TWI793234B - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- TWI793234B TWI793234B TW107146584A TW107146584A TWI793234B TW I793234 B TWI793234 B TW I793234B TW 107146584 A TW107146584 A TW 107146584A TW 107146584 A TW107146584 A TW 107146584A TW I793234 B TWI793234 B TW I793234B
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- Prior art keywords
- light
- wiring
- emitting element
- emitting device
- substrate
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Classifications
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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Abstract
Description
本發明係關於一種發光裝置。The present invention relates to a light emitting device.
已知一種發光裝置,其具有經由通孔電性連接於電極圖案之凹部電極,且將凹部電極藉由焊料電性連接於母板之電極,而可安裝於母板(例如參照專利文獻1)。 [先前技術文獻] [專利文獻]A light-emitting device is known, which has a concave electrode electrically connected to an electrode pattern through a through hole, and electrically connects the concave electrode to the electrode of the motherboard by solder, so that it can be mounted on the motherboard (for example, refer to Patent Document 1) . [Prior Art Literature] [Patent Document]
[專利文獻1]日本專利特開2012-124191號公報[Patent Document 1] Japanese Patent Laid-Open No. 2012-124191
[發明所欲解決之問題][Problem to be solved by the invention]
由於隨著發光元件(LED元件)之高輸出化而發熱量增加,故要求散熱性較高之發光裝置。因此,本發明之實施形態以提供一種散熱性較高之發光裝置為目的。 [解決問題之技術手段]Since the amount of heat generated increases with higher output of light-emitting elements (LED elements), light-emitting devices with high heat dissipation are required. Therefore, the embodiment of the present invention aims to provide a light-emitting device with high heat dissipation. [Technical means to solve the problem]
本發明之一態樣之發光裝置具備:基板,其具備具有於長邊方向即第1方向及短邊方向即第2方向延伸之正面、位於上述正面之相反側之背面、與上述正面隣接且與上述正面正交之底面、及位於上述底面之相反側之上表面之基材、配置於上述正面之第1配線、及配置於上述背面之第2配線;至少1個發光元件,其與上述第1配線電性連接,載置於上述第1配線上;及第1反射構件,其被覆上述發光元件之側面及上述基板之正面,上述基材具有於上述背面及上述底面開口之至少1個凹部,上述基板具備被覆上述凹部之內壁,且與上述第2配線電性連接之第3配線,及與上述第1配線、上述第2配線及上述第3配線相接之導通孔。 [發明之效果]A light-emitting device according to an aspect of the present invention includes: a substrate having a front surface extending in a first direction that is a long side direction and a second direction that is a short side direction, a back surface that is located on the opposite side of the front surface, adjacent to the front surface, and The bottom surface orthogonal to the above-mentioned front surface, and the base material on the upper surface opposite to the above-mentioned bottom surface, the first wiring arranged on the above-mentioned front surface, and the second wiring arranged on the above-mentioned back surface; at least one light-emitting element, which is connected to the above-mentioned The first wiring is electrically connected and placed on the first wiring; and the first reflection member covers the side surface of the light emitting element and the front surface of the substrate, and the base material has at least one opening on the back surface and the bottom surface The recess, the substrate having a third wiring covering the inner wall of the recess and electrically connected to the second wiring, and a via hole connected to the first wiring, the second wiring, and the third wiring. [Effect of Invention]
根據本發明之實施形態之發光裝置,可提供一種散熱性較高之發光裝置。According to the light-emitting device according to the embodiment of the present invention, a light-emitting device with high heat dissipation can be provided.
以下適當參照圖式,針對發明之實施形態進行說明。惟以下說明之發光裝置係用以將本發明之技術思想具體化者,只要無特定之記載,則非本發明限定於以下者。又,一實施形態中說明之內容亦可應用於其他實施形態及變化例。再者,為了明確說明,而有誇大圖式所示之構件之大小及位置關係等之情形。Embodiments of the invention will be described below with reference to the drawings as appropriate. However, the light-emitting device described below is used to embody the technical idea of the present invention, and unless otherwise specified, the present invention is not limited to the following. In addition, the content described in one embodiment can also be applied to other embodiments and modifications. In addition, for the sake of clarity, the size and positional relationship of components shown in the drawings may be exaggerated.
<實施形態1>
基於圖1A至圖8B說明本發明之實施形態之發光裝置1000。發光裝置1000具備基板10、至少1個發光元件20及第1反射構件40。基板10具備基材11、第1配線12、第2配線13、第3配線14及導通孔15。基材11具有於長邊方向即第1方向及短邊方向即第2方向延長之正面111、位於正面之相反側之背面112、與正面111隣接且與正面111正交之底面113、及位於底面113之相反側之上表面114。基材11進而具有至少1個凹部16。第1配線12配置於基材11之正面111。第2配線13配置於基材11之背面112。發光元件20與第1配線12電性連接,且載置於第1配線12上。第1反射構件40被覆發光元件20之側面202及基板之正面111。至少1個凹部於背面112及底面113開口。第3配線14被覆凹部之內壁,與第2配線電性連接。導通孔15與第1配線12、第2配線13及第3配線14相接。導通孔15將第1配線12、第2配線13及第3配線14電性連接。又,導通孔15自基材11之正面111貫通背面112。另,本說明書中所謂正交意指90±3°。<
導通孔15與第1配線12、第2配線13及第3配線14相接。藉此,由於來自發光元件之熱可自第1配線12經由導通孔15傳遞至第2配線13及/或第3配線14,故可提高發光裝置1000之散熱性。導通孔15與第2配線13及第3配線14相接之情形時,如圖3所示,於後視時導通孔15與第2配線13及第3配線14重疊。另,基板具備複數個導通孔之情形時,可為複數個導通孔全數與第1配線、第2配線及第3配線相接,亦可為複數個導通孔非全數與第1配線、第2配線及第3配線相接。例如,基板具備複數個導通孔之情形時,可為一導通孔與第1配線、第2配線及第3配線相接,另一導通孔與第1配線、第2配線相接,且與第3配線離開。藉由將複數個導通孔中一部分的導通孔與第1配線、第2配線及第3配線相接,而可提高發光裝置之散熱性。導通孔15較佳為後視時為圓形狀。藉此,可容易藉由鑽孔器等形成。導通孔15於後視時為圓形狀之情形時,導通孔之直徑較佳為100 μm以上150 μm以下。導通孔之直徑為100 μm以上則發光裝置之散熱性提高,導通孔之直徑為150 μm以下則基板之強度降低獲得減輕。本說明書中,圓形狀不僅為正圓,亦為包含接近其之形狀(例如亦可為如將橢圓形狀,或將四角形之四角大幅度倒角成圓弧狀之形狀)。於後視時,較佳為導通孔與第2配線13重疊之面積大於導通孔與第3配線14重疊之面積。藉此,可增大導通孔之體積,故發光裝置之散熱性提高。又,較佳為導通孔於Y方向上位於基板之中央。藉此,於Y方向上導通孔之端部至基材之端部之基材厚度中,可減少基材之厚度變薄之部分,故基材之強度提高。The
如圖4A~圖4C所示,導通孔15自背面起於正面方向(Z方向)上,具有導通孔15與第3配線14相接之部分D1。藉此,於X方向及Y方向上,不僅導通孔15與第3配線14相接,且導通孔15與第3配線14自背面起於正面方向(Z方向)亦相接,故可增大導通孔15與第3配線14之接觸面積。藉此,由於來自發光元件之熱易自第1配線12經由導通孔15傳遞至第3配線14,故可提高發光裝置1000之散熱性。另,本說明書中,亦將自背面起之正面方向稱為Z方向。As shown in FIGS. 4A to 4C , the
發光裝置1000可藉由形成於凹部16內之焊料等接合構件而固定於安裝基板。對於被覆凹部16之內壁之第3配線,有施加由接合構件之熱膨脹等引起之力之虞。因導通孔15於Z方向上具有導通孔15與第3配線14相接之部分D1,故導通孔15與第3配線14之接合強度提高。藉此,即使來自接合構件等之力施加於第3配線,亦可抑制第3配線14自基材11剝離。The
導通孔15亦可藉由於基材之貫通孔內填充導電性材料而構成,如圖2A所示,亦可具備被覆基材之貫通孔的表面之第4配線151、及填充於由第4配線151包圍之區域之填充構件152。填充構件152可為導電性,亦可為絕緣性。較佳為對填充構件152使用樹脂材料。一般而言,由於硬化前之樹脂材料流動性高於硬化前之金屬材料,故易填充於第4配線151內。因此,藉由對填充構件使用樹脂材料,則基板之製造變容易。作為易填充之樹脂材料,舉出例如環氧樹脂。使用樹脂材料作為填充構件之情形時,為降低線膨脹係數,較佳為含有添加構件。如此,由於與第4配線之線膨脹係數之差變小,故可抑制因來自發光元件之熱而於第4配線與填充構件之間產生間隙。作為添加構件,舉出例如氧化矽。又,對填充構件152使用金屬材料之情形時,可提高散熱性。又,將導通孔15於基材之貫通孔內填充導電性材料而構成之情形時,較佳為使用熱傳導性較高之Ag、Cu等金屬材料。The
基板所具備之凹部數量可為1個,亦可為複數個。藉由具有複數個凹部,可提高發光裝置1000與安裝基板之接合強度。凹部之深度可為上表面側與底面側為相同深度,亦可為底面側深於上表面側。如圖2B所示,因Z方向上之凹部16之深度在底面側深於上表面側,故而於Z方向上可使位於凹部之上表面側之基材厚度W1厚於位於凹部之底面側之基材厚度W2。藉此,可抑制基材之強度降低。又,因底面側之凹部深度W3深於上表面側之凹部深度W4,故形成於凹部內之接合構件之體積增加,因而可提高發光裝置1000與安裝基板之接合強度。發光裝置1000無論是使基材11之背面112與安裝基板對向而安裝之頂部發光型(正發光型),或是使基材11之底面113與安裝基板對向而安裝之側面發光型(側發光型),由於接合構件之體積增加,故可提高與安裝基板之接合強度。The number of recesses included in the substrate may be one or plural. By having a plurality of recesses, the bonding strength between the light emitting
發光裝置1000與安裝基板之接合強度尤其於側面發光型之情形時可提高。因Z方向之凹部深度於底面側深於上表面側,故可增大底面之凹部之開口部之面積。因與安裝基板對向之底面之凹部之開口部之面積變大,故亦可增大位於底面之接合構件之面積。藉此,由於可增大位於與安裝基板對向面之接合構件之面積,故可提高發光裝置1000與安裝基板之接合強度。The bonding strength between the light-emitting
Z方向上之凹部之最大深度較佳為Z方向上之基材厚度之0.4倍至0.9倍。因凹部之深度較基材之厚度深0.4倍,故形成於凹部內之接合構件之體積增加,因而可提高發光裝置與安裝基板之接合強度。因凹部之深度較基材之厚度淺0.9倍,故可抑制基材之強度降低。The maximum depth of the concave portion in the Z direction is preferably 0.4 to 0.9 times the thickness of the substrate in the Z direction. Since the depth of the concave portion is 0.4 times deeper than the thickness of the substrate, the volume of the bonding member formed in the concave portion increases, thereby improving the bonding strength between the light emitting device and the mounting substrate. Since the depth of the concave portion is 0.9 times shallower than the thickness of the base material, the strength reduction of the base material can be suppressed.
如圖2B所示,凹部16較佳為具備自背面112朝與底面113平行之方向(Z方向)延伸之平行部161。藉由具備平行部161,可於Z方向上增大導通孔與第3配線相接的部分D1之面積,故可提高發光裝置之散熱性。又,藉由具備平行部161,即使背面之凹部之開口部之面積相同亦可增大凹部之體積。藉由增大凹部之體積而可增加可形成於凹部內之焊料等接合構件之量,故可提高發光裝置1000與安裝基板之接合強度。另,本說明書中所謂平行意指容許±3°左右之傾斜。又,於剖視下,凹部16具備自底面113朝基材11之厚度變厚之方向傾斜之傾斜部162。傾斜部162可為直線,亦可彎曲。As shown in FIG. 2B , the
Y方向上之凹部之最大高度較佳為Y方向上之基材厚度之0.3倍至0.75倍。因Y方向上之凹部深度較基材之厚度長0.3倍,則形成於凹部內之接合構件之體積增加,故可提高發光裝置與安裝基板之接合強度。因Y方向上之凹部長度較基材之厚度淺0.75倍,而可抑制基材之強度降低。The maximum height of the concave portion in the Y direction is preferably 0.3 to 0.75 times the thickness of the base material in the Y direction. Since the depth of the concave portion in the Y direction is 0.3 times longer than the thickness of the substrate, the volume of the bonding member formed in the concave portion increases, so the bonding strength between the light emitting device and the mounting substrate can be improved. Since the length of the concave portion in the Y direction is 0.75 times shallower than the thickness of the base material, the strength reduction of the base material can be suppressed.
如圖3所示,於背面,凹部之開口形狀較佳為半圓形狀。因凹部之開口形狀為無角部之半圓形狀,而可抑制對於凹部之應力集中,故可抑制基材破裂。本說明書中,所謂半圓形狀不僅為正半圓,亦包含與其相近之形狀(例如橢半圓形狀)者。As shown in FIG. 3 , on the back side, the shape of the opening of the concave portion is preferably a semicircular shape. Since the opening shape of the concave portion is a semicircular shape without corners, the stress concentration on the concave portion can be suppressed, so the cracking of the base material can be suppressed. In this specification, the so-called semicircular shape is not limited to a perfect semicircle, but also includes shapes close to it (for example, an elliptical semicircular shape).
如圖3所示,於背面,若凹部16有複數個之情形,較佳為相對於與第2方向(Y方向)平行之基材之中心線3C左右對稱地配置。藉此,將發光裝置經由接合構件安裝於安裝基板時自動對準有效發揮作用,可精度良好地將發光裝置安裝於安裝範圍內。As shown in FIG. 3 , if there are
於底面,Z方向之凹部深度可大致固定,亦可為凹部之深度在中央與端部不同。如圖5所示,於底面,凹部16中央之深度D2較佳為Z方向上之凹部之最大深度。藉此,於底面,於X方向之凹部之端部可增厚Z方向之基材厚度D3,故可提高基材之強度。另,本說明書中所謂的中央意指容許5 μm左右之變動。凹部16可以鑽孔器或雷射等眾所周知之方法形成。On the bottom surface, the depth of the concave portion in the Z direction may be substantially constant, or the depth of the concave portion may be different between the center and the end. As shown in FIG. 5 , on the bottom surface, the depth D2 at the center of the
如圖5所示,較佳為相對於與第2方向(Y方向)平行之基材之中心線5C,自第1反射構件40露出於發光裝置之外側面之第1配線12位於偏左右任一側。藉此,可根據自第1反射構件40露出於發光裝置之外側面之第1配線12之位置,辨識發光裝置之極性。又,相對於與第2方向(Y方向)平行之基材之中心線5C,自第1反射構件40露出於發光裝置之外側面之第1配線12位於左右任一側之情形時,較佳為相對於中心線5C位於左側,自第1反射構件40露出於發光裝置之外側面之第1配線12之形狀,與相對於中心線5C位於右側且自第1反射構件40露出於發光裝置之外側面之第1配線12之形狀不同。藉此,可根據自第1反射構件40露出於發光裝置之外側面之第1配線之形狀12,辨識發光裝置之極性。As shown in FIG. 5 , it is preferable that the
如圖6A所示,第1配線12、第2配線13及/或第3配線14亦可具有配線主部12A、及形成於配線主部12A上之鍍覆12B。本說明書中,所謂配線是指第1配線12、第2配線13及/或第3配線14。作為配線主部12A,可使用銅等眾所周知之材料。於配線主部12A上具有鍍覆12B,可提高配線表面之反射率、抑制硫化。例如,亦可使含磷之鍍鎳120A位於配線主部12A上。鎳因含有磷故硬度提高,因而,藉由含磷之鍍鎳120A位於配線主部12A上,配線之硬度提高。藉此,可抑制因發光裝置之單片化等而於切斷配線時配線產生毛邊。含磷之鍍鎳可以電解鍍覆法形成,亦可以無電解鍍覆法形成。As shown in FIG. 6A , the
如圖6A所示,較佳為鍍金120B位於鍍覆12B之最表面。藉由鍍金位於鍍覆之最表面,而抑制第1配線12、第2配線13及/或第3配線14之表面氧化、腐蝕,獲得良好之焊接性,可提高反射率、或抑制硫化。較佳為藉由電解鍍覆法形成位於鍍覆12B之最表面之鍍金120B。電解鍍覆法可較無電解鍍覆法更為減少含有硫等之觸媒毒。於與鍍金相接之位置將使用鉑系觸媒之附加反應型矽酮樹脂硬化之情形時,藉由電解鍍覆法形成之鍍金含有較少之硫,故可抑制硫與鉑反應。藉此,可抑制使用鉑系觸媒之附加反應型矽酮樹脂導致硬化不良。如要形成與含磷之鍍鎳120A相接之鍍金120B,含磷之鍍鎳120A及鍍金120B較佳為以電解鍍覆法形成。藉由以同一方法形成鍍覆,而可抑制發光裝置之製造成本。另,所謂鍍鎳可含有鎳,所謂鍍金可為僅含有金,亦可含有其他材料。As shown in FIG. 6A , it is preferable that the
較佳為含磷之鍍鎳之厚度較鍍金之厚度更厚。因含磷之鍍鎳之厚度較鍍金之厚度更厚,故易提高第1配線12、第2配線13及/或第3配線14之硬度。含磷之鍍鎳之厚度較佳為鍍金之厚度之5倍以上500倍以下,更佳為10倍以上100倍以下。Preferably, the nickel plating containing phosphorous is thicker than the gold plating. Since the thickness of phosphorus-containing nickel plating is thicker than that of gold plating, it is easy to increase the hardness of the
如圖6B所示之發光裝置1000A,配線亦可於配線主部12A上形成積層有含磷之鍍鎳120C、鍍鈀120D、第1鍍金120E、第2鍍金120F之鍍覆12B。藉由積層含磷之鍍鎳120C、鍍鈀120D、第1鍍金120E、第2鍍金120F,例如於配線主部12A使用銅之情形時,可抑制銅於鍍覆12B中擴散。藉此,可抑制鍍覆之各層之密著性降低。亦可藉由無電解鍍覆法於配線主部12A上形成含磷之鍍鎳120C、鍍鈀120D、第1鍍金120E,藉由電解鍍覆法形成第2鍍金120F。因藉由電解鍍覆法形成之第2鍍金120F位於最表面,從而可抑制使用鉑系觸媒之附加反應型矽酮樹脂之硬化不良。In the light-emitting
如圖2A所示,發光元件20具備與基板10對向之載置面、及位於載置面之相反側之光取出面201。發光元件20至少包含半導體積層體23,於半導體積層體23設有正負電極21、22。較佳為將正負電極21、22形成於與發光元件20相同側之面,將發光元件20覆晶安裝於基板10。藉此,由於不需要對發光元件之正負電極供電之線圈,故可將發光裝置小型化。覆晶安裝有發光元件之情形時,將發光元件之正負電極所在之面即電極形成面203,將相反側之面設為光取出面201。另,本實施形態中,發光元件20具有元件基板24,但亦可將元件基板24去除。發光元件20覆晶安裝於基板10之情形時,發光元件之正負電極21、22經由導電性接著構件60而連接於第1配線12。As shown in FIG. 2A , the
發光元件20覆晶安裝於基板10之情形時,如圖2A、圖7A所示,較佳為於前視下,在與發光元件20之正負電極21、22重疊之位置,第1配線12具備凸部121。因第1配線12具備凸部121,經由導電性接著構件60連接第1配線12及發光元件之正負電極21、22時,可容易地利用自動對準效果進行發光元件與基板之對位。When the light-emitting
如圖7B所示,於前視下,第1配線12亦可具備於X方向延伸之配線延伸部123,如圖7C所示,第1配線12亦可不具備於X方向延伸之配線延伸部123。配線延伸部123是指於前視下具有較與發光元件20重疊之第1配線12之寬度更窄之寬度,且自與發光元件20重疊之第1配線12之部分延伸之第1配線12之部分。當配線延伸部於X方向延伸之情形時,與發光元件重疊之第1配線之部分之寬度及配線延伸部之寬度係Y方向之寬度;當配線延伸部於Y方向延伸之情形時,與發光元件重疊之第1配線之部分寬度及配線延伸部之寬度係X方向之寬度。配線延伸部123可於前視下延伸至基材之外緣,亦可與基材之外緣離開。於前視下,當配線延伸部123自載置發光元件之預定位置朝X+方向及/或X-方向延伸而形成之情形時,將發光元件載置於基板時,可將配線延伸部123作為記號進行載置。將X軸上之X+方向於前視下設為從左向右之方向,將X+方向之相反方向設為X-方向。藉此,將發光元件載置於基板變容易。第1配線12可僅具備1個配線延伸部123,亦可具備複數個配線延伸部123。具備複數個配線延伸部123之情形時,較佳為於X方向上,配線延伸部123位於發光元件之兩側。藉此,可將位於發光元件兩側之配線延伸部123作為記號,故將發光元件載置於基板之位置精度提高。又,於發光元件上載置透光性構件之情形時,亦於俯視下配線延伸部自載置透光性構件之預定位置延伸而形成,從而於發光元件上載置透光性構件時,可將配線延伸部作為記號進行載置。藉此,於發光元件上載置透光性構件變容易。第1配線12不具備於X方向延伸之配線延伸部123之情形時,可增大X方向上基材與反射構件之接觸面積。藉此,可提高基材與反射構件之接合強度。又,第1配線12不具備於X方向延伸之配線延伸部123之情形時,導電性接著構件不滲開至於X方向延伸之配線延伸部123上。藉此,由於可縮小導電性接著構件之滲開面積,故易控制導電性接著構件之形狀。As shown in FIG. 7B , in front view, the
如圖7A所示,第1配線12亦可具備於Y方向延伸之配線延伸部,如圖7B所示,第1配線12亦可不具備於Y方向延伸之配線延伸部。若第1配線12具備於Y方向延伸之配線延伸部,可將配線延伸部作為標記,故將發光元件載置於基板之Y方向之位置精度提高。若第1配線12不具備於Y方向延伸之配線延伸部,由於可增大Y方向上基材與反射構件之接觸面積,故基材與反射構件之接合強度提高。又,若第1配線不具備於Y方向延伸之配線延伸部,可使導電性接著構件不滲開至於Y方向延伸之配線延伸部上。藉此,由於可縮小導電性接著構件之滲開面積,故易控制導電性接著構件之形狀。As shown in FIG. 7A , the
若不具備於Y方向延伸之配線延伸部,Y方向上之第1配線之長度L2較佳為Y方向上之基材長度L1之0.3倍以上0.9倍以下。Y方向上之第1配線之長度L2為Y方向上之基材長度L1之0.3倍以上,則第1配線之面積增加,故易載置發光元件。Y方向上之第1配線之長度L2為Y方向之基材長度L1之0.9倍以下,可增大基材與反射構件之接觸面積。又,Y方向上之第1配線之長度L2為Y方向上之基材長度L1之0.9倍以下,可縮小導電性接著構件滲開至第1配線上之面積。另,具備於Y方向延伸之配線延伸部之情形時,除於Y方向延伸之配線延伸部以外之部分之Y方向上之第1配線12之長度較佳為Y方向上之基材長度之0.3倍以上0.9倍以下。If there is no wiring extension extending in the Y direction, the length L2 of the first wiring in the Y direction is preferably not less than 0.3 times and not more than 0.9 times the length L1 of the base material in the Y direction. If the length L2 of the first wiring in the Y direction is at least 0.3 times the length L1 of the base material in the Y direction, the area of the first wiring increases, making it easy to mount the light emitting element. The length L2 of the first wiring in the Y direction is not more than 0.9 times the length L1 of the base material in the Y direction, so that the contact area between the base material and the reflective member can be increased. Also, the length L2 of the first wiring in the Y direction is not more than 0.9 times the length L1 of the base material in the Y direction, so that the area where the conductive adhesive member bleeds onto the first wiring can be reduced. In addition, when there is a wiring extension extending in the Y direction, the length of the
發光裝置1000亦可具備被覆發光元件20之透光性構件30。因發光元件由透光性構件被覆,可保護發光元件20免受外部應力。透光性構件30亦可經由導光構件50而被覆發光元件20。導光構件50可僅位於發光元件之光取出面201與透光性構件30之間而固定發光元件20與透光性構件30,亦可自發光元件之光取出面201被覆至發光元件之側面202而固定發光元件20與透光性構件30。導光構件50之自發光元件20之光透過率高於第1反射構件40。因此,因導光構件50被覆至發光元件之側面202,故自發光元件20之側面出射之光易通過導光構件50而朝發光裝置之外側取出,故可提高光取出效率。The
發光裝置具備透光性構件30之情形時,較佳為透光性構件之側面由第1反射構件40被覆。藉此,發光區域與非發光區域之對比度較高,可成為「分界性」良好之發光裝置。When the light-emitting device includes the
透光性構件30亦可含有波長轉換粒子32。波長轉換粒子32係吸收發光元件20發出之一次光之至少一部分而發出與一次光不同波長之二次光之構件。藉由使透光性構件30含有波長轉換粒子32,而可輸出將發光元件20發出之一次光與波長轉換粒子32發出之二次光加以混色之混色光。例如,若對發光元件20使用藍色LED,對波長轉換粒子32使用YAG等螢光體,可構成輸出使藍色LED之藍色光與被該藍色光激發而由螢光體發出之黃色光混合而得之白色光之發光裝置。The
波長轉換粒子可均一地分散於透光性構件中,亦可使波長轉換粒子較透光性構件30之上表面更偏佈於發光元件附近。藉由使波長轉換粒子較透光性構件30之上表面更偏佈於發光元件附近,即使使用不耐水之波長轉換粒子32,透光性構件30之母材31亦作為保護層發揮功能,故可抑制波長轉換粒子32劣化。又,如圖2A所示,透光性構件30亦可具備含有波長轉換粒子32之層,及實質不含波長轉換粒子之層33。於Z方向上,實質不含波長轉換粒子之層33位於較含有波長轉換粒子32之層更上側。藉此,由於實質不含波長轉換粒子之層33亦作為保護層發揮功能,故可抑制波長轉換粒子32劣化。作為不耐水之波長轉換粒子32,舉出舉出例如錳激活氟化物螢光體。錳激活氟化物系螢光體係於獲得光譜線寬較窄之發光之色重現性觀點上為較佳之構件。所謂「實質不含波長轉換粒子」意指未排除不可避免地混入之波長轉換粒子,波長轉換粒子之含有率較佳為0.05重量%以下。The wavelength conversion particles can be uniformly dispersed in the light-transmitting member, or the wavelength-converting particles can be more distributed near the light-emitting element than the upper surface of the light-transmitting
第1反射構件40被覆發光元件20之側面及基板之正面。第1反射構件40可反射藉由被覆發光元件之側面而自發光元件20朝X方向及/或Y方向前進之光,增加朝Z方向前進之光。The first
如圖5所示,較佳為第1反射構件40之短邊方向之側面405與基板10之短邊方向之側面105實質位在同一平面上。藉此,由於可縮短第1方向(X方向)之寬度,故可將發光裝置小型化。As shown in FIG. 5 , preferably, the
如圖8所示,較佳為位於底面113側之第1反射構件40之長邊方向之側面403於Z方向上朝發光裝置1000之內側傾斜。藉此,將發光裝置1000安裝於安裝基板時,抑制第1反射構件40之側面403與安裝基板之接觸,發光裝置1000之安裝姿勢易穩定。較佳為位於上表面114側之第1反射構件40之長邊方向之側面404於Z方向上朝發光裝置1000之內側傾斜。藉此,可抑制第1反射構件40之側面與吸附噴嘴(夾頭)接觸,並抑制吸附發光裝置1000時損傷第1反射構件40。如此,較佳為位於底面113側之第1反射構件40之長邊方向之側面403及位於上表面114側之第1反射構件40之長邊方向之側面404自背面於正面方向(Z方向)上朝發光裝置1000之內側傾斜。第1反射構件40之傾斜角度θ可適當選擇,但由此種效果之奏效容易度及第1反射構件40之強度之觀點而言,較佳為0.3°以上3°以下,更佳為0.5°以上2°以下,尤佳為0.7°以上1.5°以下。又,發光裝置1000之右側面與左側面較佳設為大致相同形狀。藉此,可將發光裝置1000小型化。As shown in FIG. 8 , it is preferable that the
<實施形態2>
圖9A~12所示之本發明之實施形態2之發光裝置2000與實施形態1之發光裝置1000相比,其不同點在於,載置於基板上之發光裝置之數、基材所具備之凹部及導通孔之數、及具備絕緣膜。<Embodiment 2>
The
如圖10所示,由於導通孔15與第1配線12、第2配線13及第3配線14相接,故可提高發光裝置2000之散熱性。位於1個凹部內之第3配線14亦可連接於1個導通孔15,位於1個凹部內之第3配線14亦可連接於複數個導通孔15。藉由第3配線14連接於複數個導通孔15,發光裝置之散熱性進而提高。如圖11所示,連接於位於1個凹部內之第3配線14之導通孔有2個之情形時,一導通孔與另一導通孔亦可相對於平行於第2方向(Y方向)之凹部之中心線11C左右對稱地位在。As shown in FIG. 10 , since the via
如圖10所示,發光裝置2000亦可具備第1發光元件20A及第2發光元件20B。第1發光元件20A之發光峰值波長與第2發光元件20B之發光峰值波長可相同,亦可不同。若第1發光元件20A之發光峰值波長與第2發光元件20B之發光峰值波長不同,較佳為第1發光元件20A之發光峰值波長在430 nm以上490 nm以下之範圍內(藍色區域之波長範圍),第2發光元件20B之發光峰值波長在490 nm以上570 nm以下之範圍內(綠色區域之波長範圍)。藉此,可提高發光裝置之顯色性。As shown in FIG. 10 , the
若發光裝置具備複數個發光元件(第1發光元件20A及第2發光元件20B),較佳為複數個發光元件於第1方向(X方向)並排設置。藉此,由於可縮短發光裝置2000之第2方向(Y方向)之寬度,故可將發光裝置薄型化。If the light emitting device includes a plurality of light emitting elements (first
如圖10所示,第1發光元件20A及第2發光元件20B可由1個透光性構件30被覆,如圖12A、圖12B所示之發光裝置2000A,第1發光元件20A及第2發光元件20B各自亦可由不同之透光性構件被覆。將第1發光元件20A及第2發光元件20B由1個透光性構件30被覆,可增大透光性構件30之大小,故發光裝置之光取出效率提高。藉由第1發光元件20A及第2發光元件20B分別由不同之透光性構件被覆,可於一透光性構件與另一透光性構件之間形成第1反射構件。藉此,可為「分界性」良好之發光裝置。As shown in FIG. 10, the first light-emitting
如圖12C所示之發光裝置2000B,透光性構件30亦可具備與發光裝置之光取出面對向之第1波長轉換層31E、及配置於第1波長轉換層31E上之第2波長轉換層31F。第1波長轉換層31E包含母材312E及第1波長轉換粒子311E。第2波長轉換層31F包含母材312F及第2波長轉換粒子311F。較佳為來自被發光元件激發之第1波長轉換粒子311E之光之峰值波長短於來自被發光元件激發之第2波長轉換粒子311F之光之峰值波長。因來自被發光元件激發之第1波長轉換粒子311E之光之峰值波長短於來自被發光元件激發之第2波長轉換粒子311F之光之峰值波長,故可藉由來自被發光元件激發之第1波長轉換粒子311E之光而激發第2波長轉換粒子311F。藉此,可增加來自被激發之第2波長轉換粒子311F之光。由於第2波長轉換層31F配置於第1波長轉換層31E上,故來自被發光元件激發之第1波長轉換粒子311E之光易朝第2波長轉換粒子311F出射。In the light-emitting
較佳為來自被發光元件激發之第1波長轉換粒子311E之光之峰值波長為500 nm以上570 nm以下,來自被發光元件激發之第2波長轉換粒子311F之光之峰值波長為610 nm以上750 nm以下。藉此,可為顯色性較高之發光裝置。例如,作為第1波長轉換粒子,舉出β賽隆系螢光體,作為第2波長轉換粒子,舉出錳激活氟矽酸鉀之螢光體。使用錳激活氟矽酸鉀之螢光體作為第2波長轉換粒子之情形時,尤佳為透光性構件30具備第1波長轉換層31E及第2波長轉換層31F。錳激活氟化物螢光體即第2波長轉換粒子易引起亮度飽和,但藉由使第1波長轉換層31E位於第2波長轉換層31F與發光元件之間,可抑制來自發光元件之光過度地照射於第2波長轉換粒子。藉此,可抑制錳激活氟化物螢光體即第2波長轉換粒子劣化。另,第1波長轉換粒子與第2波長轉換粒子含在同一波長轉換層之情形時,較佳為第2波長轉換粒子分散位在波長轉換層內之全體,第1波長轉換粒子偏佈於發光元件之光取出面側。例如,亦可為第1波長轉換粒子與第2波長轉換粒子於波長轉換層之發光元件之光取出面側混合,且僅第2波長轉換粒子位於波長轉換層之發光元件之光取出面側之相反面側。如為第2波長轉換粒子分散位在波長轉換層內之全體,第1波長轉換粒子偏佈於發光元件之光取出面側之情形時,由於大部分的第1波長轉換粒子位於較第2波長轉換粒子更靠發光元件之光取出面側,故易藉由來自被發光元件激發之第1波長轉換粒子311E之光而激發第2波長轉換粒子311F。藉此,可增加來自被激發之第2波長轉換粒子311F之光。又,使用錳激活氟矽酸鉀之螢光體作為第2波長轉換粒子之情形時,可抑制來自發光元件之光藉由第1波長轉換粒子而過度地照射於第2波長轉換粒子。藉此,可抑制錳激活氟化物螢光體即第2波長轉換粒子劣化。Preferably, the peak wavelength of light from the first
透光性構件可僅含有1種綠色發光之波長轉換粒子,亦可含有複數種。又,可僅含有1種紅色發光之波長轉換粒子,亦可含有複數種。例如,作為來自被發光元件激發之波長轉換粒子之光之峰值波長為610 nm以上750 nm以下之波長轉換粒子,亦可使透光性構件30中含有CASN系螢光體、錳激活氟矽酸鉀之螢光體(例如K2
SiF6
:Mn)。一般而言,CASN系螢光體與錳激活氟矽酸鉀之螢光體相比,於停止激發光之照射後至波長轉換粒子之發光停止之時間即餘輝時間較短。因此,因透光性構件含有CASN系螢光體及錳激活氟矽酸鉀之螢光體,相較於透光性構件僅含有錳激活氟矽酸鉀之螢光體之情形,可更縮短餘輝時間。又,一般而言,錳激活氟矽酸鉀具有半高寬較CASN系螢光體為窄之發光峰值,故色純度變高,色重現性變得良好。因此,因透光性構件含有CASN系螢光體及錳激活氟矽酸鉀之螢光體,相較於透光性構件僅含有CASN系螢光體之情形,色重現性更為良好。The light-transmitting member may contain only one kind of green-emitting wavelength conversion particles, or may contain plural kinds. Also, only one kind of red-emitting wavelength conversion particles may be contained, or plural kinds may be contained. For example, as the wavelength conversion particle whose peak wavelength of the light from the wavelength conversion particle excited by the light-emitting element is 610 nm to 750 nm, CASN-based phosphor, manganese-activated fluorosilicic acid may be contained in the light-transmitting
例如,透光性構件中所含之錳激活氟矽酸鉀之螢光體之重量較佳為CASN系螢光體之重量之0.5倍以上6倍以下,更佳為1倍以上5倍以下,尤佳為2倍以上4倍以下。藉由錳激活氟矽酸鉀之螢光體之重量增加,發光裝置之色重現性變得良好。藉由CASN系螢光體之螢光體重量增加,可縮短餘輝時間。For example, the weight of the manganese-activated potassium fluorosilicate phosphor contained in the light-transmitting member is preferably 0.5 to 6 times the weight of the CASN-based phosphor, more preferably 1 to 5 times, More preferably, it is 2 times or more and 4 times or less. The color reproducibility of the light-emitting device becomes good by increasing the weight of the phosphor of manganese-activated potassium fluorosilicate. The afterglow time can be shortened by increasing the weight of the phosphor of the CASN-based phosphor.
錳激活氟矽酸鉀之螢光體之平均粒徑較佳為5 μm以上30 μm以下。又,CASN系螢光體之平均粒徑較佳為5 μm以上30 μm以下。透光性構件中所含之波長轉換粒子之濃度相同之情形下,波長轉換粒子之粒徑較小,則來自發光元件之光易於波長轉換粒子中擴散,故可抑制發光裝置之配光色度不均。又,透光性構件中所含之波長轉換粒子之濃度相同之情形下,波長轉換粒子之粒徑較大,則易取出來自發光元件之光,故發光裝置之光取出效率提高。The average particle size of the manganese-activated potassium fluorosilicate phosphor is preferably not less than 5 μm and not more than 30 μm. Also, the average particle diameter of the CASN-based phosphor is preferably not less than 5 μm and not more than 30 μm. When the concentration of the wavelength conversion particles contained in the light-transmitting member is the same, the particle size of the wavelength conversion particles is smaller, and the light from the light-emitting element is easily diffused in the wavelength conversion particles, so the light distribution chromaticity of the light-emitting device can be suppressed uneven. Also, when the concentration of the wavelength conversion particles contained in the light-transmitting member is the same, the larger the particle diameter of the wavelength conversion particles, the easier it is to extract the light from the light-emitting element, so the light extraction efficiency of the light-emitting device is improved.
CASN系螢光體與錳激活氟矽酸鉀之螢光體可含在透光性構件之同一波長轉換層中,透光性構件具備複數個波長轉換層之情形時,亦可含於不同之波長轉換層中。錳激活氟矽酸鉀之螢光體與CASN系螢光體含在不同波長轉換層中之情形時,較佳為在錳激活氟矽酸鉀之螢光體與CASN系螢光體中,光之峰值波長較短之波長轉換粒子位於發光元件附近。藉此,可藉由來自光之峰值波長較短之波長轉換粒子之光而激發光之峰值波長較長之波長轉換粒子。例如,錳激活氟矽酸鉀之螢光體之光之峰值波長在631 nm附近,CASN系螢光體之光之峰值波長在650 nm附近之情形時,較佳為錳激活氟矽酸鉀之螢光體較靠近發光元件。CASN-based phosphors and manganese-activated potassium fluorosilicate phosphors can be contained in the same wavelength conversion layer of the light-transmitting member, or in different wavelength conversion layers when the light-transmitting member has multiple wavelength conversion layers. in the wavelength conversion layer. In the case where the manganese-activated potassium fluorosilicate phosphor and the CASN-based phosphor are contained in different wavelength conversion layers, it is preferable that the phosphors of the manganese-activated potassium fluorosilicate and the CASN-based phosphor have the same amount of light. The wavelength conversion particles with shorter peak wavelengths are located near the light-emitting element. Thereby, the wavelength conversion particle whose peak wavelength of light is longer can be excited by the light from the wavelength conversion particle whose peak wavelength of light is shorter. For example, manganese-activated potassium fluorosilicate has a peak wavelength of light near 631 nm, and when the peak wavelength of light of a CASN-based phosphor is around 650 nm, manganese-activated potassium fluorosilicate is preferred. The phosphor is closer to the light emitting element.
透光性構件亦可含有SCASN系螢光體及錳激活氟矽酸鉀之螢光體。即使透光性構件含有SCASN系螢光體,亦可縮短餘輝時間。又,透光性構件亦可含有CASN系螢光體、錳激活氟矽酸鉀之螢光體、及β賽隆系螢光體。藉此,發光裝置之色重現性變得良好。The translucent member may also contain SCASN-based phosphors and manganese-activated potassium fluorosilicate phosphors. Even if the light-transmitting member contains SCASN-based phosphors, the afterglow time can be shortened. In addition, the translucent member may contain a CASN-based phosphor, a manganese-activated potassium fluorosilicate phosphor, and a β-sialon-based phosphor. Thereby, the color reproducibility of the light-emitting device becomes good.
如圖12C所示之發光裝置2000B,亦可具備與第1配線、第2配線及第3配線連接之導通孔15A、及與第1配線、第2配線連接而與第3配線離開之導通孔15B。如圖12D所示,於後視下,導通孔15A與第2配線13及第3配線14重疊,導通孔15B與第2配線13重疊,不與第3配線重疊。The light-emitting
如圖12C所示,導光構件50可不被覆透光性構件30之側面,亦可被覆透光性構件30之側面。透光性構件30具備與發光元件之光取出面對向之第1波長轉換層31E、配置於第1波長轉換層31E上之第2波長轉換層31F、配置於第2波長轉換層31上之實質不含波長轉換粒子之層33之情形時,亦可如圖12E所示之發光裝置2000C,第1波長轉換層31E之側面由導光構件50被覆,第2波長轉換層31F之側面及實質不含波長轉換粒子之層33之側面自導光構件50露出。又,亦可如圖12F所示之發光裝置2000D,第1波長轉換層31E之側面及第2波長轉換層31F之側面由導光構件50被覆,實質不含波長轉換粒子之層33之側面自導光構件50露出。亦可如圖12G所示之發光裝置2000E,第1波長轉換層31E之側面、第2波長轉換層31F之側面及實質不含波長轉換粒子之層33之側面由導光構件50被覆。如圖12G所示,導光構件50被覆第1波長轉換層31E之側面、第2波長轉換層31F之側面及實質不含波長轉換粒子之層33之側面之情形時,導光構件50亦可自第1反射構件40露出。藉由導光構件被覆透光性構件之側面之至少一部分,可提高發光裝置之光取出效率。如圖12H所示之發光裝置2000F,透光性構件30之側面具有凹凸之情形時,藉由以導光性構件50被覆位於透光性構件30之側面之凹凸,可提高發光裝置之光取出效率。As shown in FIG. 12C , the
如圖12I所示之發光裝置2000G,實質不含波長轉換粒子之層33較佳為包含含有反射粒子之層33A及實質不含反射粒子之層33B。因含有反射粒子之層33A位於第1波長轉換層及/或第2波長轉換層上,故來自發光元件之光會藉由含有反射粒子之層33A於透光性構件內擴散。藉此,可增加來自由發光元件之光激發之第1波長轉換粒子及/或第2波長轉換粒子之光。又,因於含有反射粒子之層33A上配置實質不含反射粒子之層33B,從而實質不含反射粒子之層33B可發揮作為含有反射粒子之層33A之保護層之功能。又,基於將發光裝置薄型化等目的,而研削透光性構件30之上表面之情形時,因於含有反射粒子之層33A上配置實質不含反射粒子之層33B,故可僅切削實質不含反射粒子之層33B。藉此,由於不研削含有反射粒子之層33A,故可抑制透光性構件中所含之反射粒子量之不均。若實質不含波長轉換粒子之層33僅有一層含有反射粒子之層,較佳為反射粒子偏佈於發光元件之光取出面側。藉此,實質不含波長轉換粒子之層33之母材可發揮作為保護層之功能。作為反射粒子,舉出氧化鈦、氧化鋯、氧化鋁、氧化矽等。反射粒子較佳為尤其具有高折射率之氧化鈦。實質不含波長轉換粒子之層之反射粒子之含有量可適當選擇,但由光反射性及液狀時之黏度等觀點而言,較佳為例如0.05 wt%以上0.1 wt%以下。In the light-emitting
如圖12J所示之發光裝置2000H,透光性構件含有波長轉換粒子之情形時,亦可具備被覆透光性構件30之上表面之被膜34。所謂被膜34是指奈米粒子即被膜粒子之凝集體。另,被膜非僅包含被膜粒子,亦可包含被膜粒子及樹脂材料。被膜之折射率與位於最表面之透光性構件之母材之折射率不同,從而可修正發光裝置之發光色度。所謂位於最表面之透光性構件之母材,意指透光性構件中形成發光元件之與光取出側之面為相反側之面的層之母材。例如,被膜34之折射率大於位於最表面之透光性構件之母材之折射率之情形時,被膜與空氣之界面之反射光成分較位於最表面之透光性構件之母材與空氣之界面之反射光成分更為增大。因此,可增加返回至透光性構件中之反射光成分,故易激發波長轉換粒子。藉此,可將發光裝置之發光色度修正為長波長側。又,被膜34之折射率小於位於最表面之透光性構件之母材之折射率之情形時,被膜與空氣之界面之反射光成分較透光構件之母材與空氣之界面之反射光成分更為減少。藉此,可減少返回至透光性構件中之反射光成分,故不易激發波長轉換粒子。藉此,可將發光裝置之發光色度修正為短波長側。例如,使用苯系矽酮樹脂作為位於最表面之透光性構件之母材之情形時,作為將發光裝置之發光色度修正為長波長側之被膜粒子,舉出氧化鈦、氧化鋁等。位於最表面之透光性構件之母材使用苯系矽酮樹脂之情形時,作為將發光裝置之發光色度修正為短波長側之被膜粒子,舉出氧化矽等。發光裝置具備複數個透光性構件之情形時,亦可以被膜被覆一透光性構件之上表面,不以被膜被覆另一透光性構件之上表面。可配合發光裝置之發光色度之修正,而適當選擇是否要形成被覆透光性構件之上表面之被膜。又,發光裝置具備複數個透光性構件之情形時,亦能以具有大於位於最表面之透光性構件之母材之折射率之折射率的被膜被覆一透光性構件之上表面,以具有小於位於最表面之透光性構件之母材之折射率之折射率的被膜被覆另一透光性構件之上表面。可配合發光裝置之發光色度之修正而適當選擇被覆透光性構件之被膜之材料。被膜可藉由施配器之灌注、噴墨或噴霧之噴吹等眾所周知之方法形成。In the light-emitting
如圖12K所示之基板10,於前視下第1配線12較佳為具備Y方向之長度較短之窄幅部、及Y方向之長度較長之寬幅部。窄幅部之Y方向之長度D4短於寬幅部之Y方向之長度D5。窄幅部於前視下與導通孔15之中心朝X方向離開,且於X方向上位於發光元件之電極所在之部分。寬幅部於前視下位於導通孔15之中心。藉由第1配線12具備寬幅部,可縮小電性連接發光元件之電極與第1配線之導電性接著構件於第1配線上滲開之面積。藉此,易控制導電性接著構件之形狀。另,第1配線之周緣部亦可為圓角形狀。In the
如圖10所示,導光構件50亦可連續被覆第1發光元件20A之光取出面201A、第1發光元件20A之側面202A、第2發光元件20B之光取出面201B及第2發光元件20B之側面202B。藉此,於第1發光元件20A之光取出面201A與第2發光元件20B之光取出面201B間,亦可取出第1發光元件20A及/或第2發光元件20B之光,故可抑制發光裝置之亮度不均。又,第1發光元件20A之發光峰值波長與第2發光元件20B之發光峰值波長不同之情形時,可於導光構件50內將來自第1發光元件20A之光與來自第2發光元件20B之光混合,故可抑制發光裝置之色偏。As shown in FIG. 10, the
發光裝置亦可具備被覆第2配線13之一部分之絕緣膜18。藉由具備絕緣膜18,可謀求後視下確保絕緣性及防止短路。又,可防止第2配線自基材剝落。The light emitting device may also include an insulating
<實施形態3>
圖13A~圖18B所示之本發明之實施形態3之發光裝置3000與實施形態2之發光裝置2000相比,其不同點在於,載置於基板上之發光裝置之數、基材所具備之凹部及導通孔之數、基材之形狀、凹部之形狀、透光性構件之構成、以及具備第2反射構件及第3反射構件。<Embodiment 3>
The
如圖14A所示,由於導通孔15與第1配線12、第2配線13及第3配線14相接,故可提高發光裝置3000之散熱性。基材所具備之凹部及導通孔之數可根據基材之大小等適當變更。As shown in FIG. 14A , since the via
如圖14A所示,基材11亦可於正面111具備凹部111A。藉由基材11具備凹部111A,可增加第1反射構件與基材11之接觸面積。藉此,可提高第1反射構件與基材之接合強度。凹部111A較佳為位於正面111之長邊方向(X方向)之兩端。藉此,可於基材之兩端提高與第1反射構件之接合強度,故可抑制第1反射構件與基材剝離。As shown in FIG. 14A , the
如圖15、圖16所示,基板10可具備:中央凹部16A,其於基材之背面及底面開口,與基材之側面105離開;及端部凹部16B,其於基材之背面、底面及側面105開口。基材之側面105位於基材之正面與背面之間。基板10因具備端部凹部16B,故可於發光裝置之端部提高與安裝基板之接合強度。具備複數個端部凹部16B之情形時,較佳為於後視下端部凹部位於基材之兩端。藉此,發光裝置之安裝基板之接合強度提高。基板10亦可僅具備中央凹部16A或端部凹部16B之任一者。另,本說明書中,所謂凹部是指中央凹部及/或端部凹部。如圖15所示,導通孔15有複數個,於後視下,亦可具備與中央凹部16A重疊之導通孔,及與端部凹部16B重疊之導通孔。As shown in Fig. 15 and Fig. 16, the
如圖14A所示,發光裝置3000亦可具備第1發光元件20A、第2發光元件20B及第3發光元件20C。另,發光裝置亦可具備4個以上的發光元件。本說明書中,所謂發光元件是指第1發光元件20A、第2發光元件20B及/或第3發光元件20C。如圖17A所示,較佳為於前視下,第1發光元件20A、第2發光元件20B及第3發光元件20C於長邊方向(X方向)並排設置。藉此,可於Y方向將發光裝置薄型化。第1發光元件及第2發光元件之光取出面為長方形之情形時,較佳為第1發光元件之光取出面之短邊2011A與第2發光元件之光取出面之短邊2011B對向。第2發光元件及第3發光元件之光取出面為長方形之情形時,較佳為第2發光元件之光取出面之短邊2012B與第3發光元件之光取出面之短邊2011C對向。藉此,可於Y方向將發光裝置薄型化。本說明書中所謂長方形,意指具備2條長邊及2條短邊且4個內角為直角之四角形。又,本說明書中所謂直角意指90±3°。As shown in FIG. 14A , the
第1發光元件20A之發光峰值波長、第2發光元件20B之發光峰值波長及第3發光元件20C之發光峰值波長可相同,亦可不同。因第1發光元件20A之發光峰值波長、第2發光元件20B之發光峰值波長及第3發光元件20C之發光峰值波長不同,可為顯色性較高之發光裝置。將第1發光元件20A、第2發光元件20B、第3發光元件20C依序排列之情形時,可為第1發光元件20A之發光峰值波長與第3發光元件20C之發光峰值波長相同,第2發光元件20B之發光峰值波長與第1發光元件20A之發光峰值波長不同。藉此,例如若第1發光元件20A之輸出不足之情形時,能以第3發光元件20C彌補。又,因具有與第1發光元件20A之發光峰值波長及第3發光元件20C之發光峰值波長不同發光峰值波長之第2發光元件20B位於第1發光元件20A與第3發光元件20C之間,故發光裝置之顯色性較高,且可減低色偏。另,本說明書中,所謂與發光峰值波長相同,意指容許±10 nm左右之變動。第1發光元件20A之發光峰值波長在430 nm以上未達490 nm之範圍(藍色區域之波長範圍)內之情形時,較佳為第3發光元件20C之發光峰值波長在430 nm以上未達490 nm之範圍內。藉此,藉由選擇在430 nm以上未達490 nm之範圍內具有激發效率之峰值波長之波長轉換粒子,而可提高波長轉換粒子之激發效率。The peak emission wavelength of the first
如圖14A所示,於Z方向上第1發光元件20A之光取出面201A與第2發光元件20B之光取出面201B可位於大致相同高度,於Z方向上第1發光元件20A之光取出面201A與第2發光元件20B之光取出面201B亦可位於不同高度。例如,如圖14B所示之發光裝置3000A,於Z方向上第1發光元件20A之光取出面201A亦可位於較第2發光元件20B之光取出面201B更下側。因於Z方向上第1發光元件20A之光取出面201A位於較第2發光元件20B之光取出面201B更下側,故來自第2發光元件20B之光易於長邊方向(X方向)擴展。又,如圖14C所示之發光裝置3000B,於Z方向上第1發光元件20A之光取出面201A亦可位於較第2發光元件20B之光取出面201B更上側。因於Z方向上第1發光元件20A之光取出面201A位於較第2發光元件20B之光取出面201B更上側,故來自第1發光元件20A之光易於長邊方向(X方向)擴展。As shown in FIG. 14A, the
如圖17A所示,可為第1發光元件20A之光取出面201A之短邊2011A與第2發光元件20B之光取出面201B之短邊2011B之長度可大致相同,亦可為第1發光元件20A之光取出面201A之短邊2011A與第2發光元件20B之光取出面201B之短邊2011B之長度不同。例如,如圖17B所示,第1發光元件20A之光取出面201A之短邊2011A之長度可長於第2發光元件20B之光取出面201B之短邊2011B之長度。藉此,來自第1發光元件20A之光易於長邊方向(X方向)擴展。又,如圖17C所示,第1發光元件20A之光取出面201A之短邊2011A之長度亦可短於第2發光元件20B之光取出面201B之短邊2011B之長度。藉此,來自第2發光元件20B之光易於長邊方向(X方向)擴展。As shown in FIG. 17A, the length of the
如圖14A所示,透光構件30亦可具備與發光裝置之光取出面對向之第1透光層31A,及配置於第1透光層31A上之波長轉換層31B。第1透光層31A包含母材312A及第1擴散粒子311A。波長轉換層31B包含母材312B及波長轉換粒子32。藉由透光性構件30具備與發光元件之光取出面對向之第1透光層31A,而將來自第1發光元件及第2發光元件之光藉由第1透光層31A擴散。藉此,由於可將來自第1發光元件、第2發光元件及/或第3發光元件之光於第1透光層31A內混合,故可減低發光裝置之亮度不均。第1發光元件、第2發光元件及/或第3發光元件具有不同的發光峰值波長之情形時,由於可將第1發光元件、第2發光元件及/或第3發光元件之光於第1透光層31A內混合,故可減低發光裝置之色偏。As shown in FIG. 14A , the light-transmitting
第1透光層31A較佳為實質不含波長轉換粒子。藉由發光元件之光激發波長轉換粒子時,吸收來自發光元件之一部分之光。因第1透光層31A位於發光元件之光取出面與波長轉換層之間,從而可於發光元件之光被波長轉換粒子吸收之前,將第1發光元件、第2發光元件及/或第3發光元件之光於第1透光層31A內混合。藉此,可抑制發光裝置之光取出效率減低。The first light-transmitting
如圖14A所示,第2透光層31C亦可位於波長轉換層31B上。第2透光層31C係實質不含波長轉換粒子之層。第2透光層31C亦可包含母材312C及第2擴散粒子311C。藉由第2透光層31C包含第2擴散粒子311C,可將來自發光元件之光與來自被發光元件激發之波長轉換粒子之光於第2透光層內混合。藉此,可減低發光裝置之色偏。例如,第2擴散粒子可為折射率低於第1擴散粒子之材料。藉此,由第2擴散粒子擴散之光減少,故發光裝置之光取出效率提高。作為第2擴散粒子之折射率低於第1擴散粒子之材料,第1擴散粒子可選擇氧化鈦,第2擴散粒子可選擇氧化矽。As shown in FIG. 14A , the second light-transmitting
如圖14A所示,亦可具備被覆第1發光元件20A之電極形成面203A、第2發光元件20B之電極形成面203B及/或第3發光元件20C之電極形成面203C之第2反射構件41。藉由發光裝置具備第2反射構件41,可抑制來自發光元件之光被基板10吸收。又,如圖2A、圖10、圖12B所示,亦可由第1反射構件被覆發光元件之電極形成面。藉此,可抑制來自發光元件之光被基板吸收。又,第2反射構件41較佳為具備愈與發光元件離開,則Z方向上之厚度愈厚之傾斜部。藉由第2反射構件41具備傾斜部,發光裝置之光取出效率提高。As shown in FIG. 14A , a
如圖14A所示,亦可於導光構件50與第1反射構件之間具備第3反射構件42。第3反射構件42經由導光構件被覆發光元件之側面。於形成第3反射構件42後以灌注等形成導光構件50,可抑制導光構件50之形狀不均。與透光性構件30對向之第3反射構件42之面較佳為平坦。藉此,形成第3反射構件42後易形成透光性構件30。另,發光裝置具備第3反射構件42之情形時,第1反射構件經由第3反射構件及導光構件而被覆第1元件側面及第2元件側面。As shown in FIG. 14A , a
如圖18A所示之發光裝置3000C,亦可具備被覆發光元件之光取出面之被覆構件。被覆構件31D包含擴散粒子311D之情形時,藉由具備被覆光取出面之被覆構件31D,而可減低朝Z方向前進之來自發光元件之光,增加朝X方向及/或Y方向前進之光。藉此,可使來自發光元件之光於導光構件內擴散,故可抑制發光裝置之亮度不均。另,被覆構件31D位於發光元件之光取出面與導光構件50之間。包含擴散粒子311D之第1被覆構件31D較佳為露出發光元件之側面之至少一部分,藉此可抑制朝X方向及/或Y方向前進之來自發光元件之光減低。被覆構件31D可被覆第1發光元件、第2發光元件及第3發光元件各者之光取出面,亦可僅被覆第1發光元件、第2發光元件或第3發光元件之光取出面內之1個光取出面。The light-emitting
被覆構件31D亦可包含波長轉換粒子。藉由具備被覆發光元件之光取出面且包含波長轉換粒子之被覆構件31D,發光裝置之色調整變容易。另,被覆構件31D中所含之波長轉換粒子可與波長轉換層中所含之波長轉換粒子相同,亦可不同。例如,發光元件之發光之峰值波長為490 nm以下570 nm以下之範圍(綠色區域之波長範圍)之情形時,波長轉換粒子較佳為以490 nm以上570 nm以下範圍之光激發之CASN系螢光體及/或SCASN系螢光體。此外,作為波長轉換粒子,亦可使用(Sr,Ca)LiAl3
N4
:Eu之螢光體。The covering
可如圖18A所示之發光裝置3000C,1個被覆構件31D被覆1個發光元件之光取出面,亦可如圖18B所示之發光裝置3000D,複數個被覆構件31D被覆1個發光元件之光取出面。如圖18B所示,藉由光取出面之一部分自被覆構件31D露出,發光元件之光取出效率提高。In the light-emitting
<實施形態4>
圖19所示之本發明之實施形態4之發光裝置4000與實施形態2之發光裝置2000相比,透光性構件之構成不同。<Embodiment 4>
The light-emitting
發光裝置4000之透光性構件30具備被覆第1發光元件20A之第1透光性構件30A、及被覆第2發光元件20B之第2透光性構件30B。第1透光性構件30A及第2透光性構件30B兩者中,構成之構件及/或構成之構件之含有量不同。例如,第1透光性構件30A及第2透光性構件30B中含有之波長轉換粒子之種類及/或波長轉換粒子之含有量不同。藉此,發光裝置之色調整變得容易。如圖19所示,亦可設為第1透光性構件30A含有波長轉換粒子,第2透光性構件30B實質不含波長轉換粒子。藉此,可提高自第2發光元件20B之光取出效率。例如,亦可設為第1發光元件20A之發光峰值波長為430 nm以上未達490 nm之範圍(藍色區域之波長範圍),第2發光元件20B之發光峰值波長為490 nm以上570 nm以下之範圍內(綠色區域之波長範圍),第1透光性構件30A含有綠色發光之波長轉換粒子及/或紅色發光之波長轉換粒子,第2透光性構件30B實質不含波長轉換粒子。另,第1透光性構件30A及第2透光性構件30B亦可設為實質不含波長轉換粒子。又,第1發光元件20A與第2發光元件之發光峰值波長可相同,亦可不同。The light-transmitting
以下,針對本發明之一實施形態之發光裝置之各構成要素進行說明。Hereinafter, each component of a light emitting device according to an embodiment of the present invention will be described.
(基板10)
基板10係載置發光元件之構件。基板10至少由基材11、第1配線12、第2配線13、第3配線14及導通孔15構成。(substrate 10)
The
(基材11)
基材11可使用樹脂或纖維強化樹脂、陶瓷、玻璃等絕緣性構件構成。作為樹脂或纖維強化樹脂,舉出環氧、玻璃環氧、雙馬來醯亞胺三嗪(BT)、聚醯亞胺等。作為陶瓷,舉出氧化鋁、氮化鋁、氧化鋯、氮化鋯、氧化鈦、氮化鈦、或該等之混合物等。該等基材中,尤較為使用具有接近發光元件之線膨脹係數之物性之基材。基材厚度之下限值可適當選擇,但由基材強度之觀點而言,較佳為0.05 mm以上,更佳為0.2 mm以上。又,基材厚度之上限值由發光裝置之厚度(深度)之觀點而言,較佳為0.5 mm以下,更佳為0.4 mm以下。(Substrate 11)
The
(第1配線12、第2配線13、第3配線14)
第1配線配置於基板之正面,與發光元件電性連接。第2配線配置於基板之背面,經由導通孔與第1配線電性連接。第3配線被覆凹部之內壁,與第2配線電性連接。第1配線、第2配線及第3配線可以銅、鐵、鎳、鎢、鉻、鋁、銀、金、鈦、鈀、銠或該等之合金形成。該等金屬或合金可為單層亦可為多層。尤其由散熱性之觀點而言,較佳為銅或銅合金。又,由導電性接著構件之濡濕性及/或光反射性等觀點而言,亦可於第1配線及/或第2配線之表層,設置銀、鉑、鋁、銠、金或該等之合金等層。(
(導通孔15)
導通孔15係設置於貫通基材11之正面與背面之孔內,將第1配線及上述第2配線電性連接之構件。導通孔15亦可由被覆基材之貫通孔的表面之第4配線151、填充於第4配線151內之填充構件152構成。可對第4配線151使用與第1配線、第2配線及第3配線相同之導電性構件。對填充構件152,可使用導電性構件,亦可使用絕緣性構件。(via 15)
The via
(絕緣膜18)
絕緣膜18係謀求確保背面之絕緣性及防止短路之構件。絕緣膜可以該領域中使用之任一者形成。例如,舉出熱硬化性樹脂或熱塑性樹脂等。(insulating film 18)
The insulating
(發光元件20)
發光元件20係藉由施加電壓而自身發光之半導體元件,可應用由氮化物半導體等構成之已知的半導體元件。作為發光元件20,舉出例如LED晶片。發光元件20至少具備半導體積層體23,於多數情況下進而具備基板24。發光元件之俯視形狀較佳為矩形,尤佳為正方形狀或於一方向較長之長方形狀,但亦可為其他形狀,例如若為六角形狀則亦可提高發光效率。發光元件之側面可相對於上表面垂直,亦可於內側或外側傾斜。又,發光元件具有正負電極。正負電極可以金、銀、錫、鉑、銠、鈦、鋁、鎢、鈀、鎳或該等之合金構成。發光元件之發光峰值波長可根據半導體材料及其混晶比,自紫外域至紅外域選擇。作為半導體材料,較佳為使用可發出效率良好地激發波長轉換粒子之短波長之光之材料,即氮化物半導體。氮化物半導體主要以一般式Inx
Aly
Ga1-x-y
N(0≦x、0≦y、x+y≦1)表示。發光元件之發光峰值波長由發光效率、以及波長轉換粒子之激發及其發光與混色關係等觀點而言,較佳為400 nm以上530 nm以下,更佳為420 nm以上490 nm以下,尤佳為450 nm以上470 nm以下。此外,亦可使用InAlGaAs系半導體、InAlGaP系半導體、硫化鋅、硒化鋅、碳化矽等。發光元件之元件基板主要係可成長構成半導體積層體之半導體結晶之結晶成長用基板,但亦可為接合於與結晶成長用基板分離之半導體元件構造之接合用基板。藉由元件基板具有透光性,易採用覆晶安裝,且易提高光之取出效率。作為元件基板之母材,舉出藍寶石、氮化鎵、氮化鋁、矽、二氧化矽、砷化鎵、磷化鎵、磷化銦、硫化鋅、氧化鋅、硒化鋅、金剛石等。其中較佳為藍寶石。元件基板之厚度可適當選擇,例如為0.02 mm以上1 mm以下,由元件基板之強度及/或發光裝置之厚度之觀點而言,較佳為0.05 mm以上0.3 mm以下。(Light-emitting element 20 ) The light-emitting
(透光性構件30)
透光性構件係設置於發光元件上且保護發光元件之構件。透光性構件至少由如下之母材構成。又,透光性構件於母材中含有如下之波長轉換粒子32,從而可作為波長轉換粒子發揮功能。透光性構件之各層之母材如下構成。各層之母材可相同,亦可不同。透光性構件無需具有波長轉換粒子。又,透光性構件亦可使用波長轉換粒子與例如鋁等無機物之燒結體,或波長轉換粒子之板狀結晶等。(translucent member 30)
The light-transmitting member is a member arranged on the light-emitting element and protecting the light-emitting element. The translucent member is composed of at least the following base materials. In addition, the light-transmitting member can function as wavelength converting particles by including the following
(透光性構件之母材31)
透光性構件之母材31只要為相對於自發光元件發出之光具有透光性者即可。另,所謂「透光性」是指發光元件之發光峰值波長之光透過率較佳為60%以上,更佳為70%以上,尤佳為80%以上。透光性構件之母材可使用矽酮樹脂、環氧樹脂、苯酚樹脂、聚碳酸酯樹脂、丙烯酸樹脂或該等之改性樹脂。亦可為玻璃。其中,矽酮樹脂及改性矽酮樹脂之耐熱性及耐光性優良而較佳。作為具體之矽酮樹脂,舉出聚二甲矽酮樹脂、苯基-甲基矽酮樹脂、二苯基矽酮樹脂。透光性構件可以單層積層該等母材中之1種,或積層該等母材中之2種以上而構成。另,本說明書之「改性樹脂」係包含混合樹脂者。又,所謂透光性構件之母材,亦包含第1透光層、波長轉換層、第2透光層之母材。(
透光性構件之母材亦可於上述樹脂或玻璃中含有各種擴散粒子。作為擴散粒子,舉出氧化矽、氧化鋁、氧化鋯、氧化鋅等。擴散粒子可單獨使用該等中之1種,或組合該等中之2種以上使用。尤其,較佳為熱膨脹係數較小之氧化矽。又,作為擴散粒子,使用奈米粒子,從而亦可增大發光元件發出之光之散射,減低波長轉換粒子之使用量。另,奈米粒子是指粒徑為1 nm以上100 nm以下之粒子。又,本說明書之「粒徑」例如以D50 定義。The base material of the translucent member may contain various diffusion particles in the above-mentioned resin or glass. Examples of the diffusion particles include silicon oxide, aluminum oxide, zirconium oxide, zinc oxide, and the like. The diffusion particles may be used alone or in combination of two or more of them. In particular, silicon oxide having a small coefficient of thermal expansion is preferable. Also, by using nanoparticles as the diffusing particles, it is also possible to increase the scattering of light emitted from the light-emitting element and reduce the amount of wavelength conversion particles used. In addition, nanoparticles refer to particles with a particle diameter of 1 nm to 100 nm. In addition, the "particle diameter" in this specification is defined by D50 , for example.
(波長轉換粒子32) 波長轉換粒子吸收發光元件發出之一次光之至少一部分,而發出與一次光不同波長之二次光。波長轉換粒子可單獨使用以下所示之具體例中之1種,或組合2種以上使用。(wavelength conversion particle 32) The wavelength conversion particle absorbs at least a part of the primary light emitted by the light-emitting element, and emits secondary light of a different wavelength from the primary light. The wavelength converting particles may be used alone or in combination of two or more of the specific examples shown below.
作為綠色發光之波長轉換粒子,舉出釔-鋁-石榴石系螢光體(例如Y3
(Al,Ga)5
O12
:Ce)、鎦-鋁-石榴石系螢光體(例如Lu3
(Al,Ga)5
O12
:Ce)、鋱-鋁-石榴石系螢光體(例如Tb3
(Al,Ga)5
O12
:Ce)、矽酸鹽系螢光體(例如(Ba,Sr)2
SiO4
:Eu)、氯矽酸鹽系螢光體(例如Ca8
Mg(SiO4
)4
Cl2
:Eu)、β賽隆系螢光體(例如Si6-z
Alz
Oz
N8-z
:Eu(0<z<4.2))、SGS系螢光體(例如SrGa2
S4
:Eu)、鹼土類鋁酸鹽矽螢光體(例如(Ba,Sr,Ca)Mgx
Al10
O16+x
:Eu,Mu(惟0≦x≦1))等。作為黃色發光之波長轉換粒子,舉出α塞隆系螢光體(例如Mz
(Si,Al)12
(O,N)16
(惟0<z≦2,M係Li、Mg、Ca、Y及除La與Ce以外之稀土元素)等。此外,上述綠色發光之波長轉換粒子中亦有黃色發光之波長轉換粒子。又,例如釔-鋁-石榴石系螢光體可藉由以Gd置換Y之一部分而使發光峰值波長轉移至長波長側,可發出黃光。又,該等之中,亦有可發出橙光之波長轉換粒子。作為紅色發光之波長轉換粒子,舉出含氮之鋁矽酸鈣(CASN或SCASN)系螢光體(例如(Sr,Ca)AlSiN3
:Eu)等。此外,舉出錳激活氟化物系螢光體(以一般式(I)A2
[M1-a
Mna
F6
]表示之螢光體(惟上述一般式(I)中,A係選自由K、Li、Na、Rb、Cs及NH4
所組成之群中之至少1種,M係選自由第4族元素及第14族元素所組成之群中之至少1種元素,a滿足0<a<0.2))。作為該錳激活氟化物系螢光體之代表例,有錳激活氟矽酸鉀之螢光體(例如K2
SiF6
:Mn)。Examples of wavelength conversion particles that emit green light include yttrium-aluminum-garnet phosphors (such as Y 3 (Al,Ga) 5 O 12 : Ce), lutetium-aluminum-garnet phosphors (such as Lu 3 (Al,Ga) 5 O 12 : Ce), Si-Al-Garnet-based phosphors (such as Tb 3 (Al,Ga) 5 O 12 : Ce), silicate-based phosphors (such as (Ba, Sr) 2 SiO 4 :Eu), chlorosilicate phosphors (such as Ca 8 Mg(SiO 4 ) 4 Cl 2 :Eu), β-sialon phosphors (such as Si 6-z Al z O z N 8-z : Eu (0<z<4.2)), SGS phosphors (such as SrGa 2 S 4 : Eu), alkaline earth aluminate silicon phosphors (such as (Ba, Sr, Ca) Mg x Al 10 O 16+x : Eu, Mu (only 0≦x≦1)), etc. As wavelength conversion particles that emit yellow light, α-sialon-based phosphors (such as M z (Si, Al) 12 (O, N) 16 (provided that 0<z≦2, M is Li, Mg, Ca, Y and rare earth elements other than La and Ce), etc. In addition, there are also yellow-emitting wavelength-converting particles among the above-mentioned green-emitting wavelength-converting particles. Also, for example, yttrium-aluminum-garnet-based phosphors can be replaced by Gd A part of Y shifts the luminous peak wavelength to the long wavelength side, and can emit yellow light. In addition, among these, there are also wavelength conversion particles that can emit orange light. As wavelength conversion particles that emit red light, nitrogen-containing Calcium aluminosilicate (CASN or SCASN) phosphors (such as (Sr, Ca)AlSiN 3 :Eu), etc. In addition, manganese-activated fluoride-based phosphors (general formula (I) A 2 [M 1-a Phosphor represented by Mn a F 6 ] (but in the above general formula (I), A is at least one selected from the group consisting of K, Li, Na, Rb, Cs and NH 4 , M It is at least one element selected from the group consisting of Group 4 elements and
(反射構件(第1反射構件、第2反射構件及/或第3反射構件)) 所謂反射構件是指第1反射構件、第2反射構件及/或第3反射構件。由反射構件朝Z方向之光取出效率之觀點而言,發光元件之發光峰值波長之光反射率較佳為70%以上,更佳為80%以上,尤佳為90%以上。再者,反射構件較佳為白色。因此,反射構件較佳於母材中含有白色顏料。反射構件於硬化前經歷液狀之狀態。反射構件可藉由轉注成形、射出成形、壓縮成形、灌注等而形成。發光裝置具備第1反射構件、第2反射構件及/或第3反射構件之情形時,例如亦可藉由描繪而形成第3反射構件,藉由灌注而形成第1反射構件及第2反射構件。(reflecting member (first reflecting member, second reflecting member and/or third reflecting member)) The reflection member refers to a first reflection member, a second reflection member, and/or a third reflection member. From the viewpoint of the light extraction efficiency of the reflective member in the Z direction, the light reflectance of the light emission peak wavelength of the light emitting element is preferably 70% or more, more preferably 80% or more, and most preferably 90% or more. Furthermore, the reflective member is preferably white. Therefore, it is preferable that a white pigment is contained in a reflective member rather than a base material. The reflective member undergoes a liquid state before hardening. The reflective member can be formed by transfer molding, injection molding, compression molding, infusion, and the like. When the light-emitting device is provided with the first reflective member, the second reflective member, and/or the third reflective member, for example, the third reflective member may be formed by drawing, and the first reflective member and the second reflective member may be formed by potting. .
(反射構件之母材) 反射構件之母材可使用樹脂,舉出例如矽酮樹脂、環氧樹脂、苯酚樹脂、聚碳酸酯樹脂、丙烯酸樹脂或該等之改性樹脂。其中又以矽酮樹脂及改性矽酮樹脂耐熱性及耐光性優良,故而較佳。作為具體之矽酮樹脂,舉出聚二甲矽酮樹脂、苯基-甲基矽酮樹脂、二苯基矽酮樹脂。(base material of reflective member) Resin can be used as the base material of the reflective member, for example, silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, or modified resins thereof. Among them, silicone resin and modified silicone resin have excellent heat resistance and light resistance, so they are preferable. Specific silicone resins include dimethicone resins, phenyl-methyl silicone resins, and diphenyl silicone resins.
(白色顏料) 白色顏料可單獨使用氧化鈦、氧化鋅、氧化鎂、碳酸鎂、氫氧化鎂、碳酸鈣、氫氧化鈣、矽酸鈣、矽酸鎂、鈦酸鋇、硫酸鋇、氫氧化鋁、氧化鋁、氧化鋯、氧化矽中之1種,或組合該等中之2種以上使用。白色顏料之形狀可適當選擇,可為不定形或破碎狀,由流動性之觀點而言較佳為球狀。又,白色顏料之粒徑舉出例如1 μm以上0.5 μm以下左右,但為提高光反射或被覆之效果則愈小愈佳。光反射性反射構件中白色顏料之含有量可適當選擇,但由光反射性及液狀時之黏度等觀點而言,較佳例如為10 wt%以上80 wt%以下,更佳為20 wt%以上70 wt%以下,尤佳為30 wt%以上60 wt%以下。另,「wt%」係重量百分比,表示該材料之重量相對於光反射性反射構件之總重量之比例。(white pigment) White pigments can be used alone titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, One of zirconia and silicon oxide, or a combination of two or more of them. The shape of the white pigment can be appropriately selected, and may be amorphous or broken, but spherical is preferred from the viewpoint of fluidity. In addition, the particle size of the white pigment is, for example, about 1 μm to 0.5 μm, but the smaller the better, the better to enhance the light reflection or coating effect. The content of the white pigment in the light-reflective reflective member can be appropriately selected, but from the viewpoints of light reflectivity and liquid viscosity, for example, it is preferably 10 wt% to 80 wt%, more preferably 20 wt% More than 70 wt%, preferably more than 30 wt% and less than 60 wt%. In addition, "wt%" means percentage by weight, and represents the ratio of the weight of the said material with respect to the total weight of a light reflective reflection member.
(被覆構件31D)
被覆構件被覆發光元件之光取出面,使發光元件之光擴散,或改變成與發光元件之峰值波長之光不同峰值波長之光。(covering
(被覆構件之母材) 被覆構件之母材可使用與透光性構件之母材相同之材料。(The base material of the covered member) The same material as the base material of the translucent member can be used for the base material of the covering member.
(被覆構件之擴散粒子) 被覆構件之擴散粒子可使用與透光性構件之擴散粒子相同之材料。(Diffused Particles of Coated Components) The diffusing particles of the covering member can be made of the same material as that of the diffusing particles of the translucent member.
(導光構件50) 導光構件係將發光元件及透光性構件接著,將來自發光元件之光朝透光性構件導光之構件。導光構件之母材可使用矽酮樹脂、環氧樹脂、苯酚樹脂、聚碳酸酯樹脂、丙烯酸樹脂或該等之改性樹脂。其中又以矽酮樹脂及改性矽酮樹脂因耐熱性及耐光性優良,故而較佳。作為具體之矽酮樹脂,舉出聚二甲矽酮樹脂、苯基-甲基矽酮樹脂、二苯基矽酮樹脂。又,導光構件之母材亦可含有與上述透光性構件相同之填料及/或波長轉換粒子。又,導光構件可省略。(light guide member 50) The light guide member is a member that connects a light-emitting element and a light-transmitting member, and guides light from the light-emitting element toward the light-transmitting member. The base material of the light guide member can use silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin or the modified resins. Among them, silicone resin and modified silicone resin are preferable because of their excellent heat resistance and light resistance. Specific silicone resins include dimethicone resins, phenyl-methyl silicone resins, and diphenyl silicone resins. In addition, the base material of the light guide member may contain the same filler and/or wavelength conversion particles as those of the above-mentioned light-transmitting member. Also, the light guide member may be omitted.
(導電性接著構件60) 所謂導電性接著構件係將發光元件之電極與第1配線電性連接之構件。作為導電性接著構件,可使用金、銀、銅等凸塊、含有銀、金、銅、鉑、鋁、鈀等之金屬粉末及樹脂黏合劑之金屬漿、錫-鉍系、錫-銅系、錫-銀系、金-錫系等焊料、低熔點金屬等之焊料中之任一者。 [產業上之可利用性](conductive bonding member 60) The so-called conductive bonding member is a member that electrically connects the electrodes of the light emitting element and the first wiring. As the conductive bonding member, bumps of gold, silver, copper, etc., metal paste containing silver, gold, copper, platinum, aluminum, palladium, etc. metal powder and resin binder, tin-bismuth system, tin-copper system can be used , tin-silver series, gold-tin series solders, solders of low-melting point metals, etc. [Industrial availability]
本發明之一實施形態之發光裝置可利用於液晶顯示器之背光裝置、各種照明器具、大型顯示器、廣告或目的地導覽等各種顯示裝置、投影機裝置,乃至於數位攝影機、傳真、影印機、掃描器等中之圖像讀取裝置等。The light-emitting device of one embodiment of the present invention can be used in various display devices such as backlight devices of liquid crystal displays, various lighting appliances, large displays, advertisements or destination guides, projector devices, and even digital cameras, facsimiles, photocopiers, Image reading devices in scanners, etc.
10‧‧‧基板 11‧‧‧基材 11C‧‧‧中心線 12‧‧‧第1配線 12A‧‧‧配線主部 12B‧‧‧鍍覆 13‧‧‧第2配線 14‧‧‧第3配線 15‧‧‧導通孔 15A、15B‧‧‧導通孔 16‧‧‧凹部 16A‧‧‧中央凹部 16B‧‧‧端部凹部 18‧‧‧絕緣膜 20‧‧‧發光元件 20A‧‧‧第1發光元件 20B‧‧‧第2發光元件 20C‧‧‧第3發光元件 21、22‧‧‧正負電極 23‧‧‧半導體積層體 24‧‧‧元件基板 30‧‧‧透光性構件 30A‧‧‧第1透光性構件 31‧‧‧母材 31A‧‧‧第1透光層 31B‧‧‧波長轉換層 31C‧‧‧第2透光層 31D‧‧‧被覆構件 31E‧‧‧第1波長轉換層 31F‧‧‧第2波長轉換層 32‧‧‧波長轉換粒子 33‧‧‧層 33A、33B‧‧‧層 40‧‧‧第1反射構件 41‧‧‧第2反射構件 42‧‧‧第3反射構件 50‧‧‧導光構件 60‧‧‧導電性接著構件 105‧‧‧側面 111‧‧‧正面 111A‧‧‧凹部 112‧‧‧背面 113‧‧‧底面 114‧‧‧上表面 120A‧‧‧含磷之鍍鎳 120B‧‧‧鍍金 120C‧‧‧鍍鎳 120D‧‧‧鍍鈀 120E‧‧‧第1鍍金 120F‧‧‧第2鍍金 121‧‧‧凸部 123‧‧‧配線延伸部 151‧‧‧第4配線 152‧‧‧填充構件 161‧‧‧平行部 162‧‧‧傾斜部 201‧‧‧光取出面 201A‧‧‧光取出面 201B‧‧‧光取出面 202‧‧‧側面 202A‧‧‧側面 202B‧‧‧側面 203‧‧‧電極形成面 203A‧‧‧電極形成面 203B‧‧‧電極形成面 203C‧‧‧電極形成面 311A‧‧‧第2擴散粒子 311C‧‧‧第2擴散粒子 311D‧‧‧擴散粒子 311E‧‧‧第1波長轉換粒子 311F‧‧‧第2波長轉換粒子 312A‧‧‧母材 312B‧‧‧母材 312C‧‧‧母材 312E‧‧‧母材 312F‧‧‧母材 403‧‧‧側面 404‧‧‧側面 405‧‧‧側面 1000、1000A、2000、2000A~2000H、3000、3000A~3000D、4000‧‧‧發光裝置 2011A‧‧‧短邊 2011B‧‧‧短邊 2011C‧‧‧短邊 2012B‧‧‧短邊 D2‧‧‧凹部16中央之深度 D3‧‧‧Z方向之基材厚度 D4‧‧‧窄幅部之Y方向之長度 D5‧‧‧寬幅部之Y方向之長度 L1‧‧‧基材長度 L2‧‧‧Y方向之第1配線之長度 W1、W2‧‧‧基材厚度 W3、W4‧‧‧凹部深度 θ‧‧‧ 傾斜角度 10‧‧‧substrate 11‧‧‧Substrate 11C‧‧‧central line 12‧‧‧1st wiring 12A‧‧‧wiring main part 12B‧‧‧plating 13‧‧‧Second wiring 14‧‧‧3rd wiring 15‧‧‧via hole 15A, 15B‧‧‧via hole 16‧‧‧Concave 16A‧‧‧Central concave 16B‧‧‧End recess 18‧‧‧Insulation film 20‧‧‧Light-emitting components 20A‧‧‧1st light-emitting element 20B‧‧‧The second light-emitting element 20C‧‧‧The third light-emitting element 21, 22‧‧‧positive and negative electrodes 23‧‧‧Semiconductor laminate 24‧‧‧Component substrate 30‧‧‧Light-transmitting components 30A‧‧‧First light-transmitting member 31‧‧‧parent material 31A‧‧‧The first transparent layer 31B‧‧‧wavelength conversion layer 31C‧‧‧Second transparent layer 31D‧‧‧Covered components 31E‧‧‧The first wavelength conversion layer 31F‧‧‧2nd wavelength conversion layer 32‧‧‧wavelength conversion particles 33‧‧‧layer 33A, 33B‧‧‧floor 40‧‧‧The first reflection member 41‧‧‧The second reflection member 42‧‧‧The third reflection member 50‧‧‧light guide member 60‧‧‧Conductive bonding member 105‧‧‧side 111‧‧‧Front 111A‧‧‧Concave 112‧‧‧back 113‧‧‧bottom surface 114‧‧‧upper surface 120A‧‧‧Phosphorus-containing nickel plating 120B‧‧‧gold plating 120C‧‧‧nickel plating 120D‧‧‧Palladium plating 120E‧‧‧1st gold plating 120F‧‧‧Second Gold Plating 121‧‧‧convex part 123‧‧‧Wiring extension 151‧‧‧4th wiring 152‧‧‧filling components 161‧‧‧Parallel Department 162‧‧‧Inclined part 201‧‧‧light extraction surface 201A‧‧‧light extraction surface 201B‧‧‧light extraction surface 202‧‧‧side 202A‧‧‧side 202B‧‧‧side 203‧‧‧Electrode formation surface 203A‧‧‧electrode forming surface 203B‧‧‧electrode formation surface 203C‧‧‧electrode forming surface 311A‧‧‧Second Diffused Particles 311C‧‧‧Second Diffused Particles 311D‧‧‧diffusion particles 311E‧‧‧First wavelength conversion particle 311F‧‧‧Second wavelength conversion particles 312A‧‧‧base metal 312B‧‧‧base metal 312C‧‧‧base metal 312E‧‧‧base metal 312F‧‧‧base metal 403‧‧‧side 404‧‧‧side 405‧‧‧side 1000, 1000A, 2000, 2000A~2000H, 3000, 3000A~3000D, 4000‧‧‧luminescent device 2011A‧‧‧Short side 2011B‧‧‧Short side 2011C‧‧‧Short side 2012B‧‧‧Short side D2‧‧‧The depth of the center of the concave part 16 D3‧‧‧Substrate thickness in Z direction D4‧‧‧The length of the narrow part in the Y direction D5‧‧‧The length of the Y direction of the wide part L1‧‧‧Substrate Length L2‧‧‧Length of the first wiring in the Y direction W1, W2‧‧‧Substrate thickness W3, W4‧‧‧Deep of concave part θ‧‧‧ Tilt angle
圖1A係實施形態1之發光裝置之概略立體圖。
圖1B係實施形態1之發光裝置之概略立體圖。
圖1C係實施形態1之發光裝置之概略前視圖。
圖2A係圖1C之2A-2A線之概略剖視圖。
圖2B係圖1C之2B-2B線之概略剖視圖。
圖3係實施形態1之發光裝置之概略後視圖。
圖4A係實施形態1之基材、導通孔及第3配線之概略立體圖。
圖4B係實施形態1之基材、導通孔及第3配線之概略立體圖。
圖4C係實施形態1之基材、導通孔及第3配線之概略立體圖。
圖5係實施形態1之發光裝置之概略仰視圖。
圖6A係實施形態1之發光裝置之概略剖視圖,及將虛線部內放大顯示之放大圖。
圖6B係實施形態1之發光裝置之變化例之概略剖視圖,及將虛線部內放大顯示之放大圖。
圖7A係實施形態1之基板之概略前視圖。
圖7B係實施形態1之基板之變化例之概略前視圖。
圖7C係實施形態1之基板之變化例之概略前視圖。
圖8係實施形態1之發光裝置之概略右側視圖。
圖9A係實施形態2之發光裝置之概略立體圖。
圖9B係實施形態2之發光裝置之概略立體圖。
圖9C係實施形態2之發光裝置之概略前視圖。
圖9D係實施形態2之發光裝置之概略仰視圖。
圖10係圖9C之10A-10A線之概略剖視圖。
圖11係實施形態2之發光裝置之概略後視圖。
圖12A係實施形態2之發光裝置之變化例之概略立體圖。
圖12B係實施形態2之發光裝置之變化例之概略剖視圖。
圖12C係實施形態2之發光裝置之變化例之概略剖視圖。
圖12D係實施形態2之發光裝置之變化例之概略後視圖。
圖12E係實施形態2之發光裝置之變化例之概略剖視圖。
圖12F係實施形態2之發光裝置之變化例之概略剖視圖。
圖12G係實施形態2之發光裝置之變化例之概略剖視圖。
圖12H係實施形態2之發光裝置之變化例之概略剖視圖。
圖12I係實施形態2之發光裝置之變化例之概略剖視圖。
圖12J係實施形態2之發光裝置之變化例之概略剖視圖。
圖12K係實施形態2之基板之概略前視圖。
圖13A係實施形態3之發光裝置之概略立體圖。
圖13B係實施形態3之發光裝置之概略立體圖。
圖13C係實施形態3之發光裝置之概略前視圖。
圖14A係圖13C之14A-14A線之概略剖視圖。
圖14B係實施形態3之發光裝置之變化例之概略剖視圖。
圖14C係實施形態3之發光裝置之變化例之概略剖視圖。
圖15係實施形態3之發光裝置之概略後視圖。
圖16係實施形態3之發光裝置之概略仰視圖。
圖17A係實施形態3之基板、第1發光元件、第2發光元件及第3發光元件之概略前視圖。
圖17B係實施形態3之基板、第1發光元件、第2發光元件及第3發光元件之變化例之概略前視圖。
圖17C係實施形態3之基板、第1發光元件、第2發光元件及第3發光元件之變化例之概略前視圖。
圖18A係實施形態3之發光裝置之變化例之概略剖視圖。
圖18B係實施形態3之發光裝置之變化例之概略剖視圖。
圖19係實施形態4之發光裝置之變化例之概略剖視圖。Fig. 1A is a schematic perspective view of a light emitting device according to the first embodiment.
Fig. 1B is a schematic perspective view of the light emitting device of the first embodiment.
Fig. 1C is a schematic front view of the light emitting device of the first embodiment.
Fig. 2A is a schematic cross-sectional view of
10‧‧‧基板 10‧‧‧substrate
11‧‧‧基材 11‧‧‧Substrate
12‧‧‧第1配線 12‧‧‧1st wiring
13‧‧‧第2配線 13‧‧‧Second wiring
14‧‧‧第3配線 14‧‧‧3rd wiring
15‧‧‧導通孔 15‧‧‧via hole
16‧‧‧凹部 16‧‧‧Concave
20‧‧‧發光元件 20‧‧‧Light-emitting components
21、22‧‧‧正負電極 21, 22‧‧‧positive and negative electrodes
23‧‧‧半導體積層體 23‧‧‧Semiconductor laminate
24‧‧‧元件基板 24‧‧‧Component substrate
30‧‧‧透光性構件 30‧‧‧Light-transmitting components
31‧‧‧母材 31‧‧‧parent material
32‧‧‧波長轉換粒子 32‧‧‧wavelength conversion particles
33‧‧‧層 33‧‧‧layer
40‧‧‧第1反射構件 40‧‧‧The first reflection member
50‧‧‧導光構件 50‧‧‧light guide member
60‧‧‧導電性接著構件 60‧‧‧Conductive bonding member
111‧‧‧正面 111‧‧‧Front
112‧‧‧背面 112‧‧‧back
121‧‧‧凸部 121‧‧‧convex part
151‧‧‧第4配線 151‧‧‧4th wiring
152‧‧‧填充構件 152‧‧‧filling components
201‧‧‧光取出面 201‧‧‧light extraction surface
202‧‧‧側面 202‧‧‧side
203‧‧‧電極形成面 203‧‧‧Electrode formation surface
1000‧‧‧發光裝置 1000‧‧‧luminous devices
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