JP3247436B2 - Light emitting device and method of manufacturing the same - Google Patents
Light emitting device and method of manufacturing the sameInfo
- Publication number
- JP3247436B2 JP3247436B2 JP21129492A JP21129492A JP3247436B2 JP 3247436 B2 JP3247436 B2 JP 3247436B2 JP 21129492 A JP21129492 A JP 21129492A JP 21129492 A JP21129492 A JP 21129492A JP 3247436 B2 JP3247436 B2 JP 3247436B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- land portion
- emitting element
- resin
- land
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、発光装置およびその製
造方法に関する。The present invention relates to a light emitting device and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来の発光装置としては、例えば特開平
１−２８３８８３号のような発光装置があった。図６
（Ａ）（Ｂ）（Ｃ）において、１は被メッキ性を有する
熱可塑性樹脂製の反射ケース（パッケージ）であり、そ
の表面に凹部２が形成されている。2. Description of the Related Art As a conventional light emitting device, for example, there has been a light emitting device as disclosed in Japanese Patent Application Laid-Open No. 1-288383. FIG.
In (A), (B) and (C), reference numeral 1 denotes a reflective case (package) made of a thermoplastic resin having plating property, and a concave portion 2 is formed on the surface thereof.
【０００３】また、３，４，５に示す部分はＣｕ／Ｎｉ
／Ａｇメッキが施されており、該メッキ３，４，５はス
ルーホールを通して６，７の電極用メッキ端子と接続さ
れている。The portions indicated by reference numerals 3, 4, and 5 are Cu / Ni
/ Ag plating is applied, and the platings 3, 4, and 5 are connected to electrode plating terminals 6 and 7 through through holes.
【０００４】メッキランド３では、発光素子としての発
光ダイオードチップ８がＡｇペースト９により固定さ
れ、Ａｕ線１１によりメッキランド４と結線されてい
る。In the plating land 3, a light emitting diode chip 8 as a light emitting element is fixed by an Ag paste 9 and connected to the plating land 4 by an Au wire 11.
【０００５】なお、メッキランド３，４の間には、約
０．３ｍｍの幅で下地の熱可塑性樹脂が露出されてい
る。この部分が立体絶縁パターンとなっている。The underlayer thermoplastic resin is exposed between the plating lands 3 and 4 with a width of about 0.3 mm. This part is a three-dimensional insulating pattern.
【０００６】反射ケース１の凹部２は、発光ダイオード
の保護、光の取り出し効率の向上のために透明エポキシ
樹脂１２で封止される。The concave portion 2 of the reflective case 1 is sealed with a transparent epoxy resin 12 for protecting the light emitting diode and improving light extraction efficiency.
【０００７】使用時には、電極用メッキ端子６から７へ
数１０ｍＡの電流を流すことにより、発光ダイオードチ
ップ８が発光し、可視発光ランプとして作動する。In use, when a current of several tens of mA is applied to the electrode plating terminals 6 to 7, the light emitting diode chip 8 emits light and operates as a visible light emitting lamp.
【０００８】[0008]
【発明が解決しようとする課題】従来の発光装置におい
ては、発光ダイオードチップ８と裏面電極用メッキ端子
６，７との間の電気的接続は、反射ケース１の表面に形
成された立体配線のメッキ層３，４，５を通して行われ
る。このメッキ層３，４，５をメッキ法で立体配線形成
するには、全面にメッキした後に、必要なパターン形
成部分にレジストでマスキングを行い、フォトリソ工
程、エッチング工程を順次経ることでパターンを残して
不要部分、すなわち絶縁ラインとなる部分のメッキを除
去する、パターン形成部分のみを、触媒等を塗布する
ことでメッキ可能な状態にする、といった方法のいずれ
かを採るのが一般的である。しかし、いずれの手法にお
いてもパターンを立体的に形成するためには、マスキン
グを立体的に行わなければならず、高度な技術が要求さ
れる。In the conventional light emitting device, the electrical connection between the light emitting diode chip 8 and the plating terminals 6 and 7 for the back electrode is made by three-dimensional wiring formed on the surface of the reflection case 1. This is performed through the plating layers 3, 4, and 5. In order to form the three-dimensional wirings by plating, the plating layers 3, 4, and 5 are plated on the entire surface, then masked with a resist on a necessary pattern forming portion, and the pattern is left by sequentially performing a photolithography process and an etching process. It is common to employ any of the following methods: removing unnecessary portions, that is, plating of portions that become insulating lines; and applying a catalyst or the like to only a pattern forming portion so that plating is possible. However, in order to form a pattern three-dimensionally in any of the methods, masking must be performed three-dimensionally, and advanced technology is required.
【０００９】本発明は、上記課題に鑑み、製造工程を簡
略化し得る発光装置およびその製造方法の提供を目的と
する。In view of the above problems, an object of the present invention is to provide a light emitting device capable of simplifying a manufacturing process and a method of manufacturing the same.
【００１０】[0010]
【課題を解決するための手段】本発明による課題解決手
段は、図１の如く、パッケージ２１の上面に、発光素子
２２を搭載する第一ランド部２７と、発光素子２２にボ
ンディングワイヤ２９を介して結線される第二ランド部
３１とが形成され、パッケージ２１の裏面に、外部接続
用の裏面端子２８，３２が形成され、前記第一ランド部
２７に発光素子２２が搭載され、発光素子２２と第二ラ
ンド部３１とがボンディングワイヤ２９にて結線され、
発光素子２２およびボンディングワイヤ２９が透光性樹
脂２３にて樹脂封止された発光装置において、前記パッ
ケージ２１は、上面が第一ランド部２７とされかつ裏面
が第一裏面端子２８とされた高導電性の第一導電樹脂体
２４と、上面が第二ランド部３１とされかつ裏面が第二
裏面端子３２とされた高導電性の第二導電樹脂体２５
と、該両導電樹脂体２４，２５の間に介在される絶縁樹
脂体２６とからなるものである。SUMMARY in accordance with the present onset bright SUMMARY OF THE INVENTION are, as in FIG. 1, the upper surface of the package 21, the first land portion 27 for mounting the light emitting element 22, the bonding wire 29 to the light emitting element 22 And a second land portion 31 connected to the first land portion 27 is formed. On the back surface of the package 21, rear surface terminals 28 and 32 for external connection are formed. The light emitting element 22 is mounted on the first land portion 27. The element 22 and the second land portion 31 are connected by a bonding wire 29,
In the light emitting device in which the light emitting element 22 and the bonding wire 29 are resin-sealed with the translucent resin 23, the package 21 has a high height in which the top surface is the first land portion 27 and the back surface is the first back terminal 28. A conductive first conductive resin body 24 and a highly conductive second conductive resin body 25 having an upper surface as a second land portion 31 and a rear surface as a second back surface terminal 32
When, also for a is Do that from an insulating resin material 26 interposed between the both conductive resin material 24 and 25.
【００１１】そして、図２（Ａ）〜（Ｃ）の如く、パッ
ケージ２１の上面に凹部４１が形成され、第一ランド部
２７および第二ランド部３１は、前記凹部４１の底面部
に配置され、発光素子２２の搭載・結線後、凹部４１の
内部が透光性樹脂２３にて樹脂封止されている。[0011] Then, as shown in FIG. 2 (A) ~ (C) , recesses 41 on the upper surface of the path Tsu <br/> cage 21 is formed, the first land portion 27 and the second land portion 31, the concave portion 41 disposed on the bottom portion, after mounting, connection of the light - emitting element 22, within the recess 41 is sealed with a resin in the light-transmitting resin 23.
【００１２】さらに、第一ランド部２７、第二ランド部
３１および裏面端子２８，３２に、接続用の金属膜３３
が形成されている。 Further , a metal film 33 for connection is provided on the first land 27, the second land 31, and the back terminals 28 and 32.
There has been formed.
【００１３】また、図３の如く、パッケージ２１の上面
に、発光素子２２を搭載する第一ランド部２７と、発光
素子２２にボンディングワイヤ２９を介して結線される
第二ランド部３１とが形成され、パッケージ２１の裏面
に、外部接続用の裏面端子２８，３２が形成され、前記
第一ランド部２７に発光素子２２が搭載され、発光素子
２２と第二ランド部３１とがボンディングワイヤ２９に
て結線され、発光素子２２およびボンディングワイヤ２
９が透光性樹脂２３にて樹脂封止された発光装置におい
て、前記パッケージ２１は、上面が第一ランド部２７と
されかつ裏面が第一裏面端子２８とされた高導電性の第
一樹脂体２４と、上面に第二ランド部３１とされかつ裏
面に第二裏面端子３２が形成される第二樹脂体２５と、
該両樹脂体２４，２５の間に介在される絶縁樹脂体２６
とからなり、前記第二樹脂体２５に、ボンディングワイ
ヤ２９と接続するための金属部材４５が露出して埋め込
まれたものである。 Further, as shown in FIG. 3, the upper surface of the package 21, the first land portion 27 for mounting the light emitting element 22, and the second land portion 31 which is connected via a bonding wire 29 to the light emitting element 22 is formed Then, the back surface terminals 28 and 32 for external connection are formed on the back surface of the package 21, the light emitting element 22 is mounted on the first land 27, and the light emitting element 22 and the second land 31 are connected to the bonding wire 29. The light emitting element 22 and the bonding wire 2
In the light emitting device in which 9 is resin-sealed with a translucent resin 23, the package 21 is a highly conductive first resin having a first land portion 27 on the upper surface and a first back terminal 28 on the back surface. A second resin body 25 having a second land portion 31 formed on the upper surface and a second back terminal 32 formed on the back surface;
Insulating resin body 26 interposed between the two resin bodies 24 and 25
It consists of a, prior Symbol second resin member 25, in which the metal member 45 for connecting the bonding wire 29 is embedded is exposed.
【００１４】また、図４、５の如く、パッケージ２１の
上面に、発光素子２２の第一電極４６に接続される第一
ランド部２７と、発光素子２２の第二電極４７に接続さ
れる第二ランド部３１とが形成され、パッケージ２１の
裏面に、外部接続用の裏面端子２８，３２が形成され、
前記第一ランド部２７および第二ランド部３１に発光素
子２２が搭載され、発光素子２２が透光性樹脂２３にて
樹脂封止された発光装置において、前記パッケージ２１
は、上面が第一ランド部２７とされかつ裏面が第一裏面
端子２８とされた高導電性の第一導電樹脂体２４と、上
面が第二ランド部３１とされかつ裏面が第二裏面端子３
２とされた高導電性の第二導電樹脂体２５と、該両導電
樹脂体２４，２５の間に介在される絶縁樹脂体２６とか
らなり、光の放出が発光素子２２の上面からなされるよ
うに第一電極４６および第二電極４７の両方とも発光素
子２２の裏面に並設され、各電極４６，４７と各ランド
部２７，３１とは、電極４６，４７および各ランド部２
７，３１のいずれか一方に予め形成された導電バンプ５
７を介して接続されたものである。 Further, as shown in FIG. 4 and 5, the upper surface of the package 21, the is connected to the first land portion 27 connected to the first electrode 46 of the light emitting element 22, the second electrode 47 of the light emitting element 22 Two land portions 31 are formed, and on the back surface of the package 21, back surface terminals 28 and 32 for external connection are formed.
In the first land portion 27 and the light emitting element 22 to the second land portion 31 is mounted, a light-emitting device emitting element 22 is sealed with a resin in translucent resin 23, the package 21
A first conductive resin body 24 having a first land portion 27 on the upper surface and a first back terminal 28 on the back surface; a second land portion 31 on the top surface and a second back terminal on the back surface. 3
The light-emitting element 22 is composed of a highly conductive second conductive resin body 25 and an insulating resin body 26 interposed between the two conductive resin bodies 24 and 25, and emits light from the upper surface of the light emitting element 22. Yo
As described above , both the first electrode 46 and the second electrode 47 are arranged in parallel on the back surface of the light emitting element 22, and the electrodes 46, 47 and the lands 27, 31 are connected to the electrodes 46, 47 and the lands 2 respectively.
A conductive bump 5 formed in advance on one of 7, 31;
7 are connected.
【００１５】上記の発光装置の製造方法は、上面が第一
ランド部２７とされかつ裏面が第一裏面端子２８とされ
た高導電性の第一導電樹脂体２４と、上面が第二ランド
部３１とされかつ裏面が第二裏面端子３２とされた高導
電性の第二導電樹脂体２５と、これらの間に介在される
絶縁樹脂体２６とを、一体的に金型成形してパッケージ
２１を形成し、パッケージ２１の上面に、発光素子２２
をその第一電極４６が第一ランド部２７に接続し、第二
電極４７が第二ランド部３１に接続するよう搭載し、発
光素子２２の周囲を透光性樹脂２３にて樹脂封止するも
のである。The above-described method of manufacturing a light emitting device comprises the following steps: a first conductive resin body 24 having an upper surface as a first land portion 27 and a lower surface as a first back terminal 28; The package 21 is formed by integrally molding a highly conductive second conductive resin body 25 having a back surface 31 as a second back surface terminal 32 and an insulating resin body 26 interposed therebetween. Is formed, and the light emitting element 22
Is mounted such that the first electrode 46 is connected to the first land 27 and the second electrode 47 is connected to the second land 31, and the periphery of the light emitting element 22 is resin-sealed with the translucent resin 23. Things.
【００１６】[0016]
【作用】上記課題解決手段において、上面が第一ランド
部２７とされかつ裏面が第一裏面端子２８とされた高導
電性の第一導電樹脂体２４と、上面が第二ランド部３１
とされかつ裏面が第二裏面端子３２とされた高導電性の
第二導電樹脂体２５と、これらの間に介在される絶縁樹
脂体２６とによりパッケージ２１を形成し、パッケージ
２１の上面に、発光素子２２をその第一電極４６が第一
ランド部２７に接続し、第二電極４７が第二ランド部３
１に接続するよう搭載し、発光素子２２の周囲を透光性
樹脂２３にて樹脂封止する。In [action] above Symbol challenges solution, the upper surface of the first land portion 27 and is, high conductivity of the first conductive resin member 24, which is the back surface first back terminal 28, the upper surface is the second land portion 31
To the to and the second conductive resin body 25 of the high-conductive back surface is a second back terminal 32, by an insulating resin body 26 which is interposed between the form package 21, the upper surface of the package 21, The light emitting element 22 has its first electrode 46 connected to the first land 27 and the second electrode 47 connected to the second land 3.
1, and the periphery of the light emitting element 22 is resin-sealed with a translucent resin 23.
【００１７】そうすると、従来のように上面の発光素子
２２と裏面の裏面端子２８，３２との電気的接続を確保
するために、パッケージのスルーホール等の表面に立体
配線を施す必要が無くなり、工程が簡素化、簡略化され
る。Then, in order to secure the electrical connection between the light emitting element 22 on the upper surface and the rear terminals 28 and 32 on the rear surface, it is not necessary to provide a three-dimensional wiring on the surface such as a through hole of the package as in the prior art. Is simplified and simplified.
【００１８】また、パッケージ２１の成形時に金属部材
４５をインサートして成形するだけで、上面の発光素子
２２と裏面の裏面端子２８，３２との電気的導通を金属
部材４５にて行うことができる。そうすると、ボンディ
ング用のランド部３１に金属メッキ等を施さなくても、
ボンディングワイヤの付着が容易（ボンディング性）と
なる。 Further, just molded by insert metal member 45 at the time of molding the package 21, the electrical connection between the light emitting element 22 and the back surface of the back terminal 28, 32 of the upper surface can be carried out in the metal member 45 . Then, even if metal plating or the like is not applied to the bonding land portion 31,
Adhesion of the bonding wire becomes easy (bonding property).
【００１９】また、発光素子２２と各ランド部２７，３
１とを導電バンプ５７を用いて接続すると、ボンディン
グワイヤ等を用いた接続が不要となり、ワイヤ断線等の
不良の発生が無くなり、製品の信頼性が向上する。[0019] In addition, a light-emitting element 22 each land portion 27,3
Connecting 1 and using the conductive bumps 57, it becomes unnecessary connection using the bonding wire Ya like, there is no occurrence of defects such as wire Ya sectional line, thereby improving reliability of the product.
【００２０】[0020]
【実施例】（第一実施例）図１は本発明の第一実施例の
発光装置を示す断面図である。本実施例の発光装置は、
パッケージとしての樹脂基板２１の上面に発光素子２２
が搭載および結線され、さらに発光素子２２の保護と外
部量子効率の向上を目的として発光素子２２の周囲が透
光性樹脂２３にて樹脂封止されたものである。FIG. 1 is a sectional view showing a light emitting device according to a first embodiment of the present invention. The light emitting device of this embodiment is
A light emitting element 22 is provided on an upper surface of a resin substrate 21 as a package.
Are mounted and connected, and the periphery of the light emitting element 22 is resin-sealed with a translucent resin 23 for the purpose of protecting the light emitting element 22 and improving external quantum efficiency.
【００２１】前記樹脂基板２１は、高導電性樹脂からな
る第一導電樹脂体２４と、同じく第二導電樹脂体２５
と、該両導電樹脂体２４，２５の間に介在される絶縁樹
脂体２６とが、金型成形時に一体形成（二色成形）され
てなる。The resin substrate 21 has a first conductive resin body 24 made of a highly conductive resin and a second conductive resin body 25
And an insulating resin body 26 interposed between the conductive resin bodies 24 and 25 are integrally formed (two-color molding) at the time of molding.
【００２２】前記第一導電樹脂体２４および第二導電樹
脂体２５は、金属粉やカーボンなどの導電性物質を樹脂
に混入して導電性を持たせたものや、ポリピロール樹脂
やポリアニリン等のように樹脂素材自体が導電性を有す
るものが用いられる。これら導電樹脂体２４，２５の抵
抗率は、発光素子２２の駆動電流等を考慮すると、１Ω
・ｃｍ以下が望ましい。The first conductive resin body 24 and the second conductive resin body 25 are made by mixing a conductive substance such as metal powder or carbon into a resin to have conductivity, or a material such as polypyrrole resin or polyaniline. The resin material itself has conductivity. The resistivity of the conductive resin bodies 24 and 25 is 1 Ω in consideration of the driving current of the light emitting element 22 and the like.
-Cm or less is desirable.
【００２３】前記第一導電樹脂体２４の上面は、発光素
子２２を搭載する第一ランド部（搭載用ランド部）２７
とされる。該第一導電樹脂体２４の裏面は、外部接続用
の第一裏面端子２８とされる。The upper surface of the first conductive resin body 24 has a first land portion (mounting land portion) 27 on which the light emitting element 22 is mounted.
It is said. The back surface of the first conductive resin body 24 serves as a first back terminal 28 for external connection.
【００２４】前記第二導電樹脂体２５の上面は、発光素
子２２にＡｕ等のボンディングワイヤ２９を介して結線
される第二ランド部（結線用ランド部）３１とされる。
該第二導電樹脂体２５の裏面は、外部接続用の第二裏面
端子３２とされる。The upper surface of the second conductive resin body 25 forms a second land portion (connection land portion) 31 connected to the light emitting element 22 via a bonding wire 29 of Au or the like.
The back surface of the second conductive resin body 25 serves as a second back terminal 32 for external connection.
【００２５】そして、前記各ランド部２７，３１および
各裏面端子２８，３２には、金属膜としてのＮｉ／Ａｕ
メッキ３３が施される。該Ｎｉ／Ａｕメッキ３３は、他
の実装基板への実装時の半田付け用パッドとして使用さ
れる。The lands 27 and 31 and the back terminals 28 and 32 are provided with Ni / Au as a metal film.
Plating 33 is applied. The Ni / Au plating 33 is used as a soldering pad when mounting on another mounting substrate.
【００２６】前記絶縁樹脂体２６は、例えば、液晶ポリ
マー、ポリエーテルサルフォン等のように、良好な加工
性、半田耐熱性を有する機能性高分子材料（エンジニア
リングプラスチック）が使用される。The insulating resin body 26 is made of a functional polymer material (engineering plastic) having good workability and soldering heat resistance, such as liquid crystal polymer and polyether sulfone.
【００２７】樹脂基板２１は、多数個取り形状の基板上
に一括形成し、後述のような発光素子２２の搭載、封止
後、スクライブ手法やダイシング手法を用いて個々の単
位に分割される。The resin substrate 21 is collectively formed on a multi-cavity substrate, and after mounting and sealing the light emitting element 22 described later, the resin substrate 21 is divided into individual units by using a scribe method or a dicing method.
【００２８】前記発光素子２２は、前記第一ランド部２
７にＡｇペーストにより固着され、かつボンディングワ
イヤ２９を介して前記第二ランド部３１に結線される。The light emitting element 22 includes the first land 2
7, and is connected to the second land portion 31 via a bonding wire 29.
【００２９】前記透光性樹脂２３としては、例えば透明
エポキシ樹脂が使用される。As the translucent resin 23, for example, a transparent epoxy resin is used.
【００３０】上記構成の発光装置は、次のように製造さ
れる。The light emitting device having the above structure is manufactured as follows.
【００３１】始めに、樹脂基板２１を、多数個取り形状
の基板上に一括形成する。First, a resin substrate 21 is collectively formed on a multi-cavity substrate.
【００３２】この際、まず、高導電性樹脂を用いて第一
導電樹脂体２４および第二導電樹脂体２５、すなわち電
気回路となる部分の成形を行う（一次成形）。At this time, first, the first conductive resin body 24 and the second conductive resin body 25, that is, a portion to be an electric circuit are formed using a high conductive resin (primary forming).
【００３３】次に、この部分をインサート側として絶縁
樹脂体２６の成形を行い（二次成形）、樹脂基板２１を
一体形成する。この際、各導電樹脂体２４，２５の上面
のランド部２７，３１および裏面の裏面端子２８，３２
が、それぞれの面において露出するようにする。Next, the insulating resin body 26 is molded using this portion as the insert side (secondary molding), and the resin substrate 21 is integrally formed. At this time, the land portions 27, 31 on the upper surface of the conductive resin bodies 24, 25 and the back terminals 28, 32 on the back surface.
Are exposed on each side.
【００３４】その後、各ランド部２７，３１および各裏
面端子２８，３２に、Ｎｉ／Ａｕメッキ３３を施す。Thereafter, Ni / Au plating 33 is applied to each of the lands 27 and 31 and each of the back terminals 28 and 32.
【００３５】そして、発光素子２２を第一ランド部２７
にＡｇペーストで固着し、ボンディングワイヤ２９を介
して第二ランド部３１に結線する。The light emitting element 22 is connected to the first land 27
Is fixed to the second land portion 31 via a bonding wire 29.
【００３６】しかる後、発光素子２２およびボンディン
グワイヤ２９の周囲を透光性樹脂２３にて樹脂封止す
る。Thereafter, the periphery of the light emitting element 22 and the bonding wire 29 is sealed with a light transmitting resin 23.
【００３７】その後、樹脂基板２１を、スクライブ手法
やダイシング手法を用いて個々の単位に分割し、発光装
置は完成する。Thereafter, the resin substrate 21 is divided into individual units by using a scribe method or a dicing method, and the light emitting device is completed.
【００３８】以上の工程にて作成した発光装置は、発光
素子２２と裏面端子２８，３２との電気的接続を、各導
電樹脂体２４を介して行うことができるようになる。そ
うすると、従来のように発光素子２２を接続するための
各ランド部（メッキランド）と、裏面端子（電極用メッ
キ端子）との電気的接続を確保するために、樹脂基板
（反射ケース）のスルーホール等を通って立体配線を施
す必要が無くなる。したがって、製造工程が簡素化、簡
略化される。In the light emitting device manufactured by the above steps, the light emitting element 22 and the back terminals 28 and 32 can be electrically connected through the respective conductive resin bodies 24. Then, in order to secure electrical connection between each land portion (plated land) for connecting the light emitting element 22 and the back surface terminal (plated terminal for electrode) as in the related art, the through-hole of the resin substrate (reflection case) is formed. There is no need to provide a three-dimensional wiring through a hole or the like. Therefore, the manufacturing process is simplified and simplified.
【００３９】また、スルーホール不要のため、成形が容
易で金型形状も簡単にできる。したがって、金型コスト
が安くなる。Further, since no through hole is required, molding is easy and the shape of the mold can be simplified. Therefore, the mold cost is reduced.
【００４０】さらに、回路配線の引き回しが不要なの
で、全体サイズがコンパクトになる。Further, since the wiring of the circuit wiring is unnecessary, the overall size is reduced.
【００４１】（第二実施例）図２は本発明の第二実施例
の発光装置を示す図であり、（Ａ）は上面図、（Ｂ）は
断面図、（Ｃ）は裏面図である。図２において、２１は
パッケージとしての樹脂基板であり、その上面に凹部４
１が形成されている。(Second Embodiment) FIGS. 2A and 2B are diagrams showing a light emitting device according to a second embodiment of the present invention, wherein FIG. 2A is a top view, FIG. 2B is a sectional view, and FIG. . In FIG. 2, reference numeral 21 denotes a resin substrate serving as a package,
1 is formed.
【００４２】前記樹脂基板２１は、凹部４１の底壁を構
成する底面部４２と、凹部４１の側壁を構成する周辺部
４３とからなる。The resin substrate 21 is composed of a bottom portion 42 forming the bottom wall of the recess 41 and a peripheral portion 43 forming the side wall of the recess 41.
【００４３】前記底面部４２は、第一実施例と同様に、
第一導電樹脂体２４と、第二導電樹脂体２５と、該両導
電樹脂体２４，２５の間に介在される絶縁樹脂体２６と
が、金型成形時に一体形成（二色成形）されてなる。The bottom portion 42 is formed in the same manner as in the first embodiment.
The first conductive resin body 24, the second conductive resin body 25, and the insulating resin body 26 interposed between the conductive resin bodies 24, 25 are integrally formed (two-color molding) at the time of die molding. Become.
【００４４】前記周辺部４３は絶縁性樹脂から形成され
ている。該周辺部４３は、前記底面部４２に二色成形法
にて金型成形時に一体形成される。The peripheral portion 43 is formed of an insulating resin. The peripheral portion 43 is formed integrally with the bottom surface portion 42 by a two-color molding method at the time of die molding.
【００４５】前記各導電樹脂体２４，２５の上面の各ラ
ンド部２７，３１および裏面の各裏面端子２８，３２に
は、Ｎｉ／Ａｕメッキ３３が施されている。The Ni / Au plating 33 is applied to the lands 27, 31 on the upper surface of the conductive resin bodies 24, 25 and the back terminals 28, 32 on the back.
【００４６】そして、発光素子２２は、第一ランド部２
７にＡｇペースト４４により固着され、発光素子２２の
上部電極と第二ランド部３１との間は、Ａｕ等のボンデ
ィングワイヤ２９により結線される。The light emitting element 22 is provided in the first land 2
7 is fixed with an Ag paste 44, and the upper electrode of the light emitting element 22 and the second land 31 are connected by a bonding wire 29 such as Au.
【００４７】また、前記凹部４１の内部全体は、発光素
子２２の保護と外部量子効率の向上を目的として、透明
エポキシ樹脂等の透光性樹脂２３により封止される。The entire interior of the concave portion 41 is sealed with a light-transmitting resin 23 such as a transparent epoxy resin for the purpose of protecting the light emitting element 22 and improving external quantum efficiency.
【００４８】本実施例によっても、第一実施例と同様の
効果を得ることができる。According to this embodiment, the same effect as that of the first embodiment can be obtained.
【００４９】（第三実施例）図３において、２１はパッ
ケージとしての樹脂基板であり、その上面に凹部４１が
形成されている。(Third Embodiment) In FIG. 3, reference numeral 21 denotes a resin substrate as a package, and a concave portion 41 is formed on the upper surface thereof.
【００５０】前記樹脂基板２１は、凹部４１の底壁を構
成する底面部４２と、凹部４１の側壁を構成する周辺部
４３とからなる。The resin substrate 21 includes a bottom surface portion 42 that forms the bottom wall of the concave portion 41 and a peripheral portion 43 that forms the side wall of the concave portion 41.
【００５１】前記底面部４２は、第一実施例と同様に、
第一導電樹脂体２４と、第二導電樹脂体２５と、該両導
電樹脂体２４，２５の間に介在される絶縁樹脂体２６と
が、金型成形時に一体形成（二色成形）されてなる。The bottom portion 42 is provided in the same manner as in the first embodiment.
The first conductive resin body 24, the second conductive resin body 25, and the insulating resin body 26 interposed between the conductive resin bodies 24, 25 are integrally formed (two-color molding) at the time of die molding. Become.
【００５２】前記周辺部４３は絶縁性樹脂から形成され
ている。該周辺部４３は、前記底面部４２に二色成形法
にて金型成形時に一体形成される。The peripheral portion 43 is formed of an insulating resin. The peripheral portion 43 is formed integrally with the bottom surface portion 42 by a two-color molding method at the time of die molding.
【００５３】そして、第二導電樹脂体２５には、金型成
形時に金属製リードピン４５（金属部材）が埋め込まれ
ており、ワイヤボンド時のボンディングパッドの役割を
果たす。A metal lead pin 45 (metal member) is embedded in the second conductive resin body 25 at the time of molding, and plays a role of a bonding pad at the time of wire bonding.
【００５４】また、樹脂基板２１の裏面の各裏面端子２
８，３２には、外部接続用のＮｉ／Ａｕメッキ３３が施
されている。Each back terminal 2 on the back of the resin substrate 21
8, 32 are provided with Ni / Au plating 33 for external connection.
【００５５】そして、発光素子２２は、第一ランド部２
７上にＡｇペーストにより固着され、発光素子２２の上
部電極と前記金属製リードピン４５との間は、Ａｕ等の
ボンディングワイヤ２９により結線される。Then, the light emitting element 22 includes the first land 2
7 is fixed with an Ag paste, and the upper electrode of the light emitting element 22 and the metal lead pin 45 are connected by a bonding wire 29 such as Au.
【００５６】また、前記凹部４１の内部全体は、発光素
子２２の保護と外部量子効率の向上を目的として、透明
エポキシ樹脂等の透光性樹脂２３により封止される。The entire interior of the concave portion 41 is sealed with a light transmitting resin 23 such as a transparent epoxy resin for the purpose of protecting the light emitting element 22 and improving the external quantum efficiency.
【００５７】このように発光装置を形成すると、金属製
リードピン４５にて電気的導通を果たす。したがって、
本実施例では、樹脂基板２１の裏面の各裏面端子２８，
３２に外部接続用のＮｉ／Ａｕメッキ３３を施していた
が、凹部４１内に金属膜を一切形成せずにＡｕワイヤー
を直接ケースに接続することも可能である。When the light emitting device is formed in this manner, electrical conduction is achieved by the metal lead pins 45. Therefore,
In the present embodiment, each of the back terminals 28 on the back of the resin substrate 21,
Although Ni / Au plating 33 for external connection is applied to 32, it is also possible to connect an Au wire directly to the case without forming any metal film in the concave portion 41.
【００５８】（第四実施例）図４は第四実施例の発光装
置の断面図であり、図５は第四実施例の発光素子の構造
図である。図４中、２１はパッケージとしての樹脂基板
であり、該樹脂基板２１内に発光素子２２が搭載され
る。(Fourth Embodiment) FIG. 4 is a sectional view of a light emitting device of a fourth embodiment, and FIG. 5 is a structural view of a light emitting device of the fourth embodiment. In FIG. 4, reference numeral 21 denotes a resin substrate as a package, on which a light emitting element 22 is mounted.
【００５９】前記樹脂基板２１は、凹部４１の底壁を構
成する底面部４２と、凹部４１の側壁を構成する絶縁性
の周辺部４３とからなる。The resin substrate 21 is composed of a bottom portion 42 forming the bottom wall of the concave portion 41 and an insulating peripheral portion 43 forming the side wall of the concave portion 41.
【００６０】前記底面部４２は、上面が第一ランド部２
７とされかつ裏面が第一裏面端子２８とされた高導電性
の第一導電樹脂体２４と、上面が第二ランド部３１とさ
れかつ裏面が第二裏面端子３２とされた高導電性の第二
導電樹脂体２５と、該両導電樹脂体２４，２５の間に介
在される絶縁樹脂体２６とからなる。これらは、第一実
施例ないし第三実施例と同様に、金型成形時に一体形成
される。The bottom surface 42 has an upper surface which is the first land 2
7 and a highly conductive first conductive resin body 24 having a back surface as a first back surface terminal 28 and a highly conductive first conductive resin body 24 having an upper surface as a second land portion 31 and a back surface as a second back surface terminal 32. It comprises a second conductive resin body 25 and an insulating resin body 26 interposed between the two conductive resin bodies 24, 25. These are integrally formed at the time of die molding, similarly to the first to third embodiments.
【００６１】そして、本実施例の発光素子２２は、図５
のようなフェイスダウンタイプのものが用いられる。す
なわち、該発光素子２２は、第一電極としてのＰ電極４
６と、第二電極としてのＮ電極４７の両方とも、発光素
子２２の裏面に並設されており、かつ、光の放射が発光
素子２２の上面からなされるよう構成されている。The light emitting device 22 of this embodiment is different from the light emitting device of FIG.
A face-down type such as described above is used. That is, the light emitting element 22 has a P electrode 4 as a first electrode.
6 and the N-electrode 47 as the second electrode are arranged side by side on the back surface of the light emitting element 22, and are configured so that light is emitted from the upper surface of the light emitting element 22.
【００６２】ここで、図５中、４８はＰＮ両電極４６，
４７間の絶縁耐圧性を強化するための空隙、４９はＳｉ
Ｏ2膜、５１はｐ+−ＧａＡｓ層、５２はｎ−ＧａＡｓ
層、５３はｎ−ＧａＡｌＡｓ層、５４はｐ−ＧａＡｌＡ
ｓ活性層、５５はｐ−ＧａＡｌＡｓ層、５６はｐ−Ｇａ
ＡｌＡｓ層である。Here, in FIG. 5, reference numeral 48 denotes a PN electrode 46,
A void for enhancing the dielectric strength between 47, 49 is Si
O 2 film, 51 is a p + -GaAs layer, 52 is n-GaAs
Layer, 53 is an n-GaAlAs layer, 54 is p-GaAlA
s active layer, 55 is a p-GaAlAs layer, 56 is p-Ga
This is an AlAs layer.
【００６３】そして、該発光素子２２のＰＮ両電極４
６，４７は、前記樹脂基板２１の両ランド部２７，３１
に跨がるよう固定されている。この固定方法としては、
例えば、発光素子２２の各電極４６，４７部分にＡｕ或
いは半田等で導電バンプ５７を予め形成しておき、熱或
いは超音波圧着等で各ランド部２７，３１に接続、搭載
される。The PN electrodes 4 of the light emitting element 22
6, 47 are both land portions 27, 31 of the resin substrate 21;
It is fixed so as to straddle. As this fixing method,
For example, the conductive bumps 57 are formed in advance on the electrodes 46 and 47 of the light emitting element 22 with Au or solder, and are connected to and mounted on the lands 27 and 31 by heat or ultrasonic pressure bonding.
【００６４】なお、本実施例でも、他の実施例と同じ
く、凹部４１の内部全体が、発光素子２２の保護と外部
量子効率の向上を目的として、透明エポキシ樹脂２３に
より封止される。In this embodiment, as in the other embodiments, the entire interior of the recess 41 is sealed with the transparent epoxy resin 23 for the purpose of protecting the light emitting element 22 and improving the external quantum efficiency.
【００６５】このように、発光素子２２としてフェイス
ダウンタイプの上面発光型のものを用いると、光の出力
面である上面に電極が存在しないため、従来の上面電極
方式に比べて、光利用効率が向上する。As described above, when a face-down type top emission type light emitting element is used as the light emitting element 22, no electrode exists on the upper surface which is a light output surface. Is improved.
【００６６】なお、本発明は、上記実施例に限定される
ものではなく、本発明の範囲内で上記実施例に多くの修
正および変更を加え得ることは勿論である。Note that the present invention is not limited to the above-described embodiment, and it goes without saying that many modifications and changes can be made to the above-described embodiment within the scope of the present invention.
【００６７】例えば、第三実施例において、金属製リー
ドピン４５は、高導電性樹脂からなる第二樹脂体２５に
埋め込まれていたが、第二樹脂体２５の材質として、必
ずしも高導電性を要求する必要がないため、これに代え
て、絶縁樹脂体２６と同様の絶縁性樹脂を用いても構わ
ない。この場合、絶縁樹脂体２６と第二樹脂体２５とは
二色成形する必要がないため、製造段階では単に同時に
成形すればよい。For example, in the third embodiment, the metal lead pins 45 are embedded in the second resin body 25 made of a highly conductive resin, but the material of the second resin body 25 does not necessarily require high conductivity. Therefore, an insulating resin similar to the insulating resin body 26 may be used instead. In this case, since the insulating resin body 26 and the second resin body 25 do not need to be formed in two colors, they may be formed simultaneously at the manufacturing stage.
【００６８】また、上記各実施例では、各ランド部２
７，３１や裏面端子２８，３２に施す金属膜３３の材質
として、Ｎｉ／Ａｕを用いていたが、例えば、Ａｌ，Ｃ
ｕ，Ａｇ等を用いてもよい。In each of the above embodiments, each land 2
Although Ni / Au is used as the material of the metal film 33 applied to the backside terminals 28 and 32 and the backside terminals 28 and 32, for example, Al, C
u, Ag or the like may be used.
【００６９】さらに、例えば第一実施例では、第一導電
樹脂体２４および第二導電樹脂体２５の形成後、絶縁樹
脂体２６を二色成形法にて一体形成していたが、絶縁樹
脂体２６の形成後、第一導電樹脂体２４および第二導電
樹脂体２５を二色成形法にて一体形成してもよい。Furthermore, for example, in the first embodiment, after forming the first conductive resin body 24 and the second conductive resin body 25, the insulating resin body 26 is integrally formed by the two-color molding method. After the formation of 26, the first conductive resin body 24 and the second conductive resin body 25 may be integrally formed by a two-color molding method.
【００７０】[0070]
【発明の効果】以上の説明から明らかな通り、本発明に
よると、導電樹脂体と絶縁樹脂体とからなるパッケージ
に発光素子を搭載し、上面の発光素子と裏面の裏面端子
との電気的導通を導電樹脂体にて行うので、従来例のよ
うなスルーホール等の立体配線を施す必要がなくなる。
したがって、マスキング工程等の作業工程を省略し、製
造作業を簡略化できる。As it is clear from the description above, according to the present invention, according <br/> to the onset bright, conductive resin material and a light emitting element mounted in a package made of an insulating resin material, the light-emitting element having a top and a back surface of the back Since electrical conduction with the terminals is performed by the conductive resin body, it is not necessary to provide three-dimensional wiring such as through holes as in the conventional example.
Therefore, work steps such as a masking step can be omitted, and the manufacturing work can be simplified.
【００７１】また、スルーホール不要のため、成形が容
易で金型形状も簡単にできる。したがって、金型コスト
が安くなる。Further, since through holes are not required, molding is easy and the shape of the mold can be simplified. Therefore, the mold cost is reduced.
【００７２】さらに、回路配線の引き回しが不要なの
で、全体サイズがコンパクトになる。Further, since the wiring of the circuit wiring is not required, the whole size becomes compact.
【００７３】金属部材にて、上面の発光素子と裏面の裏
面端子との電気的導通を導電樹脂体にて行うので、凹部
内部の電極も不要となり、より工程の簡略化が可能であ
る。[0073] At Metals member, since the electrical connection between the light emitting element of the top surface and the back surface of the back terminal of a conductive resin material, the recess inside the electrode becomes unnecessary, it is possible to further simplify the process.
【００７４】発光素子としてフェイスダウンタイプの上
面発光型のものを用いているので、光の出力面である上
面の電極を省略でき、従来の上面電極方式に比べて、光
利用効率が向上するといった優れた効果がある。[0074] because of the use of those top emission type of face-down type as a light - emitting element, can be omitted electrodes of the top surface is the output surface of the light, in comparison with the conventional top electrode system, the light utilization efficiency is improved There is such an excellent effect.
【図１】本発明の第一実施例の発光装置を示す断面図FIG. 1 is a sectional view showing a light emitting device according to a first embodiment of the present invention.
【図２】本発明の第二実施例の発光装置を示す図であっ
て、（Ａ）は平面図、（Ｂ）は断面図、（Ｃ）は裏面図FIGS. 2A and 2B are diagrams showing a light emitting device according to a second embodiment of the present invention, wherein FIG. 2A is a plan view, FIG. 2B is a cross-sectional view, and FIG.
【図３】本発明の第三実施例の発光装置を示す断面図FIG. 3 is a sectional view showing a light emitting device according to a third embodiment of the present invention.
【図４】本発明の第四実施例の発光装置を示す断面図FIG. 4 is a sectional view showing a light emitting device according to a fourth embodiment of the present invention.
【図５】本発明の第四実施例の発光装置に用いる発光素
子の構造図FIG. 5 is a structural view of a light emitting element used in a light emitting device according to a fourth embodiment of the present invention.
【図６】従来の発光装置を示す図であって、（Ａ）は平
面図、（Ｂ）は側面図、（Ｃ）は断面図6A and 6B are views showing a conventional light emitting device, wherein FIG. 6A is a plan view, FIG. 6B is a side view, and FIG.
２１ パッケージ ２２ 発光素子 ２３ 透光性樹脂 ２４ 第一導電樹脂体 ２５ 第二導電樹脂体 ２６ 絶縁樹脂体 ２７ 第一ランド部 ２８ 第一裏面端子 ２９ ボンディングワイヤ ３１ 第二ランド部 ３２ 第二裏面端子 ３３ 金属膜 ４１ 凹部 ４５ 金属部材 ４６ 第一電極 ４７ 第二電極 ５７ 導電バンプ 21 Package 22 Light Emitting Element 23 Translucent Resin 24 First Conductive Resin Body 25 Second Conductive Resin Body 26 Insulating Resin Body 27 First Land 28 First Back Terminal 29 Bonding Wire 31 Second Land 32 Second Back Terminal 33 Metal film 41 Depression 45 Metal member 46 First electrode 47 Second electrode 57 Conductive bump
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 H01L 21/56 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int. Cl. 7 , DB name) H01L 33/00 H01L 21/56
Claims (6)
る第一ランド部と、発光素子にボンディングワイヤを介
して結線される第二ランド部とが形成され、 パッケージの裏面に、外部接続用の裏面端子が形成さ
れ、 前記第一ランド部に発光素子が搭載され、 発光素子と第二ランド部とがボンディングワイヤにて結
線され、 発光素子およびボンディングワイヤが透光性樹脂にて樹
脂封止された発光装置において、 前記パッケージは、 上面が第一ランド部とされかつ裏面が第一裏面端子とさ
れた高導電性の第一導電樹脂体と、 上面が第二ランド部とされかつ裏面が第二裏面端子とさ
れた高導電性の第二導電樹脂体と、 該両導電樹脂体の間に介在される絶縁樹脂体とからなる
ことを特徴とする発光装置。A first land portion for mounting a light emitting element and a second land portion connected to the light emitting element via a bonding wire are formed on an upper surface of the package. A back surface terminal is formed, a light emitting element is mounted on the first land part, the light emitting element and the second land part are connected with a bonding wire, and the light emitting element and the bonding wire are resin-sealed with a translucent resin. In the light emitting device, the package has a first conductive resin body having an upper surface as a first land portion and a lower surface as a first back surface terminal; a package having an upper surface as a second land portion and a lower surface as a first land portion. emitting device comprising: the high conductivity of the second conductive resin material which is a two-back terminal, wherein <br/> being interposed consisting of an insulating resin material between the both conductive resin material.
ケージの上面に凹部が形成され、第一ランド部および第
二ランド部は、前記凹部の底面部に配置され、発光素子
の搭載・結線後、凹部の内部が透光性樹脂にて樹脂封止
されてなることを特徴とする発光装置。2. A light emitting device according to claim 1, wherein a recess is formed on an upper surface of the package, the first land portion and the second land portion is disposed on the bottom surface of the recess, mounting and wire connections of the light emission element The light emitting device is characterized in that the inside of the concave portion is resin-sealed with a translucent resin.
端子に、接続用の金属膜が形成されたことを特徴とする
請求項１または２記載の発光装置。3. A metal film for connection is formed on the first land portion, the second land portion, and the back terminal.
The light emitting device according to claim 1 .
る第一ランド部と、発光素子にボンディングワイヤを介
して結線される第二ランド部とが形成され、 パッケージの裏面に、外部接続用の裏面端子が形成さ
れ、 前記第一ランド部に発光素子が搭載され、 発光素子と第二ランド部とがボンディングワイヤにて結
線され、 発光素子およびボンディングワイヤが透光性樹脂にて樹
脂封止された発光装置において、 前記パッケージは、 上面が第一ランド部とされかつ裏面が第一裏面端子とさ
れた高導電性の第一樹脂体と、 上面に第二ランド部とされかつ裏面に第二裏面端子が形
成される第二樹脂体と、 該両樹脂体の間に介在される絶縁樹脂体とからなり、 前 記第二樹脂体に、ボンディングワイヤと接続するため
の金属部材が露出して埋め込まれたことを特徴とする発
光装置。4. A first land portion on which a light emitting element is mounted and a second land portion connected to the light emitting element via a bonding wire are formed on an upper surface of the package. A back surface terminal is formed, a light emitting element is mounted on the first land part, the light emitting element and the second land part are connected with a bonding wire, and the light emitting element and the bonding wire are resin-sealed with a translucent resin. In the light emitting device, the package has a first conductive body having an upper surface as a first land portion and a lower surface as a first back surface terminal; a second land portion on the upper surface and a second land portion on the lower surface. a second resin body rear surface terminals are formed, are interposed between the both resin body made of an insulating resin material, prior SL second resin member, to expose the metal member for connecting the bonding wire Embedded The light emitting device characterized in that the.
極に接続される第一ランド部と、発光素子の第二電極に
接続される第二ランド部とが形成され、 パッケージの裏面に、外部接続用の裏面端子が形成さ
れ、 前記第一ランド部および第二ランド部に発光素子が搭載
され、発光素子が 透光性樹脂にて樹脂封止された発光装置にお
いて、 前記パッケージは、 上面が第一ランド部とされかつ裏面が第一裏面端子とさ
れた高導電性の第一導電樹脂体と、 上面が第二ランド部とされかつ裏面が第二裏面端子とさ
れた高導電性の第二導電樹脂体と、 該両導電樹脂体の間に介在される絶縁樹脂体とからな
り、光の放出が発光素子の上面からなされるように 第一電極
および第二電極の両方とも発光素子の裏面に並設され、 各電極と各ランド部とは、電極および各ランド部のいず
れか一方に予め形成された導電バンプを介して接続され
たことを特徴とする発光装置。5. A first land portion connected to a first electrode of the light emitting device and a second land portion connected to a second electrode of the light emitting device are formed on an upper surface of the package. a back terminal for external connection is formed, and the first land portion and the light emitting element in the second land portion is mounted, the light emitting device emitting element is sealed with a resin by translucent resin, the package is a top Is a first land portion and a back surface is a first back terminal. A highly conductive first conductive resin body, and a top surface is a second land portion and a back surface is a second back terminal. A second conductive resin body, and an insulating resin body interposed between the two conductive resin bodies, wherein both the first electrode and the second electrode are light emitting elements so that light is emitted from the upper surface of the light emitting element. Each electrode and each land are connected And light-emitting apparatus characterized by being connected through either preformed conductive bump on one of the land portions.
一裏面端子とされた高導電性の第一導電樹脂体と、上面
が第二ランド部とされかつ裏面が第二裏面端子とされた
高導電性の第二導電樹脂体と、これらの間に介在される
絶縁樹脂体とを、一体的に金型成形してパッケージを形
成し、パッケージの上面に、発光素子をその第一電極が
第一ランド部に接続し、第二電極が第二ランド部に接続
するよう搭載し、発光素子の周囲を透光性樹脂にて樹脂
封止することを特徴とする発光装置の製造方法。6. A highly conductive first conductive resin body having an upper surface as a first land portion and a rear surface as a first back terminal, and a second land portion as an upper surface and a second back terminal as a rear surface. The highly conductive second conductive resin body and the insulating resin body interposed therebetween are integrally molded to form a package, and the light-emitting element is placed on the top surface of the package. A method for manufacturing a light emitting device, comprising mounting an electrode so as to connect to a first land portion and a second electrode so as to connect to a second land portion, and sealing the periphery of the light emitting element with a transparent resin. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21129492A JP3247436B2 (en) | 1992-08-07 | 1992-08-07 | Light emitting device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21129492A JP3247436B2 (en) | 1992-08-07 | 1992-08-07 | Light emitting device and method of manufacturing the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001175269A Division JP3753629B2 (en) | 2001-06-11 | 2001-06-11 | Light emitting device |
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| Publication Number | Publication Date |
|---|---|
| JPH0661529A JPH0661529A (en) | 1994-03-04 |
| JP3247436B2 true JP3247436B2 (en) | 2002-01-15 |
Family
ID=16603556
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| DE19549726B4 (en) * | 1994-12-06 | 2010-04-22 | Sharp K.K. | Light emitting diode module for e.g. display panel, LCD back light - has LED chip enclosed in transparent resin package with electrodes being connected to respective P=type and N=type PN junction sides while passing through sealed respective insulating substrate hole |
| JP4065051B2 (en) * | 1998-04-17 | 2008-03-19 | スタンレー電気株式会社 | Surface mount LED and manufacturing method thereof |
| JP2002299699A (en) | 2001-03-30 | 2002-10-11 | Sumitomo Electric Ind Ltd | Light-emitting device and method of manufacturing the same |
| JP4686248B2 (en) * | 2005-04-28 | 2011-05-25 | スタンレー電気株式会社 | Optical semiconductor device and optical semiconductor device manufacturing method |
| DE102015107591B4 (en) * | 2015-05-13 | 2021-09-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component |
-
1992
- 1992-08-07 JP JP21129492A patent/JP3247436B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0661529A (en) | 1994-03-04 |
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