and two short sides, and having four internal angles at right angles. Further, in the present specification, the right angle means 90 ± 3 °.

The emission peak wavelength of the first light emitting element 20A, the emission peak wavelength of the second light emitting element 20B, and the emission peak wavelength of the third light emitting element 20C may be the same or different. Since the emission peak wavelength of the first light emitting element 20A, the emission peak wavelength of the second light emitting element 20B, and the emission peak wavelength of the third light emitting element 20C are different, it is possible to obtain a light emitting device having high color rendering properties. When the first light emitting element 20A, the second light emitting element 20B, and the third light emitting element 20C are arranged in order, the emission peak wavelength of the first light emitting element 20A and the emission peak wavelength of the third light emitting element 20C are the same. Yes, the emission peak wavelength of the second light emitting element 20B may be different from the emission peak wavelength of the first light emitting element 20A. By doing so, for example, when the output of the first light emitting element 20A is insufficient, it can be supplemented by the third light emitting element 20C. Further, the second light emitting element 20B having a light emitting peak wavelength different from the light emitting peak wavelength of the first light emitting element 20A and the light emitting peak wavelength of the third light emitting element 20C is located between the first light emitting element 20A and the third light emitting element 20C. By doing so, it is possible to improve the color rendering property of the light emitting device and reduce the color unevenness. In the present specification, the same as the emission peak wavelength means that a fluctuation of about ± 10 nm is allowed. When the emission peak wavelength of the first light emitting element 20A is in the range of 430 nm or more and less than 490 nm (wavelength range in the blue region), the emission peak wavelength of the third light emitting element 20C may be in the range of 430 nm or more and less than 490 nm. preferable. By doing so, the excitation efficiency of the wavelength conversion particles can be improved by selecting the wavelength conversion particles having the peak of the excitation efficiency in the range of 430 nm or more and less than 490 nm.

As shown in FIG. 14A, the light extraction surface 201A of the first light emitting element 20A and the light extraction surface 201B of the second light emitting element 20B may be located at substantially the same height in the Z direction, and may be located at substantially the same height in the Z direction. The light extraction surface 201A of the first light emitting element 20A and the light extraction surface 201B of the second light emitting element 20B may be located at different heights. For example, as in the light emitting device 3000A shown in FIG. 14B, the light extraction surface 201A of the first light emitting element 20A may be located below the light extraction surface 201B of the second light emitting element 20B in the Z direction. By locating the light extraction surface 201A of the first light emitting element 20A below the light extraction surface 201B of the second light emitting element 20B in the Z direction, the light from the second light emitting element 20B spreads in the longitudinal direction (X direction). It will be easier. Further, as in the light emitting device 3000B shown in FIG. 14C, the light extraction surface 201A of the first light emitting element 20A may be located above the light extraction surface 201B of the second light emitting element 20B in the Z direction. Since the light extraction surface 201A of the first light emitting element 20A is located above the light extraction surface 201B of the second light emitting element 20B in the Z direction, the light from the first light emitting element 20A can easily spread in the longitudinal direction (X direction). Become.

As shown in FIG. 17A, the short side 2011A of the light extraction surface 201A of the first light emitting element 20A and the short side 2011B of the light extraction surface 201B of the second light emitting element 20B may have substantially the same length, and the first The lengths of the short side 2011A of the light extraction surface 201A of the light emitting element 20A and the short side 2011B of the light extraction surface 201B of the second light emitting element 20B may be different. For example, as shown in FIG. 17B, the length of the short side 2011A of the light extraction surface 201A of the first light emitting element 20A may be longer than the length of the short side 2011B of the light extraction surface 201B of the second light emitting element 20B. .. By doing so, the light from the first light emitting element 20A is likely to spread in the longitudinal direction (X direction). Further, as shown in FIG. 17C, the length of the short side 2011A of the light extraction surface 201A of the first light emitting element 20A may be shorter than the length of the short side 2011B of the light extraction surface 201B of the second light emitting element 20B. .. By doing so, the light from the second light emitting element 20B is likely to spread in the longitudinal direction (X direction).

As shown in FIG. 14A, the light transmitting member 30 includes a first light transmitting layer 31A facing the light extraction surface of the light emitting element, and a wavelength conversion layer 31B arranged on the first light transmitting layer 31A. You may. The first light-transmitting layer 31A contains a base material 312A and a first diffusion particle 311A. The wavelength conversion layer 31B includes the base material 312B and the wavelength conversion particles 32. When the translucent member 30 includes the first translucent layer 31A facing the light extraction surface of the light emitting element, the light from the first light emitting element and the second light emitting element is diffused by the first translucent layer 31A. .. As a result, the light of the first light emitting element, the second light emitting element and / or the third light emitting element can be mixed in the first light transmitting layer 31A, so that the brightness unevenness of the light emitting device can be reduced. When the first light emitting element, the second light emitting element and / or the third light emitting element have different emission peak wavelengths, the light of the first light emitting element, the second light emitting element and / or the third light emitting element is transmitted through the first light. Since it can be mixed in the layer 31A, the color unevenness of the light emitting device can be reduced.

It is preferable that the first light transmitting layer 31A does not substantially contain wavelength conversion particles. When the wavelength conversion particles are excited by the light of the light emitting element, they absorb a part of the light from the light emitting element. Since the first translucent layer 31A is located between the light extraction surface of the light emitting element and the wavelength conversion layer, the light of the light emitting element is absorbed by the wavelength conversion particles before the light of the light emitting element is absorbed by the wavelength conversion particles. The light of the third light emitting element can be mixed with the light of the first light emitting element and the second light emitting element in the first light transmitting layer 31A. As a result, it is possible to suppress a decrease in the light extraction efficiency of the light emitting device.

As shown in FIG. 14A, the second light transmitting layer 31C may be located on the wavelength conversion layer 31B. The second translucent layer 31C is a layer that does not substantially contain wavelength conversion particles. The second light-transmitting layer 31C may include a base material 312C and a second diffusion particle 311C. Since the second translucent layer 31C contains the second diffuse particles 311C, the light from the light emitting element and the light from the wavelength conversion particles excited by the light emitting element can be mixed in the second transmissive layer. it can. Thereby, the color unevenness of the light emitting device can be reduced. For example, the material in which the second diffusing particles have a lower refractive index than the first diffusing particles may be used. By doing so, the light diffused by the second diffusing particles is reduced, so that the light extraction efficiency of the light emitting device is improved. As a material in which the second diffusing particles have a lower refractive index than the first diffusing particles, titanium oxide can be selected as the first diffusing particles and silicon oxide can be selected as the second diffusing particles.

As shown in FIG. 14A, the second reflective member 41 that covers the electrode forming surface 203A of the first light emitting element 20A, the electrode forming surface 203B of the second light emitting element 20B, and / or the electrode forming surface 203C of the third light emitting element 20C. You may have. When the light emitting device includes the second reflecting member 41, it is possible to suppress the light from the light emitting element from being absorbed by the substrate 10. Further, as shown in FIGS. 2A, 10 and 12B, the electrode forming surface of the light emitting element may be covered with the first reflecting member. By doing so, it is possible to prevent the light from the light emitting element from being absorbed by the substrate. Further, it is preferable that the second reflecting member 41 is provided with an inclined portion whose thickness increases in the Z direction as the distance from the light emitting element increases. By providing the second reflecting member 41 with an inclined portion, the light extraction efficiency of the light emitting device is improved.

As shown in FIG. 14A, a third reflective member 42 may be provided between the light guide member 50 and the first reflective member. The third reflective member 42 covers the side surface of the light emitting element via the light guide member. By forming the light guide member 50 by potting or the like after forming the third reflective member 42, it is possible to suppress the shape variation of the light guide member 50. The surface of the third reflective member 42 facing the translucent member 30 is preferably flat. By doing so, it becomes easy to form the translucent member 30 after forming the third reflective member 42. When the light emitting device includes the third reflecting member 42, the first reflecting member covers the side surface of the first element and the side surface of the second element via the third reflecting member and the light guide member.

Like the light emitting device 3000C shown in FIG. 18A, a covering member that covers the light extraction surface of the light emitting element may be provided. When the covering member 31D contains diffused particles 311D, the covering member 31D covering the light extraction surface reduces the light from the light emitting element traveling in the Z direction and proceeds in the X direction and / or the Y direction. The light can be increased. As a result, the light from the light emitting element can be diffused in the light guide member, so that the brightness unevenness of the light emitting device can be suppressed. The covering member 31D is located between the light extraction surface of the light emitting element and the light guide member 50. The first covering member 31D containing the diffuse particles 311D preferably exposes at least a part of the side surface of the light emitting element, whereby the light from the light emitting element traveling in the X direction and / or the Y direction is reduced. Can be suppressed. The covering member 31D may cover the light extraction surface of each of the first light emitting element, the second light emitting element, and the third light emitting element, and may cover the light extraction surface of the first light emitting element, the second light emitting element, or the third light emitting element. Only one of the light extraction surfaces may be covered.

The covering member 31D may contain wavelength conversion particles. By covering the light extraction surface of the light emitting element and providing the covering member 31D containing the wavelength conversion particles, the color adjustment of the light emitting device becomes easy. The wavelength conversion particles contained in the covering member 31D may be the same as or different from the wavelength conversion particles contained in the wavelength conversion layer. For example, when the peak wavelength of light emission of the light emitting element is in the range of 490 nm or more and 570 nm or less (wavelength range in the green region), the wavelength conversion particles are a CASN-based phosphor excited by light in the range of 490 nm or more and 570 nm or less. / Or a SCASN-based phosphor is preferable. Other, as the wavelength conversion _{particles, (Sr, Ca) LiAl 3} N 4: may be used phosphor Eu.

As in the light emitting device 3000C shown in FIG. 18A, one covering member 31D may cover the light extraction surface of one light emitting element, and as in the light emitting device 3000D shown in FIG. 18B, a plurality of covering members 31D are one. The light extraction surface of the light emitting element may be covered. As shown in FIG. 18B, the light extraction efficiency of the light emitting element is improved by exposing a part of the light extraction surface from the covering member 31D.

<Embodiment 4>
The light emitting device 4000 according to the fourth embodiment of the present invention shown in FIG. 19 is different from the light emitting device 2000 according to the second embodiment in the configuration of the translucent member.

The translucent member 30 of the light emitting device 4000 includes a first translucent member 30A that covers the first light emitting element 20A and a second translucent member 30B that covers the second light emitting element 20B. The first translucent member 30A and the second translucent member 30B have different contents of the constituent members and / or the constituent members. For example, the type and / or the content of the wavelength conversion particles contained in the first translucent member 30A and the second translucent member 30B are different. By doing so, the color adjustment of the light emitting device becomes easy. As shown in FIG. 19, the first translucent member 30A may contain wavelength-converting particles, and the second translucent member 30B may substantially not contain wavelength-converting particles. By doing so, the light extraction efficiency from the second light emitting element 20B can be improved. For example, the emission peak wavelength of the first light emitting element 20A is in the range of 430 nm or more and less than 490 nm (wavelength range in the blue region), and the emission peak wavelength of the second light emitting element 20B is in the range of 490 nm or more and 570 nm or less (wavelength range in the green region). ), The first translucent member 30A contains wavelength-converting particles that emit green light and / or wavelength-converting particles that emit red light, and the second translucent member 30B substantially does not contain wavelength-converting particles. You may. The first translucent member 30A and the second translucent member 30B may be substantially free of wavelength conversion particles. Further, the emission peak wavelengths of the first light emitting element 20A and the second light emitting element may be the same or different.

Hereinafter, each component in the light emitting device according to the embodiment of the present invention will be described.

(Board 10)
The substrate 10 is a member on which a light emitting element is placed. The substrate 10 is composed of at least a base material 11, a first wiring 12, a second wiring 13, a third wiring 14, and a via 15.

(Base material 11)
The base material 11 can be constructed by using an insulating member such as a resin or a fiber reinforced resin, ceramics, or glass. Examples of the resin or fiber reinforced resin include epoxy, glass epoxy, bismaleimide triazine (BT), and polyimide. Examples of the ceramics include aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, or a mixture thereof. Among these base materials, it is particularly preferable to use a base material having physical properties close to the coefficient of linear expansion of the light emitting element. The lower limit of the thickness of the base material can be appropriately selected, but from the viewpoint of the strength of the base material, it is preferably 0.05 mm or more, and more preferably 0.2 mm or more. Further, the upper limit of the thickness of the base material is preferably 0.5 mm or less, more preferably 0.4 mm or less, from the viewpoint of the thickness (depth) of the light emitting device.

(1st wiring 12, 2nd wiring 13, 3rd wiring 14)
The first wiring is arranged in front of the substrate and is electrically connected to the light emitting element. The second wire is arranged on the back surface of the substrate and is electrically connected to the first wire via a via. The third wiring covers the inner wall of the recess and is electrically connected to the second wiring. The first wiring, the second wiring and the third wiring can be formed of copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, or an alloy thereof. These metals or alloys may be single-layered or multi-layered. In particular, copper or a copper alloy is preferable from the viewpoint of heat dissipation. Further, the surface layer of the first wiring and / or the second wiring is a layer of silver, platinum, aluminum, rhodium, gold or an alloy thereof from the viewpoint of wettability and / or light reflectivity of the conductive adhesive member. May be provided.

(Beer 15)
The via 15 is provided in a hole penetrating the front surface and the back surface of the base material 11, and is a member that electrically connects the first wiring and the second wiring. The via 15 may be composed of a fourth wiring 151 that covers the surface of the through hole of the base material, and a filling member 152 that is filled in the fourth wiring 151. For the fourth wiring 151, the same conductive members as those of the first wiring, the second wiring, and the third wiring can be used. As the filling member 152, a conductive member or an insulating member may be used.

(Insulating film 18)
The insulating film 18 is a member for ensuring insulation on the back surface and preventing a short circuit. The insulating film may be formed of any of those used in the art. For example, a thermosetting resin or a thermoplastic resin can be mentioned.

(Light emitting element 20)
The light emitting element 20 is a semiconductor element that emits light by itself when a voltage is applied, and a known semiconductor element composed of a nitride semiconductor or the like can be applied. Examples of the light emitting element 20 include an LED chip. The light emitting element 20 includes at least a semiconductor laminate 23, and in many cases further includes an element substrate 24. The top view shape of the light emitting element is preferably a rectangle, particularly a square shape or a rectangular shape long in one direction, but other shapes may be used, and for example, a hexagonal shape can increase the luminous efficiency. The side surface of the light emitting element may be perpendicular to the upper surface, or may be inclined inward or outward. Further, the light emitting element has positive and negative electrodes. The positive and negative electrodes can be composed of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel or alloys thereof. The emission peak wavelength of the light emitting element can be selected from the ultraviolet region to the infrared region depending on the semiconductor material and its mixed crystal ratio. As the semiconductor material, it is preferable to use a nitride semiconductor, which is a material capable of emitting short-wavelength light capable of efficiently exciting wavelength-converted particles. Nitride semiconductors are mainly represented by the general formula In _x Al _y Ga _1-x-y N (0 ≦ x, 0 ≦ y, x + y ≦ 1). The emission peak wavelength of the light emitting element is preferably 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less, and more preferably 450 nm or more and 475 nm or less from the viewpoint of luminous efficiency, excitation of wavelength-converted particles and a color mixing relationship with the emission thereof. More preferable. In addition, InAlGaAs-based semiconductors, InAlGaP-based semiconductors, zinc sulfide, zinc selenide, silicon carbide and the like can also be used. The element substrate of the light emitting element is mainly a crystal growth substrate capable of growing semiconductor crystals constituting the semiconductor laminate, but may be a bonding substrate for joining to a semiconductor element structure separated from the crystal growth substrate. .. Since the element substrate has translucency, it is easy to adopt flip-chip mounting, and it is easy to improve the light extraction efficiency. Examples of the base material of the device substrate include sapphire, gallium nitride, aluminum nitride, silicon, silicon carbide, gallium arsenide, gallium phosphorus, indium phosphorus, zinc sulfide, zinc oxide, zinc selenide, and diamond. Of these, sapphire is preferable. The thickness of the element substrate can be appropriately selected, for example, 0.02 mm or more and 1 mm or less, and preferably 0.05 mm or more and 0.3 mm or less from the viewpoint of the strength of the element substrate and / or the thickness of the light emitting device. ..

(Translucent member 30)
The translucent member is provided on the light emitting element and is a member that protects the light emitting element. The translucent member is composed of at least the following base materials. Further, the translucent member can function as a wavelength conversion particle by containing the following wavelength conversion particles 32 in the base material. The base material of each layer of the translucent member is configured as follows. The base material of each layer may be the same or different. It is not essential that the translucent member has wavelength-converted particles. Further, as the translucent member, a sintered body of wavelength conversion particles and an inorganic substance such as alumina, or a plate-like crystal of wavelength conversion particles can also be used.

(Base material 31 of translucent member)
The base material 31 of the translucent member may be any as long as it has translucency with respect to the light emitted from the light emitting element. The "translucency" means that the light transmittance at the emission peak wavelength of the light emitting element is preferably 60% or more, more preferably 70% or more, and even more preferably 80% or more. Say that. As the base material of the translucent member, a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or a modified resin thereof can be used. It may be glass. Among them, silicone resin and modified silicone resin are excellent in heat resistance and light resistance, and are preferable. Specific examples of the silicone resin include dimethyl silicone resin, phenyl-methyl silicone resin, and diphenyl silicone resin. The translucent member can be configured by using one of these base materials in a single layer or by laminating two or more of these base materials. In addition, ・ BR> {“Modified resin” in the specification shall include a hybrid resin. Further, the base material of the translucent member includes a first translucent layer, a wavelength conversion layer, and a base material of the second translucent layer.

The base material of the translucent member may contain various diffusing particles in the resin or glass. Examples of the diffused particles include silicon oxide, aluminum oxide, zirconium oxide, zinc oxide and the like. As the diffusion particles, one of these can be used alone, or two or more of these can be used in combination. In particular, silicon oxide having a small coefficient of thermal expansion is preferable. Further, by using nanoparticles as diffusion particles, it is possible to increase the scattering of light emitted by the light emitting element and reduce the amount of wavelength conversion particles used. In addition, means a particle having a particle size of 1 nm or more and 100 nm or less. Further, "particle size" herein, for example, it is defined by the D _50.

(Wavelength conversion particle 32)
The wavelength conversion particles absorb at least a part of the primary light emitted by the light emitting element and emit secondary light having a wavelength different from that of the primary light. As the wavelength conversion particles, one of the following specific examples can be used alone, or two or more of them can be used in combination.

The wavelength converting particles emitting green light, yttrium-aluminum-garnet fluorescent material (e.g., _{Y 3 (Al, Ga) 5} O 12: Ce), lutetium-aluminum-garnet fluorescent material (e.g., _Lu 3 (Al, Ga) ₅ O ₁₂ : Ce), terbium aluminum garnet-based phosphor (for example, Tb ₃ (Al, Ga) ₅ O ₁₂ : Ce) -based phosphor, silicate-based phosphor (for example, (Ba, Sr) ₂ SiO ₄ : Eu ), Chlorosilicate-based phosphors (for example, Ca ₈ Mg (SiO ₄ ) ₄ Cl ₂ : Eu), β-sialon-based phosphors (for example, Si _6-z Al _{z Oz} N _8-z : Eu (0 <z <4) .2)), SGS-based phosphor (for example, SrGa ₂ S ₄ : Eu), alkaline earth aluminate-based phosphor (for example, (Ba, Sr, Ca) Mg _x Al ₁₀ O _{16 + x} : Eu, Mn (however, 0) ≦ x ≦ 1)) and the like. As the wavelength conversion particles for yellow emission, α-sialon-based phosphors (for example, M _z (Si, Al) ₁₂ (O, N) ₁₆ (where 0 <z ≦ 2), M is Li, Mg, Ca, Y. , And lanthanide elements other than La and Ce). In addition, among the wavelength-converting particles that emit green light, there are wavelength-converting particles that emit yellow light. For example, yttrium-aluminum-garnet-based phosphors By substituting a part of Y with Gd, the emission peak wavelength can be shifted to the long wavelength side, and yellow emission is possible. In addition, among these, wavelength conversion particles capable of orange emission are also included. Examples of the wavelength-converting particles that emit red light include nitrogen-containing calcium aluminosilicate (CASN or SCASN) -based phosphors (for example, (Sr, Ca) AlSiN ₃ : Eu), and manganese-activated fluoride-based fluorescence. _{It is a phosphor represented by a} body (general formula (I) A ₂ [M _1-a Mn a F ₆ ] (however, in the above general formula (I), A is K, Li, Na, Rb, Cs. and at least one selected from the group consisting of NH _4, M is at least one element selected from the group consisting of group IV and group 14 elements, a is 0 <a <0.2 the fill)) can be mentioned as a representative example of the manganese-activated fluoride phosphors, phosphor manganese-activated fluoride potassium silicate (e.g. K ₂ SiF 6:. _Mn) is.

(Reflective member (first reflective member, second reflective member and / or third reflective member))
The reflective member refers to a first reflective member, a second reflective member, and / or a third reflective member. From the viewpoint of light extraction efficiency in the Z direction, the reflective member preferably has a light reflectance at the emission peak wavelength of the light emitting element of 70% or more, more preferably 80% or more, and 90% or more. It is even more preferable to have. Further, the reflective member is preferably white. Therefore, it is preferable that the reflective member contains a white pigment in the base material. The reflective member goes through a liquid state before curing. The reflective member can be formed by transfer molding, injection molding, compression molding, potting or the like. When the light emitting device includes a first reflecting member, a second reflecting member, and / or a third reflecting member, for example, a third reflecting member is formed by drawing, and the first reflecting member and the second reflecting member are potted. It may be formed.

(Base material of reflective member)
A resin can be used as the base material of the reflective member, and examples thereof include silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, and modified resins thereof. Among them, silicone resin and modified silicone resin are excellent in heat resistance and light resistance, and are preferable. Specific examples of the silicone resin include dimethyl silicone resin, phenyl-methyl silicone resin, and diphenyl silicone resin.

(White pigment)
White pigments include titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, zirconium oxide, One of the silicon oxides can be used alone, or two or more of them can be used in combination. The shape of the white pigment can be appropriately selected and may be amorphous or crushed, but spherical is preferable from the viewpoint of fluidity. The particle size of the white pigment is, for example, about 0.1 μm or more and 0.5 μm or less, but the smaller the particle size is preferable in order to enhance the effect of light reflection and coating. The content of the white pigment in the light-reflecting reflective member can be appropriately selected, but from the viewpoint of light reflectivity and viscosity in the liquid state, for example, it is preferably 10 wt% or more and 80 wt% or less, and 20 wt% or more and 70 wt% or less. More preferably, 30 wt% or more and 60 wt% or less are even more preferable. In addition, "wt%" is a weight percent, and represents the ratio of the weight of the material to the total weight of the light-reflecting reflective member.

(Coating member 31D)
The covering member covers the light extraction surface of the light emitting element, diffuses the light of the light emitting element, or changes the light to a light having a peak wavelength different from the light having the peak wavelength of the light emitting element.

(Base material of covering member)
As the base material of the covering member, the same material as the base material of the translucent member can be used.

(Diffuse particles of covering member)
As the diffusing particles of the covering member, the same material as the diffusing particles of the translucent member can be used.

(Light guide member 50)
The light guide member is a member that adheres a light emitting element and a translucent member and guides light from the light emitting element to the translucent member. Examples of the base material of the light guide member include silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, and modified resins thereof. Among them, silicone resin and modified silicone resin are excellent in heat resistance and light resistance, and are preferable. Specific examples of the silicone resin include dimethyl silicone resin, phenyl-methyl silicone resin, and diphenyl silicone resin. Further, the base material of the light guide member may contain the same filler and / or wavelength conversion particles as the above-mentioned translucent member. Further, the light guide member can be omitted.

(Conductive adhesive member 60)
The conductive adhesive member is a member that electrically connects the electrodes of the light emitting element and the first wiring. Conductive adhesive members include bumps such as gold, silver and copper, metal powders such as silver, gold, copper, platinum, aluminum and palladium and metal pastes containing resin binders, tin-bismuth, tin-copper and tin. Any one of solders such as -silver-based and gold-tin-based, and brazing materials such as low melting point metals can be used.

The light emitting device according to the embodiment of the present invention includes a liquid crystal display backlight device, various lighting fixtures, a large display, various display devices such as advertisements and destination guides, a projector device, and a digital video camera, a facsimile, and a copier. , Can be used as an image reading device in a scanner or the like.

1000, 1000A, 2000, 2000A, 3000, 3000A, 3000B, 3000C, 3000D Light emitting device 10 Board 11 Base material 12 1st wiring 13 2nd wiring 14 3rd wiring 15 vias
151 4th wiring
152 Filling member 16 Indentation 18 Insulating film 20 Light emitting element 30 Translucent member 40 First reflective member 41 Second reflective member 42 Third reflective member 50 Light guide member 60 Conductive adhesive member

Claims (10)

A first wiring, a second wiring, a substrate provided with at least one recess, and a substrate having vias located inside the substrate.
With at least one light emitting element mounted on the first wiring and electrically connected to the first wiring,
With the first reflective member
With
The substrate has a rectangular front surface, a back surface located on the opposite side of the front surface, a bottom surface adjacent to the front surface and orthogonal to the front surface, and an upper surface located on the opposite side of the bottom surface.
The at least one recess is open to the bottom surface and the back surface of the base material.
The first reflective member covers the side surface of the light emitting element and the front surface of the substrate.
The first wiring and the second wiring are arranged on the front surface and the back surface of the base material, respectively.
The via is arranged at a position overlapping the first portion of the first wiring in a front view, and electrically connects the first wiring and the second wiring to each other.
The first wiring includes the first portion and second portion continuous with the rectangular longitudinal direction in front view,
Said first portion, said rectangular width along the lateral direction is much larger than the width of said second portion,
The at least one light emitting element has an electrode and has an electrode.
The first portion of the first wiring includes a portion of the at least one light emitting element that overlaps with the electrode and the via in a front view . A first wiring, a second wiring, a substrate provided with at least one recess, and a substrate having vias located inside the substrate.
With at least one light emitting element mounted on the first wiring and electrically connected to the first wiring,
With the first reflective member
With
The substrate has a rectangular front surface, a back surface located on the opposite side of the front surface, a bottom surface adjacent to the front surface and orthogonal to the front surface, and an upper surface located on the opposite side of the bottom surface.
The at least one recess is open to the bottom surface and the back surface of the base material.
The first reflective member covers the side surface of the light emitting element and the front surface of the substrate.
The first wiring and the second wiring are arranged on the front surface and the back surface of the base material, respectively.
The via electrically connects the first wiring and the second wiring to each other.
The first wiring includes a first portion and a second portion which are continuous in the longitudinal direction of the rectangle in a front view.
The width of the first portion along the rectangular side is larger than the width of the second portion.
The at least one light emitting element has an electrode and has an electrode.
Wherein the second portion of the first wiring, the in a front view including a portion overlapping with the electrode of the at least one light emitting element, light emission device. The electrode according to claim 1 or 2, wherein the electrode of the at least one light emitting element includes a portion overlapping the first portion of the first wiring and a portion overlapping the second portion of the first wiring in a front view. Light emitting device. The light emitting device according to any one of claims 1 to 3, wherein the center of the via overlaps the first portion of the first wiring in a front view. The light emitting device according to any one of claims 1 to 4, wherein the depth of the at least one recess in the front direction from the back surface of the base material is larger on the bottom surface side than on the top surface side of the base material. The light emitting device according to any one of claims 1 to 5, wherein the side surface of the first reflecting member in the lateral direction and the side surface of the substrate in the lateral direction are substantially on the same plane. Further provided with a translucent member for covering the light emitting element,
The light emitting device according to any one of claims 1 to 6, wherein the first reflective member covers a side surface of the translucent member. The first reflective member has longitudinal side surfaces on the bottom surface side and the top surface side of the base material.
Of the side surfaces of the first reflective member, the side surface of the base material located on the bottom surface side and the side surface of the base material located on the upper surface side are inside the light emitting device in the front direction from the back surface. The light emitting device according to any one of claims 1 to 7, which is inclined. The light emitting device according to any one of claims 1 to 8, wherein the via is arranged at a position that does not overlap with the at least one recess in a rear view. The light emitting device according to any one of claims 1 to 9, wherein the at least one recess is provided at a position overlapping the second portion of the first wiring in a front view.

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