JPH0126545B2 - - Google Patents

Info

Publication number
JPH0126545B2
JPH0126545B2 JP57125541A JP12554182A JPH0126545B2 JP H0126545 B2 JPH0126545 B2 JP H0126545B2 JP 57125541 A JP57125541 A JP 57125541A JP 12554182 A JP12554182 A JP 12554182A JP H0126545 B2 JPH0126545 B2 JP H0126545B2
Authority
JP
Japan
Prior art keywords
emitter
collector
base
region
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57125541A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5916367A (ja
Inventor
Tadashi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIDO KEISOKU GIJUTSU KENKYUKUMIAI
Original Assignee
JIDO KEISOKU GIJUTSU KENKYUKUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIDO KEISOKU GIJUTSU KENKYUKUMIAI filed Critical JIDO KEISOKU GIJUTSU KENKYUKUMIAI
Priority to JP57125541A priority Critical patent/JPS5916367A/ja
Publication of JPS5916367A publication Critical patent/JPS5916367A/ja
Publication of JPH0126545B2 publication Critical patent/JPH0126545B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57125541A 1982-07-19 1982-07-19 マルチトランジスタ Granted JPS5916367A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57125541A JPS5916367A (ja) 1982-07-19 1982-07-19 マルチトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57125541A JPS5916367A (ja) 1982-07-19 1982-07-19 マルチトランジスタ

Publications (2)

Publication Number Publication Date
JPS5916367A JPS5916367A (ja) 1984-01-27
JPH0126545B2 true JPH0126545B2 (cs) 1989-05-24

Family

ID=14912745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57125541A Granted JPS5916367A (ja) 1982-07-19 1982-07-19 マルチトランジスタ

Country Status (1)

Country Link
JP (1) JPS5916367A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5307377B2 (ja) * 2007-10-05 2013-10-02 新日本無線株式会社 電力増幅器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811756B2 (ja) * 1974-11-29 1983-03-04 三菱電機株式会社 デンカイコウカハンドウタイソシ オヨビ ソノソウチ
JPS5255476A (en) * 1975-10-31 1977-05-06 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS5916367A (ja) 1984-01-27

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