JPH0126185B2 - - Google Patents

Info

Publication number
JPH0126185B2
JPH0126185B2 JP56135154A JP13515481A JPH0126185B2 JP H0126185 B2 JPH0126185 B2 JP H0126185B2 JP 56135154 A JP56135154 A JP 56135154A JP 13515481 A JP13515481 A JP 13515481A JP H0126185 B2 JPH0126185 B2 JP H0126185B2
Authority
JP
Japan
Prior art keywords
region
epitaxial layer
forming
film
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56135154A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5835970A (ja
Inventor
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56135154A priority Critical patent/JPS5835970A/ja
Publication of JPS5835970A publication Critical patent/JPS5835970A/ja
Publication of JPH0126185B2 publication Critical patent/JPH0126185B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP56135154A 1981-08-28 1981-08-28 半導体装置の製造方法 Granted JPS5835970A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56135154A JPS5835970A (ja) 1981-08-28 1981-08-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56135154A JPS5835970A (ja) 1981-08-28 1981-08-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5835970A JPS5835970A (ja) 1983-03-02
JPH0126185B2 true JPH0126185B2 (enrdf_load_stackoverflow) 1989-05-22

Family

ID=15145074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56135154A Granted JPS5835970A (ja) 1981-08-28 1981-08-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5835970A (enrdf_load_stackoverflow)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419675A (en) * 1977-07-15 1979-02-14 Hitachi Ltd Production of semiconductor devices
JPS559425A (en) * 1978-07-07 1980-01-23 Oki Electric Ind Co Ltd Manufacturing method for semiconductor device
US4338138A (en) * 1980-03-03 1982-07-06 International Business Machines Corporation Process for fabricating a bipolar transistor
JPS56157042A (en) * 1980-05-06 1981-12-04 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5835970A (ja) 1983-03-02

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