JP3792268B2 - Method for manufacturing a chip type light emitting device - Google Patents

Method for manufacturing a chip type light emitting device Download PDF

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Publication number
JP3792268B2
JP3792268B2 JP12367995A JP12367995A JP3792268B2 JP 3792268 B2 JP3792268 B2 JP 3792268B2 JP 12367995 A JP12367995 A JP 12367995A JP 12367995 A JP12367995 A JP 12367995A JP 3792268 B2 JP3792268 B2 JP 3792268B2
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Prior art keywords
emitting device
light emitting
surface
light
substrate
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JPH08314395A (en )
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宏基 石長
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ローム株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Description

【0001】 [0001]
【産業上の利用分野】 BACKGROUND OF THE INVENTION
本発明は発光源としてのLEDチップを使用したチップタイプ発光装置に関する。 The present invention relates to a chip type light emitting device using an LED chip as a light emitting source.
【0002】 [0002]
【従来の技術】 BACKGROUND OF THE INVENTION
従来、発光源としてのLEDチップを使用した発光装置として、種々のタイプの装置が提案されている。 Conventionally, as a light-emitting device using an LED chip as a light emitting source, various types of devices have been proposed.
とりわけ、図4に示すような、不透明樹脂から成り平坦な底面とこの底面から装置の前方、即ち同図中上方、に向けて広がるように傾斜された傾斜面とが形成されたケーシング11と、ケーシング11の底面に形成され発光源としてのLEDチップ12がその裏面電極を介して接続されたパッド部とこのパッド部から傾斜面及び外面に沿って延出された部分とから成る第1電極配線13と、第1電極配線13に対向するようにケーシングの底面に形成されLEDチップの上面電極にワイヤリードを介して接続された先端部とこの先端部から傾斜面及び外面に沿って延出された部分から成る第2電極配線14と、ケーシング11の底面と傾斜面により画成されたキャビテイ内に充填された透明樹脂15と、から成るチップタイプ発光装置が知ら Especially, as shown in FIG. 4, a flat bottom made of opaque resin and the casing 11 to the front, i.e. in the figure upwards, and tilted inclined surface so as to spread toward the formed device from the bottom, formed on the bottom surface of the casing 11 LED chip 12 is connected to the pad part through the back electrode and the inclined surface and the first electrode wiring consisting of a rolled out portion along the outer surface of the pad portion of the light emitting source 13, extends along from the front end portion and the bottom surface formed LED connected tip top electrode through the wire leads of the chip of the casing on the inclined surface and an outer surface so as to face the first electrode wiring 13 and a second electrode wiring 14 consisting of portions, the bottom surface and the inclined surface transparent resin 15 filled in the cavity which is defined by the casing 11, the chip-type light emitting device is known consisting of ている。 To have.
【0003】 [0003]
この種の発光装置では、ケーシング11の傾斜面はLEDチップから発生された光の装置前方への放射を高めるようにNiやAg等によるメッキが施されて反射面が形成されている。 In this type of light emitting device, the inclined surface of the casing 11 is reflective surface is decorated with plated with Ni and Ag or the like so as to increase the radiation to the device in front of the light generated from the LED chip is formed.
このような発光装置では、LEDチップ12から発生された光は、その一部はLEDチップから透明樹脂15を介して直接または底面に反射されて装置の前方に放射されるが、より多くの部分はメッキ処理が成された傾斜面上の反射面により反射されることによりやはり前方に放射される。 In such a light emitting device, light is generated from the LED chip 12, the a part is emitted to the front of the device is reflected directly or bottom through the transparent resin 15 from the LED chips, more of It is also emitted to the front by being reflected by the reflecting surface on the inclined surface plating is performed.
【0004】 [0004]
【発明が解決しようとする課題】 [Problems that the Invention is to Solve
しかし、上述のような従来の発光装置では、ケーシング11の傾斜面での光の反射は、上述のように、メッキ処理等により形成された反射面で反射されることにより行われているので、前方に放射される光量に反射による損失が不可避的に発生する。 However, in the conventional light-emitting device as described above, reflection of light at the inclined surface of the casing 11, as described above, because they are made by being reflected by the reflecting surface formed by plating or the like, loss due to reflection on the amount of light that is radiated forward is inevitably generated.
【0005】 [0005]
このような反射による光量の損失は、反射面で光の一部に反射時に吸収が生じることや、反射面に微細な凹凸が存在することにより光の一部が不規則に乱反射されること、等によるものと考えられる。 Such light amount loss due to reflection, the reflecting surface and the absorption upon reflection in a part of the light occurs in, a part of the light is irregularly reflected irregularly by the presence of fine irregularities on the reflective surface, It is believed to be due to equal.
このため、このタイプの発光装置で、装置から発生される光量、即ち発光効率、を一定値以上に増大させることには構造上の困難があった。 Thus, in this type of light emitting device, the amount of light generated from the device, that is, to increase luminous efficiency, a predetermined value or more had difficulties in construction.
【0006】 [0006]
従って、本発明の目的は、発光効率を向上させたチップタイプ発光装置を得ることである。 Accordingly, an object of the present invention is to obtain a chip-type light emitting device with improved luminous efficiency.
【0007】 [0007]
【課題を解決するための手段】 In order to solve the problems]
この課題を解決するための本発明は、第1及び第2の電極配線が形成された基板にLEDチップを搭載する工程と、前記基板上に、傾斜された内周面を有するリフレクタを装着する工程と、前記リフレクタの傾斜面に離型剤を塗布する工程と、前記離型剤を塗布した状態で、透明樹脂を前記基板の表面と前記リフレクタの傾斜面とで画成されたキャビティ内に注入し硬化させる工程を含むことを特徴とするチップタイプ発光装置の製造方法である。 The present invention for solving this problem, the mounting comprising the steps of mounting the first and second LED chip to a substrate on which the electrode wiring is formed, on the substrate, a reflector having an inner peripheral surface which is inclined a step, a step of applying a release agent to the inclined surface of the reflector, while applying the release agent, in the was defined a transparent resin with an inclined surface of the reflector and the surface of said substrate cavity comprise the step of injecting hardened is a manufacturing method of a chip type light emitting device according to claim.
【0008】 [0008]
【作用および効果】 [Action and effect]
チップタイプ発光装置を、LEDチップと、LEDチップに設けられた電極にそれぞれ接続された第1及び第2の電極配線が形成された基板と、傾斜された内周面を有するリフレクタと、基板とリフレクタの内周面により画成されたキャビテイ内にLEDチップを封止するように充填された透明樹脂と、から成り、透明樹脂はLEDチップから発生された光が全反射するようにリフレクタの内周面に対して剥離状に形成された外周面を有するように構成したので、LEDチップから発生された光は、その多くの部分が透明樹脂の外周面、即ち透明樹脂の空気との界面、で全反射されて装置の前方に向けて放射される。 The chip type light emitting device, an LED chip, a substrate on which the first and second electrode lines are formed which are connected respectively to the electrodes provided on the LED chip, a reflector having an inner peripheral surface which is inclined, and the substrate made, and filled transparent resin so as to seal the LED chip in a cavity which is defined by the inner peripheral surface of the reflector, a transparent resin, among the light generated from the LED chip of the reflector so as to totally reflect since it is configured to have an outer peripheral surface formed in the peeling shape with respect to the circumferential surface, the light generated from the LED chip, the interface between the outer peripheral surface of a number of partial transparent resin, i.e., a transparent resin air, in is emitted toward the front of the totally reflected by device.
【0009】 [0009]
このように、光の反射に全反射を利用するため、LEDから発生された光の反射面での吸収や乱反射による損失をほとんど生じることなく、光をより効率的に取り出すことができ、以て、発光効率を向上させることができる。 Thus, in order to utilize the total reflection on the reflection of light, without hardly causing a loss due to absorption and irregular reflection on the reflection surface of the generated light from the LED, it is possible to extract light more efficiently, Te following , thereby improving the luminous efficiency.
【0010】 [0010]
【実施例】 【Example】
次に、本発明によるチップタイプ発光装置について図1乃至図3を参照しながら実施例に従い詳細に説明する。 Will now be described in detail in accordance with examples with reference to FIGS. 1 to 3 for the chip type light emitting device according to the present invention.
本発明による発光装置は、図1に示すように、上面及び下面に電極がそれぞれ形成された発光素子としてのLEDチップ1と、LEDチップ1を搭載する基板2と、基板2の表面に導電性材料により形成されLEDチップ1が裏面電極にて電気的に接続固定された第1の電極配線3と、LEDチップ1の上面電極に例えばAuから成るワイヤリード4を介して電気的に接続された第2の電極配線5と、不透明な樹脂から成り基板2上に装着されて基板2の表面と協働して内方にキャビテイを形成する傾斜面が形成されたリフレクタ6と、基板2に搭載されたLEDチップ1並びにワイヤリード4をを封止するようにキャビテイ内に充填された透明樹脂7と、から成っている。 The light emitting device according to the present invention, as shown in FIG. 1, the LED chip 1 serving as a light-emitting element electrodes on upper and lower surfaces are formed respectively, and the substrate 2 for mounting the LED chip 1, the conductive surface of the substrate 2 a first electrode wiring 3 LED chip 1 is formed of a material is electrically connected and fixed at the rear surface electrode, which is electrically connected to the upper electrode of the LED chip 1 via the wire leads 4 made of for example Au and the second electrode wiring 5, a reflector 6 that inclined surfaces are formed to be mounted on the substrate 2 to form a cavity inward in cooperation with the surface substrate 2 made of an opaque resin, mounted on the substrate 2 the LED chip 1 and the transparent resin 7 filled in the cavity to seal the wire leads 4 are, consist.
【0011】 [0011]
基板2は、図2に示すように、白色状のBTレジンガラス布基材から成りその対向端面には円弧状の切欠き2a,2aが形成されている。 Substrate 2, as shown in FIG. 2, at its opposing end faces made white like BT resin glass cloth base arcuate cutout 2a, 2a are formed. これらの切欠き2a,2aの表面を介して1及び第2電極配線3、5は基板2の表面側から裏面側に向けて延出されている。 These notches 2a, 1 and the second electrode wiring 3, 5 via the surface of 2a is extended toward the back side from the front surface side of the substrate 2. 第1電極配線3はその先端部に矩形状のパッド部3aが形成されており、このパッド部3a上にLEDチップ1が搭載されている。 The first electrode wiring 3 a rectangular pad portion 3a is formed at its distal end, LED chip 1 is mounted on the pad portions 3a.
【0012】 [0012]
リフレクタ6は白色状の液晶ポリマから例えば射出成形により形成されたものであり、基板2に搭載されたLEDチップ1から発生された光が発光装置の前方へ照射されるように装置前方、即ち図1中上方、に向けて広がるように傾斜した4つの傾斜面を有している。 The reflector 6 has been formed by injection molding, for example, from a white-like liquid crystal polymers, the front of the device so that the light generated from the LED chips 1 mounted on the substrate 2 is irradiated to the front of the light emitting device, i.e. FIG. It has four inclined surface inclined so as to spread toward the 1 in the upper. このようなリフレクタ6の基板2上への装着は、熱硬化性の接着樹脂を基板2とリフレクタ6との間に塗布し及び加熱硬化させて接着することにより行える。 Such mounting onto the substrate 2 of the reflector 6, a thermosetting adhesive resin performed by bonding a coating to and cured by heating between the substrate 2 and the reflector 6.
【0013】 [0013]
透明樹脂7としては従来と同様にエポキシ樹脂を使用できる。 The transparent resin 7 may be used similarly to the conventional epoxy resins. 透明樹脂7は、基板2上にLEDチップ1の搭載と共にワイヤボンデイング等の処理を行った後リフレクタ6を装着した状態で、基板2の表面とリフレクタ6の傾斜面とで画成されたキャビテイ内に注入するのだが、注入に先だってリフレクタ6の傾斜面に離型剤を塗布しておく。 Transparent resin 7 in a state where the reflector 6 is mounted after the process of wire bonding or the like with mounting of the LED chip 1 on the substrate 2, the cavity which is defined by the inclined surface of the surface and the reflector 6 of the substrate 2 it injected into, but keep applying a release agent to the inclined surface of the prior reflector 6 for injection. このような離型剤としては例えばシリコン系のものを適用でき、また塗布は噴霧等により簡易に実施できる。 As such a release agent can be applied to those of silicon for example, also applied can be carried out simply by spraying or the like.
【0014】 [0014]
このようにリフレクタ6の傾斜面に離型剤を塗布した状態で透明樹脂をキャビテイ内に注入しこれを硬化させると、図3に示すように、透明樹脂7とリフレクタ6との界面に剥離が生じ、両者間には微小量、例えば数μm程度、のギャップGが得られる。 When implanted in this way the transparent resin in a state of applying a release agent to the inclined surface of the reflector 6 in the cavity is cured, as shown in FIG. 3, the peeling at the interface between the transparent resin 7 and the reflector 6 It occurs, a small amount is between them, for example, several μm or so, the gap G is obtained. ギャップGは空気により満たされることになるが、透明樹脂7の界面にはギャップGの存在により透明樹脂の空気に対する反射率に応じた全反射面が形成されることになる。 Gap G becomes to be filled with air, so that the total reflection surface in accordance with the reflectivity for the air of the transparent resin by the presence of the gap G is formed at the interface of the transparent resin 7. この場合、リフレクタ6の傾斜面を凹凸を除去した鏡面状に形成しておけば、透明樹脂の注入及び硬化により良好かつ一様な状態の剥離が得られ、より完全に近い全反射面を形成することができる。 In this case, by forming the mirror surface to remove the irregularities of the inclined surface of the reflector 6, obtained flaking of good and uniform state by injection and curing of the transparent resin, forming a more complete nearly total reflection surface can do.
【0015】 [0015]
本発明による発光装置は、大判の基板材を使用して、メッキ工程等により複数の基板を形成すると共にLEDチップを搭載及び電気的接続をし、離型剤を塗布したリフレクタを装着した状態で透明樹脂を各キャビテイ内に注入及び硬化させた後、例えばエキスパンドテープ及びダイシングブレードを用いて個別の発光装置に分割することにより、量産的に製造できる。 The light emitting device according to the present invention uses a large-sized substrate material, in a state in which the LED chip mounting and the electrical connection, fitted with a reflector coated with a release agent to form a plurality of substrates by a plating process or the like after the transparent resin is injected and cured in each cavity, for example, by splitting into individual light emitting device using the expand tape and the dicing blade can mass-produced.
【0016】 [0016]
本発明の発光装置では、LEDチップから発生された光は、リフレクタ6から剥離された透明樹脂7の界面若しくは剥離面で全反射されて、高い効率で発光装置の前方へ放射される。 In the light emitting device of the present invention, the light generated from the LED chip is totally reflected by the interface or the release surface of the transparent resin 7 is peeled from the reflector 6, it is radiated toward the front of the light emitting device with high efficiency.
このように、本発明の発光装置は、光の放射を全反射を利用して行うので、本発明者の研究によれば、基板面から約10cmの距離における中心輝度で同等の従来の装置に対して約20%増大させることが可能であることが確認された。 Thus, the light emitting device of the present invention, since the light emission performed by utilizing total reflection, according to the present inventors' study, the comparable prior art device at the center luminance at a distance of about 10cm from the substrate surface it was confirmed to be possible to increase by about 20% against.
【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS
【図1】本発明のチップタイプ発光装置の断面図である。 1 is a cross-sectional view of a chip type light-emitting device of the present invention.
【図2】LEDチップを搭載した基板の平面図である。 2 is a plan view of a substrate mounted with LED chips.
【図3】透明樹脂のリフレクタ傾斜面から剥離されたギャップを示す部分断面図である。 3 is a partial sectional view showing a gap that is peeled from the reflector inclined surface of the transparent resin.
【図4】従来の発光装置の断面図である。 4 is a cross-sectional view of a conventional light emitting device.
【符号の説明】 DESCRIPTION OF SYMBOLS
1 LEDチップ2 基板3 第1電極配線4 リードワイヤ5 第2電極配線6 リフレクタ7 透明樹脂 1 LED chip 2 substrate 3 first electrode wire 4 lead wires 5 second electrode wire 6 reflector 7 transparent resin

Claims (1)

  1. 第1及び第2の電極配線が形成された基板にLEDチップを搭載する工程と、 A step of mounting the LED chip to the substrate on which the first and second electrode lines are formed,
    前記基板上に、傾斜された内周面を有するリフレクタを装着する工程と、 On the substrate, a step of mounting a reflector having an inner peripheral surface which is inclined,
    前記リフレクタの傾斜面に離型剤を塗布する工程と、 A step of applying a release agent to the inclined surface of the reflector,
    前記離型剤を塗布した状態で、透明樹脂を前記基板の表面と前記リフレクタの傾斜面とで画成されたキャビティ内に注入し硬化させる工程を含むことを特徴とするチップタイプ発光装置の製造方法。 Production of the while applying a release agent, a chip type light emitting device which comprises a step of injecting curing a transparent resin on the inclined surface and image made a cavity in said reflector and the surface of the substrate Method.
JP12367995A 1995-05-23 1995-05-23 Method for manufacturing a chip type light emitting device Expired - Fee Related JP3792268B2 (en)

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US6250775B1 (en) * 1999-12-09 2001-06-26 Marpole International, Inc. Light-emitting diode display systems and methods with enhanced light intensity
JP4125848B2 (en) * 1999-12-17 2008-07-30 ローム株式会社 Case with a chip-type light-emitting device
WO2003056636A1 (en) * 2001-12-29 2003-07-10 Hangzhou Fuyang Xinying Dianzi Ltd. A led and led lamp
CA2523544A1 (en) 2003-04-30 2004-11-18 Cree, Inc. High powered light emitter packages with compact optics
KR101104023B1 (en) * 2004-07-26 2012-01-06 엘지이노텍 주식회사 Led package
JP2009527071A (en) 2005-12-22 2009-07-23 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Lighting device
WO2007127029A3 (en) 2006-04-24 2008-01-17 Cree Inc Side-view surface mount white led
JP5407116B2 (en) * 2007-06-22 2014-02-05 豊田合成株式会社 The light-emitting device
JP2011066302A (en) * 2009-09-18 2011-03-31 Showa Denko Kk Semiconductor light emitting device, and method of manufacturing the same
WO2012136579A1 (en) * 2011-04-04 2012-10-11 Ceramtec Gmbh Ceramic printed circuit board comprising an al cooling body
JP2015153882A (en) * 2014-02-13 2015-08-24 日亜化学工業株式会社 Light-emitting device and its manufacturing method

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