JPH0127773B2 - - Google Patents
Info
- Publication number
- JPH0127773B2 JPH0127773B2 JP3212082A JP3212082A JPH0127773B2 JP H0127773 B2 JPH0127773 B2 JP H0127773B2 JP 3212082 A JP3212082 A JP 3212082A JP 3212082 A JP3212082 A JP 3212082A JP H0127773 B2 JPH0127773 B2 JP H0127773B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- metal compound
- gas
- powder
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000843 powder Substances 0.000 claims description 93
- 150000002736 metal compounds Chemical class 0.000 claims description 73
- 239000007789 gas Substances 0.000 claims description 66
- 229910052751 metal Inorganic materials 0.000 claims description 57
- 239000002184 metal Substances 0.000 claims description 56
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 51
- 238000006243 chemical reaction Methods 0.000 claims description 49
- 238000004519 manufacturing process Methods 0.000 claims description 39
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 238000001816 cooling Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 23
- 239000008246 gaseous mixture Substances 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 36
- 229910001873 dinitrogen Inorganic materials 0.000 description 33
- 238000011084 recovery Methods 0.000 description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 238000010791 quenching Methods 0.000 description 5
- 230000000171 quenching effect Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000010574 gas phase reaction Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000035484 reaction time Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- -1 silicon halide Chemical class 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Oxygen, Ozone, And Oxides In General (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3212082A JPS58150427A (ja) | 1982-03-01 | 1982-03-01 | 金属化合物の微粉末の製造方法 |
EP83101961A EP0087798B1 (en) | 1982-03-01 | 1983-02-28 | A method and apparatus for making a fine powder compound of a metal and another element |
DE8383101961T DE3371295D1 (en) | 1982-03-01 | 1983-02-28 | A method and apparatus for making a fine powder compound of a metal and another element |
US06/471,003 US4484943A (en) | 1982-03-01 | 1983-03-01 | Method and apparatus for making a fine powder compound of a metal and another element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3212082A JPS58150427A (ja) | 1982-03-01 | 1982-03-01 | 金属化合物の微粉末の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58150427A JPS58150427A (ja) | 1983-09-07 |
JPH0127773B2 true JPH0127773B2 (enrdf_load_stackoverflow) | 1989-05-30 |
Family
ID=12350026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3212082A Granted JPS58150427A (ja) | 1982-03-01 | 1982-03-01 | 金属化合物の微粉末の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58150427A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NO20160930A1 (en) * | 2016-05-31 | 2017-12-01 | Inst Energiteknik | Method, powder, film, electrode & battery |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6110012A (ja) * | 1984-06-22 | 1986-01-17 | Japan Metals & Chem Co Ltd | 超微粉金属窒化物の製造方法並びに製造装置 |
JPS61141606A (ja) * | 1984-12-13 | 1986-06-28 | Japan Metals & Chem Co Ltd | 超微粉金属窒化物の製造方法ならびに製造装置 |
JP4639363B2 (ja) * | 2003-06-09 | 2011-02-23 | 独立行政法人産業技術総合研究所 | 非酸化物系粒子の製造方法 |
JP2005263606A (ja) * | 2004-03-22 | 2005-09-29 | Japan Pionics Co Ltd | 酸化物粉末の製造装置及び製造方法 |
ES2525373T3 (es) * | 2008-08-15 | 2014-12-23 | Basf Se | Procedimiento para la preparación de partículas sólidas orgánicas a nanoescala |
-
1982
- 1982-03-01 JP JP3212082A patent/JPS58150427A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NO20160930A1 (en) * | 2016-05-31 | 2017-12-01 | Inst Energiteknik | Method, powder, film, electrode & battery |
NO344185B1 (en) * | 2016-05-31 | 2019-09-30 | Inst Energiteknik | Electrode and Battery comprising a powder of Silicon Nitride particles |
Also Published As
Publication number | Publication date |
---|---|
JPS58150427A (ja) | 1983-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0087798B1 (en) | A method and apparatus for making a fine powder compound of a metal and another element | |
US4632849A (en) | Method for making a fine powder of a metal compound having ceramic coatings thereon | |
JPH0455736B2 (enrdf_load_stackoverflow) | ||
EP0371771A2 (en) | Process for preparing aluminium nitride and aluminium nitride so produced | |
JPH0127773B2 (enrdf_load_stackoverflow) | ||
US5693305A (en) | Method for synthesizing aluminum nitride whiskers | |
JPH09118598A (ja) | 窒化アルミニウムウイスカーの製造法 | |
JPH0352402B2 (enrdf_load_stackoverflow) | ||
JPS6330963B2 (enrdf_load_stackoverflow) | ||
JPH0255481B2 (enrdf_load_stackoverflow) | ||
JPS60150828A (ja) | 金属化合物の微粉末の製造方法 | |
JPS61174107A (ja) | 窒化アルミニウム超微粒子の製造方法 | |
Gomez-Aleixandre et al. | Crystallization and sintering characteristics of chemically vapor deposited silicon nitride powders | |
JP2009078949A (ja) | SiO粉体の製造方法及び製造装置 | |
JPS60251928A (ja) | 金属化合物超微粒子の製造方法 | |
JPH01115810A (ja) | 高純度立方晶炭化タングステン超微粉末の製造法 | |
JPS5891018A (ja) | 窒化物微粉末の製造方法 | |
JPS5930645B2 (ja) | 高純度α型窒化珪素の製造法 | |
JPS644999B2 (enrdf_load_stackoverflow) | ||
JPS645000B2 (enrdf_load_stackoverflow) | ||
JPS602244B2 (ja) | 菱面体晶窒化ほう素の製造法 | |
Chang et al. | Silicon nitride synthesis in an atmospheric pressure convection—Stabilized arc | |
JPS60195008A (ja) | 窒化珪素粉末の製造方法 | |
JPS6111885B2 (enrdf_load_stackoverflow) | ||
JP2784060B2 (ja) | 高純度窒化ケイ素粉末の製法 |