TW202329489A - Light emitting device - Google Patents

Abstract

A light emitting device includes a substrate including a base member including a front surface, a rear surface opposite to the front surface, a bottom surface adjacent to, and perpendicular to, the front surface, and a top surface opposite to the bottom surface, a first wiring portion located on the front surface, and a second wiring portion located on the rear surface; at least one light emitting element electrically connected with, and placed on, the first wiring portion; and a first reflective member covering a lateral surface of the light emitting element and the front surface of the substrate. The base member has at least one recessed portion opened on the rear surface and the bottom surface. The substrate includes a third wiring portion covering an inner wall of the recessed portion and electrically connected with the second wiring portion, and a via in contact with the first wiring portion, the second wiring portion and the third wiring portion.

Description

light emitting device

The present invention relates to a light emitting device.

A light-emitting device is known, which has a concave electrode electrically connected to an electrode pattern through a through hole, and electrically connects the concave electrode to the electrode of the motherboard by solder, so that it can be mounted on the motherboard (for example, refer to Patent Document 1) . [Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2012-124191

[Problem to be solved by the invention]

Since the amount of heat generated increases with higher output of light-emitting elements (LED elements), light-emitting devices with high heat dissipation are required. Therefore, the embodiment of the present invention aims to provide a light-emitting device with high heat dissipation. [Technical means to solve the problem]

A light-emitting device according to an aspect of the present invention includes: a substrate having a front surface extending in a first direction that is a long side direction and a second direction that is a short side direction, a back surface that is located on the opposite side of the front surface, adjacent to the front surface, and The bottom surface orthogonal to the above-mentioned front surface, and the base material on the upper surface opposite to the above-mentioned bottom surface, the first wiring arranged on the above-mentioned front surface, and the second wiring arranged on the above-mentioned back surface; at least one light-emitting element, which is connected to the above-mentioned The first wiring is electrically connected and placed on the first wiring; and the first reflection member covers the side surface of the light emitting element and the front surface of the substrate, and the base material has at least one opening on the back surface and the bottom surface The recess, the substrate having a third wiring covering the inner wall of the recess and electrically connected to the second wiring, and a via hole connected to the first wiring, the second wiring, and the third wiring. [Effect of Invention]

According to the light-emitting device according to the embodiment of the present invention, a light-emitting device with high heat dissipation can be provided.

Embodiments of the invention will be described below with reference to the drawings as appropriate. However, the light-emitting device described below is used to embody the technical idea of the present invention, and unless otherwise specified, the present invention is not limited to the following. In addition, the content described in one embodiment can also be applied to other embodiments and modifications. In addition, for the sake of clarity, the size and positional relationship of components shown in the drawings may be exaggerated.

＜Embodiment 1＞ A light emitting device 1000 according to an embodiment of the present invention will be described based on FIGS. 1A to 8B . The light emitting device 1000 includes a substrate 10 , at least one light emitting element 20 , and a first reflection member 40 . The substrate 10 includes a base material 11 , first wiring 12 , second wiring 13 , third wiring 14 , and via holes 15 . The base material 11 has a front 111 extending in the longitudinal direction, that is, the first direction, and a short side direction, that is, the second direction, a back 112 located on the opposite side of the front, a bottom surface 113 adjacent to the front 111 and perpendicular to the front 111, and a The upper surface 114 on the opposite side of the bottom surface 113 . The base material 11 further has at least one recess 16 . The first wiring 12 is disposed on the front surface 111 of the substrate 11 . The second wiring 13 is arranged on the back surface 112 of the substrate 11 . The light emitting element 20 is electrically connected to the first wiring 12 and placed on the first wiring 12 . The first reflective member 40 covers the side surface 202 of the light emitting element 20 and the front surface 111 of the substrate. At least one recess is opened on the back surface 112 and the bottom surface 113 . The third wiring 14 covers the inner wall of the recess and is electrically connected to the second wiring. The via holes 15 are in contact with the first wiring 12 , the second wiring 13 , and the third wiring 14 . The via hole 15 electrically connects the first wiring 12 , the second wiring 13 and the third wiring 14 . Moreover, the via hole 15 penetrates from the front surface 111 of the substrate 11 to the back surface 112 . In addition, the term "orthogonal" in this specification means 90±3°.

The via holes 15 are in contact with the first wiring 12 , the second wiring 13 , and the third wiring 14 . Thereby, since the heat from the light emitting element can be transmitted from the first wiring 12 to the second wiring 13 and/or the third wiring 14 through the via hole 15, the heat dissipation of the light emitting device 1000 can be improved. When the via hole 15 is in contact with the second wiring 13 and the third wiring 14 , as shown in FIG. 3 , the via hole 15 overlaps the second wiring 13 and the third wiring 14 in a rear view. In addition, when the substrate has a plurality of via holes, all of the plurality of via holes may be in contact with the first wiring, the second wiring, and the third wiring, or not all of the plurality of via holes may be connected to the first wiring, the second wiring, etc. The wiring and the 3rd wiring are connected. For example, when the substrate has a plurality of via holes, one via hole may be connected to the first wiring, the second wiring, and the third wiring, and the other via hole may be connected to the first wiring and the second wiring, and connected to the second wiring. 3 wiring left. By connecting some via holes among the plurality of via holes to the first wiring, the second wiring, and the third wiring, heat dissipation of the light emitting device can be improved. The via hole 15 is preferably circular in rear view. Thereby, it can be easily formed by a drill or the like. When the via hole 15 is circular in rear view, the diameter of the via hole is preferably not less than 100 μm and not more than 150 μm. When the diameter of the via hole is 100 μm or more, the heat dissipation of the light-emitting device is improved, and when the diameter of the via hole is 150 μm or less, the decrease in the strength of the substrate is reduced. In this specification, the circular shape includes not only a perfect circle but also a shape close to it (for example, an elliptical shape or a shape in which four corners of a quadrangular shape are greatly chamfered into an arc shape). When viewed from the rear, it is preferable that the overlapping area of the via hole and the second wiring 13 is larger than the overlapping area of the via hole and the third wiring 14 . Thereby, the volume of the via hole can be increased, so the heat dissipation of the light emitting device is improved. Also, it is preferable that the via hole is located at the center of the substrate in the Y direction. Thereby, in the thickness of the base material from the end of the via hole to the end of the base material in the Y direction, the part where the thickness of the base material becomes thinner can be reduced, so the strength of the base material can be improved.

As shown in FIGS. 4A to 4C , the via hole 15 has a portion D1 where the via hole 15 is in contact with the third wiring 14 in the front direction (Z direction) from the back. Thereby, not only the via hole 15 and the third wiring 14 are in contact with each other in the X direction and the Y direction, but also the via hole 15 and the third wiring 14 are in contact with each other in the front direction (Z direction) from the back surface, so that the size can be increased. The contact area between the via hole 15 and the third wiring 14 . Thereby, since the heat from the light emitting element is easily transmitted from the first wiring 12 to the third wiring 14 through the via hole 15, the heat dissipation of the light emitting device 1000 can be improved. In addition, in this specification, the front direction from the back is also called Z direction.

The light emitting device 1000 can be fixed to the mounting substrate by a bonding member such as solder formed in the concave portion 16 . The third wiring covering the inner wall of the concave portion 16 may be subjected to a force due to thermal expansion of the joining member or the like. Since the via hole 15 has a portion D1 where the via hole 15 contacts the third wiring 14 in the Z direction, the bonding strength between the via hole 15 and the third wiring 14 is improved. Thereby, even if the force from a bonding member etc. is applied to a 3rd wiring, peeling of the 3rd wiring 14 from the base material 11 can be suppressed.

The via hole 15 can also be formed by filling the through hole of the base material with a conductive material. As shown in FIG. Filling member 152 of the area surrounded by 151. The filling member 152 may be conductive or insulating. It is preferable to use a resin material for the filling member 152 . Generally speaking, since the fluidity of the resin material before hardening is higher than that of the metal material before hardening, it is easy to fill in the fourth wiring 151 . Therefore, by using a resin material for a filling member, manufacture of a board|substrate becomes easy. As a resin material which is easy to fill, an epoxy resin is mentioned, for example. In the case of using a resin material as the filling member, it is preferable to include an additive member in order to reduce the coefficient of linear expansion. In this way, since the difference in the coefficient of linear expansion with the fourth wiring is reduced, it is possible to suppress generation of a gap between the fourth wiring and the filling member due to heat from the light emitting element. As an additive member, silicon oxide is mentioned, for example. In addition, when a metal material is used for the filling member 152, heat dissipation can be improved. Also, when the via hole 15 is formed by filling the through hole of the base material with a conductive material, it is preferable to use a metal material such as Ag or Cu with high thermal conductivity.

The number of recesses included in the substrate may be one or plural. By having a plurality of recesses, the bonding strength between the light emitting device 1000 and the mounting substrate can be improved. The depth of the concave portion may be the same on the upper surface side and the bottom surface side, or may be deeper on the bottom surface side than on the upper surface side. As shown in Figure 2B, because the depth of the concave portion 16 on the Z direction is deeper on the bottom surface side than on the upper surface side, the thickness W1 of the substrate on the upper surface side of the concave portion can be made thicker than that on the bottom surface side of the concave portion in the Z direction. Substrate thickness W2. Thereby, the strength reduction of a base material can be suppressed. Also, since the depth W3 of the recess on the bottom side is deeper than the depth W4 of the recess on the top side, the volume of the bonding member formed in the recess increases, thereby improving the bonding strength between the light emitting device 1000 and the mounting substrate. Whether the light-emitting device 1000 is a top emission type (front emission type) mounted with the back surface 112 of the base material 11 facing the mounting substrate or a side emission type (front emission type) mounted with the bottom surface 113 of the base material 11 facing the mounting substrate Side-emitting type), since the volume of the bonding member increases, the bonding strength with the mounting substrate can be improved.

The bonding strength between the light-emitting device 1000 and the mounting substrate can be improved especially in the case of the side-emitting type. Since the depth of the concave portion in the Z direction is deeper on the bottom side than on the upper surface side, the area of the opening of the concave portion on the bottom surface can be increased. Since the area of the opening of the recessed portion on the bottom surface facing the mounting substrate becomes larger, the area of the bonding member on the bottom surface can also be increased. Thereby, since the area of the bonding member located on the surface opposite to the mounting substrate can be increased, the bonding strength between the light emitting device 1000 and the mounting substrate can be improved.

The maximum depth of the concave portion in the Z direction is preferably 0.4 to 0.9 times the thickness of the substrate in the Z direction. Since the depth of the concave portion is 0.4 times deeper than the thickness of the substrate, the volume of the bonding member formed in the concave portion increases, thereby improving the bonding strength between the light emitting device and the mounting substrate. Since the depth of the concave portion is 0.9 times shallower than the thickness of the base material, it is possible to suppress the decrease in the strength of the base material.

As shown in FIG. 2B , the concave portion 16 preferably has a parallel portion 161 extending from the back surface 112 toward a direction (Z direction) parallel to the bottom surface 113 . By providing the parallel portion 161, the area of the portion D1 where the via hole is in contact with the third wiring can be increased in the Z direction, so that the heat dissipation of the light emitting device can be improved. Moreover, by providing the parallel portion 161, even if the area of the opening of the concave portion on the back surface is the same, the volume of the concave portion can be increased. By increasing the volume of the concave portion, the amount of bonding members such as solder that can be formed in the concave portion can be increased, so the bonding strength between the light emitting device 1000 and the mounting substrate can be improved. In addition, the term "parallel" in this specification means that an inclination of about ±3° is allowed. In addition, in a cross-sectional view, the concave portion 16 has an inclined portion 162 inclined from the bottom surface 113 toward the direction in which the thickness of the base material 11 becomes thicker. The inclined portion 162 can be straight or curved.

The maximum height of the concave portion in the Y direction is preferably 0.3 to 0.75 times the thickness of the base material in the Y direction. Since the depth of the concave portion in the Y direction is 0.3 times longer than the thickness of the substrate, the volume of the bonding member formed in the concave portion increases, so the bonding strength between the light emitting device and the mounting substrate can be improved. Since the length of the concave portion in the Y direction is 0.75 times shallower than the thickness of the base material, the strength reduction of the base material can be suppressed.

As shown in FIG. 3 , on the back side, the shape of the opening of the concave portion is preferably a semicircular shape. Since the opening shape of the concave portion is a semicircular shape without corners, the stress concentration on the concave portion can be suppressed, so the cracking of the base material can be suppressed. In this specification, the so-called semicircular shape is not limited to a perfect semicircle, but also includes shapes close to it (for example, an elliptical semicircular shape).

As shown in FIG. 3 , if there are plural recesses 16 on the rear surface, it is preferable to arrange them bilaterally symmetrically with respect to the center line 3C of the base material parallel to the second direction (Y direction). Thereby, when the light-emitting device is mounted on the mounting substrate via the bonding member, the automatic alignment effectively functions, and the light-emitting device can be mounted with high precision within the mounting range.

On the bottom surface, the depth of the concave portion in the Z direction may be substantially constant, or the depth of the concave portion may be different between the center and the end. As shown in FIG. 5 , on the bottom surface, the depth D2 at the center of the concave portion 16 is preferably the maximum depth of the concave portion in the Z direction. Thereby, on the bottom surface, the base material thickness D3 in the Z direction can be thickened at the end of the concave portion in the X direction, so the strength of the base material can be improved. In addition, the term "center" in this specification means that a variation of about 5 μm is allowed. The concave portion 16 can be formed by a well-known method such as a drill or a laser.

As shown in FIG. 5 , it is preferable that the first wiring 12 exposed from the first reflective member 40 on the outer side of the light-emitting device is located at any position on the left or right relative to the center line 5C of the substrate parallel to the second direction (Y direction). side. Thereby, the polarity of the light emitting device can be identified according to the position of the first wiring 12 exposed from the first reflective member 40 on the outer side of the light emitting device. Furthermore, it is preferable that the first wiring 12 exposed from the first reflective member 40 on the outer side of the light-emitting device is located on either side of the left and right sides with respect to the center line 5C of the base material parallel to the second direction (Y direction). The shape of the first wiring 12 located on the left side relative to the central line 5C and exposed from the first reflective member 40 to the outer side of the light-emitting device is the same as the shape of the first wiring 12 located on the right side relative to the central line 5C and exposed from the first reflective member 40 to the light-emitting device. The shape of the first wiring 12 on the outer surface is different. Thereby, the polarity of the light emitting device can be identified according to the shape 12 of the first wiring exposed from the first reflective member 40 on the outer side of the light emitting device.

As shown in FIG. 6A , the first wiring 12 , the second wiring 13 and/or the third wiring 14 may have a main wiring portion 12A and plating 12B formed on the main wiring portion 12A. In this specification, the wiring refers to the first wiring 12 , the second wiring 13 and/or the third wiring 14 . As the wiring main portion 12A, well-known materials such as copper can be used. Plating 12B is provided on the wiring main portion 12A to increase the reflectivity of the wiring surface and suppress vulcanization. For example, phosphorus-containing nickel plating 120A may be provided on the wiring main portion 12A. Since nickel contains phosphorus, hardness increases, and therefore, since phosphorus-containing nickel plating 120A is located on wiring main portion 12A, the hardness of wiring increases. Thereby, it is possible to suppress generation of burrs on the wiring when the wiring is cut due to singulation of the light-emitting device or the like. Phosphorus-containing nickel plating can be formed by electrolytic plating or electroless plating.

As shown in FIG. 6A , it is preferable that the gold plating 120B is located on the outermost surface of the plating 12B. By placing the gold plating on the outermost surface of the plating, the surface oxidation and corrosion of the first wiring 12, the second wiring 13 and/or the third wiring 14 are suppressed, good solderability is obtained, reflectivity can be improved, or sulfidation can be suppressed. Preferably, the gold plating 120B located on the outermost surface of the plating 12B is formed by electrolytic plating. The electrolytic plating method can reduce the poisonous catalysts containing sulfur and the like more than the electroless plating method. When the additional reactive silicone resin using a platinum-based catalyst is hardened at the position in contact with the gold plating, the gold plating formed by the electrolytic plating method contains less sulfur, so the reaction between sulfur and platinum can be suppressed. Thereby, it is possible to suppress poor curing of the additional reaction type silicone resin using a platinum-based catalyst. To form the gold plating 120B in contact with the phosphorus-containing nickel plating 120A, the phosphorus-containing nickel plating 120A and the gold plating 120B are preferably formed by electrolytic plating. By forming the plating by the same method, the manufacturing cost of the light-emitting device can be suppressed. In addition, the so-called nickel plating may contain nickel, and the so-called gold plating may contain only gold or other materials.

Preferably, the nickel plating containing phosphorous is thicker than the gold plating. Since the thickness of phosphorus-containing nickel plating is thicker than that of gold plating, it is easy to increase the hardness of the first wiring 12, the second wiring 13, and/or the third wiring 14. The thickness of the phosphorous-containing nickel plating is preferably at least 5 times but not more than 500 times the thickness of the gold plating, more preferably at least 10 times and not more than 100 times.

In the light-emitting device 1000A shown in FIG. 6B , the wiring can also be formed on the wiring main part 12A with the plating 12B layered with phosphorus-containing nickel plating 120C, palladium plating 120D, first gold plating 120E, and second gold plating 120F. By laminating phosphorous-containing nickel plating 120C, palladium plating 120D, first gold plating 120E, and second gold plating 120F, for example, when copper is used for wiring main portion 12A, diffusion of copper in plating 12B can be suppressed. Thereby, the reduction of the adhesiveness of each plated layer can be suppressed. Phosphorus-containing nickel plating 120C, palladium plating 120D, and first gold plating 120E may be formed on wiring main portion 12A by electroless plating, and second gold plating 120F may be formed by electrolytic plating. Since the second gold plating 120F formed by the electrolytic plating method is located on the outermost surface, poor curing of the additional reaction type silicone resin using a platinum-based catalyst can be suppressed.

As shown in FIG. 2A , the light emitting element 20 has a mounting surface facing the substrate 10 and a light extraction surface 201 located on the opposite side of the mounting surface. The light emitting element 20 includes at least a semiconductor laminate 23 , and positive and negative electrodes 21 and 22 are provided on the semiconductor laminate 23 . Preferably, the positive and negative electrodes 21 and 22 are formed on the same side as the light-emitting element 20 , and the light-emitting element 20 is flip-chip mounted on the substrate 10 . Thereby, since the coil for supplying power to the positive and negative electrodes of the light-emitting element is unnecessary, the light-emitting device can be miniaturized. When a light-emitting element is mounted on a flip chip, the surface where the positive and negative electrodes of the light-emitting element are located is the electrode formation surface 203 , and the surface on the opposite side is the light extraction surface 201 . In addition, in this embodiment, the light emitting element 20 has the element substrate 24, but the element substrate 24 may be removed. When the light emitting element 20 is flip-chip mounted on the substrate 10 , the positive and negative electrodes 21 and 22 of the light emitting element are connected to the first wiring 12 via the conductive bonding member 60 .

When the light-emitting element 20 is flip-chip mounted on the substrate 10, as shown in FIG. 2A and FIG. 7A, it is preferable that the first wiring 12 has convex portion 121 . Since the first wiring 12 has the convex portion 121, when the first wiring 12 and the positive and negative electrodes 21, 22 of the light emitting element are connected through the conductive adhesive member 60, the alignment of the light emitting element and the substrate can be easily performed by utilizing the automatic alignment effect.

As shown in FIG. 7B , in front view, the first wiring 12 may also have a wiring extension 123 extending in the X direction. As shown in FIG. 7C , the first wiring 12 may not have a wiring extension 123 extending in the X direction. . The wiring extension portion 123 is a portion of the first wiring 12 that has a width narrower than that of the first wiring 12 overlapping with the light emitting element 20 in a front view and extends from a portion of the first wiring 12 overlapping with the light emitting element 20 part. When the wiring extension extends in the X direction, the width of the part of the first wiring overlapping with the light-emitting element and the width of the wiring extension are the width in the Y direction; when the wiring extension extends in the Y direction, it is the same as the light emitting The partial width of the first wiring where elements overlap and the width of the wiring extension are widths in the X direction. The wiring extension portion 123 can extend to the outer edge of the base material or be separated from the outer edge of the base material in a front view. In the front view, when the wiring extension 123 is formed by extending from the predetermined position where the light-emitting element is placed toward the X+ direction and/or the X-direction, when the light-emitting element is placed on the substrate, the wiring extension 123 can be used as mark to load. Let the X+ direction on the X-axis be the direction from left to right under the front view, and the opposite direction of the X+ direction be the X- direction. Thereby, it becomes easy to mount a light emitting element on a board|substrate. The first wiring 12 may include only one wiring extension 123 , or may include a plurality of wiring extensions 123 . In the case of having a plurality of wiring extensions 123, preferably, the wiring extensions 123 are located on both sides of the light emitting element in the X direction. Thereby, the wiring extensions 123 located on both sides of the light-emitting element can be used as marks, so the positional accuracy of placing the light-emitting element on the substrate is improved. In addition, when the light-transmitting member is placed on the light-emitting element, the wiring extension part is also formed by extending from the predetermined position where the light-transmitting member is placed in plan view, so that when the light-transmitting member is placed on the light-emitting element, the The wiring extension is placed as a symbol. Thereby, it becomes easy to mount a translucent member on a light emitting element. When the first wiring 12 does not have the wiring extension 123 extending in the X direction, the contact area between the base material and the reflection member in the X direction can be increased. Thereby, the bonding strength between the base material and the reflective member can be improved. Also, when the first wiring 12 does not have the wiring extension 123 extending in the X direction, the conductive adhesive member does not bleed to the wiring extension 123 extending in the X direction. Thereby, since the bleeding area of the conductive bonding member can be reduced, it is easy to control the shape of the conductive bonding member.

As shown in FIG. 7A , the first wiring 12 may have a wiring extension extending in the Y direction, and as shown in FIG. 7B , the first wiring 12 may not have a wiring extension extending in the Y direction. If the first wiring 12 has a wiring extension extending in the Y direction, the wiring extension can be used as a mark, so the positional accuracy in the Y direction of mounting the light emitting element on the substrate is improved. If the first wiring 12 does not have a wiring extension extending in the Y direction, since the contact area between the base material and the reflective member in the Y direction can be increased, the bonding strength between the base material and the reflective member is improved. In addition, if the first wiring does not have the wiring extension extending in the Y direction, the conductive adhesive member can be prevented from leaking to the wiring extension extending in the Y direction. Thereby, since the bleeding area of the conductive bonding member can be reduced, it is easy to control the shape of the conductive bonding member.

If there is no wiring extension extending in the Y direction, the length L2 of the first wiring in the Y direction is preferably not less than 0.3 times and not more than 0.9 times the length L1 of the base material in the Y direction. If the length L2 of the first wiring in the Y direction is at least 0.3 times the length L1 of the base material in the Y direction, the area of the first wiring increases, making it easy to mount the light emitting element. The length L2 of the first wiring in the Y direction is not more than 0.9 times the length L1 of the base material in the Y direction, so that the contact area between the base material and the reflective member can be increased. Also, the length L2 of the first wiring in the Y direction is not more than 0.9 times the length L1 of the base material in the Y direction, so that the area where the conductive adhesive member bleeds onto the first wiring can be reduced. In addition, when there is a wiring extension extending in the Y direction, the length of the first wiring 12 in the Y direction of the portion other than the wiring extension extending in the Y direction is preferably 0.3 of the length of the base material in the Y direction. Times more than 0.9 times.

The light emitting device 1000 may also include a translucent member 30 covering the light emitting element 20 . Since the light emitting element 20 is covered by the translucent member, it is possible to protect the light emitting element 20 from external stress. The translucent member 30 may also cover the light emitting element 20 via the light guide member 50 . The light guide member 50 can only be located between the light-emitting element 201 and the light-transmitting member 30 to fix the light-emitting element 20 and the light-transmitting member 30, or it can be covered from the light-emitting element 201 to the side surface of the light-emitting element 202 to fix the light emitting element 20 and the translucent member 30 . The light transmittance of the self-luminous element 20 of the light guide member 50 is higher than that of the first reflective member 40 . Therefore, since the light guide member 50 covers the side surface 202 of the light-emitting element, the light emitted from the side surface of the light-emitting element 20 is easily extracted toward the outside of the light-emitting device through the light guide member 50, so that the light extraction efficiency can be improved.

When the light-emitting device includes the translucent member 30 , it is preferable that the side surface of the translucent member is covered with the first reflective member 40 . Thereby, the contrast ratio between the light-emitting area and the non-light-emitting area is high, and it can become a light-emitting device with good "marginal property".

The translucent member 30 may also contain wavelength conversion particles 32 . The wavelength conversion particle 32 is a member that absorbs at least a part of the primary light emitted by the light emitting element 20 and emits secondary light having a different wavelength from the primary light. By including the wavelength conversion particles 32 in the light-transmitting member 30 , it is possible to output the mixed color light in which the primary light emitted by the light emitting element 20 and the secondary light emitted by the wavelength conversion particles 32 are mixed. For example, if a blue LED is used for the light-emitting element 20 and a phosphor such as YAG is used for the wavelength conversion particle 32, the output can be configured so that the blue light of the blue LED is mixed with the yellow light emitted by the phosphor excited by the blue light. A light-emitting device of white light is obtained.

The wavelength conversion particles can be uniformly dispersed in the light-transmitting member, or the wavelength-converting particles can be more distributed near the light-emitting element than the upper surface of the light-transmitting member 30 . By distributing the wavelength conversion particles near the light-emitting element more than the upper surface of the light-transmitting member 30, the base material 31 of the light-transmitting member 30 functions as a protective layer even if the wavelength converting particles 32 that are not water-resistant are used. Deterioration of the wavelength converting particles 32 can be suppressed. In addition, as shown in FIG. 2A , the translucent member 30 may include a layer containing wavelength conversion particles 32 and a layer 33 substantially not containing wavelength conversion particles. In the Z direction, the layer 33 substantially free of wavelength conversion particles is located above the layer containing wavelength conversion particles 32 . Thereby, since the layer 33 substantially not containing the wavelength conversion particle also functions as a protective layer, deterioration of the wavelength conversion particle 32 can be suppressed. Examples of the water-resistant wavelength conversion particles 32 include, for example, manganese-activated fluoride phosphors. The manganese-activated fluoride-based fluorescent system is a better component in terms of color reproducibility of luminescence with a narrow spectral linewidth. The term "substantially free of wavelength conversion particles" means that unavoidable inclusion of wavelength conversion particles is not excluded, and the content of wavelength conversion particles is preferably 0.05% by weight or less.

The first reflective member 40 covers the side surfaces of the light emitting element 20 and the front surface of the substrate. The first reflection member 40 can reflect the light traveling in the X direction and/or the Y direction from the light emitting device 20 by covering the side surface of the light emitting device, and increase the light traveling in the Z direction.

As shown in FIG. 5 , preferably, the side surface 405 of the first reflective member 40 in the short direction and the side surface 105 of the substrate 10 in the short direction are substantially on the same plane. Thereby, since the width in the first direction (X direction) can be shortened, the light emitting device can be miniaturized.

As shown in FIG. 8 , it is preferable that the side surface 403 in the longitudinal direction of the first reflective member 40 on the side of the bottom surface 113 is inclined toward the inner side of the light emitting device 1000 in the Z direction. Thereby, when the light emitting device 1000 is mounted on the mounting substrate, the contact between the side surface 403 of the first reflection member 40 and the mounting substrate is suppressed, and the mounting posture of the light emitting device 1000 is easily stabilized. Preferably, the side surface 404 in the longitudinal direction of the first reflective member 40 located on the side of the upper surface 114 is inclined toward the inner side of the light emitting device 1000 in the Z direction. Thereby, the side surface of the first reflection member 40 can be suppressed from coming into contact with the suction nozzle (chuck), and damage to the first reflection member 40 can be suppressed when the light-emitting device 1000 is suctioned. In this way, it is preferable that the side surface 403 in the longitudinal direction of the first reflective member 40 located on the bottom surface 113 side and the side surface 404 in the longitudinal direction of the first reflective member 40 located on the upper surface 114 side face the front direction (Z direction) from the back. The upper side is inclined toward the inner side of the light emitting device 1000 . The inclination angle θ of the first reflective member 40 can be appropriately selected, but from the viewpoint of the easiness of this effect and the strength of the first reflective member 40, it is preferably 0.3° to 3°, more preferably 0.5° More than 2°, more preferably 0.7° to 1.5°. In addition, the right side and the left side of the light emitting device 1000 are preferably set to approximately the same shape. Thereby, the light emitting device 1000 can be miniaturized.

＜Embodiment 2＞ The light emitting device 2000 according to Embodiment 2 of the present invention shown in FIGS. 9A to 12 differs from the light emitting device 1000 according to Embodiment 1 in the number of light emitting devices mounted on the substrate and the concave portion of the substrate. and the number of via holes, and an insulating film.

As shown in FIG. 10 , since the via hole 15 is in contact with the first wiring 12 , the second wiring 13 and the third wiring 14 , the heat dissipation of the light emitting device 2000 can be improved. The third wiring 14 located in one recess may be connected to one via hole 15 , and the third wiring 14 located in one recess may be connected to a plurality of via holes 15 . By connecting the third wiring 14 to the plurality of via holes 15, the heat dissipation of the light emitting device is further improved. As shown in FIG. 11, when there are two via holes connected to the third wiring 14 located in one concave portion, one via hole and the other via hole may also be parallel to the second direction (Y direction). The center line 11C of the concave portion is positioned symmetrically on the left and right.

As shown in FIG. 10 , the light emitting device 2000 may include a first light emitting element 20A and a second light emitting element 20B. The peak emission wavelength of the first light emitting element 20A and the peak emission wavelength of the second light emitting element 20B may be the same or different. If the peak emission wavelength of the first light-emitting element 20A is different from that of the second light-emitting element 20B, it is preferable that the peak emission wavelength of the first light-emitting element 20A is within the range of 430 nm to 490 nm (wavelength in the blue region) range), the emission peak wavelength of the second light-emitting element 20B is within the range from 490 nm to 570 nm (the wavelength range of the green region). Thereby, the color rendering property of the light emitting device can be improved.

If the light emitting device includes a plurality of light emitting elements (first light emitting element 20A and second light emitting element 20B), it is preferable that the plurality of light emitting elements are arranged side by side in the first direction (X direction). Thereby, since the width of the light emitting device 2000 in the second direction (Y direction) can be shortened, the thickness of the light emitting device can be reduced.

As shown in FIG. 10, the first light-emitting element 20A and the second light-emitting element 20B can be covered by a light-transmitting member 30, such as the light-emitting device 2000A shown in FIG. 12A and FIG. 12B, the first light-emitting element 20A and the second light-emitting element Each of 20B may be covered with a different translucent member. Covering the first light-emitting element 20A and the second light-emitting element 20B with one light-transmitting member 30 can increase the size of the light-transmitting member 30, so that the light extraction efficiency of the light-emitting device can be improved. By covering the first light-emitting element 20A and the second light-emitting element 20B with different translucent members, the first reflective member can be formed between one translucent member and the other translucent member. Thereby, it can be a light-emitting device with good "boundary property".

In the light-emitting device 2000B shown in FIG. 12C , the translucent member 30 may also include a first wavelength conversion layer 31E facing the light extraction surface of the light-emitting device, and a second wavelength conversion layer disposed on the first wavelength conversion layer 31E. Layer 31F. The first wavelength conversion layer 31E includes a base material 312E and first wavelength conversion particles 311E. The second wavelength conversion layer 31F includes a base material 312F and second wavelength conversion particles 311F. Preferably, the peak wavelength of light from the first wavelength conversion particles 311E excited by the light emitting element is shorter than the peak wavelength of light from the second wavelength conversion particles 311F excited by the light emitting element. Since the peak wavelength of light from the first wavelength conversion particles 311E excited by the light emitting element is shorter than the peak wavelength of light from the second wavelength conversion particles 311F excited by the light emitting element, The light from the wavelength conversion particle 311E excites the second wavelength conversion particle 311F. Thereby, the light from the excited second wavelength conversion particle 311F can be increased. Since the second wavelength conversion layer 31F is disposed on the first wavelength conversion layer 31E, light from the first wavelength conversion particles 311E excited by the light-emitting element is easily emitted toward the second wavelength conversion particles 311F.

Preferably, the peak wavelength of light from the first wavelength conversion particle 311E excited by the light-emitting element is 500 nm to 570 nm, and the peak wavelength of light from the second wavelength conversion particle 311F excited by the light-emitting element is 610 nm to 750 nm. below nm. Thereby, it can be a light-emitting device with high color rendering. For example, a β-sialon-based phosphor is mentioned as the first wavelength converting particle, and a manganese-activated potassium fluorosilicate phosphor is mentioned as the second wavelength converting particle. In the case of using a manganese-activated potassium fluorosilicate phosphor as the second wavelength conversion particles, it is particularly preferable that the translucent member 30 includes the first wavelength conversion layer 31E and the second wavelength conversion layer 31F. The manganese-activated fluoride phosphor, that is, the second wavelength conversion particles, tends to cause brightness saturation, but by placing the first wavelength conversion layer 31E between the second wavelength conversion layer 31F and the light-emitting element, the light from the light-emitting element can be suppressed from being excessively brightened. Irradiate the second wavelength conversion particles. Thereby, deterioration of the second wavelength conversion particles which are manganese-activated fluoride phosphors can be suppressed. In addition, when the first wavelength conversion particles and the second wavelength conversion particles are contained in the same wavelength conversion layer, it is preferable that the second wavelength conversion particles are dispersed in the entire wavelength conversion layer, and the first wavelength conversion particles are distributed in the light-emitting area. The light output side of the element. For example, the first wavelength conversion particles and the second wavelength conversion particles may be mixed on the light extraction surface side of the light emitting element of the wavelength conversion layer, and only the second wavelength conversion particles are located on the light extraction surface side of the light emitting element of the wavelength conversion layer. Opposite side. If the second wavelength conversion particles are dispersed throughout the wavelength conversion layer and the first wavelength conversion particles are distributed on the side of the light-extracting surface of the light-emitting element, since most of the first wavelength conversion particles are located at a lower wavelength than the second wavelength The conversion particles are closer to the light extraction surface of the light-emitting element, so the second wavelength conversion particles 311F are easily excited by the light from the first wavelength conversion particles 311E excited by the light-emitting element. Thereby, the light from the excited second wavelength conversion particle 311F can be increased. In addition, when the phosphor of manganese-activated potassium fluorosilicate is used as the second wavelength conversion particles, excessive irradiation of light from the light emitting element on the second wavelength conversion particles through the first wavelength conversion particles can be suppressed. Thereby, deterioration of the second wavelength conversion particles which are manganese-activated fluoride phosphors can be suppressed.

The light-transmitting member may contain only one kind of green-emitting wavelength conversion particles, or may contain plural kinds. Also, only one kind of red-emitting wavelength conversion particles may be contained, or plural kinds may be contained. For example, as the wavelength conversion particle whose peak wavelength of the light from the wavelength conversion particle excited by the light-emitting element is 610 nm to 750 nm, CASN-based phosphor, manganese-activated fluorosilicic acid may be contained in the light-transmitting member 30 Potassium phosphors (eg K ₂ SiF ₆ :Mn). In general, CASN-based phosphors have a shorter afterglow time, which is the time from when the emission of wavelength conversion particles stops after stopping the irradiation of excitation light to when the phosphors of the manganese-activated potassium fluorosilicate are stopped. Therefore, since the light-transmitting member contains the CASN-based phosphor and the phosphor of manganese-activated potassium fluorosilicate, the time can be shortened compared to the case where the light-transmitting member only contains the phosphor of manganese-activated potassium fluorosilicate. Afterglow time. In addition, in general, manganese-activated potassium fluorosilicate has a luminescence peak narrower than that of CASN-based phosphors, so the color purity becomes higher and the color reproducibility becomes better. Therefore, since the light-transmitting member contains the CASN-based phosphor and the manganese-activated potassium fluorosilicate phosphor, the color reproducibility is better than the case where the light-transmitting member only contains the CASN-based phosphor.

For example, the weight of the manganese-activated potassium fluorosilicate phosphor contained in the light-transmitting member is preferably 0.5 to 6 times the weight of the CASN-based phosphor, more preferably 1 to 5 times, More preferably, it is 2 times or more and 4 times or less. The color reproducibility of the light-emitting device becomes good by increasing the weight of the phosphor of manganese-activated potassium fluorosilicate. The afterglow time can be shortened by increasing the weight of the phosphor of the CASN-based phosphor.

The average particle size of the manganese-activated potassium fluorosilicate phosphor is preferably not less than 5 μm and not more than 30 μm. Also, the average particle diameter of the CASN-based phosphor is preferably not less than 5 μm and not more than 30 μm. When the concentration of the wavelength conversion particles contained in the light-transmitting member is the same, the particle size of the wavelength conversion particles is smaller, and the light from the light-emitting element is easily diffused in the wavelength conversion particles, so the light distribution chromaticity of the light-emitting device can be suppressed uneven. Also, when the concentration of the wavelength conversion particles contained in the light-transmitting member is the same, the larger the particle diameter of the wavelength conversion particles, the easier it is to extract the light from the light-emitting element, so the light extraction efficiency of the light-emitting device is improved.

CASN-based phosphors and manganese-activated potassium fluorosilicate phosphors can be contained in the same wavelength conversion layer of the light-transmitting member, or in different wavelength conversion layers when the light-transmitting member has multiple wavelength conversion layers. in the wavelength conversion layer. In the case where the manganese-activated potassium fluorosilicate phosphor and the CASN-based phosphor are contained in different wavelength conversion layers, it is preferable that the phosphors of the manganese-activated potassium fluorosilicate and the CASN-based phosphor have the same amount of light. The wavelength conversion particles with shorter peak wavelengths are located near the light-emitting element. Thereby, the wavelength conversion particle whose peak wavelength of light is longer can be excited by the light from the wavelength conversion particle whose peak wavelength of light is shorter. For example, manganese-activated potassium fluorosilicate has a peak wavelength of light near 631 nm, and when the peak wavelength of light of a CASN-based phosphor is around 650 nm, manganese-activated potassium fluorosilicate is preferred. The phosphor is closer to the light emitting element.

The translucent member may also contain SCASN-based phosphors and manganese-activated potassium fluorosilicate phosphors. Even if the light-transmitting member contains SCASN-based phosphors, the afterglow time can be shortened. In addition, the translucent member may contain a CASN-based phosphor, a manganese-activated potassium fluorosilicate phosphor, and a β-sialon-based phosphor. Thereby, the color reproducibility of the light-emitting device becomes good.

The light-emitting device 2000B shown in FIG. 12C may also include a via hole 15A connected to the first wiring, the second wiring, and the third wiring, and a via hole connected to the first wiring and the second wiring but separated from the third wiring. 15B. As shown in FIG. 12D , in a rear view, the via hole 15A overlaps the second wiring 13 and the third wiring 14 , and the via hole 15B overlaps the second wiring 13 and does not overlap the third wiring.

As shown in FIG. 12C , the light guide member 50 may not cover the side surface of the light-transmitting member 30 , or may cover the side surface of the light-transmitting member 30 . The translucent member 30 includes a first wavelength conversion layer 31E facing the light extraction surface of the light emitting element, a second wavelength conversion layer 31F disposed on the first wavelength conversion layer 31E, and a wavelength conversion layer 31F disposed on the second wavelength conversion layer 31. In the case of the layer 33 substantially free of wavelength conversion particles, a light emitting device 2000C as shown in FIG. The side surface of the layer 33 containing no wavelength conversion particles is exposed from the light guide member 50 . In addition, in the light-emitting device 2000D shown in FIG. 12F , the side surfaces of the first wavelength conversion layer 31E and the second wavelength conversion layer 31F may be covered by the light guide member 50, and the side surfaces of the layer 33 substantially free of wavelength conversion particles may be covered by the light guide member 50. The light guide member 50 is exposed. In the light-emitting device 2000E shown in FIG. 12G , the side surfaces of the first wavelength conversion layer 31E, the second wavelength conversion layer 31F, and the layer 33 substantially free of wavelength conversion particles may be covered by the light guide member 50 . As shown in FIG. 12G , when the light guide member 50 covers the side surface of the first wavelength conversion layer 31E, the side surface of the second wavelength conversion layer 31F, and the side surface of the layer 33 substantially free of wavelength conversion particles, the light guide member 50 may also be It is exposed from the first reflection member 40 . When the light guide member covers at least a part of the side surface of the translucent member, the light extraction efficiency of the light emitting device can be improved. In the light-emitting device 2000F shown in FIG. 12H , when the side surface of the light-transmitting member 30 has concavities and convexities, the light extraction of the light-emitting device can be improved by covering the concavities and convexities on the side surface of the light-transmitting member 30 with the light-guiding member 50. efficiency.

In the light-emitting device 2000G shown in FIG. 12I , the layer 33 substantially free of wavelength conversion particles preferably includes a layer 33A containing reflective particles and a layer 33B substantially free of reflective particles. Since the layer 33A containing reflective particles is located on the first wavelength conversion layer and/or the second wavelength conversion layer, the light from the light-emitting element diffuses in the translucent member through the layer 33A containing reflective particles. Thereby, the light from the 1st wavelength conversion particle and/or the 2nd wavelength conversion particle excited by the light of a light-emitting element can be increased. Furthermore, since the layer 33B substantially not containing reflective particles is disposed on the layer 33A containing reflective particles, the layer 33B substantially not containing reflective particles can function as a protective layer for the layer 33A containing reflective particles. Also, when the upper surface of the translucent member 30 is ground for the purpose of thinning the light-emitting device, etc., the layer 33B that does not substantially contain reflective particles is disposed on the layer 33A that contains reflective particles, so only the substantially non-reflective particles can be cut. Layer 33B containing reflective particles. Thereby, since the layer 33A containing reflective particles is not ground, it is possible to suppress unevenness in the amount of reflective particles contained in the translucent member. If the layer 33 substantially free of wavelength conversion particles has only one layer containing reflective particles, it is preferable that the reflective particles are distributed on the side of the light-extracting surface of the light-emitting element. Thereby, the base material of the layer 33 substantially free of wavelength conversion particles can function as a protective layer. Examples of the reflective particles include titanium oxide, zirconium oxide, aluminum oxide, silicon oxide, and the like. The reflective particles are preferably titanium oxide, especially having a high refractive index. The content of the reflective particles in the layer substantially free of wavelength conversion particles can be appropriately selected, but from the viewpoint of light reflectivity and viscosity in a liquid state, it is preferably, for example, 0.05 wt % to 0.1 wt %.

In the light-emitting device 2000H shown in FIG. 12J , when the light-transmitting member contains wavelength conversion particles, a film 34 covering the upper surface of the light-transmitting member 30 may be provided. The coating 34 refers to aggregates of nanoparticles, that is, coating particles. In addition, the coating may include not only coating particles but also coating particles and a resin material. The refractive index of the film is different from that of the base material of the light-transmitting member located on the outermost surface, so that the luminous chromaticity of the light-emitting device can be corrected. The base material of the light-transmitting member located on the outermost surface means the base material of the layer forming the surface of the light-emitting element opposite to the light-extracting side of the light-transmitting member. For example, when the refractive index of the film 34 is greater than that of the parent material of the translucent member located on the outermost surface, the reflected light component at the interface between the film and air is larger than that of the parent material of the translucent member located on the outermost surface and air. The reflected light component of the interface increases even more. Therefore, the reflected light component returned to the light-transmitting member can be increased, so that the wavelength conversion particles can be easily excited. Thereby, the emission chromaticity of the light-emitting device can be corrected to the long-wavelength side. Also, when the refractive index of the film 34 is lower than the refractive index of the base material of the light-transmitting member located on the outermost surface, the reflected light component at the interface between the film and air is larger than the reflected light component at the interface between the base material of the light-transmitting member and air. Even less. Thereby, the reflected light component returning to the translucent member can be reduced, so the wavelength conversion particles are less likely to be excited. Thereby, the emission chromaticity of the light emitting device can be corrected to the short wavelength side. For example, when a phenyl-based silicone resin is used as the base material of the light-transmitting member located on the outermost surface, titanium oxide, aluminum oxide, and the like are exemplified as coating particles that correct the emission chromaticity of the light-emitting device to the long-wavelength side. When using phenyl-based silicone resin as the base material of the light-transmitting member located on the outermost surface, silicon oxide and the like are mentioned as coating particles that correct the emission chromaticity of the light-emitting device to the short-wavelength side. When the light-emitting device has a plurality of translucent members, the upper surface of one translucent member may be covered with a film, and the upper surface of the other translucent member may not be covered with a film. Whether or not to form a film covering the upper surface of the light-transmitting member can be appropriately selected in accordance with the correction of the luminous chromaticity of the light-emitting device. In addition, when the light-emitting device has a plurality of light-transmitting members, the upper surface of one light-transmitting member can also be covered with a film having a refractive index higher than that of the base material of the light-transmitting member located on the outermost surface, so that A film having a refractive index smaller than that of the base material of the translucent member located on the outermost surface covers the upper surface of the other translucent member. The material of the film covering the light-transmitting member can be appropriately selected in accordance with the correction of the luminous chromaticity of the light-emitting device. The film can be formed by well-known methods such as pouring from a dispenser, spraying with ink or spray.

In the substrate 10 shown in FIG. 12K , the first wiring 12 preferably has a narrow portion with a short length in the Y direction and a wide portion with a long length in the Y direction when viewed from the front. The length D4 of the narrow portion in the Y direction is shorter than the length D5 of the wide portion in the Y direction. The narrow portion is separated from the center of the via hole 15 in the X direction in a front view, and is located in the X direction where the electrodes of the light emitting element are located. The wide portion is located at the center of the via hole 15 in front view. Since the first wiring 12 has a wide portion, it is possible to reduce the area where the conductive bonding member electrically connecting the electrodes of the light-emitting element and the first wiring bleeds out on the first wiring. Thereby, it is easy to control the shape of the conductive bonding member. In addition, the peripheral portion of the first wiring may have a rounded shape.

As shown in FIG. 10, the light guide member 50 can also continuously cover the light extraction surface 201A of the first light emitting element 20A, the side surface 202A of the first light emitting element 20A, the light extraction surface 201B of the second light emitting element 20B, and the second light emitting element 20B. The side 202B. Thereby, the light of the first light emitting element 20A and/or the second light emitting element 20B can also be extracted between the light extraction surface 201A of the first light emitting element 20A and the light extraction surface 201B of the second light emitting element 20B, so that light emission can be suppressed. The brightness of the device is uneven. Also, when the emission peak wavelength of the first light emitting element 20A is different from the emission peak wavelength of the second light emitting element 20B, the light from the first light emitting element 20A and the light from the second light emitting element 20B can be integrated in the light guide member 50. The light is mixed, so the color shift of the light-emitting device can be suppressed.

The light emitting device may also include an insulating film 18 covering part of the second wiring 13 . By providing the insulating film 18 , it is possible to secure insulation and prevent short circuits when viewed from behind. In addition, it is possible to prevent the second wiring from peeling off from the base material.

＜Embodiment 3＞ The light emitting device 3000 of the third embodiment of the present invention shown in FIGS. 13A to 18B differs from the light emitting device 2000 of the second embodiment in the number of light emitting devices mounted on the substrate and the number of light emitting devices included in the substrate. The number of recesses and via holes, the shape of the substrate, the shape of the recesses, the configuration of the light-transmitting member, and the provision of the second reflection member and the third reflection member.

As shown in FIG. 14A , since the via hole 15 is in contact with the first wiring 12 , the second wiring 13 and the third wiring 14 , the heat dissipation of the light emitting device 3000 can be improved. The number of recesses and via holes included in the base material can be appropriately changed according to the size of the base material and the like.

As shown in FIG. 14A , the substrate 11 may also have a concave portion 111A on the front surface 111 . Since the substrate 11 has the concave portion 111A, the contact area between the first reflection member and the substrate 11 can be increased. Thereby, the bond strength of a 1st reflection member and a base material can be improved. The recesses 111A are preferably located at both ends of the front surface 111 in the longitudinal direction (X direction). Thereby, the bonding strength with the first reflective member can be increased at both ends of the base material, so that peeling between the first reflective member and the base material can be suppressed.

As shown in Fig. 15 and Fig. 16, the substrate 10 may have: a central recess 16A, which is open on the back and bottom of the substrate, and is separated from the side 105 of the substrate; and an end recess 16B, which is open on the back and bottom of the substrate And side 105 openings. The side 105 of the substrate is located between the front and back of the substrate. Since the substrate 10 has the end recess 16B, the bonding strength with the mounting substrate can be improved at the end of the light emitting device. In the case of having a plurality of end recesses 16B, it is preferable that the end recesses be located at both ends of the base material in a rear view. Thereby, the bonding strength of the mounting substrate of the light emitting device is improved. The substrate 10 may include only either one of the central concave portion 16A or the end concave portion 16B. In addition, in this specification, a recessed part means a central recessed part and/or an end part recessed part. As shown in FIG. 15 , there are a plurality of via holes 15 , and a via hole overlapping with the central concave portion 16A and a via hole overlapping with the end concave portions 16B may be provided in a rear view.

As shown in FIG. 14A , the light emitting device 3000 may include a first light emitting element 20A, a second light emitting element 20B, and a third light emitting element 20C. In addition, the light emitting device may include four or more light emitting elements. In this specification, a light emitting element refers to the first light emitting element 20A, the second light emitting element 20B, and/or the third light emitting element 20C. As shown in FIG. 17A , it is preferable that the first light emitting element 20A, the second light emitting element 20B, and the third light emitting element 20C are arranged side by side in the longitudinal direction (X direction) in a front view. Thereby, the light emitting device can be thinned in the Y direction. When the light extraction surfaces of the first light emitting element and the second light emitting element are rectangular, it is preferable that the short side 2011A of the light extraction surface of the first light emitting element is opposite to the short side 2011B of the light extraction surface of the second light emitting element. When the light extraction surfaces of the second light emitting element and the third light emitting element are rectangular, it is preferable that the short side 2012B of the light extraction surface of the second light emitting element is opposite to the short side 2011C of the light extraction surface of the third light emitting element. Thereby, the light emitting device can be thinned in the Y direction. The term "rectangle" in this specification means a quadrangular shape having 2 long sides and 2 short sides, and 4 inner angles are right angles. In addition, the term "right angle" in this specification means 90±3°.

The peak emission wavelength of the first light emitting element 20A, the peak emission wavelength of the second light emitting element 20B, and the peak emission wavelength of the third light emitting element 20C may be the same or different. Since the peak emission wavelength of the first light-emitting element 20A, the peak emission wavelength of the second light-emitting element 20B, and the peak emission wavelength of the third light-emitting element 20C are different, it can be a light-emitting device with high color rendering. When the first light-emitting element 20A, the second light-emitting element 20B, and the third light-emitting element 20C are arranged in sequence, the peak emission wavelength of the first light-emitting element 20A and the peak emission wavelength of the third light-emitting element 20C may be the same, and the second The light emission peak wavelength of the light emitting element 20B is different from the light emission peak wavelength of the first light emitting element 20A. Thereby, for example, if the output of the first light emitting element 20A is insufficient, it can be compensated by the third light emitting element 20C. Also, since the second light emitting element 20B having an emission peak wavelength different from the emission peak wavelength of the first light emitting element 20A and the emission peak wavelength of the third light emitting element 20C is located between the first light emitting element 20A and the third light emitting element 20C, The light-emitting device has high color rendering and can reduce color shift. In addition, in this specification, "same as the emission peak wavelength" means that a fluctuation of about ±10 nm is allowed. When the peak emission wavelength of the first light-emitting element 20A is within a range from 430 nm to 490 nm (wavelength range in the blue region), it is preferable that the peak emission wavelength of the third light-emitting element 20C is not less than 430 nm. within the range of 490 nm. Thereby, the excitation efficiency of the wavelength conversion particle can be improved by selecting the wavelength conversion particle having the peak wavelength of the excitation efficiency in the range from 430 nm to 490 nm.

As shown in FIG. 14A, the light extraction surface 201A of the first light-emitting element 20A in the Z direction and the light extraction surface 201B of the second light-emitting element 20B can be located at approximately the same height, and the light extraction surface of the first light-emitting element 20A in the Z direction 201A and the light extraction surface 201B of the second light emitting element 20B may also be located at different heights. For example, in the light-emitting device 3000A shown in FIG. 14B , the light-extracting surface 201A of the first light-emitting element 20A may be located on the lower side than the light-extracting surface 201B of the second light-emitting element 20B in the Z direction. Since the light extraction surface 201A of the first light emitting element 20A is located below the light extraction surface 201B of the second light emitting element 20B in the Z direction, the light from the second light emitting element 20B tends to spread in the longitudinal direction (X direction). In addition, in the light emitting device 3000B shown in FIG. 14C , the light extraction surface 201A of the first light emitting element 20A may be located higher than the light extraction surface 201B of the second light emitting element 20B in the Z direction. Since the light extraction surface 201A of the first light emitting element 20A is located above the light extraction surface 201B of the second light emitting element 20B in the Z direction, the light from the first light emitting element 20A tends to spread in the longitudinal direction (X direction).

As shown in FIG. 17A, the length of the short side 2011A of the light extraction surface 201A of the first light emitting element 20A and the short side 2011B of the light extraction surface 201B of the second light emitting element 20B may be approximately the same, or the length of the first light emitting element The short side 2011A of the light extraction surface 201A of 20A is different in length from the short side 2011B of the light extraction surface 201B of the second light emitting element 20B. For example, as shown in FIG. 17B , the length of the short side 2011A of the light extraction surface 201A of the first light emitting element 20A can be longer than the length of the short side 2011B of the light extraction surface 201B of the second light emitting element 20B. Thereby, light from the first light emitting element 20A easily spreads in the longitudinal direction (X direction). Also, as shown in FIG. 17C , the length of the short side 2011A of the light extraction surface 201A of the first light emitting element 20A may be shorter than the length of the short side 2011B of the light extraction surface 201B of the second light emitting element 20B. Thereby, light from the second light emitting element 20B spreads easily in the longitudinal direction (X direction).

As shown in FIG. 14A , the light-transmitting member 30 may also include a first light-transmitting layer 31A facing the light extraction surface of the light-emitting device, and a wavelength conversion layer 31B disposed on the first light-transmitting layer 31A. The first light-transmitting layer 31A includes a base material 312A and first diffusion particles 311A. The wavelength conversion layer 31B includes a base material 312B and wavelength conversion particles 32 . Since the light-transmitting member 30 has the first light-transmitting layer 31A facing the light-extracting surface of the light-emitting element, the light from the first light-emitting element and the second light-emitting element is diffused through the first light-transmitting layer 31A. Thereby, since the light from the first light-emitting element, the second light-emitting element, and/or the third light-emitting element can be mixed in the first light-transmitting layer 31A, uneven brightness of the light-emitting device can be reduced. When the first light-emitting element, the second light-emitting element, and/or the third light-emitting element have different emission peak wavelengths, since the light from the first light-emitting element, the second light-emitting element, and/or the third light-emitting element can be Mixing in the light-transmitting layer 31A can reduce the color shift of the light-emitting device.

The first light-transmitting layer 31A is preferably substantially free of wavelength conversion particles. When the wavelength conversion particles are excited by light from the light-emitting element, part of the light from the light-emitting element is absorbed. Because the first light-transmitting layer 31A is located between the light extraction surface of the light-emitting element and the wavelength conversion layer, the first light-emitting element, the second light-emitting element and/or the third light-emitting element can be absorbed before the light of the light-emitting element is absorbed by the wavelength conversion particles. Light from the light-emitting element is mixed in the first light-transmitting layer 31A. Thereby, reduction of the light extraction efficiency of a light emitting device can be suppressed.

As shown in FIG. 14A , the second light-transmitting layer 31C may also be located on the wavelength converting layer 31B. The second light-transmitting layer 31C is a layer substantially not containing wavelength conversion particles. The second light-transmitting layer 31C may also include a base material 312C and second diffusing particles 311C. Since the second light-transmitting layer 31C includes the second diffusing particles 311C, the light from the light-emitting element and the light from the wavelength conversion particles excited by the light-emitting element can be mixed in the second light-transmitting layer. Thereby, the color shift of the light emitting device can be reduced. For example, the second diffusing particles may be a material having a lower refractive index than the first diffusing particles. Thereby, the light diffused by the second diffusing particle is reduced, so the light extraction efficiency of the light emitting device is improved. As the material whose refractive index is lower than that of the first diffusing particles, titanium oxide can be selected for the first diffusing particles, and silicon oxide can be selected for the second diffusing particles.

As shown in FIG. 14A , a second reflection member 41 may be provided to cover the electrode formation surface 203A of the first light emitting element 20A, the electrode formation surface 203B of the second light emitting element 20B, and/or the electrode formation surface 203C of the third light emitting element 20C. . By including the second reflection member 41 in the light-emitting device, it is possible to suppress light from the light-emitting element from being absorbed by the substrate 10 . Moreover, as shown in FIG. 2A, FIG. 10, and FIG. 12B, the electrode forming surface of the light-emitting element may be covered with the first reflective member. Thereby, it is possible to suppress the light from the light-emitting element from being absorbed by the substrate. Moreover, it is preferable that the 2nd reflection member 41 has the inclined part whose thickness in the Z direction becomes thicker the farther it is from a light emitting element. Since the second reflective member 41 has an inclined portion, the light extraction efficiency of the light emitting device is improved.

As shown in FIG. 14A , a third reflection member 42 may be provided between the light guide member 50 and the first reflection member. The third reflective member 42 covers the side surface of the light emitting element via a light guide member. Forming the light guide member 50 by potting or the like after the formation of the third reflection member 42 can suppress the uneven shape of the light guide member 50 . The surface of the third reflective member 42 facing the translucent member 30 is preferably flat. This makes it easy to form the translucent member 30 after forming the third reflection member 42 . In addition, when the light emitting device includes the third reflection member 42 , the first reflection member covers the side surfaces of the first element and the side surface of the second element via the third reflection member and the light guide member.

The light-emitting device 3000C shown in FIG. 18A may also include a covering member that covers the light extraction surface of the light-emitting element. When the covering member 31D includes diffusing particles 311D, the light from the light emitting element traveling in the Z direction can be reduced and the light traveling in the X direction and/or Y direction can be increased by the covering member 31D having a covered light extraction surface. Thereby, the light from the light-emitting element can be diffused in the light-guiding member, so that uneven brightness of the light-emitting device can be suppressed. In addition, the covering member 31D is located between the light extraction surface of the light emitting element and the light guide member 50 . The first covering member 31D including the diffusion particles 311D preferably exposes at least a part of the side surface of the light emitting element, thereby suppressing reduction of light from the light emitting element traveling in the X direction and/or the Y direction. The covering member 31D may cover the light extraction surface of each of the first light-emitting element, the second light-emitting element, and the third light-emitting element, or may cover only the area inside the light-extraction surface of the first light-emitting element, the second light-emitting element, or the third light-emitting element. 1 light extraction surface.

The covering member 31D may also contain wavelength conversion particles. The color adjustment of the light emitting device is facilitated by having the covering member 31D which covers the light extraction surface of the light emitting element and contains the wavelength conversion particles. In addition, the wavelength conversion particles contained in the covering member 31D may be the same as or different from the wavelength conversion particles contained in the wavelength conversion layer. For example, when the peak wavelength of the luminescence of the light-emitting element is in the range of 490 nm to 570 nm (the wavelength range of the green region), the wavelength conversion particles are preferably CASN-based fluorescents excited by light in the range of 490 nm to 570 nm. Photobodies and/or SCASN-based phosphors. In addition, (Sr,Ca)LiAl ₃ N ₄ :Eu phosphors can also be used as the wavelength conversion particles.

In the light-emitting device 3000C shown in FIG. 18A, one covering member 31D can cover the light extraction surface of one light-emitting element, or in the light-emitting device 3000D shown in FIG. 18B, a plurality of covering members 31D can cover the light-emitting surface of one light-emitting element. Take out the noodles. As shown in FIG. 18B , since a part of the light extraction surface is exposed from the covering member 31D, the light extraction efficiency of the light emitting element is improved.

＜Embodiment 4＞ The light-emitting device 4000 according to the fourth embodiment of the present invention shown in FIG. 19 differs from the light-emitting device 2000 according to the second embodiment in the configuration of the light-transmitting member.

The light-transmitting member 30 of the light-emitting device 4000 includes a first light-transmitting member 30A covering the first light-emitting element 20A, and a second light-transmitting member 30B covering the second light-emitting element 20B. Both the first translucent member 30A and the second translucent member 30B differ in the constituent members and/or the content of the constituent members. For example, the type and/or content of the wavelength conversion particles contained in the first translucent member 30A and the second translucent member 30B are different. Thereby, the color adjustment of the light emitting device becomes easy. As shown in FIG. 19 , the first translucent member 30A may contain wavelength conversion particles, and the second translucent member 30B may not substantially contain wavelength conversion particles. Thereby, the efficiency of light extraction from the second light emitting element 20B can be improved. For example, the emission peak wavelength of the first light emitting element 20A may be in a range from 430 nm to 490 nm (wavelength range in the blue region), and the emission peak wavelength of the second light emitting element 20B may be in a range from 490 nm to 570 nm Within the range (wavelength range of the green region), the first translucent member 30A contains green-emitting wavelength conversion particles and/or red-emitting wavelength conversion particles, and the second translucent member 30B does not substantially contain wavelength-converting particles. In addition, the first translucent member 30A and the second translucent member 30B may be substantially free of wavelength conversion particles. In addition, the emission peak wavelengths of the first light-emitting element 20A and the second light-emitting element may be the same or different.

Hereinafter, each component of a light emitting device according to an embodiment of the present invention will be described.

(substrate 10) The substrate 10 is a member on which light emitting elements are mounted. The substrate 10 is composed of at least a base material 11 , first wiring 12 , second wiring 13 , third wiring 14 , and via holes 15 .

(Substrate 11) The base material 11 can be formed using insulating members such as resin or fiber-reinforced resin, ceramics, and glass. Examples of the resin or fiber-reinforced resin include epoxy, glass epoxy, bismaleimide triazine (BT), polyimide, and the like. Examples of ceramics include alumina, aluminum nitride, zirconia, zirconium nitride, titanium oxide, titanium nitride, or mixtures thereof. Among these substrates, those having physical properties close to the linear expansion coefficient of light-emitting elements are particularly preferred. The lower limit of the substrate thickness can be appropriately selected, but from the viewpoint of substrate strength, it is preferably at least 0.05 mm, more preferably at least 0.2 mm. Also, the upper limit of the substrate thickness is preferably 0.5 mm or less, more preferably 0.4 mm or less, from the viewpoint of the thickness (depth) of the light-emitting device.

(1st wiring 12, 2nd wiring 13, 3rd wiring 14) The first wiring is arranged on the front surface of the substrate and is electrically connected with the light emitting element. The second wiring is arranged on the back surface of the substrate, and is electrically connected to the first wiring through the via hole. The third wiring covers the inner wall of the recess and is electrically connected to the second wiring. The first wiring, the second wiring, and the third wiring can be made of copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, or alloys thereof. These metals or alloys can be single layer or multilayer. In particular, copper or a copper alloy is preferable from the viewpoint of heat dissipation. Also, from the viewpoint of wettability and/or light reflectivity of the conductive adhesive member, silver, platinum, aluminum, rhodium, gold, or the like may be provided on the surface layer of the first wiring and/or the second wiring. Alloy layers.

(via 15) The via hole 15 is provided in a hole penetrating through the front and back of the substrate 11 to electrically connect the first wiring and the above-mentioned second wiring. The via hole 15 may also be composed of the fourth wiring 151 covering the surface of the through hole of the base material, and the filling member 152 filling the inside of the fourth wiring 151 . The same conductive member as that of the first wiring, the second wiring, and the third wiring can be used for the fourth wiring 151 . As the filling member 152, a conductive member or an insulating member may be used.

(insulating film 18) The insulating film 18 is a member intended to secure the insulation of the back surface and prevent short circuits. The insulating film can be formed by any of those used in this field. For example, thermosetting resin, thermoplastic resin, etc. are mentioned.

(Light-emitting element 20 ) The light-emitting element 20 is a semiconductor element that emits light by itself when a voltage is applied, and a known semiconductor element made of a nitride semiconductor or the like can be used. As the light emitting element 20, an LED chip is mentioned, for example. The light-emitting element 20 includes at least a semiconductor laminate 23 and, in many cases, further includes a substrate 24 . The top view shape of the light-emitting element is preferably a rectangle, especially a square shape or a long rectangle shape in one direction, but it can also be other shapes, for example, a hexagonal shape can also improve the luminous efficiency. The side surface of the light-emitting element can be perpendicular to the upper surface, and can also be inclined inside or outside. Also, the light emitting element has positive and negative electrodes. The positive and negative electrodes can be made of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel or their alloys. The luminous peak wavelength of the light-emitting element can be selected from the ultraviolet region to the infrared region according to the semiconductor material and its mixed crystal ratio. As the semiconductor material, it is preferable to use a material that emits short-wavelength light that efficiently excites the wavelength conversion particles, that is, a nitride semiconductor. Nitride semiconductors are mainly represented by the general formula In _{x Aly} Ga _1-xy N (0≦x, 0≦y, x+y≦1). From the perspectives of luminous efficiency, excitation of wavelength conversion particles, and the relationship between luminescence and color mixing, the peak wavelength of light emission of the light-emitting element is preferably between 400 nm and 530 nm, more preferably between 420 nm and 490 nm, and most preferably Above 450 nm and below 470 nm. In addition, InAlGaAs-based semiconductors, InAlGaP-based semiconductors, zinc sulfide, zinc selenide, silicon carbide, and the like can also be used. The element substrate of a light-emitting element is mainly a substrate for crystal growth on which semiconductor crystals constituting a semiconductor laminate can be grown, but it may also be a substrate for joining to a semiconductor element structure that is separated from the substrate for crystal growth. Due to the light transmittance of the component substrate, it is easy to adopt flip-chip installation, and it is easy to improve the light extraction efficiency. Examples of base materials for element substrates include sapphire, gallium nitride, aluminum nitride, silicon, silicon dioxide, gallium arsenide, gallium phosphide, indium phosphide, zinc sulfide, zinc oxide, zinc selenide, and diamond. Among them, sapphire is preferred. The thickness of the element substrate can be appropriately selected, for example, from 0.02 mm to 1 mm, and from the viewpoint of the strength of the element substrate and/or the thickness of the light emitting device, it is preferably from 0.05 mm to 0.3 mm.

(translucent member 30) The light-transmitting member is a member arranged on the light-emitting element and protecting the light-emitting element. The translucent member is composed of at least the following base materials. In addition, the light-transmitting member can function as wavelength converting particles by including the following wavelength converting particles 32 in the base material. The base material of each layer of the light-transmitting member is constituted as follows. The base materials of each layer may be the same or different. The light-transmitting member does not need to have wavelength conversion particles. Also, as the translucent member, a sintered body of wavelength conversion particles and an inorganic substance such as aluminum, or a plate-like crystal of wavelength conversion particles can be used.

(base material 31 of light-transmitting member) The base material 31 of the translucent member should just be translucent with respect to the light emitted from a light emitting element. In addition, the so-called "light transmittance" means that the light transmittance of the light emission peak wavelength of the light emitting element is preferably 60% or more, more preferably 70% or more, and most preferably 80% or more. The base material of the light-transmitting member can use silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin or these modified resins. Can also be glass. Among them, silicone resins and modified silicone resins are preferable due to their excellent heat resistance and light resistance. Specific silicone resins include dimethicone resins, phenyl-methyl silicone resins, and diphenyl silicone resins. The translucent member may be formed by laminating one of these base materials in a single layer, or by laminating two or more of these base materials. In addition, the "modified resin" in this specification includes a mixed resin. In addition, the base material of the light-transmitting member also includes base materials of the first light-transmitting layer, the wavelength conversion layer, and the second light-transmitting layer.

The base material of the translucent member may contain various diffusion particles in the above-mentioned resin or glass. Examples of the diffusion particles include silicon oxide, aluminum oxide, zirconium oxide, zinc oxide, and the like. The diffusion particles may be used alone or in combination of two or more of them. In particular, silicon oxide having a small coefficient of thermal expansion is preferable. Also, by using nanoparticles as the diffusing particles, it is also possible to increase the scattering of light emitted from the light-emitting element and reduce the amount of wavelength conversion particles used. In addition, nanoparticles refer to particles with a particle diameter of 1 nm to 100 nm. In addition, the "particle diameter" in this specification is defined by _D50 , for example.

(wavelength conversion particle 32) The wavelength conversion particle absorbs at least a part of the primary light emitted by the light-emitting element, and emits secondary light of a different wavelength from the primary light. The wavelength converting particles may be used alone or in combination of two or more of the specific examples shown below.

Examples of wavelength conversion particles that emit green light include yttrium-aluminum-garnet phosphors (such as Y ₃ (Al,Ga) ₅ O ₁₂ : Ce), lutetium-aluminum-garnet phosphors (such as Lu ₃ (Al,Ga) ₅ O ₁₂ : Ce), Si-Al-Garnet-based phosphors (such as Tb ₃ (Al,Ga) ₅ O ₁₂ : Ce), silicate-based phosphors (such as (Ba, Sr) ₂ SiO ₄ :Eu), chlorosilicate phosphors (such as Ca ₈ Mg(SiO ₄ ) ₄ Cl ₂ :Eu), β-sialon phosphors (such as Si _6-z Al _z O _z N _8-z : Eu (0<z<4.2)), SGS phosphors (such as SrGa ₂ S ₄ : Eu), alkaline earth aluminate silicon phosphors (such as (Ba, Sr, Ca) Mg _x Al ₁₀ O _16+x : Eu, Mu (only 0≦x≦1)), etc. As wavelength conversion particles that emit yellow light, α-sialon-based phosphors (such as M _z (Si, Al) ₁₂ (O, N) ₁₆ (provided that 0<z≦2, M is Li, Mg, Ca, Y and rare earth elements other than La and Ce), etc. In addition, there are also yellow-emitting wavelength-converting particles among the above-mentioned green-emitting wavelength-converting particles. Also, for example, yttrium-aluminum-garnet-based phosphors can be replaced by Gd A part of Y shifts the luminous peak wavelength to the long wavelength side, and can emit yellow light. In addition, among these, there are also wavelength conversion particles that can emit orange light. As wavelength conversion particles that emit red light, nitrogen-containing Calcium aluminosilicate (CASN or SCASN) phosphors (such as (Sr, Ca)AlSiN ₃ :Eu), etc. In addition, manganese-activated fluoride-based phosphors (general formula (I) A ₂ [M _1-a Phosphor represented by Mn _a F ₆ ] (but in the above general formula (I), A is at least one selected from the group consisting of K, Li, Na, Rb, Cs and NH ₄ , M It is at least one element selected from the group consisting of Group 4 elements and Group 14 elements, and a satisfies 0<a<0.2)). As a representative example of this manganese-activated fluoride-based phosphor, there is manganese-activated Potassium fluorosilicate phosphor (such as K ₂ SiF ₆ : Mn).

(reflecting member (first reflecting member, second reflecting member and/or third reflecting member)) The reflection member refers to a first reflection member, a second reflection member, and/or a third reflection member. From the viewpoint of the light extraction efficiency of the reflective member in the Z direction, the light reflectance of the light emission peak wavelength of the light emitting element is preferably 70% or more, more preferably 80% or more, and most preferably 90% or more. Furthermore, the reflective member is preferably white. Therefore, it is preferable that a white pigment is contained in a reflective member rather than a base material. The reflective member undergoes a liquid state before hardening. The reflective member can be formed by transfer molding, injection molding, compression molding, infusion, and the like. When the light-emitting device is provided with the first reflective member, the second reflective member, and/or the third reflective member, for example, the third reflective member may be formed by drawing, and the first reflective member and the second reflective member may be formed by potting. .

(base material of reflective member) Resin can be used as the base material of the reflective member, for example, silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, or modified resins thereof. Among them, silicone resin and modified silicone resin have excellent heat resistance and light resistance, so they are preferable. Specific silicone resins include dimethicone resins, phenyl-methyl silicone resins, and diphenyl silicone resins.

(white pigment) White pigments can be used alone titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, One of zirconia and silicon oxide, or a combination of two or more of them. The shape of the white pigment can be appropriately selected, and it can be indefinite or broken, but it is preferably spherical from the viewpoint of fluidity. In addition, the particle size of the white pigment is, for example, about 1 μm to 0.5 μm, but the smaller the better, the better to enhance the light reflection or coating effect. The content of the white pigment in the light-reflective reflective member can be appropriately selected, but from the viewpoints of light reflectivity and liquid viscosity, for example, it is preferably 10 wt% to 80 wt%, more preferably 20 wt% More than 70 wt%, preferably more than 30 wt% and less than 60 wt%. In addition, "wt%" means percentage by weight, and represents the ratio of the weight of the said material with respect to the total weight of a light reflective reflection member.

(covering member 31D) The covering member covers the light extraction surface of the light-emitting element, and diffuses the light of the light-emitting element, or changes it into light having a peak wavelength different from that of the light-emitting element.

(The base material of the covered component) The same material as the base material of the translucent member can be used for the base material of the covering member.

(Diffused Particles of Coated Components) The diffusing particles of the covering member can be made of the same material as that of the diffusing particles of the translucent member.

(light guide member 50) The light guide member is a member that connects a light-emitting element and a light-transmitting member, and guides light from the light-emitting element toward the light-transmitting member. The base material of the light guide member can use silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin or the modified resins. Among them, silicone resin and modified silicone resin are preferable because of their excellent heat resistance and light resistance. Specific silicone resins include dimethicone resins, phenyl-methyl silicone resins, and diphenyl silicone resins. In addition, the base material of the light guide member may contain the same filler and/or wavelength conversion particles as those of the above-mentioned light-transmitting member. Also, the light guide member may be omitted.

(conductive bonding member 60) The so-called conductive bonding member is a member that electrically connects the electrodes of the light emitting element and the first wiring. As the conductive bonding member, bumps of gold, silver, copper, etc., metal paste containing silver, gold, copper, platinum, aluminum, palladium, etc. metal powder and resin binder, tin-bismuth system, tin-copper system can be used , tin-silver series, gold-tin series solders, solders of low-melting point metals, etc. [Industrial availability]

The light-emitting device of one embodiment of the present invention can be used in various display devices such as backlight devices of liquid crystal displays, various lighting appliances, large displays, advertisements or destination guides, projector devices, and even digital cameras, facsimiles, photocopiers, Image reading devices in scanners, etc.

10: Substrate 11: Substrate 11C: Centerline 12: 1st wiring 12A: Wiring main part 12B: Plating 13: 2nd wiring 14: 3rd wiring 15: Via hole 15A, 15B: via holes 16: Concave 16A: Central recess 16B: end recess 18: insulating film 20: Light emitting element 20A: The first light-emitting element 20B: The second light-emitting element 20C: The third light-emitting element 21, 22: Positive and negative electrodes 23: Semiconductor laminate 24: Component substrate 30: Translucent member 30A: the first translucent member 31: base material 31A: The first transparent layer 31B: wavelength conversion layer 31C: The second transparent layer 31D: covered components 31E: The first wavelength conversion layer 31F: The second wavelength conversion layer 32:Wavelength conversion particles 33: layer 33A, 33B: layers 40: 1st reflection member 41: The second reflection member 42: 3rd reflection member 50: Light guide member 60: Conductive bonding member 105: side 111: front 111A: Recess 112: back 113: bottom surface 114: upper surface 120A: Phosphorus-containing nickel plating 120B: gold-plated 120C: nickel plated 120D: palladium plating 120E: The first plating 120F: The second plating 121: convex part 123: Wiring extension 151: 4th wiring 152: Filling components 161: Parallel Department 162: inclined part 201: light extraction surface 201A: Light extraction surface 201B: Light extraction surface 202: side 202A: side 202B: side 203: electrode forming surface 203A: electrode formation surface 203B: electrode formation surface 203C: electrode formation surface 311A: Second Diffusion Particle 311C: The second diffusion particle 311D: Diffuse Particles 311E: The first wavelength conversion particle 311F: Second wavelength conversion particles 312A: base metal 312B: base metal 312C: base metal 312E: base metal 312F: base metal 403: side 404: side 405: side 1000, 1000A, 2000,: light emitting device 2000A～2000H, 3000, 3000A～3000D, 4000 2011A: short side 2011B: short side 2011C: short side 2012B: short side D2: Depth of the center of the concave portion 16 D3: Substrate thickness in Z direction D4: The length of the narrow section in the Y direction D5: The length of the wide part in the Y direction L1: Base material length L2: The length of the first wiring in the Y direction W1, W2: substrate thickness W3, W4: Depth of concave part θ: tilt angle

Fig. 1A is a schematic perspective view of a light emitting device according to the first embodiment. Fig. 1B is a schematic perspective view of the light emitting device of the first embodiment. Fig. 1C is a schematic front view of the light emitting device of the first embodiment. Fig. 2A is a schematic cross-sectional view of line 2A-2A in Fig. 1C. Fig. 2B is a schematic cross-sectional view of line 2B-2B in Fig. 1C. Fig. 3 is a schematic rear view of the light emitting device of the first embodiment. Fig. 4A is a schematic perspective view of a base material, a via hole and a third wiring in the first embodiment. Fig. 4B is a schematic perspective view of the base material, via holes and third wiring of the first embodiment. Fig. 4C is a schematic perspective view of the base material, via holes and third wiring of the first embodiment. Fig. 5 is a schematic bottom view of the light emitting device of the first embodiment. Fig. 6A is a schematic cross-sectional view of the light-emitting device according to Embodiment 1, and an enlarged view showing enlarged areas within dotted lines. Fig. 6B is a schematic cross-sectional view of a modification example of the light-emitting device of Embodiment 1, and an enlarged view showing an enlarged portion within a dotted line. Fig. 7A is a schematic front view of the substrate of the first embodiment. Fig. 7B is a schematic front view of a modification example of the substrate of the first embodiment. Fig. 7C is a schematic front view of a modification example of the substrate of the first embodiment. Fig. 8 is a schematic right side view of the light emitting device of the first embodiment. Fig. 9A is a schematic perspective view of a light emitting device according to Embodiment 2. Fig. 9B is a schematic perspective view of a light emitting device according to Embodiment 2. Fig. 9C is a schematic front view of a light emitting device according to Embodiment 2. Fig. 9D is a schematic bottom view of the light emitting device of the second embodiment. Fig. 10 is a schematic cross-sectional view taken along line 10A-10A of Fig. 9C. Fig. 11 is a schematic rear view of a light emitting device according to Embodiment 2. Fig. 12A is a schematic perspective view of a modified example of the light emitting device of the second embodiment. Fig. 12B is a schematic cross-sectional view of a modified example of the light-emitting device of the second embodiment. Fig. 12C is a schematic cross-sectional view of a modified example of the light-emitting device of the second embodiment. Fig. 12D is a schematic rear view of a modified example of the light emitting device of the second embodiment. Fig. 12E is a schematic cross-sectional view of a modified example of the light-emitting device of the second embodiment. Fig. 12F is a schematic cross-sectional view of a modified example of the light-emitting device of the second embodiment. Fig. 12G is a schematic cross-sectional view of a modified example of the light-emitting device of the second embodiment. Fig. 12H is a schematic cross-sectional view of a modified example of the light-emitting device of the second embodiment. Fig. 12I is a schematic cross-sectional view of a modified example of the light-emitting device of the second embodiment. Fig. 12J is a schematic cross-sectional view of a modified example of the light-emitting device of the second embodiment. Fig. 12K is a schematic front view of the substrate of the second embodiment. Fig. 13A is a schematic perspective view of a light emitting device according to Embodiment 3. Fig. 13B is a schematic perspective view of a light emitting device according to Embodiment 3. Fig. 13C is a schematic front view of a light emitting device according to the third embodiment. Fig. 14A is a schematic sectional view taken along line 14A-14A of Fig. 13C. Fig. 14B is a schematic cross-sectional view of a modified example of the light-emitting device of the third embodiment. Fig. 14C is a schematic cross-sectional view of a modified example of the light-emitting device of the third embodiment. Fig. 15 is a schematic rear view of a light emitting device according to Embodiment 3. Fig. 16 is a schematic bottom view of a light emitting device according to Embodiment 3. Fig. 17A is a schematic front view of a substrate, a first light-emitting element, a second light-emitting element, and a third light-emitting element according to Embodiment 3. 17B is a schematic front view of a modification example of the substrate, the first light-emitting element, the second light-emitting element, and the third light-emitting element of the third embodiment. Fig. 17C is a schematic front view of a modification example of the substrate, the first light-emitting element, the second light-emitting element, and the third light-emitting element of the third embodiment. Fig. 18A is a schematic cross-sectional view of a modified example of the light-emitting device of the third embodiment. Fig. 18B is a schematic cross-sectional view of a modified example of the light-emitting device of the third embodiment. Fig. 19 is a schematic cross-sectional view of a modified example of the light-emitting device of the fourth embodiment.

10: Substrate

11: Substrate

12: 1st wiring

13: 2nd wiring

14: 3rd wiring

15: Via hole

16: Concave

20: Light emitting element

21, 22: Positive and negative electrodes

23: Semiconductor laminate

24: Component substrate

30: Translucent member

31: base material

32:Wavelength conversion particles

33: layer

40: 1st reflection member

50: Light guide member

60: Conductive bonding member

111: front

112: back

121: convex part

151: 4th wiring

152: Filling components

201: light extraction surface

202: side

203: electrode forming surface

1000: light emitting device

Claims (10)

A lighting device comprising: A substrate comprising: a first wiring, a second wiring, a substrate provided with at least one recess, and a via hole located inside the substrate; at least one light emitting element placed on the first wiring and electrically connected to the first wiring; and a first reflective member; and The substrate has a rectangular front, a back opposite to the front, a bottom adjacent to the front and perpendicular to the front, and an upper surface opposite to the bottom; The at least one concave portion is opened on the bottom surface and the back surface of the base material; The first reflection member covers the side surface of the light emitting element and the front surface of the substrate; The first wiring and the second wiring are arranged on the front and the back of the substrate, respectively; The via hole is disposed at a position overlapping with the first portion of the first wiring when viewed from the front, and is electrically connected to the first wiring and the second wiring; The above-mentioned first wiring includes the first part and the second part which are continuous in the longitudinal direction of the above-mentioned rectangular shape when viewed from the front; The width of the above-mentioned first part along the short side direction of the above-mentioned rectangular shape is larger than the width of the above-mentioned second part; The above-mentioned at least one light-emitting element has an electrode; The first portion of the first wiring includes a portion overlapping the electrode and the via hole of the at least one light emitting element in front view. A lighting device comprising: A substrate comprising: a first wiring, a second wiring, a substrate provided with at least one recess, and a via hole located inside the substrate; at least one light emitting element placed on the first wiring and electrically connected to the first wiring; and a first reflective member; and The substrate has a rectangular front, a back opposite to the front, a bottom adjacent to the front and perpendicular to the front, and an upper surface opposite to the bottom; The at least one concave portion is opened on the bottom surface and the back surface of the base material; The first reflection member covers the side surface of the light emitting element and the front surface of the substrate; The first wiring and the second wiring are arranged on the front and the back of the substrate, respectively; The via hole is electrically connected to the first wiring and the second wiring; The above-mentioned first wiring includes the first part and the second part which are continuous in the longitudinal direction of the above-mentioned rectangular shape when viewed from the front; The width of the above-mentioned first part along the short side direction of the above-mentioned rectangular shape is larger than the width of the above-mentioned second part; The above-mentioned at least one light-emitting element has an electrode; The second portion of the first wiring includes a portion overlapping the electrode of the at least one light emitting element in front view. The light-emitting device according to claim 1 or 2, wherein the electrode of the at least one light-emitting element includes a portion overlapping the first portion of the first wiring and the second portion of the first wiring in a front view. overlapping parts. The light-emitting device according to claim 1 or 2, wherein the center of the via hole overlaps with the first part of the first wiring when viewed from the front. The light-emitting device according to claim 1 or 2, wherein the depth of the at least one recess in the direction from the back surface to the front surface of the substrate is deeper on the bottom surface side of the substrate than on the top surface side. The light-emitting device according to claim 1 or 2, wherein the side surfaces in the short direction of the first reflection member and the side surfaces in the short direction of the substrate are substantially on the same plane. The light-emitting device according to claim 1 or 2, further comprising a light-transmitting member covering the above-mentioned light-emitting element; The first reflective member covers the side surface of the translucent member. The light-emitting device according to claim 1 or 2, wherein the first reflective member has side surfaces in the longitudinal direction on the bottom side and the top side of the substrate; Among the side surfaces of the first reflective member, the side surface on the bottom side of the base material and the side surface on the upper surface side of the base material are directed toward the inside of the light-emitting device in the direction from the back surface to the front surface. tilt. The light-emitting device according to claim 1 or 2, wherein the via hole is arranged at a position that does not overlap the at least one concave portion in a rear view. The light-emitting device according to claim 1 or 2, wherein the at least one concave portion is provided at a position overlapping with the second portion of the first wiring when viewed from the front.