JPH0126194B2 - - Google Patents
Info
- Publication number
- JPH0126194B2 JPH0126194B2 JP56158493A JP15849381A JPH0126194B2 JP H0126194 B2 JPH0126194 B2 JP H0126194B2 JP 56158493 A JP56158493 A JP 56158493A JP 15849381 A JP15849381 A JP 15849381A JP H0126194 B2 JPH0126194 B2 JP H0126194B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- bipolar transistor
- field effect
- emitter
- junction field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 3
- 238000007254 oxidation reaction Methods 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56158493A JPS5858763A (ja) | 1981-10-05 | 1981-10-05 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56158493A JPS5858763A (ja) | 1981-10-05 | 1981-10-05 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5858763A JPS5858763A (ja) | 1983-04-07 |
| JPH0126194B2 true JPH0126194B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-05-22 |
Family
ID=15672942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56158493A Granted JPS5858763A (ja) | 1981-10-05 | 1981-10-05 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5858763A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60115252A (ja) * | 1983-11-28 | 1985-06-21 | Nec Corp | 半導体装置 |
| JPS60117765A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS60257577A (ja) * | 1984-06-04 | 1985-12-19 | Mitsubishi Electric Corp | 接合型電界効果トランジスタ |
-
1981
- 1981-10-05 JP JP56158493A patent/JPS5858763A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5858763A (ja) | 1983-04-07 |
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